公开(公告)号：US08845810B2

公开(公告)日：2014-09-30

申请号：US11874365

申请日：2007-10-18

申请人： Young Joo Hwang

发明人： Young Joo Hwang

IPC分类号： C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/683

CPC分类号： H01J37/32788 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/68742

摘要： A substrate damage prevention system and method for a plasma treating apparatus are provided. The system may include a lower electrode on which a substrate may be mounted, an inert gas supply unit which may supply an inert gas to an upper surface of the lower electrode on which the substrate is mounted, and an air supply unit which may supply air to the upper surface of the lower electrode. An inert gas may be supplied between the lower electrode and the substrate in order to control the temperature of the substrate during the chucking. Air may be supplied between the lower electrode and the substrate during dechucking in order to allow the substrate to be easily separated from the lower electrode.

摘要翻译： 提供了一种用于等离子体处理装置的基板损伤预防系统和方法。 该系统可以包括可以在其上安装基板的下电极，可以向安装有基板的下电极的上表面供应惰性气体的惰性气体供应单元和可供应空气的空气供应单元 到下电极的上表面。 可以在下电极和基板之间供应惰性气体，以便在卡盘期间控制基板的温度。 在脱扣时可以在下电极和基板之间供应空气，以便允许基板容易地与下电极分离。

公开(公告)号：US20090263230A1

公开(公告)日：2009-10-22

申请号：US12257628

申请日：2008-10-24

申请人： Young Joo HWANG

发明人： Young Joo HWANG

IPC分类号： H01L21/677

CPC分类号： H01L21/67201 ,  H01L21/68742 ,  H01L21/6875

摘要： A cluster apparatus for processing a substrate includes a load-lock chamber to receive a substrate, a transfer chamber adjacent to the load-lock chamber, one or more processing chambers each having a side facing the transfer chamber, and a robot in the transfer chamber to unload the substrate from or load the substrate into at least one of the one or more processing chambers or the load-lock chamber. A rotating stage is included in the load-lock chamber to support and rotate the substrate to a desired orientation.

摘要翻译： 用于处理基板的集群装置包括：接收基板的负载锁定室，与装载锁定室相邻的传送室，各自具有面向传送室的一侧的一个或多个处理室，以及传送室中的机器人 将基板卸载或者将基板装载到一个或多个处理室或装载锁定室中的至少一个中。 旋转台被包括在加载锁定室中以支撑和旋转基板到期望的取向。

公开(公告)号：US20080138535A1

公开(公告)日：2008-06-12

申请号：US11874365

申请日：2007-10-18

申请人： Young Joo HWANG

发明人： Young Joo HWANG

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： H01J37/32788 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/68742

摘要： A substrate damage prevention system and method for a plasma treating apparatus are provided. The system may include a lower electrode on which a substrate may be mounted, an inert gas supply unit which may supply an inert gas to an upper surface of the lower electrode on which the substrate is mounted, and an air supply unit which may supply air to the upper surface of the lower electrode. An inert gas may be supplied between the lower electrode and the substrate in order to control the temperature of the substrate during the chucking. Air may be supplied between the lower electrode and the substrate during dechucking in order to allow the substrate to be easily separated from the lower electrode.

摘要翻译： 提供了一种用于等离子体处理装置的基板损伤预防系统和方法。 该系统可以包括可以在其上安装基板的下电极，可以向安装有基板的下电极的上表面供应惰性气体的惰性气体供应单元和可供应空气的空气供应单元 到下电极的上表面。 可以在下电极和基板之间供应惰性气体，以便在卡盘期间控制基板的温度。 在脱扣时可以在下电极和基板之间供应空气，以便允许基板容易地与下电极分离。

公开(公告)号：US20060048709A1

公开(公告)日：2006-03-09

申请号：US11219956

申请日：2005-09-06

申请人： Young Lee ,  Jun Choi ,  Hyun Ahn ,  Chan-Ho Kang ,  Hyun-Woo Baek ,  Young-Joo Hwang

发明人： Young Lee ,  Jun Choi ,  Hyun Ahn ,  Chan-Ho Kang ,  Hyun-Woo Baek ,  Young-Joo Hwang

IPC分类号： C23C16/00

CPC分类号： C23C16/4585

摘要： Disclosed herein is a plasma processing apparatus, which generates plasma within a vacuum chamber to process semiconductor substrates using the plasma. The apparatus comprises a substrate mounting table, an outer lifting bar, and a baffle. The outer lifting bar comprises a driving shaft, and a substrate supporting member coupled perpendicular to an upper end of the driving shaft. The baffle comprises a baffle plate coupled to the upper end of the driving shaft, and a shielding portion coupled to a lower surface of the baffle plate. The substrate supporting member is a foldable substrate supporting member. The baffle and the substrate supporting member are driven up and down at the same time by the driving shaft. As a result, it is possible to protect the substrate supporting member from plasma, and to prevent interference between the baffle and the outer lifting bar during operation of the plasma processing apparatus.

