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1.发明授权公开(公告)号：US07189658B2
公开(公告)日：2007-03-13
申请号：US11123501
申请日：2005-05-04
申请人： Annamalai Lakshmanan , Deenesh Padhi , Ganesh Balasubramanian , Zhenjiang David Cui , Daemian Raj , Juan Carlos Rocha-Alvarez , Francimar Schmitt , Bok Hoen Kim
发明人： Annamalai Lakshmanan , Deenesh Padhi , Ganesh Balasubramanian , Zhenjiang David Cui , Daemian Raj , Juan Carlos Rocha-Alvarez , Francimar Schmitt , Bok Hoen Kim
IPC分类号： H01L21/31
CPC分类号： C23C16/029 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31633 , H01L21/76801 , H01L21/76829 , Y10S438/931
摘要： A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped up during the deposition of the transition layer such that the transition layer has a carbon concentration gradient and an oxygen concentration gradient. The transition layer improves the adhesion of the dielectric layer to an underlying barrier layer on the substrate.
摘要翻译： 提供了一种处理衬底的方法，包括在处理室中的衬底上沉积过渡层和电介质层。 过渡层由包括有机硅化合物和氧化气体的处理气体沉积。 在沉积过渡层期间，有机硅化合物的流速升高，使得过渡层具有碳浓度梯度和氧浓度梯度。 过渡层改善了介电层对基底上的下层阻挡层的粘合性。
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公开(公告)号：US09157151B2
公开(公告)日：2015-10-13
申请号：US11756358
申请日：2007-05-31
CPC分类号： C23C16/4405 , C23C16/401 , H01J37/32357 , H01J37/32862
摘要： The present invention generally provides an apparatus and method for eliminating the “first wafer effect” for plasma enhanced chemical vapor deposition (PECVD). One embodiment of the present invention provides a method for preparing a chamber after the chamber being idle for a period of time. The method comprises a cleaning step followed by a season step and a heating step adapted to the length of the idle time.
摘要翻译： 本发明通常提供一种用于消除等离子体增强化学气相沉积（PECVD）的“第一晶圆效应”的装置和方法。 本发明的一个实施例提供一种在腔室闲置一段时间之后制备腔室的方法。 该方法包括清洁步骤，随后是季节步骤和适应空闲时间长度的加热步骤。
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公开(公告)号：US20080050932A1
公开(公告)日：2008-02-28
申请号：US11508545
申请日：2006-08-23
申请人： Annamalai Lakshmanan , Vu NT Nguyen , Sohyun Park , Ganesh Balasubramanian , Steven Reiter , Tsutomu Kiyohara , Francimar Schmitt , Bok Hoen Kim
发明人： Annamalai Lakshmanan , Vu NT Nguyen , Sohyun Park , Ganesh Balasubramanian , Steven Reiter , Tsutomu Kiyohara , Francimar Schmitt , Bok Hoen Kim
IPC分类号： H01L21/473
CPC分类号： C23C16/4404 , C23C16/0245 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02315 , H01L21/3148 , H01L21/31612 , H01L21/31633 , H01L21/3185
摘要： The present invention generally provides an apparatus and method for reducing defects on films deposited on semiconductor substrates. One embodiment of the present invention provides a method for depositing a film on a substrate. The method comprises treating the substrate with a first plasma configured to reduce pre-existing defects on the substrate, and depositing a film comprising silicon and carbon on the substrate by applying a second plasma generated from at least one precursor and at least one reactant gas.
