公开(公告)号：US20210275832A1

公开(公告)日：2021-09-09

申请号：US15931549

申请日：2020-05-13

申请人： JIAN-KUEN WU ,  YU-JEN WANG

发明人： JIAN-KUEN WU ,  YU-JEN WANG

IPC分类号： A61N5/10

摘要： A system for adjusting radiation target sites dynamically according to the moving states of a target object and for creating a lookup table of the moving states includes a detection chip, a radiation generation device, and a lookup table. The detection chip can be fixed on the target object to detect the current moving state of the target object. The detection chip or the radiation generation device, both configured for wireless signal transmission to each other, can activate or deactivate the radiation emitters of the radiation generation device individually according to the current moving state of the target object and the contents of the lookup table. As the system uses wireless transmission, and the lookup table has recorded the working state of each radiation emitter in each moving state of the target object, radiotherapy can be performed without a large number of tubes or sensors.

公开(公告)号：US09636603B2

公开(公告)日：2017-05-02

申请号：US14876829

申请日：2015-10-07

申请人： Yu-Jen Wang

发明人： Yu-Jen Wang

IPC分类号： A63H37/00 ,  F41B11/24 ,  F41B11/66

CPC分类号： A63H37/00 ,  F41B11/66

摘要： A hand-held cracker snap for spraying projectile includes a main unit, a button, a disk, an air cylinder and a nozzle. The button is loosely disposed in the main unit. The disk is disposed in the main unit and is connected to the button. The air cylinder is disposed in the main unit and is provided with a central tube that can be extended or compressed along an axis repeatedly to suck or squeeze air to or from the air cylinder. The nozzle is a tubular element in the connecting pipe. An end of the nozzle is connected to the interior part of the air cylinder, allowing air to enter or exit the air cylinder via the nozzle. The nozzle guides air into the bullet.

公开(公告)号：US09277167B2

公开(公告)日：2016-03-01

申请号：US13337453

申请日：2011-12-27

申请人： Yu-Jen Wang ,  Chung-Yi Chen

发明人： Yu-Jen Wang ,  Chung-Yi Chen

IPC分类号： H04N7/12 ,  H04N11/02 ,  H04N11/04 ,  H04N7/01

CPC分类号： H04N7/012 ,  H04N7/014

摘要： A motion compensation de-interlacing image processing apparatus is provided. The apparatus includes a motion compensation module, a still compensation module, a motion detection module, and a de-interlacing blending module. The motion compensation module generates a motion compensation pixel according to at least one of a current field, a previous field, and a next field of a target pixel to be interpolated. The still compensation module generates a still compensation pixel according to the previous field and the next field of the target pixel. The motion detection module determines a motion index according to the previous field and the next field of the target pixel. The de-interlacing blending module generates the target pixel by weighted averaging the motion compensation pixel and the still compensation pixel according to the motion index.

摘要翻译： 提供一种运动补偿去隔行图像处理装置。 该装置包括运动补偿模块，静止补偿模块，运动检测模块和去隔行混合模块。 运动补偿模块根据要内插的目标像素的当前场，先前场和下一场中的至少一个产生运动补偿像素。 静止补偿模块根据目标像素的前一场和下一场产生静止补偿像素。 运动检测模块根据目标像素的前一场和下一个场来确定运动索引。 去隔行混合模块通过根据运动索引对运动补偿像素和静止补偿像素进行加权平均来生成目标像素。

公开(公告)号：US08871365B2

公开(公告)日：2014-10-28

申请号：US13406972

申请日：2012-02-28

申请人： Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

发明人： Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

IPC分类号： H01F10/32 ,  G01R33/09 ,  G11C11/15 ,  G11B5/39

CPC分类号： H01L43/12 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/66 ,  G11B5/84 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/305 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

摘要： Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell.

摘要翻译： 通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物/ DL2，在磁性器件中，除了通过在400℃下的更高的热稳定性之外，增强了Hc和Hk / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。 RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压体。 参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并增加存储器单元的保留时间。

公开(公告)号：US08860156B2

公开(公告)日：2014-10-14

申请号：US13609780

申请日：2012-09-11

申请人： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

发明人： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC分类号： H01L29/82

CPC分类号： H01L43/02 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/222 ,  H01L27/224 ,  H01L29/82 ,  H01L43/10

摘要： A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.

摘要翻译： 公开了一种用于自旋电子器件的合成反铁磁（SAF）结构，并具有AP2 /反铁磁（AF）耦合/ CoFeB配置。 SAF结构变薄以减少边缘（Ho）场，同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性（PMA），并通过AF耦合在薄CoFeB层中诱导PMA。 在一个实施例中，通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。 当AP2为（Co / Ni）4，CoFeB厚度为7.5埃时，Ho降至125Oe，Hc为1000Oe，平衡饱和磁化强度产物（Mst）= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB，其中FL2是具有固有PMA的铁磁层。

公开(公告)号：US08710603B2

公开(公告)日：2014-04-29

申请号：US13408555

申请日：2012-02-29

申请人： Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

发明人： Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A magnetic element is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction (MTJ). The free layer may be a single layer or a composite and is comprised of one or more glassing agents that have a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. As a result, a CoFeB free layer, for example, selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

