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公开(公告)号：US08809986B2
公开(公告)日：2014-08-19
申请号：US13321714
申请日：2009-05-29
申请人： Hidefumi Takaya , Kimimori Hamada , Yuji Nishibe
发明人： Hidefumi Takaya , Kimimori Hamada , Yuji Nishibe
IPC分类号： H01L29/66
CPC分类号： H01L29/7815 , H01L29/0653 , H01L29/0873 , H01L29/0878 , H01L29/0886 , H01L29/1095
摘要： Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current. In the semiconductor device, at least one of an impurity concentration and a thickness of each semiconductor layer is adjusted such that a value calculated by a following equation is less than a predetermined value: [ ∑ i = 1 n ( R Mi × k Mi ) - ∑ i = 1 n ( R Si × k Si ) ] / ∑ i = 1 n ( R Mi × k Mi ) where a temperature-dependent resistance changing rate of an i-th semiconductor layer (i=1 to n) of the main element domain is RMi; a resistance ratio of the i-th semiconductor layer of the main element domain relative to the entire main element domain is kMi; a temperature-dependent resistance changing rate of the i-th semiconductor layer of the sense element domain is RSi; and a resistance ratio of the i-th semiconductor layer of the sense element domain to the entire sense element domain is kSi.
摘要翻译： 提供了能够降低电流感测比的温度变化并准确地检测电流的半导体器件。 在半导体器件中，调整每个半导体层的杂质浓度和厚度中的至少一个，使得由以下等式计算的值小于预定值：[Σi = 1 n（R Mi×k Mi ） - Σi = 1 n（R Si×k Si）] /Σi = 1 n（R Mi×k Mi）其中，第i个半导体层的温度依赖电阻变化率（i = 1〜 n）的主要元素域是RMi; 主元件区域的第i个半导体层相对于整个主要元件区域的电阻比为kMi; 感测元件畴的第i个半导体层的温度依赖性电阻变化率为RSi; 并且感测元件畴的第i个半导体层与整个感测元件畴的电阻比为kSi。
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公开(公告)号：US20110193408A1
公开(公告)日：2011-08-11
申请号：US13125247
申请日：2009-10-21
申请人： Hiroo Fuma , Yuji Nishibe , Kota Manabe , Nobuyuki Kitamura
发明人： Hiroo Fuma , Yuji Nishibe , Kota Manabe , Nobuyuki Kitamura
IPC分类号： B60L1/00
CPC分类号： H02M3/1584
摘要： An object is to miniaturize booster coils used in a vehicle-mounted booster converter. In the design method for a vehicle-mounted multi-phase converter including multiple booster coils and a switching circuit for generating an induced electromotive force at each booster coil by switching of current flowing to each booster coil for applying an output voltage, based on an input voltage and the induced electromotive force generated at each booster coil, to a vehicle drive circuit, a coupling factor indicating the extent by which the induced electromotive force in one of multiple booster coils contributes to the voltage between terminals of another booster coil is determined on the basis of a relationship between the coupling factor and current ripple component of each booster coil.
摘要翻译： 目的在于使用在车载升压转换器中的升压线圈小型化。 在包括多个升压线圈的车载多相转换器的设计方法中，以及用于通过切换流过每个升压线圈以提供输出电压的电流来产生每个升压线圈处的感应电动势的开关电路， 电压和在每个升压线圈处产生的感应电动势到车辆驱动电路，耦合因子表示多个升压线圈中的一个中的感应电动势对另一个升压线圈的端子之间的电压有贡献的程度， 每个增压线圈的耦合因子和电流纹波分量之间的关系的基础。
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公开(公告)号：US20140054688A1
公开(公告)日：2014-02-27
申请号：US14074212
申请日：2013-11-07
申请人： Hidefumi TAKAYA , Kimimori HAMADA , Yuji NISHIBE
发明人： Hidefumi TAKAYA , Kimimori HAMADA , Yuji NISHIBE
IPC分类号： H01L29/78
CPC分类号： H01L29/7815 , H01L29/0653 , H01L29/0873 , H01L29/0878 , H01L29/0886 , H01L29/1095
摘要： Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current In the semiconductor device, at least one of an impurity concentration and a thickness of each semiconductor layer is adjusted such that a value calculated by a following equation is less than a predetermined value: [ ∑ i = 1 n ( R Mi × k Mi ) - ∑ i = 1 n ( R Si × k Si ) ] / ∑ i = 1 n ( R Mi × k Mi ) where a temperature-dependent resistance changing rate of an i-th semiconductor layer (i=1 to n) of the main element domain is RMi; a resistance ratio of the i-th semiconductor layer of the main element domain relative to the entire main element domain is kMi; a temperature-dependent resistance changing rate of the i-th semiconductor layer of the sense element domain is RSi; and a resistance ratio of the i-th semiconductor layer of the sense element domain to the entire sense element domain is kSi.
