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    Atomic layer etching processes
    3.
    发明授权
    Atomic layer etching processes 有权

    公开(公告)号：US11640899B2

    公开(公告)日：2023-05-02

    申请号：US17452156

    申请日：2021-10-25

    申请人： ASM IP HOLDING B.V.

    发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko J. Tuominen ,  Chiyu Zhu

    IPC分类号： H01J37/32 ,  C23F1/12 ,  H01L21/311 ,  C23G5/00 ,  H01L21/3213

    摘要： Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

    Combination CVD/ALD method, source and pulse profile modification
    6.
    发明申请
    Combination CVD/ALD method, source and pulse profile modification 有权

    公开(公告)号：US20220316057A1

    公开(公告)日：2022-10-06

    申请号：US17844153

    申请日：2022-06-20

    申请人： ASM IP Holding B.V.

    发明人： Hannu Huotari ,  Tom E. Blomberg

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/52

    摘要： The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified. The pulse profile can be modified to create a low or very low partial pressure pulse profile at the beginning of a pulse.

    Selective deposition on metal or metallic surfaces relative to dielectric surfaces
    8.
    发明授权
    Selective deposition on metal or metallic surfaces relative to dielectric surfaces 有权

    公开(公告)号：US11174550B2

    公开(公告)日：2021-11-16

    申请号：US16575112

    申请日：2019-09-18

    申请人： ASM IP HOLDING B.V.

    发明人： Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Tom E. Blomberg

    IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C16/04

    摘要： Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.

    FLUORINE-CONTAINING CONDUCTIVE FILMS
    10.
    发明申请
    FLUORINE-CONTAINING CONDUCTIVE FILMS 审中-公开

    公开(公告)号：US20200235037A1

    公开(公告)日：2020-07-23

    申请号：US16838455

    申请日：2020-04-02

    申请人： ASM IP HOLDING B.V.

    发明人： Tom E. Blomberg ,  Linda Lindroos ,  Hannu Huotari

    IPC分类号： H01L23/48 ,  H01L21/285 ,  C23C16/455 ,  H01L21/768 ,  C23C16/34

    摘要： An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.