公开(公告)号：US08273211B2

公开(公告)日：2012-09-25

申请号：US12246563

申请日：2008-10-07

申请人： Gwang Ho Hur ,  Jun Young Choi ,  Cheol Won Lee ,  Hyun Hwan Ahn ,  Young Joo Hwang ,  Chun Sik Kim

发明人： Gwang Ho Hur ,  Jun Young Choi ,  Cheol Won Lee ,  Hyun Hwan Ahn ,  Young Joo Hwang ,  Chun Sik Kim

IPC分类号： H01L21/3065

CPC分类号： H01J37/3244

摘要： Disclosed herein is a flat panel display manufacturing apparatus in a predetermined process is performed using plasma generated therein. In such a flat panel display manufacturing apparatus, a process gas is supplied into a chamber in an evenly diffused state to generate even plasma inside a symmetrical interior space of the chamber. Consequently, the flat panel display manufacturing apparatus can appropriately control flow rate of the plasma, thereby being capable of performing even processing on a large-scale substrate. In the flat panel display manufacturing apparatus, a substrate pedestal thereof is provided with a combination of vertical and horizontal shielding members, thereby being entirely protected from attack of the plasma, resulting in an increased life-span.

摘要翻译： 这里公开了使用其中产生的等离子体进行预定处理的平板显示器制造装置。 在这种平板显示器制造装置中，处理气体以均匀扩散的状态供应到室中，以在室的对称内部空间内产生均匀的等离子体。 因此，平板显示器制造装置可以适当地控制等离子体的流量，从而能够对大规模基板进行均匀的处理。 在平板显示器制造装置中，其基板基座设置有垂直和水平屏蔽构件的组合，从而完全防止等离子体的侵蚀，从而延长使用寿命。

公开(公告)号：US07699957B2

公开(公告)日：2010-04-20

申请号：US11711612

申请日：2007-02-28

申请人： Seoung-Wook Lee ,  Young-Joo Hwang

发明人： Seoung-Wook Lee ,  Young-Joo Hwang

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/54 ,  C23C16/5096 ,  H01J2237/0206 ,  Y10S156/914 ,  Y10S414/135

摘要： Disclosed is a plasma processing apparatus, in which parasitic plasma is not generated in a transfer chamber. The plasma processing apparatus has a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers. Each of the gate valves includes a valve housing provided between the chambers such that the valve housing contacts side surfaces of the chambers by interposing sealing members therebetween, and forming a designated closed space therein; a valve including a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber, and a back plate contacting the inner surface of the valve housing on the side of the transfer chamber; a valve driving unit connected to the valve for moving the valve in the vertical direction; and a ground member formed on the surface of the valve for electrically connecting the valve and the valve housing when the valve contacts the inner surface of the valve housing.

摘要翻译： 公开了一种等离子体处理装置，其中在传送室中不产生寄生等离子体。 等离子体处理装置具有装载锁定室，传送室，处理室和安装在用于传送基板的室之间的闸阀和打开和关闭室的开口的闸阀。 每个闸阀包括设置在室之间的阀壳体，使得阀壳体通过在其间插入密封构件而接触室的侧表面，并在其中形成指定的封闭空间; 阀，其包括与处理室侧面上的阀壳体的内表面接触的密封板和在传送室侧面与阀壳体的内表面接触的后板; 连接到阀的阀驱动单元，用于沿垂直方向移动阀; 以及形成在所述阀的表面上的接地构件，用于当所述阀接触所述阀壳体的内表面时电气连接所述阀和所述阀壳体。

公开(公告)号：US20090025877A1

公开(公告)日：2009-01-29

申请号：US12246563

申请日：2008-10-07

申请人： Gwang Ho HUR ,  Jun Young CHOI ,  Cheol Won LEE ,  Hyun Hwan AHN ,  Young Joo HWANG ,  Chun Sik KIM

发明人： Gwang Ho HUR ,  Jun Young CHOI ,  Cheol Won LEE ,  Hyun Hwan AHN ,  Young Joo HWANG ,  Chun Sik KIM

IPC分类号： H01L21/3065

CPC分类号： H01J37/3244

摘要： Disclosed herein is a flat panel display manufacturing apparatus in a predetermined process is performed using plasma generated therein. In such a flat panel display manufacturing apparatus, a process gas is supplied into a chamber in an evenly diffused state to generate even plasma inside a symmetrical interior space of the chamber. Consequently, the flat panel display manufacturing apparatus can appropriately control flow rate of the plasma, thereby being capable of performing even processing on a large-scale substrate. In the flat panel display manufacturing apparatus, a substrate pedestal thereof is provided with a combination of vertical and horizontal shielding members, thereby being entirely protected from attack of the plasma, resulting in an increased life-span.

