公开(公告)号：US11654454B2

公开(公告)日：2023-05-23

申请号：US17820180

申请日：2022-08-16

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: C23C16/455 ,  H01L51/00 ,  B05D1/00

CPC classification number: B05D1/60 ,  C23C16/45525 ,  H01L51/001

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

公开(公告)号：US20230091094A1

公开(公告)日：2023-03-23

申请号：US17900578

申请日：2022-08-31

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Daniele Piumi ,  Yoann Tomczak ,  Ivan Zyulkov ,  Charles Dezelah ,  Arpita Saha ,  David de Roest ,  Jerome Innocent ,  Michael Givens ,  Monica Thukkaram

IPC: G03F7/11 ,  G03F7/16

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (σα) of greater than 2×106 cm2/mol.

公开(公告)号：US20230085443A1

公开(公告)日：2023-03-16

申请号：US17932605

申请日：2022-09-15

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Linda Lindroos ,  Hannu Huotari

IPC: H01L23/48 ,  H01L21/285 ,  C23C16/455 ,  H01L21/768 ,  C23C16/34

Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

公开(公告)号：US20220316057A1

公开(公告)日：2022-10-06

申请号：US17844153

申请日：2022-06-20

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Tom E. Blomberg

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52

Abstract: The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified. The pulse profile can be modified to create a low or very low partial pressure pulse profile at the beginning of a pulse.

公开(公告)号：US11217444B2

公开(公告)日：2022-01-04

申请号：US16206589

申请日：2018-11-30

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Jan Willem Maes

IPC: H01L21/02 ,  H01L21/3213 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/033

Abstract: A method for forming ultraviolet (UV) radiation responsive metal-oxide containing film is disclosed. The method may include, depositing an UV radiation responsive metal oxide-containing film over a substrate by, heating the substrate to a deposition temperature of less than 400° C., contacting the substrate with a first vapor phase reactant comprising a metal component, a hydrogen component, and a carbon component, and contacting the substrate with a second vapor phase reactant comprising an oxygen containing precursor, wherein regions of the UV radiation responsive metal oxide-containing film have a first etch rate after UV irradiation and regions of the UV radiation responsive metal oxide-containing film not irradiated with UV radiation have a second etch rate, wherein the second etch rate is different from the first etch rate.

公开(公告)号：US20200235037A1

公开(公告)日：2020-07-23

申请号：US16838455

申请日：2020-04-02

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Linda Lindroos ,  Hannu Huotari

IPC: H01L23/48 ,  H01L21/285 ,  C23C16/455 ,  H01L21/768 ,  C23C16/34

Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

公开(公告)号：US20200181766A1

公开(公告)日：2020-06-11

申请号：US16594365

申请日：2019-10-07

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/22 ,  C23C16/18 ,  H01L21/768 ,  H01L21/285 ,  C23C16/56 ,  C23C16/455 ,  C23C16/30 ,  C23C16/06 ,  C23C16/02

Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

公开(公告)号：US20200176246A1

公开(公告)日：2020-06-04

申请号：US16206589

申请日：2018-11-30

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Jan Willem Maes

IPC: H01L21/02 ,  H01L21/3213 ,  C23C16/40 ,  C23C16/455

Abstract: A method for forming ultraviolet (UV) radiation responsive metal-oxide containing film is disclosed. The method may include, depositing an UV radiation responsive metal oxide-containing film over a substrate by, heating the substrate to a deposition temperature of less than 400° C., contacting the substrate with a first vapor phase reactant comprising a metal component, a hydrogen component, and a carbon component, and contacting the substrate with a second vapor phase reactant comprising an oxygen containing precursor, wherein regions of the UV radiation responsive metal oxide-containing film have a first etch rate after UV irradiation and regions of the UV radiation responsive metal oxide-containing film not irradiated with UV radiation have a second etch rate, wherein the second etch rate is different from the first etch rate.

公开(公告)号：US20170110601A1

公开(公告)日：2017-04-20

申请号：US14885721

申请日：2015-10-16

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Hannu Huotari

IPC: H01L31/0232 ,  H01L33/00 ,  H01L33/58 ,  H01L31/18

CPC classification number: H01L31/02322 ,  C23C14/06 ,  C23C14/0694 ,  C23C16/22 ,  C23C16/30 ,  C23C16/45525 ,  H01L31/032 ,  H01L31/062 ,  H01L31/072 ,  H01L31/18 ,  H01L33/005 ,  H01L33/58 ,  H01L2933/0016 ,  H01L2933/0025 ,  Y02E10/50

Abstract: Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.

公开(公告)号：US20230132743A1

公开(公告)日：2023-05-04

申请号：US18146868

申请日：2022-12-27

Applicant: ASM IP HOLDING B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore ,  Hannu Huotari

IPC: H01L21/02 ,  C23C16/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

Abstract: Disclosed is a process for forming a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space by a plurality of deposition cycles. At least one deposition cycle includes contacting a surface of the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that includes reactive species. The reactive species are generated from a gas that flows continuously to the reaction space throughout the at least one deposition cycle. A ratio of a wet etch rate of the SiOC thin film to a wet etch rate of thermal silicon oxide is less than 5.