摘要翻译： 提供了能够降低电流感测比的温度变化并精确检测电流的半导体器件。在半导体器件中，调整每个半导体层的杂质浓度和厚度中的至少一个，使得通过a 以下等式小于预定值：[Σi = 1 n（R Mi×k Mi） - Σi = 1 n（R Si×k Si）] /Σi = 1 n（R Mi×k Mi）其中主要元素域的第i个半导体层（i = 1至n）的温度依赖性电阻变化率为RMi; 主元件区域的第i个半导体层相对于整个主要元件区域的电阻比为kMi; 感测元件畴的第i个半导体层的温度依赖性电阻变化率为RSi; 并且感测元件畴的第i个半导体层与整个感测元件畴的电阻比为kSi。
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公开(公告)号：US5353636A
公开(公告)日：1994-10-11
申请号：US95620
申请日：1993-07-21
申请人： Kazuhiro Sakurai , Yutaka Obuchi , Yuji Nishibe , Yutaka Nonomura , Kouji Tsukada , Masaharu Takeuchi , Masanori Miyashita
发明人： Kazuhiro Sakurai , Yutaka Obuchi , Yuji Nishibe , Yutaka Nonomura , Kouji Tsukada , Masaharu Takeuchi , Masanori Miyashita
CPC分类号： G01M15/11
摘要： A torque sensor which can detect instantaneous output torque of the engine is disposed on the output shaft of the engine, and the output signal thereof is frequency-analyzed to extract a half synchronous frequency component having a frequency equals to a half of the number of the revolutions of the engine per second and a synchronous frequency component having a frequency equals to the number of the revolutions of the engine per second, the electronic control unit (ECU) of the engine determines the misfiring mode of the engine including the number of the misfiring cylinders and the interval thereof in the firing order of the engine based on the amplitude of the frequency components and the waveform thereof, then the ECU determines the misfiring cylinders based on the determined misfiring mode and the phase angle of the frequency components of the torque sensor relative to a reference crank angle signal.
摘要翻译： 可以检测发动机的瞬时输出转矩的扭矩传感器设置在发动机的输出轴上，并对其输出信号进行频率分析，以提取频率等于该数量的一半的频率的半同步频率分量 发动机每秒的转速和频率等于发动机每秒转数的同步频率分量，发动机的电子控制单元（ECU）确定发动机的点火模式，包括失火次数 气缸及其间隔根据频率分量的振幅及其波形而发动机的点火顺序，则ECU根据确定的失火模式和扭矩传感器的频率分量的相位角来确定发动机气缸 相对于参考曲柄角信号。
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公开(公告)号：US5062062A
公开(公告)日：1991-10-29
申请号：US460235
申请日：1989-12-29
申请人： Yuji Nishibe , Yutaka Nonomura , Masaaki Abe , Masaharu Takeuchi , Kouji Tsukada
发明人： Yuji Nishibe , Yutaka Nonomura , Masaaki Abe , Masaharu Takeuchi , Kouji Tsukada
CPC分类号： G01L3/102 , G01D3/022 , G01D3/0365 , G01L3/105
摘要： A physical quantity detecting apparatus for detecting a physical quantity of an object of measurement. The position of movement of an object of measurement is divided into a given number of segments in advance. The output of a physical quantity sensor for detecting a physical quantity of the object of measurement is calculated on the basis of a correction operation expression which has an independent coefficient group for each segment so as to correct the offset component and the sensitivity. Thus, a physical quantity such as a transmitted torque is detected with high accuracy at real time without being influenced by the fluctuations of the offset output and the sensitivity depending on the position of rotation. The correction operation may also be performed using the temperature dependence function of the offset signal and the temperature dependence function of the sensitivity, thereby enabling the accurate measurement of the physical quantity without the influence of the temperature change.
