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    Conductive bi-layer e-beam resist with amorphous carbon
    2.
    发明申请
    Conductive bi-layer e-beam resist with amorphous carbon 失效
    具有无定形碳的导电双层电子束抗蚀剂

    公开(公告)号：US20040142281A1

    公开(公告)日：2004-07-22

    申请号：US10348690

    申请日：2003-01-21

    Applicant: Applied Materials, Inc.

    Inventor： Christopher D. Bencher ,  Ian S. Latchford

    IPC: G03C005/00

    CPC classification number: G03F7/093 ,  H01J2237/31754 ,  Y10S430/143

    Abstract: Methods for forming a patterned layer of amorphous carbon on a substrate are described. A layer of amorphous carbon may be formed on the substrate. A layer of electron sensitive resist may be formed on top of the amorphous carbon layer. A pattern transferred into the electron sensitive resist layer with an electron beam writing process is developed. During the electron beam writing process, electrons may be conducted away from the writing area through the amorphous carbon layer. The amorphous carbon layer may be etched through in at least one region defined by the pattern developed into the layer of electron sensitive resist material. For some embodiments, the amorphous carbon layer may be formed by chemical vapor deposition. For some embodiments, the layer of electron sensitive resist may be hydrogen silsesquioxane (HSQ).

    Abstract translation: 描述了在基板上形成非晶碳图案层的方法。 可以在衬底上形成无定形碳层。 可以在无定形碳层的顶部上形成一层电子敏感抗蚀剂。 开发了用电子束写入处理转移到电子敏感层中的图案。 在电子束写入过程中，可以通过无定形碳层将电子传导离开书写区域。 可以在至少一个由形成电子敏感抗蚀剂材料层的图案限定的区域内蚀刻无定形碳层。 对于一些实施方案，无定形碳层可以通过化学气相沉积形成。 对于一些实施方案，电子敏感抗蚀剂层可以是氢倍半硅氧烷（HSQ）。

    AIRGAP FOR SEMICONDUCTOR DEVICES
    4.
    发明申请
    AIRGAP FOR SEMICONDUCTOR DEVICES 失效
    用于半导体器件的航空器

    公开(公告)号：US20030224591A1

    公开(公告)日：2003-12-04

    申请号：US10159711

    申请日：2002-05-31

    Applicant: Applied Materials, Inc.

    Inventor： Ian S. Latchford ,  Christopher D. Bencher ,  Michael D. Armacost ,  Timothy Weidman ,  Christopher Ngai

    IPC: H01L021/44 ,  H01L021/4763 ,  H01L021/31 ,  H01L021/469

    CPC classification number: H01L21/764 ,  H01L21/7682 ,  H01L2221/1036

    Abstract: Embodiments of the invention generally provide a method of forming an air gap between conductive elements of a semiconductor device, wherein the air gap has a dielectric constant of approximately 1. The air gap may generally be formed by depositing a dielectric material between the respective conductive elements, depositing a porous layer over the conductive elements and the dielectric material, and then stripping the dielectric material out of the space between the respective conductive elements through the porous layer, which leaves an air gap between the respective conductive elements. The dielectric material may be, for example, an amorphous carbon layer, the porous layer may be, for example, a porous oxide layer, and the stripping process may utilize a downstream hydrogen-based strip process, for example.

    Abstract translation: 本发明的实施例通常提供一种在半导体器件的导电元件之间形成气隙的方法，其中气隙的介电常数约为1.气隙通常可以通过在相应的导电元件之间沉积介电材料而形成 在导电元件和电介质材料上沉积多孔层，然后通过多孔层将电介质材料从相应的导电元件之间的空间中剥离，该多孔层留下各导电元件之间的气隙。 介电材料可以是例如无定形碳层，多孔层可以是例如多孔氧化物层，并且剥离过程可以利用例如下游的氢基条带处理。

    Nitrogen doping of FSG layer
    5.
    发明申请
    Nitrogen doping of FSG layer 失效
    FSG层的氮掺杂

    公开(公告)号：US20020133258A1

    公开(公告)日：2002-09-19

    申请号：US09759854

    申请日：2001-01-12

    Applicant: Applied Materials. Inc.

    Inventor： Christopher Ngai ,  Christopher D. Bencher ,  Joe Feng ,  Peter Chen

    IPC: G06F019/00 ,  G05D007/00 ,  G05D011/00 ,  H01L021/31 ,  H01L021/469

    CPC classification number: H01L21/76826 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31138 ,  H01L21/3115 ,  H01L21/3143 ,  H01L21/31629 ,  H01L21/32051 ,  H01L21/76807 ,  H01L21/76814

    Abstract: Embodiments of the present invention provide nitrogen doping of a fluorinated silicate glass (FSG) layer to improve adhesion between the nitrogen-containing FSG layer and other layers such as barrier layers. In some embodiments, a nitrogen-containing FSG layer is deposited on a substrate in a process chamber by supplying a gaseous mixture to the process chamber. The gaseous mixture comprises a silicon-containing gas, a fluorine-containing gas, an oxygen-containing gas, and a nitrogen-containing gas. Energy is provided to the gaseous mixture to deposit the nitrogen-containing FSG layer onto the substrate. A plasma may be formed from the gaseous mixture to deposit the layer. In some embodiments, an FSG film that has been formed is doped with nitrogen by a plasma treatment using a nitrogen-containing chemistry. For example, nitrogen ashing in a damascene process may introduce nitrogen dopants into the surface of the FSG layer. The nitrogen-containing FSG layer exhibits good adhesion with barrier layers for copper such as those including tantalum, tantalum nitride, or the like.

    Abstract translation: 本发明的实施方案提供氟化硅酸盐玻璃（FSG）层的氮掺杂，以改善含氮FSG层和其它层如阻挡层之间的粘附性。 在一些实施方案中，通过向处理室供应气态混合物，将氮含量的FSG层沉积在处理室中的衬底上。 气体混合物包含含硅气体，含氟气体，含氧气体和含氮气体。 将能量提供给气体混合物以将含氮FSG层沉积到基底上。 可以由气体混合物形成等离子体以沉积该层。 在一些实施方案中，已经形成的FSG膜通过使用含氮化学物质的等离子体处理掺杂氮气。 例如，在镶嵌工艺中的氮灰化可能会将氮掺杂物引入到FSG层的表面中。 含氮的FSG层对于诸如包括钽，氮化钽等的铜的阻挡层具有良好的粘附性。

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