公开(公告)号：US09287587B2

公开(公告)日：2016-03-15

申请号：US13012528

申请日：2011-01-24

申请人： Katsunori Suzuki ,  Yukio Takasaki ,  Sho Matsumoto

发明人： Katsunori Suzuki ,  Yukio Takasaki ,  Sho Matsumoto

IPC分类号： H01M2/12 ,  H01M10/0587 ,  H01M10/052

CPC分类号： H01M10/0587 ,  H01M2/1241 ,  H01M2/1247 ,  H01M10/052 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011 ,  Y10T29/4911

摘要： A sealed battery cell including an anti-explosion mechanism disposed between an electrode group and a top cover, and that deforms or cleaves due to elevation of internal pressure in the battery cell, the electrode group being comprised of a positive electrode and a negative electrode that are laminated together; wherein the anti-explosion mechanism includes a diaphragm, a connection plate welded to the diaphragm, and a connection lead welded to the connection plate; and the connection plate includes a thinner portion where a spot at which the connection lead is connected is formed as thin, and a thicker portion where the thinner portion is not formed, and a lower surface of the thinner portion is formed as coincident with a lower surface of the thicker portion, or as hollowed out from the lower surface of the thicker portion.

摘要翻译： 一种密封的电池单元，包括设置在电极组和顶盖之间的防爆机构，并且由于电池单元内部压力升高而变形或断裂，所述电极组由正极和负极构成， 层压在一起; 其中所述防爆机构包括隔膜，焊接到所述隔膜的连接板和焊接到所述连接板的连接引线; 并且连接板包括较薄部分，其中连接引线连接的点形成为较薄部分，较薄部分形成较薄部分，并且较薄部分的下表面形成为与较低部分重合 较厚部分的表面，或从较厚部分的下表面挖出。

公开(公告)号：US20080272685A1

公开(公告)日：2008-11-06

申请号：US12081738

申请日：2008-04-21

申请人： Mitsuharu Ikeda ,  Toshiaki Kusunoki ,  Etsuko Nishimura ,  Tatsumi Hirano ,  Masatomo Terakado ,  Takahiro Ueno ,  Hiroyasu Yanase ,  Yukio Takasaki ,  Takaaki Ogasa ,  Hideyuki Shintani

发明人： Mitsuharu Ikeda ,  Toshiaki Kusunoki ,  Etsuko Nishimura ,  Tatsumi Hirano ,  Masatomo Terakado ,  Takahiro Ueno ,  Hiroyasu Yanase ,  Yukio Takasaki ,  Takaaki Ogasa ,  Hideyuki Shintani

IPC分类号： H01J1/54 ,  H05K1/09

CPC分类号： G02F1/136286 ,  G02F2001/13629

摘要： Hillock is prevented when aluminum wiring is used in order to reduce line resistance in a display unit. The aluminum wiring is formed into multi-layer structure and each layer contains an element which is not solidly solubilized with aluminum. The element are preferably rare earth metal such as Nd, high-melting point transition metals such as Ta and noble metals such as Pd. Intermetallic compounds of aluminum and the element are educed at an interface of the multi-layer wiring and it is prevented that grains of aluminum are enlarged to form hillock.

摘要翻译： 为了减少显示单元中的线路电阻，使用铝接线时会阻止小丘。 铝布线形成多层结构，每一层都含有不能用铝固溶的元素。 该元素优选为稀土金属如Nd，高熔点过渡金属如Ta和贵金属如Pd。 铝和元素的金属间化合物在多层布线的界面处被引出，并且防止铝的晶粒扩大以形成小丘。

公开(公告)号：US20070155140A1

公开(公告)日：2007-07-05

申请号：US11711623

申请日：2007-02-28

申请人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

发明人： Mutsuko Hatano ,  Mikio Hongo ,  Akio Yazaki ,  Mitsuharu Tai ,  Takeshi Noda ,  Yukio Takasaki

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02691 ,  C30B1/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)

公开(公告)号：US20070001593A1

公开(公告)日：2007-01-04

申请号：US11472397

申请日：2006-06-22

申请人： Masakazu Sagawa ,  Hiroshi Kikuchi ,  Yukio Takasaki ,  Tomoki Nakamura ,  Toshiaki Kusunoki ,  Kazutaka Tsuji