摘要翻译： 一种用于检测测量对象的物理量的物理量检测装置。 将测量对象的移动位置预先分为给定数量的段。 基于对每个段具有独立系数组的校正运算表达式来计算用于检测测量对象的物理量的物理量传感器的输出，以便校正偏移分量和灵敏度。 因此，实时地高精度地检测诸如传输转矩的物理量，而不受偏移输出的波动和根据旋转位置的灵敏度的影响。 还可以使用偏移信号的温度依赖函数和灵敏度的温度依赖函数来执行校正操作，从而能够在不受温度变化的影响的情况下精确地测量物理量。
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公开(公告)号：US08610414B2
公开(公告)日：2013-12-17
申请号：US13125247
申请日：2009-10-21
申请人： Hiroo Fuma , Yuji Nishibe , Kota Manabe , Nobuyuki Kitamura
发明人： Hiroo Fuma , Yuji Nishibe , Kota Manabe , Nobuyuki Kitamura
IPC分类号： G05F1/40
CPC分类号： H02M3/1584
摘要： An object is to miniaturize booster coils used in a vehicle-mounted booster converter. In the design method for a vehicle-mounted multi-phase converter including multiple booster coils and a switching circuit for generating an induced electromotive force at each booster coil by switching of current flowing to each booster coil for applying an output voltage, based on an input voltage and the induced electromotive force generated at each booster coil, to a vehicle drive circuit, a coupling factor indicating the extent by which the induced electromotive force in one of multiple booster coils contributes to the voltage between terminals of another booster coil is determined on the basis of a relationship between the coupling factor and current ripple component of each booster coil.
摘要翻译： 目的在于使用在车载升压转换器中的升压线圈小型化。 在包括多个升压线圈的车载多相转换器的设计方法中，以及用于通过切换流过每个升压线圈以提供输出电压的电流来产生每个升压线圈处的感应电动势的开关电路， 电压和在每个升压线圈处产生的感应电动势到车辆驱动电路，耦合因子表示多个升压线圈中的一个中的感应电动势对另一个升压线圈的端子之间的电压有贡献的程度， 每个增压线圈的耦合因子和电流纹波分量之间的关系的基础。
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7.发明授权
公开(公告)号：US5838154A
公开(公告)日：1998-11-17
申请号：US615954
申请日：1996-03-14
申请人： Takeshi Morikawa , Yuji Nishibe , Hideya Yamadera , Yutaka Nonomura , Masaharu Takeuchi , Jiro Sakata
发明人： Takeshi Morikawa , Yuji Nishibe , Hideya Yamadera , Yutaka Nonomura , Masaharu Takeuchi , Jiro Sakata
CPC分类号： G01R33/02
摘要： A magnetic sensor element 1 includes a substrate 10, a conductive layer 12 of a conductive material, and a magnetic layer 11 of a magnetic material, which encloses the conductive layer 12. AC is applied to the element from a drive power source 50, and a detector 60 detects an impedance change due to an external magnetic field. The magnetic layer 11 is bestowed with magnetic anisotropy in a direction orthogonal to the direction of energization of the element 1. With the provision of the conductive layer 12 of conductive material and also with magnetic anisotropy imparted to the magnetic layer 1, the element 1 may be made a low resistivity element. A reactance change and a resistance change of the element due to an external magnetic field change, thus can be effectively detected in drive frequencies two orders of magnitude lower than in the case of a prior art magnetic sensor element. The magnetic anisotropy of the magnetic layer 11 is controlled to prevent magnetic field detection dynamic range variations with drive frequency.
摘要翻译： 磁传感器元件1包括衬底10，导电材料的导电层12和磁性材料的磁性层11，其包围导电层12.AC从驱动电源50施加到元件，并且 检测器60检测由外部磁场引起的阻抗变化。 磁性层11在与元件1的通电方向正交的方向上具有磁各向异性。通过提供导电材料的导电层12以及赋予磁性层1的磁各向异性，元件1可以 制成低电阻率元件。 由于外部磁场变化引起的元件的电抗变化和电阻变化，因此可以在比现有技术的磁性传感器元件的情况下低两个数量级的驱动频率中被有效地检测。 控制磁性层11的磁各向异性以防止磁场检测与驱动频率的动态范围变化。
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公开(公告)号：US4811609A
公开(公告)日：1989-03-14
申请号：US192621
申请日：1988-05-11
申请人： Yuji Nishibe , Yutaka Nonomura , Masaharu Takeuchi
发明人： Yuji Nishibe , Yutaka Nonomura , Masaharu Takeuchi
摘要： A torque detecting apparatus for measuring the amount of magnetostriction of a rotary magnetic material which transmits torque by means of a magnetic sensor, and detecting the transmitted torque on the basis of the measured amount of magnetostriction. The apparatus comprises a magnetic sensor for measuring the amount of magnetostriction of the rotary magnetic material, a demagnetization coil which is opposed to the rotary magnetic material so as to restore the rotary magnetic material magnetized by a disturbing magnetic field to the state of zero magnetization, a demagnetization circuit for applying an oscillating current to the demagnetization coil so as to generate in the rotary magnetic material a periodic damping oscillating magnetic field having the maximum value larger than the coercive force of the rotary magnetic material; and a trigger circuit for outputting a drive timing signal for the demagnetization circuit. The transmitted torque is detected without being influenced by a disturbing magnetic field.
