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    ANALYSIS OF PATTERN FEATURES
    2.
    发明申请
    ANALYSIS OF PATTERN FEATURES 审中-公开
    模式特征分析

    公开(公告)号：US20140014621A1

    公开(公告)日：2014-01-16

    申请号：US13798130

    申请日：2013-03-13

    申请人： Zhaoning Yu ,  Nobuo Kurataka ,  Gennady Gauzner

    发明人： Zhaoning Yu ,  Nobuo Kurataka ,  Gennady Gauzner

    IPC分类号： B05C21/00

    CPC分类号： G03F7/0002 ,  C09K13/00 ,  G03F7/40 ,  G11B5/746 ,  G11B5/855

    摘要： The embodiments disclose a method for an electron curing reverse-tone process, including depositing an etch-resistant layer onto a patterned imprinted resist layer fabricated onto a hard mask layer deposited onto a substrate, curing the etch-resistant layer using an electron beam dose during etching processes of imprinted pattern features into the hard mask and into the substrate and using analytical processes to quantify reduced pattern feature placement drift errors and to quantify increased pattern feature size uniformity of imprinted pattern features etched.

    摘要翻译： 实施方案公开了一种用于电子固化反相色调工艺的方法，包括将沉积抗蚀刻层的图案印刷的抗蚀剂层沉积在沉积在基底上的硬掩模层上，使用电子束剂量固化耐蚀刻层 将印刷图案特征蚀刻到硬掩模中并进入基底，并使用分析过程来量化减少的图案特征位移漂移误差并量化蚀刻的印记图案特征的增加的图案特征尺寸均匀性。

    Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures
    5.
    发明授权
    Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures 失效
    形成单晶金属硅化物纳米线和所得纳米线结构的方法

    公开(公告)号：US07829050B2

    公开(公告)日：2010-11-09

    申请号：US11707601

    申请日：2007-02-13

    申请人： Zhaoning Yu ,  Zhiyong Li ,  Wei Wu ,  Shih-Yuan Wang ,  R. Stanley Williams

    发明人： Zhaoning Yu ,  Zhiyong Li ,  Wei Wu ,  Shih-Yuan Wang ,  R. Stanley Williams

    IPC分类号： C01B21/068

    CPC分类号： C30B29/10 ,  C30B29/60

    摘要： Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline-metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.

    摘要翻译： 本发明的各种实施方案涉及形成单晶金属硅化物纳米线和所得纳米线结构的方法。 在本发明的一个实施例中，公开了一种制造纳米线的方法。 在该方法中，形成许多纳米线前体部件。 每个纳米线前体构件包括基本单晶硅区域和多晶金属区域。 每个纳米线前体部件的大致单晶硅区域和多晶金属区域反应形成对应的基本单晶金属硅化物纳米线。 在本发明的另一个实施方案中，公开了一种纳米线结构。 纳米线结构包括具有电绝缘层的衬底。 大量单晶金属硅化物纳米线位于电绝缘层上。

    Optical gratings, lithography tools including such optical gratings and methods for using same for alignment
    7.
    发明授权
    Optical gratings, lithography tools including such optical gratings and methods for using same for alignment 失效
    光栅，包括这种光栅的光刻工具和用于对准的方法

    公开(公告)号：US07612882B2

    公开(公告)日：2009-11-03

    申请号：US11584461

    申请日：2006-10-20

    申请人： Wei Wu ,  Warren Robinett ,  Shih-Yuan Wang ,  Jun Gao ,  Zhaoning Yu

    发明人： Wei Wu ,  Warren Robinett ,  Shih-Yuan Wang ,  Jun Gao ,  Zhaoning Yu

    IPC分类号： G01B11/00 ,  G01B11/14

    CPC分类号： G03F9/7049 ,  G03F9/7003

    摘要： Lithography tools and substrates are aligned by generating geometric interference patterns using optical gratings associated with the lithography tools and substrates. In some embodiments, the relative position between a substrate and lithography tool is adjusted to cause at least one geometric shape to have a predetermined size or shape representing acceptable alignment. In additional embodiments, Moiré patterns that exhibit varying sensitivity are used to align substrates and lithography tools. Furthermore, lithography tools and substrates are aligned by causing radiation to interact with optical gratings positioned between the lithography tools and substrates. Lithography tools include an optical grating configured to generate a portion of an interference pattern that exhibits a sensitivity that increases as the relative position between the tools and a substrate moves towards a predetermined alignment position.