摘要翻译： 本发明通常提供一种用于减少沉积在半导体衬底上的薄膜上的缺陷的装置和方法。 本发明的一个实施方案提供了一种在基材上沉积膜的方法。 该方法包括用配置成减少衬底上预先存在的缺陷的第一等离子体处理衬底，以及通过施加由至少一种前体和至少一种反应气体产生的第二等离子体将包含硅和碳的膜沉积在衬底上。
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公开(公告)号：US07259111B2
公开(公告)日：2007-08-21
申请号：US11142124
申请日：2005-06-01
申请人： Deenesh Padhi , Ganesh Balasubramanian , Annamalai Lakshmanan , Zhenjiang Cui , Juan Carlos Rocha-Alvarez , Bok Hoen Kim , Hichem M'Saad , Steven Reiter , Francimar Schmitt
发明人： Deenesh Padhi , Ganesh Balasubramanian , Annamalai Lakshmanan , Zhenjiang Cui , Juan Carlos Rocha-Alvarez , Bok Hoen Kim , Hichem M'Saad , Steven Reiter , Francimar Schmitt
IPC分类号： H01L21/469
CPC分类号： H01L21/31633 , C23C16/029 , C23C16/401 , C23C16/45523 , C23C16/5096 , H01L21/02126 , H01L21/02216 , H01L21/02274
摘要： A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.
摘要翻译： 一种在没有等离子体放电的情况下将布置在单个处理室内的下面的衬底上沉积显示出高粘合强度的有机硅酸盐介电层的方法。 该方法包括将衬底定位在具有动力电极的处理室内，将界面气体混合物流入处理室，界面气体混合物包含一种或多种有机硅化合物和一种或多种氧化性气体，在衬底上沉积氧化硅层 通过改变工艺条件，其中电源电极的DC偏压变化小于60伏特。
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公开(公告)号：US20070281083A1
公开(公告)日：2007-12-06
申请号：US11756358
申请日：2007-05-31
CPC分类号： C23C16/4405 , C23C16/401 , H01J37/32357 , H01J37/32862
摘要： The present invention generally provides an apparatus and method for eliminating the “first wafer effect” for plasma enhanced chemical vapor deposition (PECVD). One embodiment of the present invention provides a method for preparing a chamber after the chamber being idle for a period of time. The method comprises a cleaning step followed by a season step and a heating step adapted to the length of the idle time.
摘要翻译： 本发明通常提供一种用于消除等离子体增强化学气相沉积（PECVD）的“第一晶圆效应”的装置和方法。 本发明的一个实施例提供一种在腔室闲置一段时间之后制备腔室的方法。 该方法包括清洁步骤，随后是季节步骤和适应空闲时间长度的加热步骤。
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公开(公告)号：US07273823B2
公开(公告)日：2007-09-25
申请号：US11145432
申请日：2005-06-03
IPC分类号： H01L21/31 , H01L21/409
CPC分类号： H01L21/31612 , C23C16/30 , C23C16/401 , C23C16/45523 , H01L21/02126 , H01L21/02274 , H01L21/02362 , H01L21/31633 , H01L21/76829
摘要： A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited in the presence of low frequency RF power from a gas mixture including an organosilicon compound and an oxidizing gas. The low frequency RF power is terminated after the deposition of the low dielectric constant film. The oxide rich cap is deposited on the low dielectric constant film in the absence of low frequency RF power from another gas mixture including the organosilicon compound and the oxidizing gas used to deposit the low dielectric constant film.
摘要翻译： 提供一种处理衬底的方法，包括在衬底上沉积包含硅，碳和氧的低介电常数膜并在低介电常数膜上沉积氧化物富盖。 在低频RF功率的存在下，由包括有机硅化合物和氧化气体的气体混合物沉积低介电常数膜。 在低介电常数膜的沉积之后，低频RF功率被终止。 在不存在来自包括有机硅化合物和用于沉积低介电常数膜的氧化气体的另一气体混合物的低频RF功率的情况下，在低介电常数膜上沉积富氧帽。
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7.发明申请公开(公告)号：US20060252273A1
公开(公告)日：2006-11-09
申请号：US11123501
申请日：2005-05-04
申请人： Annamalai Lakshmanan , Deenesh Padhi , Ganesh Balasubramanian , Zhenjiang Cui , Daemian Raj , Juan Rocha-Alvarez , Francimar Schmitt , Bok Kim
发明人： Annamalai Lakshmanan , Deenesh Padhi , Ganesh Balasubramanian , Zhenjiang Cui , Daemian Raj , Juan Rocha-Alvarez , Francimar Schmitt , Bok Kim
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/029 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31633 , H01L21/76801 , H01L21/76829 , Y10S438/931
摘要： A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped up during the deposition of the transition layer such that the transition layer has a carbon concentration gradient and an oxygen concentration gradient. The transition layer improves the adhesion of the dielectric layer to an underlying barrier layer on the substrate.
