公开(公告)号：US08903340B2

公开(公告)日：2014-12-02

申请号：US13169699

申请日：2011-06-27

申请人： Yuyu Chang ,  Hooman Darabi

发明人： Yuyu Chang ,  Hooman Darabi

IPC分类号： H03G3/34 ,  H03G3/30 ,  H04B1/10 ,  H03G11/02

CPC分类号： H04B1/109 ,  H03G3/3052 ,  H03G3/345 ,  H03G11/02

摘要： Embodiments of a radio frequency (RF) receiver implementing one or more forms of protection to protect devices of the RF receiver from in-band interferers is provided. The RF receiver includes an integrated circuit terminal configured to couple a RF signal received at an antenna to a RF signal path, and a low noise amplifier (LNA) coupled to the RF signal path and configured to amplify the RF signal to provide an amplified RF signal. To protect the LNA from in-band interferers, the RF receiver can further include one or more clamping circuits and/or an over-voltage detector to determine if a peak of the RF signal exceeds an acceptable level.

摘要翻译： 提供了实现一种或多种形式的保护的射频（RF）接收机的实施例，以保护RF接收机的设备免受带内干扰。 RF接收机包括被配置为将在天线处接收的RF信号耦合到RF信号路径的集成电路终端和耦合到RF信号路径的低噪声放大器（LNA），并被配置为放大RF信号以提供放大RF 信号。 为了保护LNA免受带内干扰，RF接收机还可包括一个或多个钳位电路和/或过电压检测器，以确定RF信号的峰值是否超过可接受的电平。

公开(公告)号：US08410823B2

公开(公告)日：2013-04-02

申请号：US11619803

申请日：2007-01-04

申请人： Yuyu Chang ,  Meng-An Pan

发明人： Yuyu Chang ,  Meng-An Pan

IPC分类号： H02M11/00 ,  H03F3/45

CPC分类号： H03F3/195 ,  H03F1/08 ,  H03F3/191 ,  H03F3/45475 ,  H03F2200/168 ,  H03F2200/451 ,  H03F2200/91 ,  H03F2203/45136

摘要： Aspects of a method and system for an integrated LC resonant current gain boosting amplifier may include amplifying within a chip, via an on-chip LC current gain circuit, an alternating current (AC) generated by an on-chip voltage-to-current converter, and converting within the chip, via an on-chip current-to-voltage circuit; the amplified alternating current to an output voltage. The on-chip LC current gain circuit comprises only passive components, which may include one or more resistors, one or more capacitors, and one or more inductors.

摘要翻译： 用于集成LC谐振电流增益升压放大器的方法和系统的方面可以包括通过片上LC电流增益电路在芯片内放大由片上电压 - 电流转换器产生的交流（AC） ，并通过片上电流 - 电压电路在芯片内转换; 放大的交流电流达到输出电压。 片上LC电流增益电路仅包括无源部件，其可以包括一个或多个电阻器，一个或多个电容器和一个或多个电感器。

公开(公告)号：US20120329418A1

公开(公告)日：2012-12-27

申请号：US13169681

申请日：2011-06-27

申请人： Yuyu Chang ,  Hooman Darabi

发明人： Yuyu Chang ,  Hooman Darabi

IPC分类号： H04B1/10

CPC分类号： H03F1/52 ,  H03F3/195 ,  H03F3/45475 ,  H03F2200/294 ,  H03F2200/444 ,  H03F2200/453 ,  H03F2200/78

摘要： Embodiments of a radio frequency (RF) receiver implementing one or more forms of protection to protect devices of the RF receiver from in-band interferers is provided. The RF receiver includes an integrated circuit terminal configured to couple a RF signal received at an antenna to a RF signal path, and a low noise amplifier (LNA) coupled to the RF signal path and configured to amplify the RF signal to provide an amplified RF signal. To protect the LNA from in-band interferers, the RF receiver can further include one or more clamping circuits and/or an over-voltage detector to determine if a peak of the RF signal exceeds an acceptable level.

