公开(公告)号：US08853086B2

公开(公告)日：2014-10-07

申请号：US13469048

申请日：2012-05-10

Applicant: Yuriy Melnik ,  Lu Chen ,  Hidehiro Kojiri

Inventor： Yuriy Melnik ,  Lu Chen ,  Hidehiro Kojiri

IPC: H01L21/311 ,  H01L21/02 ,  H01L33/00

CPC classification number: H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/007

Abstract: Embodiments of the present disclosure relate to methods for pretreatment of substrates and group III-nitride layers for manufacturing devices such as light emitting diodes (LEDs), laser diodes (LDs) or power electronic devices. One embodiment of the present disclosure provides a method including providing one or more substrates having an aluminum containing surface in a processing chamber and exposing a surface of each of the one or more substrates having an aluminum containing surface to a pretreatment gas mixture to form a pretreated surface. The pretreatment gas mixture includes ammonia (NH3), an aluminum halide gas (e.g., AlCl3, AlCl) and an etchant containing gas that includes a halogen gas (e.g., Cl2) or hydrogen halide gas (e.g., HCl).

Abstract translation: 本公开的实施例涉及用于制造诸如发光二极管（LED），激光二极管（LD）或功率电子器件的器件的衬底和III族氮化物层的预处理的方法。 本公开的一个实施方案提供了一种方法，包括在处理室中提供具有含铝表面的一个或多个基材，并将具有含铝表面的一个或多个基材中的每一个的表面暴露于预处理气体混合物以形成预处理 表面。 预处理气体混合物包括氨（NH 3），卤化铝气体（例如AlCl 3，AlCl）和含有卤素气体（例如Cl 2）或卤化氢气体（例如HCl）的含蚀刻剂的气体。

公开(公告)号：US20110263111A1

公开(公告)日：2011-10-27

申请号：US13071215

申请日：2011-03-24

Applicant: Yuriy Melnik ,  Olga Kryliouk ,  Lu Chen ,  Hidehiro Kojiri ,  Tetsuya Ishikawa

Inventor： Yuriy Melnik ,  Olga Kryliouk ,  Lu Chen ,  Hidehiro Kojiri ,  Tetsuya Ishikawa

IPC: H01L21/22 ,  C30B35/00 ,  C23C16/44 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/2233 ,  C23C16/30 ,  C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/007 ,  H01L33/325

Abstract: Group III-nitride N-type doping techniques are described.

Abstract translation: 描述了III族氮化物N型掺杂技术。

公开(公告)号：US20100258052A1

公开(公告)日：2010-10-14

申请号：US12637028

申请日：2009-12-14

Applicant: TETSUYA ISHIKAWA ,  DAVID H. QUACH ,  ANZHONG CHANG ,  OLGA KRYLIOUK ,  YURIY MELNIK ,  HARSUKHDEEP S. RATIA ,  SON T. NGUYEN ,  LILY PANG

Inventor： TETSUYA ISHIKAWA ,  DAVID H. QUACH ,  ANZHONG CHANG ,  OLGA KRYLIOUK ,  YURIY MELNIK ,  HARSUKHDEEP S. RATIA ,  SON T. NGUYEN ,  LILY PANG

IPC: C23C16/00

CPC classification number: C30B29/403 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/46 ,  C30B25/02 ,  C30B29/406 ,  Y10T137/479 ,  Y10T137/4807 ,  Y10T137/4824 ,  Y10T137/7504 ,  Y10T137/8376

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract translation: 本文公开的实施例通常涉及HVPE室。 腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。 不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

公开(公告)号：US20080314311A1

公开(公告)日：2008-12-25

申请号：US11767520

申请日：2007-06-24

Applicant: Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Jacob Grayson ,  Kenric T. Choi ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Yuriy Melnik

Inventor： Brian H. Burrows ,  Alexander Tam ,  Ronald Stevens ,  Jacob Grayson ,  Kenric T. Choi ,  Sumedh Acharya ,  Sandeep Nijhawan ,  Olga Kryliouk ,  Yuriy Melnik

IPC: C30B25/14 ,  C23C16/34

CPC classification number: C23C16/4488 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C30B25/14 ,  C30B29/403 ,  Y10T117/10

Abstract: A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.

