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    CHIP TYPE LAMINATED CAPACITOR
    2.
    发明申请
    CHIP TYPE LAMINATED CAPACITOR 有权
    芯片型层压电容器

    公开(公告)号：US20120327555A1

    公开(公告)日：2012-12-27

    申请号：US13529766

    申请日：2012-06-21

    申请人： Young Ghyu AHN ,  Byoung Hwa Lee ,  Min Cheol Park ,  Young Hoon Song ,  Mi Hee Lee

    发明人： Young Ghyu AHN ,  Byoung Hwa Lee ,  Min Cheol Park ,  Young Hoon Song ,  Mi Hee Lee

    IPC分类号： H01G4/12

    CPC分类号： H01G4/01 ,  H01G4/12 ,  H01G4/232 ,  H01G4/30

    摘要： There is provided a chip type laminated capacitor, including: a ceramic body including a dielectric layer having a thickness equal to 10 or more times an average particle diameter of a grain included therein and being 3 □m or less; first and second outer electrodes formed on both ends of the ceramic body in a length direction; first and second band parts formed to extend inwardly of the ceramic body in the length direction on a length-width (L-W) plane from the first and second outer electrodes and having different lengths; and third and fourth band parts formed to extend inwardly of the ceramic body in the length direction on a length-thickness (L-T) plane from the first and second outer electrodes and having different lengths.

    摘要翻译： 提供了一种片式叠层电容器，其包括：陶瓷体，其包括厚度等于其中包含的晶粒的平均粒径的10倍以上且为3μm以下的电介质层; 第一外电极和第二外电极，其在长度方向上形成在陶瓷体的两端; 第一和第二带部分形成为在第一和第二外部电极的长度（L-W）平面上沿长度方向在陶瓷体的内部延伸并具有不同的长度; 以及第三和第四带部分，其形成为在长度方向上在距第一和第二外部电极的长度 - 厚度（L-T）平面上延伸到陶瓷体的内侧并具有不同的长度。

    Method of fine patterning semiconductor device
    4.
    发明申请
    Method of fine patterning semiconductor device 有权
    精细图案化半导体器件的方法

    公开(公告)号：US20090246966A1

    公开(公告)日：2009-10-01

    申请号：US12217782

    申请日：2008-07-09

    申请人： Nam-Myun Cho ,  Myeong-Cheol Kim ,  Shi-Yong Yi ,  Young-Hoon Song ,  Young-Ju Park

    发明人： Nam-Myun Cho ,  Myeong-Cheol Kim ,  Shi-Yong Yi ,  Young-Hoon Song ,  Young-Ju Park

    IPC分类号： H01L21/308

    CPC分类号： H01L21/02118 ,  H01L21/02282 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/1052

    摘要： For integrated circuit fabrication, at least one spacer support structure is formed in a first area over a semiconductor substrate, and a mask material is deposited on exposed surfaces of the spacer support structure and on a second area over the semiconductor substrate. A masking structure is formed on a portion of the mask material in the second area, and the mask material is patterned to form spacers on sidewalls of the spacer support structure and to form a mask pattern under the masking structure. The spacer support structure and the masking structure are comprised of respective high carbon content materials that have been spin-coated and have substantially a same etch selectivity.

    摘要翻译： 对于集成电路制造，在半导体衬底上的第一区域中形成至少一个间隔件支撑结构，并且掩模材料沉积在间隔件支撑结构的暴露表面上并在半导体衬底上的第二区域上。 在第二区域中的掩模材料的一部分上形成掩模结构，并且掩模材料被图案化以在间隔物支撑结构的侧壁上形成间隔物，并在掩模结构下方形成掩模图案。 间隔物支撑结构和掩蔽结构由已经旋涂并具有基本上相同蚀刻选择性的相应的高碳含量材料构成。

    Coacervate having an ionic polymer mixed with the adhesive protein of a mussel or of a species of the variome thereof
    5.
    发明授权
    Coacervate having an ionic polymer mixed with the adhesive protein of a mussel or of a species of the variome thereof 失效
    具有与贻贝或其变体种的粘合蛋白混合的离子聚合物的凝聚体

    公开(公告)号：US08673986B2

    公开(公告)日：2014-03-18

    申请号：US13376001

    申请日：2010-08-06

    申请人： Hyung Joon Cha ,  Yoo Seong Choi ,  Dong Gyun Kang ,  Young Hoon Song ,  Seonghye Lim ,  Bong-Hyuk Choi

    发明人： Hyung Joon Cha ,  Yoo Seong Choi ,  Dong Gyun Kang ,  Young Hoon Song ,  Seonghye Lim ,  Bong-Hyuk Choi

    IPC分类号： A61K47/30

    CPC分类号： C07K14/43504

    摘要： The present invention relates to a coacervate comprising a mussel adhesive protein and an anionic polymer, and more particularly, to a coacervate prepared by mixing a mussel adhesive protein with an anionic polymer, and a novel use thereof. In the present invention, a coacervate prepared by mixing a mussel adhesive protein and an anionic polymer shows a very excellent adhesive strength to various substrates such as cells or metals, and is able to maintain its adhesive strength in the presence of water or under water, thereby being effectively used as an adhesive. Moreover, it has an activity capable of encapsulating bioactive materials, thereby being effectively used as an active component of a composition for delivering bioactive materials.

