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    Multi-station plasma reactor with multiple plasma regions
    1.
    发明授权
    Multi-station plasma reactor with multiple plasma regions 有权
    具有多个等离子体区域的多工位等离子体反应器

    公开(公告)号：US08336488B2

    公开(公告)日：2012-12-25

    申请号：US11961718

    申请日：2007-12-20

    申请人： Aihua Chen ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

    发明人： Aihua Chen ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

    IPC分类号： C23C16/505

    CPC分类号： C23C16/54 ,  C23C16/36 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

    摘要： A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

    摘要翻译： 等离子体室被构造成具有在其中限定多个处理站的室主体。 多个旋转基板保持器各自位于一个处理站中，并且多个原位等离子体产生区域分别设置在一个基板保持器的上方。 多个准远程等离子体产生区域分别设置在相应的原位等离子体产生区域的上方并与相应的原位等离子体产生区域气态连通。 RF能量源耦合到准远程等离子体产生区域中的每一个。

    MULTI-STATION PLASMA REACTOR WITH MULTIPLE PLASMA REGIONS
    2.
    发明申请
    MULTI-STATION PLASMA REACTOR WITH MULTIPLE PLASMA REGIONS 有权
    多级等离子体反应器与多个等离子体区域

    公开(公告)号：US20090139453A1

    公开(公告)日：2009-06-04

    申请号：US11961718

    申请日：2007-12-20

    申请人： AIHUA CHEN ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

    发明人： AIHUA CHEN ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

    IPC分类号： C23C16/505

    CPC分类号： C23C16/54 ,  C23C16/36 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

    摘要： A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

    摘要翻译： 等离子体室被构造成具有在其中限定多个处理站的室主体。 多个旋转基板保持器各自位于一个处理站中，并且多个原位等离子体产生区域分别设置在一个基板保持器的上方。 多个准远程等离子体产生区域分别设置在相应的原位等离子体产生区域的上方并与相应的原位等离子体产生区域气态连通。 RF能量源耦合到准远程等离子体产生区域中的每一个。

    Gas distribution assembly for use in a semiconductor work piece processing reactor
    3.
    发明授权
    Gas distribution assembly for use in a semiconductor work piece processing reactor 有权
    用于半导体工件处理反应器的气体分配组件

    公开(公告)号：US07658800B2

    公开(公告)日：2010-02-09

    申请号：US11602568

    申请日：2006-11-20

    申请人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

    发明人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： C23C16/45565 ,  C23C16/45574

    摘要： A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

    摘要翻译： 描述了半导体工件处理反应器，其包括限定沉积区域的处理室; 基座，其在所述处理室的所述沉积区域内支撑并移动待处理的半导体工件; 以及气体分配组件，其安装在所述处理室内并且限定彼此分离的第一和第二反应气体通道，并且将两个反应气体输送到位于所述气体分配组件附近的半导体工件。

    Gas distribution assembly for use in a semiconductor work piece processing reactor
    4.
    发明申请
    Gas distribution assembly for use in a semiconductor work piece processing reactor 有权
    用于半导体工件处理反应器的气体分配组件

    公开(公告)号：US20080092815A1

    公开(公告)日：2008-04-24

    申请号：US11602568

    申请日：2006-11-20

    申请人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

    发明人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

    IPC分类号： C23F1/00 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/45574

    摘要： A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

    摘要翻译： 描述了半导体工件处理反应器，其包括限定沉积区域的处理室; 基座，其在所述处理室的所述沉积区域内支撑并移动待处理的半导体工件; 以及气体分配组件，其安装在处理室内并且限定彼此分离的第一和第二反应气体通道，并将两个反应气体输送到位于气体分配组件附近的半导体工件。

    Multi-zone resistive heater
    5.
    发明授权
    Multi-zone resistive heater 有权

    公开(公告)号：US06423949B1

    公开(公告)日：2002-07-23

    申请号：US09314845

    申请日：1999-05-19

    申请人： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

    发明人： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

    IPC分类号： H05B368

    CPC分类号： H01L21/67103

    摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

    Multi-zone resistive heater
    6.
    发明授权
    Multi-zone resistive heater 失效

    公开(公告)号：US06646235B2

    公开(公告)日：2003-11-11

    申请号：US10037151

    申请日：2001-10-19

    申请人： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

    发明人： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

    IPC分类号： H05B368

    CPC分类号： H01L21/67103

    摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

    High temperature resistive heater for a process chamber
    7.
    发明授权
    High temperature resistive heater for a process chamber 失效
    用于处理室的高温电阻加热器