摘要翻译： 提供了实现一种或多种形式的保护的射频（RF）接收机的实施例，以保护RF接收机的设备免受带内干扰。 RF接收机包括被配置为将在天线处接收的RF信号耦合到RF信号路径的集成电路终端和耦合到RF信号路径的低噪声放大器（LNA），并被配置为放大RF信号以提供放大RF 信号。 为了保护LNA免受带内干扰，RF接收机还可包括一个或多个钳位电路和/或过电压检测器，以确定RF信号的峰值是否超过可接受的电平。

公开(公告)号：US20100317311A1

公开(公告)日：2010-12-16

申请号：US12481702

申请日：2009-06-10

申请人： Ahmad MIRZAEI ,  Hooman DARABI ,  Yuyu CHANG

发明人： Ahmad MIRZAEI ,  Hooman DARABI ,  Yuyu CHANG

IPC分类号： H04B1/10

CPC分类号： H04B1/1036 ,  H03H19/008

摘要： Embodiments of a SAW-less RF receiver front-end that includes a frequency translated notch filter (FTNF) are presented. An FTNF includes a passive mixer and a baseband impedance. The baseband impedance includes capacitors that form a low-Q band-stop filter. The passive mixer is configured to translate the baseband impedance to a higher frequency. The translated baseband impedance forms a high-Q notch filter and is presented at the input of the FTNF. The FTNF can be fully integrated in CMOS IC technology (or others, e.g., Bipolar, BiCMOS, and SiGe) and applied in wireless receiver systems including GSM, EDGE, Wideband Code Division Multiple Access (WCDMA), Bluetooth, and wireless LANs (e.g., IEEE 802.11). In addition, embodiments of an apparatus to protect SAW-less RF receiver front-ends are presented.

摘要翻译： 提供了包括频率转换陷波滤波器（FTNF）的无SAW无RF接收机前端的实施例。 FTNF包括无源混频器和基带阻抗。 基带阻抗包括形成低Q带阻滤波器的电容器。 无源混频器被配置为将基带阻抗转换到更高的频率。 经翻译的基带阻抗形成高Q陷波滤波器，并呈现在FTNF的输入端。 FTNF可以完全集成到CMOS IC技术（或其他，例如双极，BiCMOS和SiGe）中，并应用于无线接收机系统，包括GSM，EDGE，宽带码分多址（WCDMA），蓝牙和无线局域网（例如 ，IEEE 802.11）。 另外，还提出了用于保护无SAW射频接收器前端的装置的实施例。

公开(公告)号：US07671685B2

公开(公告)日：2010-03-02

申请号：US11694266

申请日：2007-03-30

申请人： Yuyu Chang

发明人： Yuyu Chang

IPC分类号： H03F3/04

CPC分类号： H03F3/193 ,  H03F1/223 ,  H03F1/26 ,  H03F3/45179 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2203/45166 ,  H03F2203/45668 ,  H03F2203/45704

摘要： Aspects of a method and system for a low power fully differential noise canceling low noise amplifier (NC LNA) are provided. The NC LNA may receive signals via a single ended input and may generate an amplified symmetric differential output from the received signals. The NC LNA may utilize capacitor dividers, such as a capacitor bank, in the single ended input in order to provide impedance transformation that enables low power operation and matching to an input port. The NC LNA may generate one portion of the amplified symmetric differential output via a voltage divider, which may comprise a plurality of capacitors, such as a capacitor bank. The NC LNA may be implemented utilizing one or more circuits.

摘要翻译： 提供了低功耗全差分噪声消除低噪声放大器（NC LNA）的方法和系统的方面。 NC LNA可以经由单端输入接收信号，并且可以从接收到的信号产生放大的对称差分输出。 NC LNA可以在单端输入中使用诸如电容器组的电容器分配器，以便提供能够进行低功率操作和与输入端口匹配的阻抗变换。 NC LNA可以经由分压器产生放大的对称差分输出的一部分，分压器可以包括多个电容器，例如电容器组。 NC LNA可以利用一个或多个电路来实现。

公开(公告)号：US20090134942A1

公开(公告)日：2009-05-28

申请号：US11944723

申请日：2007-11-26

申请人： Yuyu Chang

发明人： Yuyu Chang

IPC分类号： H03F1/22

CPC分类号： H03F1/223 ,  H03F1/301 ,  H03F3/193 ,  H03F3/245 ,  H03F2200/108 ,  H03F2200/18 ,  H03F2200/27 ,  H03F2200/294 ,  H03F2200/447 ,  H03F2200/451 ,  H03F2200/456 ,  H03G1/0088