    摘要翻译： 本发明涉及包含贻贝粘合蛋白和阴离子聚合物的凝聚层，更具体地，涉及通过将贻贝粘合蛋白与阴离子聚合物混合制备的凝聚层及其新用途。 在本发明中，通过混合贻贝粘合蛋白质和阴离子聚合物制备的凝聚层对各种底物如细胞或金属显示非常优异的粘合强度，并且能够在水或水下存在下保持其粘合强度， 从而有效地用作粘合剂。 此外，它具有能够包封生物活性材料的活性，从而有效地用作用于递送生物活性材料的组合物的活性组分。

    Plasma reaction apparatus, plasma reaction method using the same, plasma reaction method of persistent gas, and apparatus for decreasing NOx by occlusion catalyst
    6.
    发明授权
    Plasma reaction apparatus, plasma reaction method using the same, plasma reaction method of persistent gas, and apparatus for decreasing NOx by occlusion catalyst 有权
    等离子体反应装置，使用其的等离子体反应方法，持续气体的等离子体反应方法，以及通过堵塞催化剂降低NOx的装置

    公开(公告)号：US08568662B2

    公开(公告)日：2013-10-29

    申请号：US11992077

    申请日：2006-10-09

    申请人： Dae Hoon Lee ,  Kwan Tae Kim ,  Young Hoon Song ,  Min Suk Cha ,  Jae Ok Lee ,  Seock Joon Kim

    发明人： Dae Hoon Lee ,  Kwan Tae Kim ,  Young Hoon Song ,  Min Suk Cha ,  Jae Ok Lee ,  Seock Joon Kim

    IPC分类号： B01J19/08

    CPC分类号： B01J19/088 ,  B01D53/32 ,  B01D53/8631 ,  B01D2257/404 ,  B01D2259/818 ,  B01J2219/0809 ,  B01J2219/0824 ,  B01J2219/083 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0883 ,  H05H1/48

    摘要： The present invention relates to a plasma reaction apparatus and a plasma reaction method using the same. More particularly, the present invention relates to a plasma reaction apparatus which is applied to the reforming of fuel by generating rotating arc plasma and using the rotating arc being generated, the chemical treatment of a persistent gas, and the apparatus for decreasing NOx by an occlusion catalyst, and a plasma reaction method using the same. For this purpose, a raw material for a reaction is allowed to flow through an inflow hole in a swirl structure so that the raw material forms a rotating flow to progress. Accordingly, the raw material is sufficiently reacted in a plasma reaction space of a restrictive volume, and a high temperature plasma reaction is more promptly performed. Furthermore, a plasma reaction zone is expanded, prior to discharge, by a broad area chamber formed as the width of an upper part of a furnace is expanded, and plasma being generated is expanded and stayed as a pointed end spaced from an electrode at a predetermined interval is formed at an expanded end. Accordingly, the present invention relates to a plasma reaction apparatus and a plasma reaction method using the same, a plasma reaction method of a persistent gas, and an apparatus decreasing NOx by an occlusion catalyst, all of which are capable of excluding the discontinuity of the plasma reaction zone.

    摘要翻译： 本发明涉及一种等离子体反应装置及使用其的等离子体反应方法。 更具体地，本发明涉及一种等离子体反应装置，其通过产生旋转电弧等离子体并利用所产生的旋转电弧，持续气体的化学处理和通过闭塞来降低NOx的装置应用于燃料重整 催化剂和使用其的等离子体反应方法。 为此，允许用于反应的原料流过旋流结构中的流入孔，使得原料形成旋转流动进行。 因此，原料在限制体积的等离子体反应空间中充分反应，更迅速地进行高温等离子体反应。 此外，等离子体反应区在放电之前被扩大，当炉的上部的宽度被扩大时形成的宽区域，并且产生的等离子体膨胀并且作为与电极间隔开的尖端保持 在扩展端形成预定间隔。 因此，本发明涉及使用其的等离子体反应装置及其等离子体反应方法，持续气体的等离子体反应方法以及通过阻塞催化剂减少NOx的装置，所有这些都能够排除不均匀性 等离子体反应区。

    Plasma reaction, apparatus for decreasing NOx by occlusion catalyst using the same
    7.
    发明授权
    Plasma reaction, apparatus for decreasing NOx by occlusion catalyst using the same 有权
    等离子体反应，使用该催化剂减少NOx的装置

    公开(公告)号：US08524162B2

    公开(公告)日：2013-09-03

    申请号：US13567481

    申请日：2012-08-06

    申请人： Dae Hoon Lee ,  Kwan Tae Kim ,  Young Hoon Song ,  Min Suk Cha ,  Jae Ok Lee ,  Seock Joon Kim

    发明人： Dae Hoon Lee ,  Kwan Tae Kim ,  Young Hoon Song ,  Min Suk Cha ,  Jae Ok Lee ,  Seock Joon Kim

