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    Multi-station plasma reactor with multiple plasma regions
    1.
    发明授权
    Multi-station plasma reactor with multiple plasma regions 有权
    具有多个等离子体区域的多工位等离子体反应器

    公开(公告)号：US08336488B2

    公开(公告)日：2012-12-25

    申请号：US11961718

    申请日：2007-12-20

    申请人： Aihua Chen ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

    发明人： Aihua Chen ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

    IPC分类号： C23C16/505

    CPC分类号： C23C16/54 ,  C23C16/36 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

    摘要： A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

    摘要翻译： 等离子体室被构造成具有在其中限定多个处理站的室主体。 多个旋转基板保持器各自位于一个处理站中，并且多个原位等离子体产生区域分别设置在一个基板保持器的上方。 多个准远程等离子体产生区域分别设置在相应的原位等离子体产生区域的上方并与相应的原位等离子体产生区域气态连通。 RF能量源耦合到准远程等离子体产生区域中的每一个。

    MULTI-STATION PLASMA REACTOR WITH MULTIPLE PLASMA REGIONS
    2.
    发明申请
    MULTI-STATION PLASMA REACTOR WITH MULTIPLE PLASMA REGIONS 有权
    多级等离子体反应器与多个等离子体区域

    公开(公告)号：US20090139453A1

    公开(公告)日：2009-06-04

    申请号：US11961718

    申请日：2007-12-20

    申请人： AIHUA CHEN ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

    发明人： AIHUA CHEN ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

    IPC分类号： C23C16/505

    CPC分类号： C23C16/54 ,  C23C16/36 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

    摘要： A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

    摘要翻译： 等离子体室被构造成具有在其中限定多个处理站的室主体。 多个旋转基板保持器各自位于一个处理站中，并且多个原位等离子体产生区域分别设置在一个基板保持器的上方。 多个准远程等离子体产生区域分别设置在相应的原位等离子体产生区域的上方并与相应的原位等离子体产生区域气态连通。 RF能量源耦合到准远程等离子体产生区域中的每一个。

    MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER
    3.
    发明申请
    MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER 有权
    多站解密反应离子室

    公开(公告)号：US20130008605A1

    公开(公告)日：2013-01-10

    申请号：US13620654

    申请日：2012-09-14

    申请人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    发明人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    IPC分类号： H01L21/3065

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

    摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

    摘要翻译： 提供了具有等离子体隔离和频率隔离的串联处理区室。 对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以便提供去耦反应离子蚀刻能力。 室体在两个处理区之间周围和两者之间被磨碎。 使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。 等离子体约束环也用于防止等离子体串扰。 接地的公共排气路径连接到单个真空泵。

    CAPACITIVE CVD REACTOR AND METHODS FOR PLASMA CVD PROCESS
    6.
    发明申请
    CAPACITIVE CVD REACTOR AND METHODS FOR PLASMA CVD PROCESS 有权
    电解CVD反应器和等离子体CVD过程的方法

    公开(公告)号：US20100126667A1

    公开(公告)日：2010-05-27

    申请号：US12498295

    申请日：2009-07-06

    申请人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

    发明人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

    IPC分类号： C23F1/08 ,  C23C16/54

    CPC分类号： H01L21/68764 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/32091 ,  H01J2237/2001 ,  H01L21/68771

    摘要： A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.

    摘要翻译： 描述了去耦合的电容CVD反应器，其提供改进的CVD能力，包括在较低温度下处理，执行交替沉积和蚀刻步骤，以及执行腔室的原位清洁，而不需要远程等离子体源。 两个RF频率耦合到基座，而阳极接地。 操作高频RF源以控制等离子体密度，同时操作低频RF源以控制基板上的物质轰击，以便控制被沉积的膜的性质。 此外，可以控制两个RF源以及供应到腔室的气体的选择，以沉积模式，局部蚀刻模式，蚀刻模式或清洁模式来操作腔室。

    MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER
    7.
    发明申请
    MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER 有权
    多站解密反应离子室

    公开(公告)号：US20080011424A1

    公开(公告)日：2008-01-17

    申请号：US11772726

    申请日：2007-07-02

    申请人： Gerald YIN ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    发明人： Gerald YIN ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    IPC分类号： C23F1/00 ,  H05H1/00

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

    摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

    摘要翻译： 提供了具有等离子体隔离和频率隔离的串联处理区室。 对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以便提供去耦反应离子蚀刻能力。 室体在两个处理区之间周围和两者之间被磨碎。 使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。 等离子体约束环也用于防止等离子体串扰。 接地的公共排气路径连接到单个真空泵。

    Multi-station decoupled reactive ion etch chamber
    8.
    发明授权
    Multi-station decoupled reactive ion etch chamber 有权
    多工位去耦反应离子蚀刻室

    公开(公告)号：US09208998B2

    公开(公告)日：2015-12-08

    申请号：US13620654

    申请日：2012-09-14

    申请人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    发明人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    IPC分类号： H01J37/32 ,  H01L21/67

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

    摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

    摘要翻译： 提供了具有等离子体隔离和频率隔离的串联处理区室。 对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以提供去耦反应离子蚀刻能力。 室体在两个处理区之间周围和两者之间被磨碎。 使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。 等离子体约束环也用于防止等离子体串扰。 接地的公共排气路径连接到单个真空泵。

    Capacitive CVD reactor and methods for plasma CVD process
    9.
    发明授权
    Capacitive CVD reactor and methods for plasma CVD process 有权
    电容CVD反应器和等离子体CVD工艺的方法

    公开(公告)号：US08297225B2

    公开(公告)日：2012-10-30

    申请号：US12498295

    申请日：2009-07-06

    申请人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

    发明人： Gerald Yin ,  Jinyuan Chen ,  Tuqiang Ni

    IPC分类号： C23C16/54 ,  C23F1/08

    CPC分类号： H01L21/68764 ,  C23C16/4405 ,  C23C16/5096 ,  H01J37/32091 ,  H01J2237/2001 ,  H01L21/68771

    摘要： A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.

    摘要翻译： 描述了去耦合的电容CVD反应器，其提供改进的CVD能力，包括在较低温度下处理，执行交替沉积和蚀刻步骤，以及执行腔室的原位清洁，而不需要远程等离子体源。 两个RF频率耦合到基座，而阳极接地。 操作高频RF源以控制等离子体密度，同时操作低频RF源以控制基板上的物质轰击，以便控制被沉积的膜的性质。 此外，可以控制两个RF源以及供应到腔室的气体的选择，以沉积模式，局部蚀刻模式，蚀刻模式或清洁模式来操作腔室。