公开(公告)号：US20230128390A1

公开(公告)日：2023-04-27

申请号：US18048099

申请日：2022-10-20

申请人： ASM IP Holding, B.V.

发明人： Shujin Huang ,  Junweli Su ,  Wentao Wang ,  Zhizhong Chen ,  Xing Lin ,  Jiwen Xiang

IPC分类号： H01L21/687

摘要： A substrate support includes a disc body with an upper surface and an opposite lower surface arranged along a rotation axis. The upper surface has a circular concave portion extending about the rotation axis, an annular ledge portion extending circumferentially about the concave portion, and an annular rim portion extending circumferentially about the ledge portion connecting to the concave portion of the disc body by the ledge portion of the disc body. The ledge portion slopes downward radially outward from the rotation axis to seat a substrate on the disc body such that a beveled edge of the substrate is cantilevered above the ledge portion of the upper surface of the disc body. Substrate support assemblies, semiconductor processing systems, and film deposition methods are also described.

公开(公告)号：US20220189804A1

公开(公告)日：2022-06-16

申请号：US17549311

申请日：2021-12-13

申请人： ASM IP Holding B.V.

发明人： Siyao Luan ,  Peipei Gao ,  Xing Lin ,  Alexandros Demos ,  Kishor Patil

IPC分类号： H01L21/67 ,  C23C16/458 ,  C23C16/455

摘要： A fixture includes a frame, a leveling plate, a bracket, and a laser profiler. The frame is arranged for fixation above a reaction chamber arranged to deposit a film onto a substrate. The leveling plate is supported on the frame. The bracket is supported on the leveling plate. The laser profiler is suspended from the bracket, overlays the reaction chamber, and has a field of view that extends through the leveling plate and the frame to determine position of a target within the reaction chamber. Semiconductor processing systems and methods of determining position of targets within reaction chambers in semiconductor processing systems are also described.

公开(公告)号：US20210102292A1

公开(公告)日：2021-04-08

申请号：US17060507

申请日：2020-10-01

申请人： ASM IP Holding B.V.

发明人： Xing Lin ,  Peipei Gao ,  Prajwal Nagaraj ,  Mingyang Ma ,  Wentao Wang ,  Ion Hong Chao ,  Alexandros Demos ,  Paul Ma ,  Hichem M'Saad

IPC分类号： C23C16/455 ,  C23C16/40

摘要： A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

公开(公告)号：US20220298672A1

公开(公告)日：2022-09-22

申请号：US17697107

申请日：2022-03-17

申请人： ASM IP Holding B.V.

发明人： Hichem M'Saad ,  Alexandros Demos ,  Xing Lin ,  Junwei Su ,  Matthew Goodman ,  Daw Gen Lim ,  Shujin Huang ,  Rutvij Naik

IPC分类号： C30B25/16 ,  H01L21/66 ,  C30B25/10 ,  C30B25/12 ,  C30B23/06 ,  C23C16/52 ,  C23C16/46 ,  C23C14/54 ,  F27B17/00 ,  H05B3/00 ,  H05B1/02 ,  G01J5/00

摘要： A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.

公开(公告)号：US20230116427A1

公开(公告)日：2023-04-13

申请号：US17962009

申请日：2022-10-07

申请人： ASM IP Holding B.V.

发明人： Junwei Su ,  Jiwen Xiang ,  Shujin Huang ,  Loc Vinh Tran ,  Wentao Wang ,  Xing Lin

IPC分类号： C23C16/44 ,  H01L21/687 ,  H01L21/02 ,  C23C16/52 ,  C23C16/02 ,  C23C16/24

摘要： A semiconductor processing system includes a gas delivery module, and a chamber body connected to the gas delivery module. The divider has an aperture, is fixed within an interior of the chamber body, and separates an interior of the chamber body into upper and lower chambers, the aperture fluidly coupling the lower chamber to the upper chamber. A susceptor is arranged within the aperture. A controller is operably connected to the gas delivery module to purge the lower chamber with a first purge flow including an etchant while etching the upper chamber, purge the lower chamber with a second purge flow including the etchant while depositing a precoat in the upper chamber, and purge the lower chamber with a third purge flow including the etchant while depositing a film onto a substrate in the upper chamber. Film deposition methods and lower chamber etchant purge kits are also described.