    摘要翻译： 通过使用与光刻工具和衬底相关的光栅产生几何干涉图案来对准平版印刷工具和衬底。 在一些实施例中，调整衬底和光刻工具之间的相对位置以使得至少一个几何形状具有表示可接受对准的预定尺寸或形状。 在另外的实施例中，使用呈现不同灵敏度的莫尔图案来对准衬底和光刻工具。 此外，光刻工具和衬底通过使辐射与位于光刻工具和衬底之间的光栅相互作用来对准。 平版印刷工具包括光栅，其被配置为产生表现出灵敏度的一部分干涉图案，该灵敏度随着工具和基板之间的相对位置朝向预定对准位置移动而增加。

    Surface enhanced raman spectroscopy with periodically deformed SERS-active structure
    8.
    发明授权
    Surface enhanced raman spectroscopy with periodically deformed SERS-active structure 有权
    具有周期性变形的SERS活性结构的表面增强拉曼光谱

    公开(公告)号：US07609377B2

    公开(公告)日：2009-10-27

    申请号：US11796455

    申请日：2007-04-26

    申请人： Wei Wu ,  Zhiyong Li ,  Shih-Yuan Wang ,  Zhaoning Yu ,  R. Stanley Williams

    发明人： Wei Wu ,  Zhiyong Li ,  Shih-Yuan Wang ,  Zhaoning Yu ,  R. Stanley Williams

    IPC分类号： G01J3/44

    CPC分类号： G01N21/658

    摘要： An apparatus and related methods for facilitating surface-enhanced Raman spectroscopy (SERS) is described. A SERS-active structure near which a plurality of analyte molecules is disposed is periodically deformed at an actuation frequency. A synchronous measuring device synchronized with the actuation frequency receives Raman radiation scattered from the analyte molecules and generates therefrom at least one Raman signal measurement.

    摘要翻译： 描述了用于促进表面增强拉曼光谱（SERS）的装置和相关方法。 多个分析物分子附近的SERS-活性结构以致动频率周期性地变形。 与致动频率同步的同步测量装置接收从分析物分子散射的拉曼辐射，并由此产生至少一个拉曼信号测量。

    Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures
    9.
    发明申请
    Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures 失效
    形成单晶金属硅化物纳米线和所得纳米线结构的方法

    公开(公告)号：US20080193359A1

    公开(公告)日：2008-08-14

    申请号：US11707601

    申请日：2007-02-13

    申请人： Zhaoning Yu ,  Zhiyong Li ,  Wei Wu ,  Shih-Yuan Wang ,  R. Stanley Williams

    发明人： Zhaoning Yu ,  Zhiyong Li ,  Wei Wu ,  Shih-Yuan Wang ,  R. Stanley Williams

    IPC分类号： C01B21/068

    CPC分类号： C30B29/10 ,  C30B29/60

    摘要： Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline- metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.

    摘要翻译： 本发明的各种实施方案涉及形成单晶金属硅化物纳米线和所得纳米线结构的方法。 在本发明的一个实施例中，公开了一种制造纳米线的方法。 在该方法中，形成许多纳米线前体部件。 每个纳米线前体构件包括大致单晶硅区域和多晶金属区域。 每个纳米线前体部件的大致单晶硅区域和多晶金属区域反应形成对应的基本单晶金属硅化物纳米线。 在本发明的另一个实施方案中，公开了一种纳米线结构。 纳米线结构包括具有电绝缘层的衬底。 大量单晶金属硅化物纳米线位于电绝缘层上。

    Patterning methods
    10.
    发明申请
    Patterning methods 审中-公开
    图案化方法

    公开(公告)号：US20080108224A1

    公开(公告)日：2008-05-08

    申请号：US11546663

    申请日：2006-10-12

    申请人： Zhaoning Yu

    发明人： Zhaoning Yu

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31144 ,  B82Y10/00 ,  H01L21/31111

    摘要： A patterning method includes providing a substrate having an insulator layer established thereon. A silicon layer is established on the insulator layer. A mask is established on at least a portion of the silicon layer. Portions of the silicon layer and the insulator layer are removed to expose portions of the substrate, whereby the silicon layer and insulator layer covered by the mask remain on the substrate. The insulator layer is wet-etched at exposed areas, whereby a height of the insulator layer remains substantially unchanged. The mask and remaining silicon layer are removed.

    摘要翻译： 图案化方法包括提供其上建立有绝缘体层的衬底。 在绝缘体层上建立硅层。 在硅层的至少一部分上建立掩模。 除去硅层和绝缘体层的部分以暴露衬底的部分，由此被掩模覆盖的硅层和绝缘体层保留在衬底上。 绝缘体层在暴露的区域被湿蚀刻，由此绝缘体层的高度基本保持不变。 去除掩模和剩余的硅层。