摘要翻译： 提供了一种处理衬底的方法，包括在处理室中的衬底上沉积过渡层和电介质层。 过渡层由包括有机硅化合物和氧化气体的处理气体沉积。 在沉积过渡层期间，有机硅化合物的流速升高，使得过渡层具有碳浓度梯度和氧浓度梯度。 过渡层改善了介电层对基底上的下层阻挡层的粘合性。
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公开(公告)号：US20060160376A1
公开(公告)日：2006-07-20
申请号：US11142124
申请日：2005-06-01
申请人： Deenesh Padhi , Ganesh Balasubramanian , Annamalai Lakshmanan , Zhenjiang Cui , Juan Rocha-Alvarez , Bok Kim , Hichem M'Saad , Steven Reiter , Francimar Schmitt
发明人： Deenesh Padhi , Ganesh Balasubramanian , Annamalai Lakshmanan , Zhenjiang Cui , Juan Rocha-Alvarez , Bok Kim , Hichem M'Saad , Steven Reiter , Francimar Schmitt
IPC分类号： H01L21/31
CPC分类号： H01L21/31633 , C23C16/029 , C23C16/401 , C23C16/45523 , C23C16/5096 , H01L21/02126 , H01L21/02216 , H01L21/02274
摘要： A method of depositing a organosilicate dielectric layer exhibiting high adhesion strength to an underlying substrate disposed within a single processing chamber without plasma arcing. The method includes positioning a substrate within a processing chamber having a powered electrode, flowing an interface gas mixture into the processing chamber, the interface gas mixture comprising one or more organosilicon compounds and one or more oxidizing gases, depositing a silicon oxide layer on the substrate by varying process conditions, wherein DC bias of the powered electrode varies less than 60 volts.
摘要翻译： 一种在没有等离子体放电的情况下将布置在单个处理室内的下面的衬底上沉积显示出高粘合强度的有机硅酸盐介电层的方法。 该方法包括将衬底定位在具有动力电极的处理室内，将界面气体混合物流入处理室，界面气体混合物包含一种或多种有机硅化合物和一种或多种氧化性气体，在衬底上沉积氧化硅层 通过改变工艺条件，其中电源电极的DC偏压变化小于60伏特。
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公开(公告)号：US20060276054A1
公开(公告)日：2006-12-07
申请号：US11145432
申请日：2005-06-03
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31612 , C23C16/30 , C23C16/401 , C23C16/45523 , H01L21/02126 , H01L21/02274 , H01L21/02362 , H01L21/31633 , H01L21/76829
摘要： A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited in the presence of low frequency RF power from a gas mixture including an organosilicon compound and an oxidizing gas. The low frequency RF power is terminated after the deposition of the low dielectric constant film. The oxide rich cap is deposited on the low dielectric constant film in the absence of low frequency RF power from another gas mixture including the organosilicon compound and the oxidizing gas used to deposit the low dielectric constant film.
摘要翻译： 提供一种处理衬底的方法，包括在衬底上沉积包含硅，碳和氧的低介电常数膜并在低介电常数膜上沉积氧化物富盖。 在低频RF功率的存在下，由包括有机硅化合物和氧化气体的气体混合物沉积低介电常数膜。 在低介电常数膜的沉积之后，低频RF功率被终止。 在不存在来自包括有机硅化合物和用于沉积低介电常数膜的氧化气体的另一气体混合物的低频RF功率的情况下，在低介电常数膜上沉积富氧帽。
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10.发明申请METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开用改进的密度和步骤覆盖沉积非晶碳膜的方法公开(公告)号：US20110104400A1
公开(公告)日：2011-05-05
申请号：US12987688
申请日：2011-01-10
申请人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
CPC分类号： H01L21/02115 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/02274 , H01L21/31144 , H01L21/3146
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译： 在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。 重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。 可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。
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