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公开(公告)号：US20250022704A1
公开(公告)日：2025-01-16
申请号：US18221240
申请日：2023-07-12
Applicant: Applied Materials, Inc.
Inventor： Qiang Ma , Biao Liu , Bhargav S. Citla , Srinivas D. Nemani , Ellie Y. Yieh , Taiki Hatakeyama , Shreyas Shukla , Mei-Yee Shek
IPC: H01L21/02 , H01J37/32 , H01L21/311
Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing an oxygen-containing precursor to the processing region, forming plasma effluents of the oxygen-containing precursor, and contacting the silicon-containing material with the plasma effluents of the oxygen-containing precursor to form a silicon-and-oxygen-containing material. The methods may include providing a fluorine-containing precursor to the processing region, forming plasma effluents of the fluorine-containing precursor, and etching the silicon-and-oxygen-containing material from a top, a sidewall, or both of the feature with the plasma effluents of the fluorine-containing precursor.
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公开(公告)号：US20240145246A1
公开(公告)日：2024-05-02
申请号：US17973927
申请日：2022-10-26
Applicant: Applied Materials, Inc.
Inventor： Yi Yang , In Soo Jung , Sean S. Kang , Srinivas D. Nemani , Papo Chen , Ellie Y. Yieh
IPC: H01L21/223 , H01L21/02 , H01L21/3065
CPC classification number: H01L21/223 , H01L21/02236 , H01L21/3065
Abstract: Embodiments of the present technology include semiconductor processing methods. The methods may include providing a silicon-containing precursor and a dopant precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the semiconductor processing chamber. A silicon-containing material may be formed on the substrate. The methods may include contacting the silicon-containing material with the silicon-containing precursor and the dopant precursor. The methods may include forming a doped silicon-containing material on the silicon-containing material. The methods may include oxidizing the substrate. The oxidizing may form an oxidized doped silicon-containing material. The methods may include etching the oxidized doped silicon-containing material.
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公开(公告)号：US11899366B2
公开(公告)日：2024-02-13
申请号：US17468536
申请日：2021-09-07
Applicant: Applied Materials, Inc.
Inventor： Viachslav Babayan , Douglas A. Buchberger, Jr. , Qiwei Liang , Ludovic Godet , Srinivas D. Nemani , Daniel J. Woodruff , Randy Harris , Robert B. Moore
CPC classification number: G03F7/2035 , G03F7/168 , G03F7/26 , G03F7/38 , G03F7/40 , H01L21/67017 , H01L21/67103 , H01L21/68764
Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.
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公开(公告)号：US11880137B2
公开(公告)日：2024-01-23
申请号：US18188676
申请日：2023-03-23
Applicant: Applied Materials, Inc.
Inventor： Huixiong Dai , Mangesh Ashok Bangar , Srinivas D. Nemani , Ellie Y. Yieh , Steven Hiloong Welch , Christopher S. Ngai
CPC classification number: G03F7/094 , G03F7/0045 , G03F7/0392 , G03F7/11 , G03F7/168 , G03F7/203 , G03F7/2022 , G03F7/164 , G03F7/40
Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.
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公开(公告)号：US20230377875A1
公开(公告)日：2023-11-23
申请号：US18229285
申请日：2023-08-02
Applicant: Applied Materials, Inc.
Inventor： Bhargav S. Citla , Soham Asrani , Joshua Rubnitz , Srinivas D. Nemani , Ellie Y. Yieh
IPC: H01L21/02 , H01L21/3065 , H01J37/32 , H01L21/311
CPC classification number: H01L21/02274 , H01L21/3065 , H01J37/32146 , H01L21/31116 , H01J2237/332 , H01J2237/334
Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The processing region may be at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.
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公开(公告)号：US11815816B2
公开(公告)日：2023-11-14
申请号：US17176108
申请日：2021-02-15
Applicant: Applied Materials, Inc.
Inventor： Douglas A Buchberger, Jr. , Dmitry Lubomirsky , John O. Dukovic , Srinivas D. Nemani
IPC: G03F7/38
CPC classification number: G03F7/38
Abstract: A method and apparatus for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes is provided herein. The method and apparatus include an electrode assembly and a base assembly. The electrode assembly includes a permeable electrode. The base assembly includes one or more process fluid channels disposed around a circumference of the substrate support surface and configured to fill a process volume with a process fluid. The electrode assembly is configured to apply an electric field to a substrate disposed within the process volume.
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公开(公告)号：US11756828B2
公开(公告)日：2023-09-12
申请号：US16197048
申请日：2018-11-20
Applicant: Applied Materials, Inc.
Inventor： Keith Tatseun Wong , Srinivas D. Nemani , Ellie Y. Yieh
IPC: H01L21/768 , H01L23/532 , H01L21/285
CPC classification number: H01L21/76834 , H01L21/28562 , H01L21/76832 , H01L23/5329
Abstract: Methods for forming a transition metal material on a substrate and thermal processing such metal containing material in a cluster processing system are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a two-dimensional transition metal dichalcogenide layer on a substrate in a first processing chamber disposed in a cluster processing system, thermally treating the two-dimensional transition metal dichalcogenide layer to form a treated metal layer in a second processing chamber disposed in the cluster processing system, and forming a capping layer on the treated metal layer in a third processing chamber disposed in the cluster processing system.
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公开(公告)号：US11650506B2
公开(公告)日：2023-05-16
申请号：US16600101
申请日：2019-10-11
Applicant: Applied Materials, Inc.
Inventor： Huixiong Dai , Mangesh Bangar , Christopher S. Ngai , Srinivas D. Nemani , Ellie Y. Yieh , Steven Hiloong Welch
CPC classification number: G03F7/2022 , G03F7/094 , G03F7/11 , G03F7/168 , G03F7/203 , G03F7/164 , G03F7/40
Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.
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公开(公告)号：US11566325B2
公开(公告)日：2023-01-31
申请号：US17120494
申请日：2020-12-14
Applicant: Applied Materials, Inc.
Inventor： Mei-Yee Shek , Bhargav S. Citla , Joshua Rubnitz , Jethro Tannos , Chentsau Chris Ying , Srinivas D. Nemani , Ellie Y. Yieh
IPC: C23C16/36 , C01B21/082 , C23C16/44 , C23C16/50 , C09D1/00
Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.
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公开(公告)号：US20220157654A1
公开(公告)日：2022-05-19
申请号：US17587525
申请日：2022-01-28
Applicant: Applied Materials, Inc.
Inventor： Srinivas Gandikota , Steven C.H. Hung , Srinivas D. Nemani , Yixiong Yang , Susmit Singha Roy , Nikolaos Bekiaris
IPC: H01L21/768 , H01L23/48
Abstract: A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal. The metal cap comprises one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to an anneal process, e.g., a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.
