摘要:
A circuit for generating a write signal includes a pre-emphasis signal generator that receives location information of a to-be-programmed memory cell and generates a pre-emphasis signal depending on the location information of the to-be-programmed memory cell, and a write driver that generates a program signal corresponding to data to be programmed in the to-be-programmed memory cell. A write signal is generated by combining the program signal with the pre-emphasis signal supplied from the pre-emphasis signal generator, and the write signal output to the to-be-programmed memory cell.
摘要:
A semiconductor memory device uses a magnetic tunnel junction device (MTJ) and includes a memory cell connected between a first driving line and a second driving line and configured to store data having a data state that is determined based on a direction of a current flowing through the first and the second driving lines, and a current controlling block configured to control a supply current provided to the first and second driving lines in response to temperature information in a writing operation.
摘要:
An interbody fusion implant with deployable bone anchors includes a support member, a monolithic body that accommodates the support member, and a longitudinal hole along a vertical length of the support member. The support member includes a first end and a second end. The second end includes two flanges. The flanges are configured to dig into an endplate of a vertebral body. The flanges of the support member provide a location fixation on an implantation of the interbody fusion implant into the vertebral body. The support member may also include at least one of a clip shaped support member and an I-shaped support member. The I-shaped support member may allow a rigidity and a support in flexion-extension through a living-hinge positioned in a middle of the I-shaped support member. The longitudinal hole sustains loads imported on the interbody fusion implant and allows the interbody fusion implant to flex freely.
摘要:
A semiconductor memory device uses a magnetic tunnel junction device (MTJ) and includes a memory cell connected between a first driving line and a second driving line and configured to store data having a data state that is determined based on a direction of a current flowing through the first and the second driving lines, and a current controlling block configured to control a supply current provided to the first and second driving lines in response to temperature information in a writing operation.
摘要:
A semiconductor memory device includes a plurality of memory cells configured to correspond to each of a plurality of word lines for storing data; a plurality of reference memory cells configured to include first and second magnetic memory devices, whose lower electrodes are commonly connected to each other, to generate a reference current corresponding to each of the memory cells; and a sense amplification unit configured to sense and amplify the reference current and a data current corresponding to a memory cell connected to an activated word line among the word lines.
摘要:
A semiconductor integrated circuit includes a delay line of a delay locked loop. The delay line of the delay locked loop includes a delay variation detecting unit that outputs a detection signal according to a variation in delay time using a reference clock signal, and a plurality of delay units that change a delay time according to the detection signal and delay the output of an input signal by the changed delay time.
摘要:
A delay locked loop (DLL) of a semiconductor device has a relatively small area and low current consumption while having a function of correcting a duty ratio. The semiconductor device includes a split unit configured to receive and split a reference clock to output a first clock corresponding to a first edge of the reference clock and a second clock corresponding to a second edge, a voltage generation unit configured to generate a first voltage corresponding to a duty ratio of the first clock and a second voltage corresponding to a duty ratio of the second clock, a voltage comparison unit configured to compare levels of the first and second voltages with each other, and a clock delay unit configured to receive one of the first and second clocks to delay the received clock of which delay amount is determined in response to an output signal of the voltage comparison unit.
摘要:
An interbody fusion implant with deployable bone anchors includes a support member, a monolithic body that accommodates the support member, and a longitudinal hole along a vertical length of the support member. The support member includes a first end and a second end. The second end includes two flanges. The flanges are configured to dig into an endplate of a vertebral body. The flanges of the support member provide a location fixation on an implantation of the interbody fusion implant into the vertebral body. The support member may also include at least one of a clip shaped support member and an I-shaped support member. The I-shaped support member may allow a rigidity and a support in flexion-extension through a living-hinge positioned in a middle of the I-shaped support member. The longitudinal hole sustains loads imported on the interbody fusion implant and allows the interbody fusion implant to flex freely.
摘要:
A semiconductor memory device includes: a variable delay for delaying a delay locked loop (DLL) clock by a predetermined delay time to output a delayed DLL clock; an output driver for outputting data and data strobe signal in response to the delayed DLL clock; and a calibration controller for controlling the predetermined delay time of the variable delay in response to output AC parameters.
摘要:
A phase change random access memory (PCRAM) device and method of manufacturing the same are provided. The PCRAM includes bottom electrode contacts formed on a semiconductor substrate that includes a lower structure, phase-change material patterns in contact with the bottom electrode contacts, respectively, and heat insulating units formed between the phase-change material patterns.