摘要： Radio frequency amplifier with constant gain setting. A circuitry that includes triple well connected MOSFETs is employed to eliminate body effects therein. The voltage gain as presented herein, being implemented using a ratio of certain elements within the circuitry, is immune to variations in temperature, power supply voltage, and process variations. One implementation employs an array of selectable MOSFETs to allow for more than one gain setting to be provided by the amplifier. Such an amplifier has a variable/selectable gain setting. An appropriately placed MOSFET is employed to provide the desired input impedance (e.g., 50Ω). This design can be implemented using multiple n-channel metal oxide semiconductor field-effect transistors (N-MOSFETs) (some of which are triple well connected) and p-channel metal oxide semiconductor field-effect transistors (P-MOSFETs), or alternatively using P-MOSFETs and N-MOSFETs.

摘要翻译： 具有恒定增益设置的射频放大器。 使用包括三阱连接的MOSFET的电路来消除其中的体效应。 使用电路内的某些元件的比率实现的本文所呈现的电压增益不受温度变化，电源电压和工艺变化的影响。 一个实现采用可选择的MOSFET阵列，以允许由放大器提供多于一个的增益设置。 这种放大器具有可变/可选择的增益设置。 使用适当放置的MOSFET来提供期望的输入阻抗（例如，50mega）。 该设计可以使用多个n沟道金属氧化物半导体场效应晶体管（N-MOSFET）（其中一些是三阱连接的）和p沟道金属氧化物半导体场效应晶体管（P-MOSFET）来实现，或者可选地 使用P-MOSFET和N-MOSFET。

公开(公告)号：US20090134932A1

公开(公告)日：2009-05-28

申请号：US11944715

申请日：2007-11-26

申请人： Yuyu Chang ,  Hooman Darabi

发明人： Yuyu Chang ,  Hooman Darabi

IPC分类号： G06G7/16

CPC分类号： G06G7/16 ,  H03D7/1441 ,  H03D7/1458 ,  H03D7/1466 ,  H03D2200/0084

摘要： Low flicker noise mixer and buffer. This design employs some native metal oxide semiconductor field-effect transistors (MOSFETs) (e.g., having no threshold voltage) within a passive mixer whose gates are driven using clock signals. These native MOSFETs maybe biased at one half of the power supply voltage to provide a lower noise figure. A cooperatively operating buffer employs appropriately places MOSFETs and resistors to ensure the desired gain. Relatively larger valued resistors can be employed to provide for higher voltage gain, and this can sometimes be accompanied with using a higher than typical power supply voltage. Source followers serve as output buffers and also ensure the required output DC voltage level as well. It is also noted that this design can be implemented using n-channel metal oxide semiconductor field-effect transistors (N-MOSFETs) of p-channel metal oxide semiconductor field-effect transistors (P-MOSFETs).

摘要翻译： 低闪烁噪声混频器和缓冲器。 该设计在无源混频器内采用一些本征金属氧化物半导体场效应晶体管（MOSFET）（例如，不具有阈值电压），其门的栅极使用时钟信号驱动。 这些原生MOSFET可能偏置在电源电压的一半处，以提供较低的噪声系数。 合作运行的缓冲器适当地放置MOSFET和电阻器以确保期望的增益。 可以采用相对较大值的电阻器来提供更高的电压增益，并且有时可以伴随使用高于典型的电源电压。 源跟随器用作输出缓冲器，并且还确保所需的输出直流电压电平。 还应注意，该设计可以使用p沟道金属氧化物半导体场效应晶体管（P-MOSFET）的n沟道金属氧化物半导体场效应晶体管（N-MOSFET）来实现。

公开(公告)号：US20080136463A1

公开(公告)日：2008-06-12

申请号：US11619803

申请日：2007-01-04

申请人： Yuyu Chang ,  Meng-An Pan

发明人： Yuyu Chang ,  Meng-An Pan

IPC分类号： H02M11/00 ,  H03G3/30

CPC分类号： H03F3/195 ,  H03F1/08 ,  H03F3/191 ,  H03F3/45475 ,  H03F2200/168 ,  H03F2200/451 ,  H03F2200/91 ,  H03F2203/45136

摘要： Aspects of a method and system for an integrated LC resonant current gain boosting amplifier may include amplifying within a chip, via an on-chip LC current gain circuit, an alternating current (AC) generated by an on-chip voltage-to-current converter, and converting within the chip, via an on-chip current-to-voltage circuit; the amplified alternating current to an output voltage. The on-chip LC current gain circuit comprises only passive components, which may include one or more resistors, one or more capacitors, and one or more inductors.