摘要翻译： 一种扭矩检测装置，用于测量通过磁传感器传递扭矩的旋转磁性材料的磁致伸缩量，并且基于测量的磁致伸缩量来检测传递的扭矩。 该装置包括用于测量旋转磁性材料的磁致伸缩量的磁传感器，与旋转磁性材料相对的去磁线圈，以将由干扰磁场磁化的旋转磁性材料恢复到零磁化的状态， 用于向所述去磁线圈施加振荡电流以在所述旋转磁性材料中产生具有大于所述旋转磁性材料的矫顽力的最大值的周期性阻尼振荡磁场的去磁电路; 以及用于输出用于去磁电路的驱动定时信号的触发电路。 在不受干扰磁场影响的情况下检测发送的转矩。
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公开(公告)号：US4803885A
公开(公告)日：1989-02-14
申请号：US39390
申请日：1987-04-17
IPC分类号： G01L3/10
摘要： A torque measuring apparatus including a magnetic detection device for non-contact measuring strains in a rotating shaft of ferromagnetic material which is adapted to transmit torques, the detected strains being used to determine the levels of transmitted torques, the magnetic detection device including an exciting coil device wound around the outer periphery of the rotating shaft and adapted to magnetize the rotating shaft in its axial direction; a detecting core ring device in the form of an integral unit which includes a plurality of detecting cores arranged around the circumferential area of the rotating shaft to be magnetized equidistantly to form a ring, each of the detecting cores forming an independent magnetic circuit between the detecting core and the rotating shaft; and at least one magnetic detecting element for detecting a variable magnetic flux in each of the detecting cores depending on the level of the transmitted torque; whereby the strains in the rotating shaft can be non-contact measured based on the sum of detection signals from the magnetic sensors each of which is formed by each of the detecting cores and the corresponding magnetic detecting elements.
摘要翻译： 一种扭矩测量装置，包括用于在铁磁材料的旋转轴中的非接触测量应变的磁性检测装置，其适于传递扭矩，所检测的应变用于确定传递扭矩的水平，所述磁性检测装置包括励磁线圈 所述装置缠绕在所述旋转轴的外周上并且适于在所述旋转轴的轴向方向上使所述旋转轴磁化; 形成一体化单元的检测铁芯环装置，其包括多个检测芯，其布置在旋转轴的圆周区域周围等间隔地磁化以形成环，每个检测芯在检测之间形成独立的磁路 芯和旋转轴; 以及至少一个磁检测元件，用于根据传递转矩的水平检测每个检测铁芯中的可变磁通量; 由此可以根据来自磁传感器的检测信号的总和来测量旋转轴中的应变，每个检测信号由每个检测芯和相应的磁检测元件形成。
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公开(公告)号：US08933483B2
公开(公告)日：2015-01-13
申请号：US14074212
申请日：2013-11-07
申请人： Hidefumi Takaya , Kimimori Hamada , Yuji Nishibe
发明人： Hidefumi Takaya , Kimimori Hamada , Yuji Nishibe
CPC分类号： H01L29/7815 , H01L29/0653 , H01L29/0873 , H01L29/0878 , H01L29/0886 , H01L29/1095
摘要： Provided is a semiconductor device capable of reducing a temperature-dependent variation of a current sense ratio and accurately detecting current In the semiconductor device, at least one of an impurity concentration and a thickness of each semiconductor layer is adjusted such that a value calculated by a following equation is less than a predetermined value: [ ∑ i = 1 n ( R Mi × k Mi ) - ∑ i = 1 n ( R Si × k Si ) ] / ∑ i = 1 n ( R Mi × k Mi ) where a temperature-dependent resistance changing rate of an i-th semiconductor layer (i=1 to n) of the main element domain is RMi; a resistance ratio of the i-th semiconductor layer of the main element domain relative to the entire main element domain is kMi; a temperature-dependent resistance changing rate of the i-th semiconductor layer of the sense element domain is RSi; and a resistance ratio of the i-th semiconductor layer of the sense element domain to the entire sense element domain is kSi.
摘要翻译： 提供了能够降低电流感测比的温度变化并精确检测电流的半导体器件。在半导体器件中，调整每个半导体层的杂质浓度和厚度中的至少一个，使得通过a 以下等式小于预定值：[Σi = 1 n（R Mi×k Mi） - Σi = 1 n（R Si×k Si）] /Σi = 1 n（R Mi×k Mi）其中主要元素域的第i个半导体层（i = 1至n）的温度依赖性电阻变化率为RMi; 主元件区域的第i个半导体层相对于整个主要元件区域的电阻比为kMi; 感测元件畴的第i个半导体层的温度依赖性电阻变化率为RSi; 并且感测元件畴的第i个半导体层与整个感测元件畴的电阻比为kSi。
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