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公开(公告)号：US10073351B2
公开(公告)日：2018-09-11
申请号：US14964033
申请日：2015-12-09
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Rajiv Krishan Agarwal , Mark Richard Brown , Aiping Wu , David Barry Rennie , Yi-Chia Lee , Gene Everad Parris
CPC classification number: G03F7/425 , C11D7/261 , C11D7/265 , C11D7/267 , C11D7/3209 , C11D7/3218 , C11D7/3281 , C11D11/0047 , G03F7/423 , G03F7/426 , H01L21/02057 , H01L21/02334
Abstract: A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.
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公开(公告)号：US20160145102A1
公开(公告)日：2016-05-26
申请号：US15013224
申请日：2016-02-02
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Rajiv Krishan Agarwal , Sai-Hong Andrew Lo , Howard Paul Withers, JR. , Joseph T. Sluzevich , James Joseph Hart
IPC: C01B21/087 , B01J8/02 , B01J8/10 , B01J8/24 , B01J8/00
CPC classification number: C01B21/087 , B01J8/0015 , B01J8/02 , B01J8/10 , B01J8/24 , B01J2208/00761 , B01J2208/00823 , C01C1/164
Abstract: The method described herein provides a method for preparing trisilylamine. In one aspect, the method comprises: providing a reaction mixture of trisilylamine and monochlorosilane into a reactor wherein the reaction mixture is at a temperature and pressure sufficient to provide trisilylamine in a liquid phase wherein the reaction mixture is substantially free of an added solvent; contacting the reaction mixture with ammonia to provide a crude mixture comprising trisilylamine and an ammonium chloride solid wherein monochlorosilane is in stoichiometric excess in relation to ammonia; purifiying the crude mixture to provide trisilylamine wherein the trisilyamine is produced at purity level of 90% or greater; and optionally removing the ammonium chloride solid from the reactor.
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公开(公告)号：US09976111B2
公开(公告)日：2018-05-22
申请号：US15138835
申请日：2016-04-26
Applicant: Air Products and Chemicals, Inc.
Inventor： Wen Dar Liu , Yi-Chia Lee , William Jack Casteel, Jr. , Tianniu Chen , Rajiv Krishan Agarwal , Madhukar Bhaskara Rao
IPC: C11D7/26 , C11D11/00 , C11D3/39 , C11D3/43 , C11D3/30 , C11D3/20 , C11D3/33 , C11D3/28 , C11D3/00 , C11D3/37 , H01L21/311 , H01L21/033 , H01L21/768 , H01L21/02
CPC classification number: C11D11/0047 , C11D3/0073 , C11D3/2086 , C11D3/28 , C11D3/30 , C11D3/33 , C11D3/3773 , C11D3/3947 , C11D3/43 , H01L21/02068 , H01L21/0332 , H01L21/31111 , H01L21/31144 , H01L21/32134 , H01L21/76865
Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.
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公开(公告)号：US09284198B2
公开(公告)日：2016-03-15
申请号：US14284983
申请日：2014-05-22
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Rajiv Krishan Agarwal , Sai-Hong Andrew Lo , Howard Paul Withers, Jr. , Joseph T. Sluzevich , James Joseph Hart
IPC: C07F7/02 , C01C1/16 , C01B21/087
CPC classification number: C01B21/087 , B01J8/0015 , B01J8/02 , B01J8/10 , B01J8/24 , B01J2208/00761 , B01J2208/00823 , C01C1/164
Abstract: The method described herein provides a method for preparing trisilylamine. In one aspect, the method comprises: providing a reaction mixture of trisilylamine and monochlorosilane into a reactor wherein the reaction mixture is at a temperature and pressure sufficient to provide trisilylamine in a liquid phase wherein the reaction mixture is substantially free of an added solvent; contacting the reaction mixture with ammonia to provide a crude mixture comprising trisilylamine and an ammonium chloride solid wherein monochlorosilane is in stoichiometric excess in relation to ammonia; purifiying the crude mixture to provide trisilylamine wherein the trisilyamine is produced at purity level of 90% or greater; and optionally removing the ammonium chloride solid from the reactor.
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公开(公告)号：US20150004089A1
公开(公告)日：2015-01-01
申请号：US14284983
申请日：2014-05-22
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Rajiv Krishan Agarwal , Sai-Hong Andrew Lo , Howard Paul Withers, JR. , Joseph T. Sluzevich , James Joseph Hart
IPC: C01B33/04
CPC classification number: C01B21/087 , B01J8/0015 , B01J8/02 , B01J8/10 , B01J8/24 , B01J2208/00761 , B01J2208/00823 , C01C1/164
Abstract: The method described herein provides a method for preparing trisilylamine. In one aspect, the method comprises: providing a reaction mixture of trisilylamine and monochlorosilane into a reactor wherein the reaction mixture is at a temperature and pressure sufficient to provide trisilylamine in a liquid phase wherein the reaction mixture is substantially free of an added solvent; contacting the reaction mixture with ammonia to provide a crude mixture comprising trisilylamine and an ammonium chloride solid wherein monochlorosilane is in stoichiometric excess in relation to ammonia; purifiying the crude mixture to provide trisilylamine wherein the trisilyamine is produced at purity level of 90% or greater; and optionally removing the ammonium chloride solid from the reactor.
Abstract translation: 本文所述的方法提供了制备三甲胺的方法。 一方面，该方法包括：将三甲硅烷和一氯硅烷的反应混合物提供到反应器中，其中反应混合物处于足以提供液相中的三甲胺的温度和压力，其中反应混合物基本上不含加入的溶剂; 使反应混合物与氨接触以提供包含三甲胺和氯化铵固体的粗混合物，其中一氯硅烷相对于氨具有化学计量过量; 纯化粗混合物以提供三甲胺，其中三元胺的纯度为90％或更高; 并任选地从反应器中除去氯化铵固体。
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公开(公告)号：US20170107460A1
公开(公告)日：2017-04-20
申请号：US15138835
申请日：2016-04-26
Applicant: Air Products and Chemicals, Inc.