摘要翻译： 这里公开了使用其中产生的等离子体进行预定处理的平板显示器制造装置。 在这种平板显示器制造装置中，处理气体以均匀扩散的状态供应到室中，以在室的对称内部空间内产生均匀的等离子体。 因此，平板显示器制造装置可以适当地控制等离子体的流量，从而能够对大规模基板进行均匀的处理。 在平板显示器制造装置中，其基板基座设置有垂直和水平屏蔽构件的组合，从而完全防止等离子体的侵蚀，从而延长使用寿命。

公开(公告)号：US07886687B2

公开(公告)日：2011-02-15

申请号：US11313022

申请日：2005-12-20

申请人： Young Jong Lee ,  Jun Young Choi ,  Saeng Hyun Jo ,  Young-Joo Hwang ,  Jong-Cheon Kim

发明人： Young Jong Lee ,  Jun Young Choi ,  Saeng Hyun Jo ,  Young-Joo Hwang ,  Jong-Cheon Kim

IPC分类号： C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32724

摘要： A plasma processing apparatus for generating plasma in a chamber maintained in a vacuum state and processing a substrate using the plasma. The plasma processing apparatus includes a refrigerant channel for circulating a refrigerant formed in a shower head, thereby easily controlling the temperature of the shower head and improving the reproducibility of plasma treatment.

摘要翻译： 一种等离子体处理装置，用于在保持真空状态的室中产生等离子体，并使用等离子体处理衬底。 等离子体处理装置包括用于使形成在喷淋头中的制冷剂循环的制冷剂通道，从而容易地控制淋浴头的温度并提高等离子体处理的再现性。

公开(公告)号：US07537673B2

公开(公告)日：2009-05-26

申请号：US11219956

申请日：2005-09-06

申请人： Young Jong Lee ,  Jun Young Choi ,  Hyun Hwan Ahn ,  Chan-Ho Kang ,  Hyun-Woo Baek ,  Young-Joo Hwang

发明人： Young Jong Lee ,  Jun Young Choi ,  Hyun Hwan Ahn ,  Chan-Ho Kang ,  Hyun-Woo Baek ,  Young-Joo Hwang

IPC分类号： H01L21/3065 ,  C23C16/00 ,  C23C16/458 ,  C23C16/50

CPC分类号： C23C16/4585

摘要： Disclosed herein is a plasma processing apparatus, which generates plasma within a vacuum chamber to process semiconductor substrates using the plasma. The apparatus comprises a substrate mounting table, an outer lifting bar, and a baffle. The outer lifting bar comprises a driving shaft, and a substrate supporting member coupled perpendicular to an upper end of the driving shaft. The baffle comprises a baffle plate coupled to the upper end of the driving shaft, and a shielding portion coupled to a lower surface of the baffle plate. The substrate supporting member is a foldable substrate supporting member. The baffle and the substrate supporting member are driven up and down at the same time by the driving shaft. As a result, it is possible to protect the substrate supporting member from plasma, and to prevent interference between the baffle and the outer lifting bar during operation of the plasma processing apparatus.

摘要翻译： 本文公开了一种等离子体处理装置，其在真空室内产生等离子体以使用等离子体处理半导体衬底。 该装置包括基板安装台，外提升杆和挡板。 外提升杆包括驱动轴和垂直于驱动轴的上端联接的基板支撑构件。 挡板包括耦合到驱动轴的上端的挡板和耦合到挡板的下表面的屏蔽部分。 衬底支撑构件是可折叠衬底支撑构件。 挡板和基板支撑构件通过驱动轴同时上下驱动。 结果，可以在等离子体处理装置的操作期间保护基板支撑构件免受等离子体的影响，并且防止挡板和外部提升杆之间的干扰。

公开(公告)号：US20070204958A1

公开(公告)日：2007-09-06

申请号：US11711612

申请日：2007-02-28

申请人： Seoung-Wook Lee ,  Young-Joo Hwang

发明人： Seoung-Wook Lee ,  Young-Joo Hwang

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/54 ,  C23C16/5096 ,  H01J2237/0206 ,  Y10S156/914 ,  Y10S414/135

摘要： Disclosed is a plasma processing apparatus, in which parasitic plasma is not generated in a transfer chamber. The plasma processing apparatus has a load lock chamber, a transfer chamber, a processing chamber, and gate valves installed between the chambers for transferring a substrate and opening and closing openings of the chambers. Each of the gate valves includes a valve housing provided between the chambers such that the valve housing contacts side surfaces of the chambers by interposing sealing members therebetween, and forming a designated closed space therein; a valve including a sealing plate contacting an inner surface of the valve housing on the side of the processing chamber, and a back plate contacting the inner surface of the valve housing on the side of the transfer chamber; a valve driving unit connected to the valve for moving the valve in the vertical direction; and a ground member formed on the surface of the valve for electrically connecting the valve and the valve housing when the valve contacts the inner surface of the valve housing.

摘要翻译： 公开了一种等离子体处理装置，其中在传送室中不产生寄生等离子体。 等离子体处理装置具有装载锁定室，传送室，处理室和安装在用于传送基板的室之间的闸阀和打开和关闭室的开口的闸阀。 每个闸阀包括设置在室之间的阀壳体，使得阀壳体通过在其间插入密封构件而接触室的侧表面，并在其中形成指定的封闭空间; 阀，其包括与处理室侧面上的阀壳体的内表面接触的密封板和在传送室侧面与阀壳体的内表面接触的后板; 连接到阀的阀驱动单元，用于沿垂直方向移动阀; 以及形成在所述阀的表面上的接地构件，用于当所述阀接触所述阀壳体的内表面时电气连接所述阀和所述阀壳体。