    公开(公告)号：US6066836A

    公开(公告)日：2000-05-23

    申请号：US717780

    申请日：1996-09-23

    申请人： Steven Aihua Chen ,  Henry Ho ,  Mei Chang ,  Ming Xi ,  Chen-An Chen ,  Chiliang Chen

    发明人： Steven Aihua Chen ,  Henry Ho ,  Mei Chang ,  Ming Xi ,  Chen-An Chen ,  Chiliang Chen

    IPC分类号： C23C16/46 ,  F27D99/00 ,  F27B5/14 ,  C23C16/00

    CPC分类号： F27D99/0006 ,  C23C16/46 ,  F27D2099/0008

    摘要： A resistive heating structure for a processing apparatus such as a chemical vapor deposition chamber. The system includes a resistive heating substrate holder including a support surface and a support shaft, the holder being comprised of a first material. The support surface includes a resistive heating element. The support shaft has a given length, and through bores for allowing a thermocouple to engage the support surface and electrical conductors to couple to the resistive heating element in the support surface. A metallic mounting structure is coupled to the support shaft and secured to the process apparatus to create a sealed environment within the holder and mounting structure to protect the electrical leads and thermocouple from the process environment.

    摘要翻译： 用于诸如化学气相沉积室的处理装置的电阻加热结构。 该系统包括电阻加热衬底保持器，其包括支撑表面和支撑轴，该保持器由第一材料构成。 支撑表面包括电阻加热元件。 支撑轴具有给定的长度，并且通过孔允许热电偶接合支撑表面和电导体以耦合到支撑表面中的电阻加热元件。 金属安装结构联接到支撑轴并固定到处理装置以在保持器和安装结构内形成密封环境，以保护电引线和热电偶免受过程环境的影响。

    Heater temperature uniformity qualification tool
    9.
    发明授权
    Heater temperature uniformity qualification tool 有权
    加热器温度均匀性鉴定工具

    公开(公告)号：US06500266B1

    公开(公告)日：2002-12-31

    申请号：US09484483

    申请日：2000-01-18

    申请人： Henry Ho ,  Alexander M. Rubinchik ,  Aihua Chen ,  Abril C. Cabreros ,  Steven T. Li ,  Mark Yam ,  Bruce W. Peuse

    发明人： Henry Ho ,  Alexander M. Rubinchik ,  Aihua Chen ,  Abril C. Cabreros ,  Steven T. Li ,  Mark Yam ,  Bruce W. Peuse

    IPC分类号： C23C1600

    CPC分类号： H01L21/67248 ,  H01L21/67103

    摘要： An apparatus of a reactor or processing chamber comprising a chamber having a resistive heater disposed within a volume of the chamber, including a stage having a surface area to support a substrate such as a wafer and a body including at least one heating element, a shaft coupled to the body, a plurality of temperature sensors coupled to the chamber, each configured to measure a temperature at separate points associated with the surface area of the stage, and a motor coupled to the shaft and configured to rotate the resistive heater about an axis through the shaft. In this manner, the temperature sensors may measure a temperature at separate points of the surface area of the stage. A method of rotating a shaft and measuring a plurality of temperatures over the surface area of the stage or over a wafer seated on the stage with the plurality of temperature sensors.

    摘要翻译： 一种反应器或处理室的装置，包括具有设置在室的体积内的电阻加热器的室，包括具有支撑诸如晶片的基板和包括至少一个加热元件的主体的表面积的台， 耦合到所述主体的多个温度传感器，每个温度传感器被配置成测量与所述平台的表面区域相关联的分离点处的温度;以及电动机，其联接到所述轴并被配置为围绕轴旋转所述电阻加热器 通过轴。 以这种方式，温度传感器可以在台的表面区域的分开的点处测量温度。 一种使多个温度传感器旋转并且在台面的表面积上或在与台座上的晶片上测量多个温度的方法。