发明人： Masakazu Sagawa ,  Hiroshi Kikuchi ,  Yukio Takasaki ,  Tomoki Nakamura ,  Toshiaki Kusunoki ,  Kazutaka Tsuji

IPC分类号： H01J1/62

CPC分类号： H01J1/72 ,  H01J9/02 ,  H01J29/04 ,  H01J31/127

摘要： The present invention provides an image display device, in which a top electrode is selectively separated by laser ablation for each scan line. As the laser, a third harmonic wave of YAG laser with a wavelength of 355 nm is used. By setting film thickness of the interlayer insulator 15 to 100 nm and film thickness of a field insulator 14 to 140 nm, reflective spectrum has the minimum value near a wavelength of 355 nm, This laser beam is projected from a top electrode 13 toward a substrate 10. A part of the projected laser beam 20 is reflected by the top electrode 13, but most of the laser beam pass through a field insulator 14 and the interlayer insulator 15 and is reflected by a bottom electrode 11. As the result of interference of these two reflection waves, the minimum value appears in reflection spectrum. In this case, the laser beam is mostly absorbed near boundary surface between the top electrode 13 and the interlayer insulator 15. The top electrode 13 is processed by ablation (melting and evaporation), and the top electrode 13 is separated at this portion. By utilizing interference phenomenon in this manner, no damage is given to the interlayer insulator 13, the field insulator 14, and the bottom electrode 11, which serve as underlying layers, and the top electrode 13 can be selectively cut off.

摘要翻译： 本发明提供一种图像显示装置，其中通过每个扫描线的激光烧蚀选择性地分离顶部电极。 作为激光器，使用波长为355nm的YAG激光器的三次谐波。 通过将层间绝缘体15的膜厚设定为100nm，将场绝缘体14的膜厚设定为140nm，反射光的波长为355nm附近的最小值。该激光从顶部电极13朝向基板 10。 投射的激光束20的一部分被顶部电极13反射，但大多数激光束通过场绝缘体14和层间绝缘体15并由底部电极11反射。 作为这两个反射波的干扰的结果，最小值出现在反射光谱中。 在这种情况下，激光束主要在顶部电极13和层间绝缘体15之间的边界面附近被吸收。 顶部电极13通过消融（熔化和蒸发）进行处理，顶部电极13在该部分分离。 通过以这种方式利用干涉现象，不会对作为下层的层间绝缘体13，场绝缘体14和底电极11以及顶电极13进行选择性地切断。

公开(公告)号：US20050051081A1

公开(公告)日：2005-03-10

申请号：US10942911

申请日：2004-09-17

申请人： Kazuo Takeda ,  Masakazu Saito ,  Yukio Takasaki ,  Hironobu Abe ,  Makoto Ohkura ,  Yoshinobu Kimura ,  Takeo Shiba

发明人： Kazuo Takeda ,  Masakazu Saito ,  Yukio Takasaki ,  Hironobu Abe ,  Makoto Ohkura ,  Yoshinobu Kimura ,  Takeo Shiba

IPC分类号： G02F1/1368 ,  C30B13/00 ,  H01L21/20 ,  H01L21/336 ,  H01L21/477 ,  H01L21/66 ,  H01L29/786 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/6675 ,  H01L29/78672

摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

摘要翻译： 本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。 根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

公开(公告)号：US06806099B2

公开(公告)日：2004-10-19

申请号：US10059203

申请日：2002-01-31

申请人： Kazuo Takeda ,  Masakazu Saito ,  Yukio Takasaki ,  Hironobu Abe ,  Makoto Ohkura ,  Yoshinobu Kimura ,  Takeo Shiba

发明人： Kazuo Takeda ,  Masakazu Saito ,  Yukio Takasaki ,  Hironobu Abe ,  Makoto Ohkura ,  Yoshinobu Kimura ,  Takeo Shiba

IPC分类号： G01R3126

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/6675 ,  H01L29/78672

摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irraditation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

摘要翻译： 本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置的硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。 根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

