MULTILAYER PLANAR TUNABLE FILTER
    1.
    发明申请
    MULTILAYER PLANAR TUNABLE FILTER 有权
    多层次平面滤波器

    公开(公告)号:US20100214040A1

    公开(公告)日:2010-08-26

    申请号:US12392924

    申请日:2009-02-25

    IPC分类号: H01P1/203

    CPC分类号: H01P1/20345

    摘要: An electronic device includes a first strip conductor formed from a first metal level over a substrate. A second strip conductor formed from a second metal level is located between the first strip conductor and the substrate. At least one of the first and the second strip conductors includes a stripline portion and a microstrip line portion.

    摘要翻译: 电子器件包括由衬底上的第一金属层形成的第一条状导体。 由第二金属层形成的第二带状导体位于第一带状导体和基底之间。 第一和第二带状导体中的至少一个包括带状线部分和微带线部分。

    Multilayer planar tunable filter
    3.
    发明授权
    Multilayer planar tunable filter 有权
    多层平面可调滤波器

    公开(公告)号:US08081050B2

    公开(公告)日:2011-12-20

    申请号:US12392924

    申请日:2009-02-25

    IPC分类号: H01P3/08

    CPC分类号: H01P1/20345

    摘要: An electronic device includes a first strip conductor formed from a first metal level over a substrate. A second strip conductor formed from a second metal level is located between the first strip conductor and the substrate. At least one of the first and the second strip conductors includes a stripline portion and a microstrip line portion.

    摘要翻译: 电子器件包括由衬底上的第一金属层形成的第一条状导体。 由第二金属层形成的第二带状导体位于第一带状导体和基底之间。 第一和第二带状导体中的至少一个包括带状线部分和微带线部分。

    POWER AMPLIFIER WITH LOW NOISE FIGURE AND VOLTAGE VARIABLE GAIN
    4.
    发明申请
    POWER AMPLIFIER WITH LOW NOISE FIGURE AND VOLTAGE VARIABLE GAIN 有权
    低噪声功率放大器和电压可变增益

    公开(公告)号:US20130093520A1

    公开(公告)日:2013-04-18

    申请号:US13641789

    申请日:2011-04-18

    IPC分类号: H03G3/00 H03F1/22

    摘要: The object of the present invention is a low noise figure amplifier with a variable gain which comprises a cascode amplification stage comprising, serially mounted, a low-voltage MOSFET transistor installed as a common source followed by a bipolar transistor with high breakdown voltage installed as a common base. A resistor is placed between the bipolar transistor's collector and the grid of the cascode stage's MOSFET transistor, and the cascode stage is electrically powered through a choke.

    摘要翻译: 本发明的目的是具有可变增益的低噪声系数放大器,其包括串联放大级,其包括串联安装的低压MOSFET晶体管,其安装为公共源,随后是具有高击穿电压的双极晶体管,安装为 共同基地。 在双极晶体管的集电极和共源共栅级的MOSFET晶体管的栅格之间放置一个电阻,并且共源共栅级通过扼流圈电力供电。

    Area efficient inductors
    6.
    发明申请
    Area efficient inductors 审中-公开
    区域效率电感器

    公开(公告)号:US20060087394A1

    公开(公告)日:2006-04-27

    申请号:US10955590

    申请日:2004-09-30

    IPC分类号: H01F5/00

    摘要: An apparatus includes a spiral conductor, a first electronic device, and a second electronic device. The spiral conductor has first and second ends. The first end is a first port of the conductor. An intermediate portion of the conductor is a second port of the conductor. The second end is a third port of the conductor. The first electronic device has a first terminal connected to the first port and has a second terminal connected to the second port. The first electronic device is capable of carrying a current between the first and second terminals. The second electronic device has a third terminal that operates as a current source or sink. The third terminal is connected to the third port.

    摘要翻译: 一种装置包括螺旋导体,第一电子装置和第二电子装置。 螺旋导体具有第一和第二端。 第一端是导体的第一个端口。 导体的中间部分是导体的第二端口。 第二端是导体的第三个端口。 第一电子设备具有连接到第一端口的第一端子,并且具有连接到第二端口的第二端子。 第一电子装置能够在第一和第二端子之间承载电流。 第二电子设备具有作为电流源或接收器工作的第三端子。 第三个终端连接到第三个端口。

    Power amplifier with low noise figure and voltage variable gain
    9.
    发明授权
    Power amplifier with low noise figure and voltage variable gain 有权
    具有低噪声系数和电压可变增益的功率放大器

    公开(公告)号:US08928414B2

    公开(公告)日:2015-01-06

    申请号:US13641789

    申请日:2011-04-18

    IPC分类号: H03F3/04

    摘要: The object of the present invention is a low noise figure amplifier with a variable gain which comprises a cascode amplification stage comprising, serially mounted, a low-voltage MOSFET transistor installed as a common source followed by a bipolar transistor with high breakdown voltage installed as a common base. A resistor is placed between the bipolar transistor's collector and the grid of the cascode stage's MOSFET transistor, and the cascode stage is electrically powered through a choke.

    摘要翻译: 本发明的目的是具有可变增益的低噪声系数放大器,其包括串联放大级,其包括串联安装的低压MOSFET晶体管,其安装为公共源,随后是具有高击穿电压的双极晶体管,安装为 共同基地。 在双极晶体管的集电极和共源共栅级的MOSFET晶体管的栅格之间放置一个电阻,并且共源共栅级通过扼流圈电力供电。