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公开(公告)号：US20120306053A1
公开(公告)日：2012-12-06
申请号：US13491562
申请日：2012-06-07
Applicant: Kai Shum , Zhuo Chen , Yuhang Ren
Inventor： Kai Shum , Zhuo Chen , Yuhang Ren
IPC: H01L21/368 , H01L29/26
CPC classification number: H01L21/02628 , C03C17/22 , C04B35/5152 , C04B35/6264 , C04B2235/3201 , C04B2235/3293 , H01L21/0237 , H01L21/02422 , H01L21/02521 , H01L31/032 , H01L31/0392 , H01L31/18 , Y02E10/50 , Y02P60/12
Abstract: This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based drop-coating synthesis of cesium tin tri-iodide (CsSnI3) films. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.
Abstract translation: 本发明公开了三碘化铯锡（CsSnI3）薄膜的基于溶液的合成。 更具体地，本发明涉及三碘化铯锡（CsSnI 3）膜的基于溶液的滴涂合成。 CsSnI3膜非常适用于各种应用，如发光和光伏器件。
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公开(公告)号：US08231848B1
公开(公告)日：2012-07-31
申请号：US13443114
申请日：2012-04-10
Applicant: Yuhang Ren , Chivin Sun , Kai Shum
Inventor： Yuhang Ren , Chivin Sun , Kai Shum
CPC classification number: C01B19/002 , B82Y30/00 , B82Y40/00 , C01G15/006 , C01P2002/72 , C01P2002/84 , C01P2002/85 , C01P2004/04 , C01P2004/60 , C01P2004/64 , H01L29/0665 , Y10S977/773 , Y10S977/827
Abstract: Ternary and quaternary Chalcopyrite CuInxGa1-xSySe2-y (CIGS, where 0≦x and y≦1) nanoparticles were synthesized from molecular single source precursors (SSPs) by a one-pot reaction in a high boiling solvent using salt(s) (i.e. NaCl as by-product) as heat transfer agent via conventional convective heating method. The nanoparticles sizes were 1.8 nm to 5.2 nm as reaction temperatures were varied from 150° C. to 190° C. with very high-yield. Tunable nanoparticle size is achieved through manipulation of reaction temperature, reaction time, and precursor concentrations. In addition, the method developed in this study was scalable to achieve ultra-large quantities production of tetragonal and quaternary Chalcopyrite CIGS nanoparticles.
Abstract translation: 三元和四元黄铜矿CuInxGa1-xSySe2-y（CIGS，其中0和nlE; x和y＆nlE; 1）纳米颗粒由分子单源前体（SSPs）通过一锅反应在高沸点溶剂中使用盐（即 NaCl作为副产物）作为传热剂通过常规对流加热方法。 随着反应温度以非常高的产率从150℃变化到190℃，纳米颗粒尺寸为1.8nm至5.2nm。 可调谐的纳米颗粒尺寸通过操作反应温度，反应时间和前体浓度来实现。 此外，本研究开发的方法具有可扩展性，可实现四价和四级黄铜矿CIGS纳米粒子的超大批量生产。
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公开(公告)号：US09196482B2
公开(公告)日：2015-11-24
申请号：US13491562
申请日：2012-06-07
Applicant: Kai Shum , Zhuo Chen , Yuhang Ren
Inventor： Kai Shum , Zhuo Chen , Yuhang Ren
IPC: A01B11/00 , H01L21/02 , C04B35/515 , C04B35/626 , C03C17/22 , H01L31/032 , H01L31/0392 , H01L31/18
CPC classification number: H01L21/02628 , C03C17/22 , C04B35/5152 , C04B35/6264 , C04B2235/3201 , C04B2235/3293 , H01L21/0237 , H01L21/02422 , H01L21/02521 , H01L31/032 , H01L31/0392 , H01L31/18 , Y02E10/50 , Y02P60/12
Abstract: This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based drop-coating synthesis of cesium tin tri-iodide (CsSnI3) films. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.
Abstract translation: 本发明公开了三碘化铯锡（CsSnI3）薄膜的基于溶液的合成。 更具体地，本发明涉及三碘化铯锡（CsSnI 3）膜的基于溶液的滴涂合成。 CsSnI3膜非常适用于各种应用，如发光和光伏器件。
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公开(公告)号：US08840809B2
公开(公告)日：2014-09-23
申请号：US13491564
申请日：2012-06-07
Applicant: Kai Shum , Zhuo Chen , Yuhang Ren
Inventor： Kai Shum , Zhuo Chen , Yuhang Ren
CPC classification number: H01L31/18 , H01L21/02521 , H01L21/02628 , H01L31/032 , H01L33/005 , H01L33/26
Abstract: This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based spray-coating synthesis of cesium tin tri-iodide (CsSnI3) thin films. This invention is also directed to effective and inexpensive methods to synthesize the thin CsSnI3 films on large-area substrates such as glass, ceramics, glass, ceramic, silicon, and metal foils. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.
Abstract translation: 本发明公开了三碘化铯锡（CsSnI3）薄膜的基于溶液的合成。 更具体地，本发明涉及三碘化铯锡（CsSnI 3）薄膜的基于溶液的喷涂合成。 本发明还涉及在诸如玻璃，陶瓷，玻璃，陶瓷，硅和金属箔的大面积基板上合成薄的CsSnI 3薄膜的有效且廉价的方法。 CsSnI3膜非常适用于各种应用，如发光和光伏器件。
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公开(公告)号：US20130139872A1
公开(公告)日：2013-06-06
申请号：US13491564
申请日：2012-06-07
Applicant: Kai Shum , Zhuo Chen , Yuhang Ren
Inventor： Kai Shum , Zhuo Chen , Yuhang Ren
IPC: H01L31/18 , H01L31/032
CPC classification number: H01L31/18 , H01L21/02521 , H01L21/02628 , H01L31/032 , H01L33/005 , H01L33/26
Abstract: This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based spray-coating synthesis of cesium tin tri-iodide (CsSnI3) thin films. This invention is also directed to effective and inexpensive methods to synthesize the thin CsSnI3 films on large-area substrates such as glass, ceramics, glass, ceramic, silicon, and metal foils. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.
Abstract translation: 本发明公开了三碘化铯锡（CsSnI3）薄膜的基于溶液的合成。 更具体地，本发明涉及三碘化铯锡（CsSnI 3）薄膜的基于溶液的喷涂合成。 本发明还涉及在诸如玻璃，陶瓷，玻璃，陶瓷，硅和金属箔的大面积基板上合成薄的CsSnI 3薄膜的有效且廉价的方法。 CsSnI3膜非常适用于各种应用，如发光和光伏器件。