摘要翻译： 公开了一种磁性元件，其中具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面分别产生增强的表面垂直各向异性以增加磁性隧道结（MTJ）中的热稳定性。 自由层可以是单层或复合物，并且由一个或多个在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 结果，例如，CoFeB自由层沿着第一界面和第二界面选择性地结晶，但是在含有提供退火温度的玻璃试剂的中间区域中保持无定形特征小于中间区域的结晶温度。 磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

公开(公告)号：US08553145B2

公开(公告)日：2013-10-08

申请号：US11968658

申请日：2008-01-03

申请人： Yu-Jen Wang ,  Yu-Sen Lin ,  Scott Jen

发明人： Yu-Jen Wang ,  Yu-Sen Lin ,  Scott Jen

IPC分类号： H04N7/01 ,  H04N11/20

CPC分类号： H04N7/012 ,  H04N5/144 ,  H04N7/0137

摘要： An image de-interlacing method comprises: (a) defining a first threshold value and a second threshold value, wherein the second threshold value is larger than the first threshold value; (b) generating a parameter according to motion level of a interlaced image; and (c) utilizing a first interpolation method and a second interpolation method to jointly process the interlaced image if the parameter is in a range between the first threshold value and the second threshold value.

摘要翻译： 图像去隔行方法包括：（a）定义第一阈值和第二阈值，其中所述第二阈值大于所述第一阈值; （b）根据隔行图像的运动级别生成参数; 以及（c）如果所述参数在所述第一阈值和所述第二阈值之间的范围内，则利用第一插值方法和第二内插方法联合处理所述隔行扫描图像。

公开(公告)号：US20130244342A1

公开(公告)日：2013-09-19

申请号：US13419507

申请日：2012-03-14

申请人： Yu-Jen WANG ,  Yuan-Tung CHIN

发明人： Yu-Jen WANG ,  Yuan-Tung CHIN

IPC分类号： H01L21/8246

CPC分类号： H01L43/12 ,  H01L27/222

摘要： A magnetic tunnel junction (MTJ) structure is provided over a device wherein the MTJ comprises a tunnel barrier layer between a free layer and a pinned layer; and a top and bottom electrode inside the MTJ structure. A hard mask layer is formed on the top electrode. The hard mask layer, top electrode, free layer, tunnel barrier layer, and pinned layer are patterned to define the magnetic tunnel junction (MTJ) structures. A first dielectric layer is deposited over the MTJ structures and planarized to expose the top electrode. Thereafter, the top electrode and free layer are patterned. A second dielectric layer is deposited over the MTJ structures and planarized to expose the top electrode. A third dielectric layer is deposited over the MTJ structures and a metal line contact is formed through the third dielectric layer to the top electrode to complete fabrication of the magnetic device.

摘要翻译： 在一个器件上提供一个磁性隧道结（MTJ）结构，其中MTJ包括在自由层和钉扎层之间的隧道势垒层; 以及MTJ结构内的顶部和底部电极。 在顶部电极上形成硬掩模层。 将硬掩模层，顶电极，自由层，隧道势垒层和钉扎层图案化以限定磁隧道结（MTJ）结构。 第一电介质层沉积在MTJ结构上并且被平坦化以暴露顶部电极。 此后，对顶部电极和自由层进行图案化。 第二电介质层沉积在MTJ结构上并且被平坦化以暴露顶部电极。 在MTJ结构上沉积第三电介质层，并且通过第三电介质层形成金属线接触到顶部电极以完成磁性器件的制造。

公开(公告)号：US08508006B2

公开(公告)日：2013-08-13

申请号：US13561201

申请日：2012-07-30

申请人： Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

发明人： Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC分类号： H01L29/82 ,  H01L43/00 ,  H01L29/34 ,  H01L29/74 ,  H01L31/111

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L29/66007 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

摘要翻译： 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA） 是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。 可以在层压层和隧道势垒层之间形成CoFeB层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US08491128B2

公开(公告)日：2013-07-23

申请号：US12885701

申请日：2010-09-20

申请人： Tai-Feng Wu ,  Ching-Chang Chen ,  Yu-Jen Wang ,  Ming-Chieh Chou

发明人： Tai-Feng Wu ,  Ching-Chang Chen ,  Yu-Jen Wang ,  Ming-Chieh Chou

IPC分类号： G03B21/00

CPC分类号： H04N9/3185 ,  G06K2009/363 ,  H04N9/3173

摘要： A method for projection correction includes following steps. An original image is projected as a projection image on an object. A projection-zone image including the projection image is captured from the object. A projection image outline corresponding to the projection image is obtained from the projection-zone image. An operation is performed on the projection image outline to obtain a horizontal inclination and a vertical inclination. The original image is pre-warped according to the horizontal inclination and the vertical inclination to obtain a corrected image, and the corrected image is projected on the object.

摘要翻译： 投影校正的方法包括以下步骤。 将原始图像投影为物体上的投影图像。 从对象捕获包括投影图像的投影区域图像。 从投影区域图像获得与投影图像对应的投影图像轮廓。 对投影图像轮廓进行操作以获得水平倾斜度和垂直倾斜度。 原始图像根据水平倾斜度和垂直倾斜度预弯曲以获得校正图像，并且将校正后的图像投影在物体上。