Inventor： Wen Dar Liu , Yi-Chia Lee , William Jack Casteel, JR. , Tianniu Chen , Rajiv Krishan Agarwal , Madhukar Bhaskara Rao
IPC: C11D11/00 , C11D3/43 , C11D3/30 , C11D3/20 , C11D3/33 , H01L21/02 , C11D3/00 , C11D3/37 , H01L21/311 , H01L21/033 , H01L21/768 , C11D3/39 , C11D3/28
CPC classification number: C11D11/0047 , C11D3/0073 , C11D3/2086 , C11D3/28 , C11D3/30 , C11D3/33 , C11D3/3773 , C11D3/3947 , C11D3/43 , H01L21/02068 , H01L21/0332 , H01L21/31111 , H01L21/31144 , H01L21/32134 , H01L21/76865
Abstract: Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.
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7.发明申请SYSTEM AND METHOD FOR TUNGSTEN HEXAFLUORIDE RECOVERY AND REUSE 审中-公开TUNGSTEN HEXAFLORORRON RECOVERY AND REUSE的系统和方法
公开(公告)号：US20140196664A1
公开(公告)日：2014-07-17
申请号：US14149318
申请日：2014-01-07
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Andrew David Johnson , Rajiv Krishan Agarwal , Heui-Bok Ahn , William Jack Casteel, JR. , Eugene Joseph Karwacki, JR. , John Francis Lehmann , David Charles Winchester
CPC classification number: H01L21/0262 , B01D53/002 , B01D53/68 , B01D2257/553 , B01D2258/0216 , C23C16/4401 , C23C16/4412
Abstract: Condensable materials, such as but not limited to tungsten fluoride (WF6), can be used deposit films in a chemical vapor deposition (CVD) process. Described herein are methods to collect and reuse the condensable materials that are unreacted in the production process rather than treat these materials as waste. In one embodiment, when a condensable material, such as gaseous WF6, is not supplied to the CVD reactor, it is redirected to a recovery cabinet for capture.
Abstract translation: 可以在化学气相沉积（CVD）工艺中使用可冷凝材料，例如但不限于氟化钨（WF 6），沉积膜。 这里描述的是收集和再利用在生产过程中未反应的可冷凝材料的方法，而不是将这些材料作为废物处理。 在一个实施方案中，当诸如气态WF6的可冷凝材料未被供应到CVD反应器时，其被重定向到用于捕获的回收箱。
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公开(公告)号：US09463978B2
公开(公告)日：2016-10-11
申请号：US15013224
申请日：2016-02-02
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Rajiv Krishan Agarwal , Sai-Hong Andrew Lo , Howard Paul Withers, Jr. , Joseph T. Sluzevich , James Joseph Hart
CPC classification number: C01B21/087 , B01J8/0015 , B01J8/02 , B01J8/10 , B01J8/24 , B01J2208/00761 , B01J2208/00823 , C01C1/164
Abstract: The method described herein provides a method for preparing trisilylamine. In one aspect, the method comprises: providing a reaction mixture of trisilylamine and monochlorosilane into a reactor wherein the reaction mixture is at a temperature and pressure sufficient to provide trisilylamine in a liquid phase wherein the reaction mixture is substantially free of an added solvent; contacting the reaction mixture with ammonia to provide a crude mixture comprising trisilylamine and an ammonium chloride solid wherein monochlorosilane is in stoichiometric excess in relation to ammonia; purifiying the crude mixture to provide trisilylamine wherein the trisilyamine is produced at purity level of 90% or greater; and optionally removing the ammonium chloride solid from the reactor.
Abstract translation: 本文所述的方法提供了制备三甲胺的方法。 一方面，该方法包括：将三甲硅烷和一氯硅烷的反应混合物提供到反应器中，其中反应混合物处于足以提供液相中的三甲胺的温度和压力，其中反应混合物基本上不含加入的溶剂; 使反应混合物与氨接触以提供包含三甲胺和氯化铵固体的粗混合物，其中一氯硅烷相对于氨具有化学计量过量; 纯化粗混合物以提供三甲胺，其中三元胺的纯度为90％或更高; 并任选地从反应器中除去氯化铵固体。
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9.发明申请Semi-Aqueous Photoresist or Semiconductor Manufacturing Residue Stripping and Cleaning Composition with Improved Silicon Passivation 审中-公开半水性光致抗蚀剂或半导体制造残留物剥离和清洁组合物，具有改进的硅钝化
公开(公告)号：US20160179011A1
公开(公告)日：2016-06-23
申请号：US14964033
申请日：2015-12-09
Applicant: AIR PRODUCTS AND CHEMICALS, INC.
Inventor： Rajiv Krishan Agarwal , Mark Richard Brown , Aiping Wu , David Barry Rennie , Yi-Chia Lee , Gene Everad Parris
CPC classification number: G03F7/425 , C11D7/261 , C11D7/265 , C11D7/267 , C11D7/3209 , C11D7/3218 , C11D7/3281 , C11D11/0047 , G03F7/423 , G03F7/426 , H01L21/02057 , H01L21/02334
Abstract: A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.
Abstract translation: 包含水，一种或多种碱性化合物，一种或多种腐蚀抑制剂和一种或多种抗氧化剂的一种或多种氧化产物的光致抗蚀剂或半导体制造残渣汽提和清洁组合物，制备组合物的方法和使用组合物的方法 。