公开(公告)号：US20220301906A1

公开(公告)日：2022-09-22

申请号：US17697164

申请日：2022-03-17

申请人： ASM IP Holding B.V.

发明人： Rutvij Naik ,  Shujin Huang ,  Junwei Su ,  Xing Lin

IPC分类号： H01L21/67 ,  H05B31/00

摘要： A reactor system designed to provide accurate monitoring of wafer temperatures during deposition steps. The reactor system includes a pyrometer mounting assembly supporting and positioning three or more pyrometers (e.g., infrared (IR) pyrometers) relative to the reaction chamber to measure a center wafer temperature and an edge wafer temperature as well as reaction chamber temperature. The pyrometer mounting assembly provides a small spot size or temperature sensing area with the edge pyrometer to accurately measure edge wafer temperatures. A jig assembly, and installation method for each tool setup, is provided for use in achieving accurate alignment of the IR pyrometer sensing spot (and the edge pyrometer) relative to the wafer, when the pyrometer mounting assembly is mounted upon a lamp bank in the reactor system or in tool setup. The wafer edge temperature sensing with the reactor system assembled with proper alignment ensures accurate and repeatable measurement of wafer temperatures.

公开(公告)号：US20220301905A1

公开(公告)日：2022-09-22

申请号：US17697145

申请日：2022-03-17

申请人： ASM IP Holding B.V.

发明人： Han Ye ,  Kai Zhou ,  Peipei Gao ,  Wentao Wang ,  Kishor Patil ,  Fan Gao ,  Krishnaswamy Mahadevan ,  Xing Lin ,  Alexandros Demos

IPC分类号： H01L21/67 ,  H01L21/66 ,  C23C16/46 ,  C23C16/52

摘要： A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.

公开(公告)号：US20220301856A1

公开(公告)日：2022-09-22

申请号：US17655245

申请日：2022-03-17

申请人： ASM IP HOLDING B.V.

发明人： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC分类号： H01L21/02 ,  H01L21/311 ,  B08B5/00 ,  H01L21/67

摘要： In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US20220181193A1

公开(公告)日：2022-06-09

申请号：US17457605

申请日：2021-12-03

申请人： ASM IP HOLDING B.V.

发明人： Peipei Gao ,  Wentao Wang ,  Xing Lin ,  Han Ye ,  Ion Hong Chao ,  Siyao Luan ,  Alexandros Demos ,  Fan Gao

IPC分类号： H01L21/687

摘要： A substrate support and lift assembly configured to support and lift a substrate from a susceptor is disclosed. The substrate support and lift assembly can include a susceptor support and a lift pin. The susceptor support can be configured to support the susceptor thereon. The susceptor support includes a plurality of support arms each extending radially from a central portion of the susceptor support to a terminus. Each of the plurality of support arms includes an aperture extending therethrough. The lift pin can be configured to fit through the aperture of a corresponding support arm to lift a substrate on the susceptor.

公开(公告)号：US20210125853A1

公开(公告)日：2021-04-29

申请号：US17075504

申请日：2020-10-20

申请人： ASM IP HOLDING B.V.

发明人： Saket Rathi ,  Shiva K.T. Rajavelu Muralidhar ,  Siyao Luan ,  Alexandros Demos ,  Xing Lin

IPC分类号： H01L21/687 ,  H01L21/324 ,  H01L21/67 ,  H01L21/268

摘要： A susceptor for semiconductor substrate processing is disclosed herein. In some embodiments, the susceptor may comprise an inner susceptor portion and an outer susceptor portion. The susceptor portions may self-align via complementary features, such as tabs on the outer susceptor and recesses on the inner susceptor portion. The inner susceptor portion may contain several contact pads with which to support a wafer during semiconductor processing. In some embodiments, the contact pads are hemispherical to reduce contact area with the wafer, thereby reducing risk of backside damage. The inner susceptor portion may contain a cavity with which to receive a thermocouple. In some embodiments, the diameter of the cavity is greater than the diameter of the thermocouple such that the thermocouple does not contact the walls of the cavity during processing, thereby providing highly accurate temperature measurements.