Abstract translation: 提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。 第一组通道可以引入含金属的前体气体。 第二组通道可以提供含氮前体气体。 第一组和第二组通道可以散布，以分离含金属的前体气体和含氮前体气体，直到它们到达基底。 惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

公开(公告)号：US08568529B2

公开(公告)日：2013-10-29

申请号：US12637019

申请日：2009-12-14

Applicant: Tetsuya Ishikawa ,  David H. Quach ,  Anzhong Chang ,  Olga Kryliouk ,  Yuriy Melnik ,  Harsukhdeep S. Ratia ,  Son T. Nguyen ,  Lily Pang

Inventor： Tetsuya Ishikawa ,  David H. Quach ,  Anzhong Chang ,  Olga Kryliouk ,  Yuriy Melnik ,  Harsukhdeep S. Ratia ,  Son T. Nguyen ,  Lily Pang

IPC: C30B21/02

CPC classification number: C30B29/403 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/46 ,  C30B25/02 ,  C30B29/406 ,  Y10T137/479 ,  Y10T137/4807 ,  Y10T137/4824 ,  Y10T137/7504 ,  Y10T137/8376

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract translation: 本文公开的实施例通常涉及HVPE室。 腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。 不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

公开(公告)号：US08491720B2

公开(公告)日：2013-07-23

申请号：US12637028

申请日：2009-12-14

Applicant: Tetsuya Ishikawa ,  David H. Quach ,  Anzhong Chang ,  Olga Kryliouk ,  Yuriy Melnik ,  Harsukhdeep S. Ratia ,  Son T. Nguyen ,  Lily Pang

Inventor： Tetsuya Ishikawa ,  David H. Quach ,  Anzhong Chang ,  Olga Kryliouk ,  Yuriy Melnik ,  Harsukhdeep S. Ratia ,  Son T. Nguyen ,  Lily Pang

IPC: C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C22/02

CPC classification number: C30B29/403 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/46 ,  C30B25/02 ,  C30B29/406 ,  Y10T137/479 ,  Y10T137/4807 ,  Y10T137/4824 ,  Y10T137/7504 ,  Y10T137/8376

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract translation: 本文公开的实施例通常涉及HVPE室。 腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。 不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

公开(公告)号：US20120318457A1

公开(公告)日：2012-12-20

申请号：US13525203

申请日：2012-06-15

Applicant: Son Nguyen ,  Donald Olgado ,  Yuriy Melnik

Inventor： Son Nguyen ,  Donald Olgado ,  Yuriy Melnik

IPC: B05B1/18 ,  C23C16/455 ,  H01L21/306

CPC classification number: C23C16/45565 ,  C23C16/4404 ,  C30B25/14 ,  C30B29/403

Abstract: Apparatus and systems are disclosed for providing a protective material for a showerhead of a processing system. In an embodiment, a processing system includes a processing chamber for processing substrates and a showerhead having a diffuser plate for distributing processing gases to the processing chamber. The diffuser plate may include a protective material to protect the showerhead from processing gases. The diffuser plate may be formed with tungsten or tungsten coated with a tantalum alloy and tantalum.