    IPC分类号： B01J19/08

    CPC分类号： B01J19/088 ,  B01D53/32 ,  B01D53/8631 ,  B01D2257/404 ,  B01D2259/818 ,  B01J2219/0809 ,  B01J2219/0824 ,  B01J2219/083 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0883 ,  H05H1/48

    摘要： A plasma reaction apparatus and method applied to reformation of fuel by generating and using rotating arc plasma in a furnace, the chemical treatment of a persistent gas, and the apparatus for decreasing NOx by an occlusion catalyst. A raw material for a reaction is allowed to flow into the furnace through a hole, causing it to flow within the furnace in a continuous swirl. Furthermore, an expanded plasma reaction zone is provided by a wide area chamber which is formed on an upper part of the furnace and has a greater width than that of a lower part of the furnace, and thus a plasma being generated can be expanded by the expanded plasma zone and delayed from flowing out of the furnace by corners of the wide area chamber that is spaced from a plasma inducing electrode therein.

    摘要翻译： 一种用于通过在炉中产生和使用旋转电弧等离子体来改变燃料的等离子体反应装置和方法，持续气体的化学处理以及通过闭塞催化剂降低NOx的装置。 允许反应原料通过孔流入炉中，使其在炉内以连续的涡流流动。 此外，扩大的等离子体反应区由形成在炉的上部的宽的区域室提供，并且具有比炉的下部更大的宽度，因此产生的等离子体可以通过 扩张的等离子体区域，并且与从其中的等离子体诱导电极间隔开的广域室的角落延迟流出炉外。

    Chip type laminated capacitor
    9.
    发明授权
    Chip type laminated capacitor 有权
    片式叠层电容器

    公开(公告)号：US08385048B2

    公开(公告)日：2013-02-26

    申请号：US13529766

    申请日：2012-06-21

    申请人： Young Ghyu Ahn ,  Byoung Hwa Lee ,  Min Cheol Park ,  Young Hoon Song ,  Mi Hee Lee

    发明人： Young Ghyu Ahn ,  Byoung Hwa Lee ,  Min Cheol Park ,  Young Hoon Song ,  Mi Hee Lee

    IPC分类号： H01G4/06

    CPC分类号： H01G4/01 ,  H01G4/12 ,  H01G4/232 ,  H01G4/30

    摘要： There is provided a chip type laminated capacitor, including: a ceramic body including a dielectric layer having a thickness equal to 10 or more times an average particle diameter of a grain included therein and being 3 □m or less; first and second outer electrodes formed on both ends of the ceramic body in a length direction; first and second band parts formed to extend inwardly of the ceramic body in the length direction on a length-width (L-W) plane from the first and second outer electrodes and having different lengths; and third and fourth band parts formed to extend inwardly of the ceramic body in the length direction on a length-thickness (L-T) plane from the first and second outer electrodes and having different lengths.

    摘要翻译： 提供了一种片式叠层电容器，其包括：陶瓷体，其包括厚度等于其中包含的晶粒的平均粒径的10倍以上且为3μm以下的电介质层; 第一外电极和第二外电极，其在长度方向上形成在陶瓷体的两端; 第一和第二带部分形成为在第一和第二外部电极的长度（L-W）平面上沿长度方向在陶瓷体的内部延伸并具有不同的长度; 以及第三和第四带部分，其形成为在长度方向上在距第一和第二外部电极的长度 - 厚度（L-T）平面上延伸到陶瓷体的内侧并具有不同的长度。

    Method of fine patterning semiconductor device
    10.
    发明授权
    Method of fine patterning semiconductor device 有权
    精细图案化半导体器件的方法

    公开(公告)号：US07998357B2

    公开(公告)日：2011-08-16

    申请号：US12217782

    申请日：2008-07-09

    申请人： Nam-Myun Cho ,  Myeong-Cheol Kim ,  Shi-Yong Yi ,  Young-Hoon Song ,  Young-Ju Park

    发明人： Nam-Myun Cho ,  Myeong-Cheol Kim ,  Shi-Yong Yi ,  Young-Hoon Song ,  Young-Ju Park

    IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC分类号： H01L21/02118 ,  H01L21/02282 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/1052

    摘要： For integrated circuit fabrication, at least one spacer support structure is formed in a first area over a semiconductor substrate, and a mask material is deposited on exposed surfaces of the spacer support structure and on a second area over the semiconductor substrate. A masking structure is formed on a portion of the mask material in the second area, and the mask material is patterned to form spacers on sidewalls of the spacer support structure and to form a mask pattern under the masking structure. The spacer support structure and the masking structure are comprised of respective high carbon content materials that have been spin-coated and have substantially a same etch selectivity.

    摘要翻译： 对于集成电路制造，在半导体衬底上的第一区域中形成至少一个间隔件支撑结构，并且掩模材料沉积在间隔件支撑结构的暴露表面上并在半导体衬底上的第二区域上。 在第二区域中的掩模材料的一部分上形成掩模结构，并且掩模材料被图案化以在间隔物支撑结构的侧壁上形成间隔物，并在掩模结构下方形成掩模图案。 间隔物支撑结构和掩蔽结构由已经旋涂并具有基本上相同蚀刻选择性的相应的高碳含量材料构成。