公开(公告)号：US5757356A

公开(公告)日：1998-05-26

申请号：US654016

申请日：1996-05-28

申请人： Yukio Takasaki ,  Takashi Imamura

发明人： Yukio Takasaki ,  Takashi Imamura

IPC分类号： G05B11/01 ,  G05B19/10 ,  G05B23/02 ,  G05D23/19 ,  G06F3/023 ,  G06F3/033 ,  G06F3/048 ,  G09G5/36

CPC分类号： G06F3/0488 ,  G05B19/106 ,  G06F3/023 ,  G06F3/04847

摘要： An input data display device makes it easier to input properly correlated relative corrections for a number of parameters. Relative amounts by which each of a number of parameters is to be adjusted can be displayed on the screen in a manner which shows their ranges and possible correlation. The data are input when the operator touches spots which he selects on the display screen. The pressure of his finger causes data to be generated which represent those input positions. A calculation device calculates output-ready relative correction values for the various parameters based on these input position data. These values are transmitted to the connected device.

摘要翻译： 输入数据显示装置使得对于多个参数更容易输入正确相关的相对校正。 可以以显示其范围和可能的相关性的方式在屏幕上显示用于调整多个参数中的每一个的相对量。 当操作员触摸他在显示屏上选择的点时，输入数据。 他的手指的压力导致产生代表这些输入位置的数据。 计算装置基于这些输入位置数据计算各种参数的输出就绪相对校正值。 这些值被传输到连接的设备。

公开(公告)号：US5504813A

公开(公告)日：1996-04-02

申请号：US500743

申请日：1995-07-11

申请人： Yukio Takasaki

发明人： Yukio Takasaki

IPC分类号： H04Q7/32 ,  H04M1/02 ,  H04M1/03 ,  H04M1/00

CPC分类号： H04M1/0216 ,  H04M1/03

摘要： A small-sized, lightweight portable telephone has a microphone mounted on a rotatable arm that can be released into a use position using only one hand, which is also grasping the telephone. Even if an excessive load is applied to the microphone arm, which is rotatably supported relative to the telephone main member, damage is prevented by a spring-loaded detent mechanism. The microphone arm has built in it a core member formed of a shape-memory alloy and constituted by a flexible casing, so that deformation can occur without permanent damage to the arm.

摘要翻译： 一个小尺寸，轻便的便携式电话机具有安装在可旋转臂上的麦克风，该麦克风可以仅使用一只手来释放到使用位置，该手也抓住电话。 即使对相对于电话主体可旋转地支撑的麦克风臂施加过大的负载，也可以通过弹簧加载的止动机构来防止损坏。 麦克风臂内置有由形状记忆合金构成并由柔性壳体构成的芯构件，从而可以发生变形而不会对臂造成永久性损坏。

公开(公告)号：US4952839A

公开(公告)日：1990-08-28

申请号：US420773

申请日：1989-10-12

申请人： Kenkichi Tanioka ,  Mitsuo Kosugi ,  Junichi Yamazaki ,  Keiichi Shidara ,  Kazuhisa Taketoshi ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yochizumi Ikeda ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

发明人： Kenkichi Tanioka ,  Mitsuo Kosugi ,  Junichi Yamazaki ,  Keiichi Shidara ,  Kazuhisa Taketoshi ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yochizumi Ikeda ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

IPC分类号： H01J29/45

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

公开(公告)号：US4888521A

公开(公告)日：1989-12-19

申请号：US69156

申请日：1987-07-02

申请人： Kenkichi Tanioka ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Junichi Yamazaki ,  Eikyuu Hiruma ,  Kazuhisa Taketoshi ,  Shiro Suzuki ,  Takashi Yamashita ,  Mitsuo Kosugi ,  Yochizumi Ikeda ,  Masaaki Aiba ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

发明人： Kenkichi Tanioka ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Junichi Yamazaki ,  Eikyuu Hiruma ,  Kazuhisa Taketoshi ,  Shiro Suzuki ,  Takashi Yamashita ,  Mitsuo Kosugi ,  Yochizumi Ikeda ,  Masaaki Aiba ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

IPC分类号： H01J29/45 ,  H01J31/38

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非​​晶半导体层。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。