Abstract translation: 公开了用于提供用于处理系统的喷头的保护材料的装置和系统。 在一个实施例中，处理系统包括用于处理基板的处理室和具有用于将处理气体分配到处理室的扩散板的喷头。 漫射板可以包括保护材料以保护喷头免于处理气体。 漫射板可以由涂有钽合金和钽的钨或钨形成。

公开(公告)号：US20120295418A1

公开(公告)日：2012-11-22

申请号：US13469050

申请日：2012-05-10

Applicant: Yuriy Melnik ,  Lu Chen ,  Hidehiro Kojiri

Inventor： Yuriy Melnik ,  Lu Chen ,  Hidehiro Kojiri

IPC: H01L21/205

CPC classification number: H01L21/02304 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/872

Abstract: Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

Abstract translation: 公开了用于生长具有先进的多缓冲层技术的高结晶质量III族氮化物外延层的方法。 在一个实施例中，一种方法包括在氢化物气相外延处理系统的处理室中形成在合适的衬底上含有铝的III族氮化物缓冲层。 在沉积缓冲层期间，卤化氢或卤素气体流入生长区以抑制均匀的颗粒形成。 可以使用含有铝的低温缓冲液（例如AlN，AlGaN）和含有铝的高温缓冲液（例如AlN，AlGaN）的一些组合来改善随后生长的III族氮化物外延层的晶体质量和形态。 缓冲液可以沉积在衬底上，或者沉积在另一缓冲液的表面上。 附加的缓冲层可以作为III族氮化物层（例如，GaN，AlGaN，AlN）中的中间层添加。

公开(公告)号：US08138069B2

公开(公告)日：2012-03-20

申请号：US12766779

申请日：2010-04-23

Applicant: Yuriy Melnik ,  Olga Kryliouk ,  Hidehiro Kojiri ,  Tetsuya Ishikawa

Inventor： Yuriy Melnik ,  Olga Kryliouk ,  Hidehiro Kojiri ,  Tetsuya Ishikawa

IPC: H01L21/20

CPC classification number: H01L21/02658 ,  C23C16/0272 ,  C23C16/301 ,  C30B25/186 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254

Abstract: Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.

Abstract translation: 本发明的实施例涉及用于制造诸如发光二极管（LED）或激光二极管（LD）的器件的衬底的预处理的设备和方法。 本发明的一个实施方案包括通过将含氧化铝的衬底的表面暴露于预处理气体混合物来预处理含氧化铝的衬底，其中预处理气体混合物包含氨（NH 3）和卤素气体。

公开(公告)号：US08080466B2

公开(公告)日：2011-12-20

申请号：US12853409

申请日：2010-08-10

Applicant: Jie Su ,  Olga Kryliouk ,  Yuriy Melnik

Inventor： Jie Su ,  Olga Kryliouk ,  Yuriy Melnik

IPC: H01L21/36

CPC classification number: H01L21/02516 ,  C23C16/303 ,  C23C16/4411 ,  C23C16/4488 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/54 ,  C30B25/02 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/16

Abstract: Embodiments described herein generally relate to apparatus and methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and hydride vapor phase epitaxial (HVPE) processes. In one embodiment, a method for fabricating a nitrogen-face (N-face) polarity compound nitride semiconductor device is provided. The method comprises depositing a nitrogen containing buffer layer having N-face polarity over one or more substrates using a metal organic chemical vapor deposition (MOCVD) process to form one or more substrates having N-face polarity and depositing a gallium nitride (GaN) layer over the nitrogen containing buffer layer using a hydride vapor phase epitaxial (HVPE) deposition process, wherein the nitrogen containing buffer layer and the GaN layer are formed without breaking vacuum and exposing the one or more substrates to atmosphere.

Abstract translation: 本文描述的实施方案通常涉及通过金属 - 有机化学气相沉积（MOCVD）工艺和氢化物气相外延（HVPE）工艺形成III-V族材料的装置和方法。 在一个实施例中，提供了一种用于制造氮 - 面（N面）极性复合氮化物半导体器件的方法。 该方法包括使用金属有机化学气相沉积（MOCVD）工艺在一个或多个衬底上沉积具有N面极性的含氮缓冲层，以形成具有N面极性的一个或多个衬底并沉积氮化镓（GaN）层 使用氢化物​​气相外延（HVPE）沉积工艺在含氮缓冲层上方，其中形成含氮缓冲层和GaN层，而不破坏真空并将一个或多个衬底暴露于大气中。