摘要翻译： 用于集成LC谐振电流增益升压放大器的方法和系统的方面可以包括通过片上LC电流增益电路在芯片内放大由片上电压 - 电流转换器产生的交流（AC） ，并通过片上电流 - 电压电路在芯片内转换; 放大的交流电流达到输出电压。 片上LC电流增益电路仅包括无源部件，其可以包括一个或多个电阻器，一个或多个电容器和一个或多个电感器。

公开(公告)号：US08374560B2

公开(公告)日：2013-02-12

申请号：US12882684

申请日：2010-09-15

申请人： Arya Behzad ,  Adedayo Ojo ,  Yuyu Chang ,  Hung-Ming Chien ,  Kishore Rama Rao ,  Guruprasad Seetharam

发明人： Arya Behzad ,  Adedayo Ojo ,  Yuyu Chang ,  Hung-Ming Chien ,  Kishore Rama Rao ,  Guruprasad Seetharam

IPC分类号： H04B1/04

CPC分类号： H04B1/06 ,  H04B1/0057 ,  H04B1/0082 ,  H04B7/084

摘要： Aspects of a method and system for processing signals in a high performance receive chain may include amplifying a plurality of radio frequency signals in one or more respective one or ones of a plurality of amplifier chains in a multistandard radio frequency front-end, which may comprise one or more shared processing stages. The plurality of radio frequency signals may be compliant with a plurality of radio frequency communication standards and may be received concurrently. The one or more shared processing stages may be shared between two or more of the plurality of amplifier chains. Each of the two or more of the plurality of amplifier chains may be operable to amplify signals compliant with different radio frequency communication standards.

摘要翻译： 用于处理高性能接收链中的信号的方法和系统的方面可以包括在多标准射频前端中的多个放大器链中的一个或多个相应的一个或多个放大器链中放大多个射频信号，其可以包括 一个或多个共享处理阶段。 多个射频信号可以符合多个射频通信标准，并且可以同时接收。 一个或多个共享处理级可以在多个放大器链中的两个或更多个之间共享。 多个放大器链中的两个或更多个放大器链中的每一个可以可操作以放大符合不同射频通信标准的信号。

公开(公告)号：US08369818B2

公开(公告)日：2013-02-05

申请号：US13169681

申请日：2011-06-27

申请人： Yuyu Chang ,  Hooman Darabi

发明人： Yuyu Chang ,  Hooman Darabi

IPC分类号： H04B1/16 ,  H03F3/45

CPC分类号： H03F1/52 ,  H03F3/195 ,  H03F3/45475 ,  H03F2200/294 ,  H03F2200/444 ,  H03F2200/453 ,  H03F2200/78

摘要： Embodiments of a radio frequency (RF) receiver implementing one or more forms of protection to protect devices of the RF receiver from in-band interferers is provided. The RF receiver includes an integrated circuit terminal configured to couple a RF signal received at an antenna to a RF signal path, and a low noise amplifier (LNA) coupled to the RF signal path and configured to amplify the RF signal to provide an amplified RF signal. To protect the LNA from in-band interferers, the RF receiver can further include one or more clamping circuits and/or an over-voltage detector to determine if a peak of the RF signal exceeds an acceptable level.

摘要翻译： 提供了实现一种或多种形式的保护的射频（RF）接收机的实施例，以保护RF接收机的设备免受带内干扰。 RF接收机包括被配置为将在天线处接收的RF信号耦合到RF信号路径的集成电路终端和耦合到RF信号路径的低噪声放大器（LNA），并被配置为放大RF信号以提供放大RF 信号。 为了保护LNA免受带内干扰，RF接收机还可包括一个或多个钳位电路和/或过电压检测器，以确定RF信号的峰值是否超过可接受的电平。