-
公开(公告)号：US20190064680A1
公开(公告)日：2019-02-28
申请号：US16083076
申请日：2017-02-22
IPC分类号： G03F7/20
摘要： Corrections are calculated for use in controlling a lithographic apparatus. Using a metrology apparatus a performance parameter is measured at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data is available, this is added to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate which is a combination of values estimated by the process model and partly on real measurement data.
-
公开(公告)号：US20210191278A1
公开(公告)日：2021-06-24
申请号：US17197167
申请日：2021-03-10
发明人： Wim Tjibbo TEL , Bart Peter Bert SEGERS , Everhardus Cornelis MOS , Emil Peter SCHMITT-WEAVER , Yichen ZHANG , Petrus Gerardus VAN RHEE , Xing Lan LIU , Maria KILITZIRAKI , Reiner Maria JUNGBLUT , Hyunwoo YU
摘要： A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
-
公开(公告)号：US20180173118A1
公开(公告)日：2018-06-21
申请号：US15736451
申请日：2016-05-27
IPC分类号： G03F9/00 , G03F7/20 , G05B19/4097
CPC分类号： G03F9/7019 , G03F7/705 , G03F7/70516 , G03F7/70633 , G05B19/4097 , G05B2219/35012 , G05B2219/45028 , G05B2219/45031
摘要： A first substrate (2002) has a calibration pattern applied to a first plurality of fields (2004) by a lithographic apparatus. Further substrates (2006, 2010) have calibration patterns applied to further pluralities of fields (2008, 2012). The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates (2002, 2006, 2010) and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (2004, 2008, 2012) is gathered together in a database (2013) and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.
-
公开(公告)号：US20210018847A1
公开(公告)日：2021-01-21
申请号：US17061641
申请日：2020-10-02
发明人： Emil Peter SCHMITT-WEAVER , Kaustuve BHATTACHARYYA , Wim Tjibbo TEL , Frank STAALS , Leon Martin LEVASIER
摘要： A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.
-
5.发明申请LITHOGRAPHY SYSTEM AND A MACHINE LEARNING CONTROLLER FOR SUCH A LITHOGRAPHY SYSTEM 有权LITHOGRAPHY系统和一台机器学习控制器公开(公告)号：US20160170311A1
公开(公告)日：2016-06-16
申请号：US14905611
申请日：2014-08-06
发明人： Emil Peter SCHMITT-WEAVER , Wolfgang HENKE , Thomas Leo HOOGENBOOM , Pavel IZIKSON , Paul Frank LUEHRMANN , Daan Maurits SLOTBOOM , Jens STAECKER , Alexander YPMA
IPC分类号： G03F7/20
CPC分类号： G03F7/70516 , G03F7/70491 , G03F7/70525 , G03F7/70625 , G03F7/70633
摘要： A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.
摘要翻译： 一种光刻系统，被配置为将图案应用于基底，所述系统包括被配置为根据图案暴露基底层的光刻设备，以及机器学习控制器，被配置为控制光刻系统以优化图案的特性， 机器学习控制器被配置为基于由测量单元测量的属性来进行训练，所述测量单元被配置成测量所述层中的暴露图案的性质和/或与将图案暴露于衬底相关联的属性，并且修正光刻系统 通过调整选自以下的一个或多个漂移：光刻设备，被配置为将该层施加在用于光刻曝光的基板上的轨道单元和/或控制单元，被配置为控制轨道单元，光刻设备之间的自动衬底流动， 和计量单位。
-
公开(公告)号：US20220291590A1
公开(公告)日：2022-09-15
申请号：US17634309
申请日：2020-07-09
发明人： Jing SU , Yana CHENG , Zchenxi LIN , Yi ZOU , Ddavit HARUTYUNYAN , Emil Peter SCHMITT-WEAVER , Kaustuve BHATTACHARYYA , Cornelis Johannes Henricus LAMBREGTS , Hadi YAGUBIZADE
IPC分类号： G03F7/20
摘要： A method for determining a model to predict overlay data associated with a current substrate being patterned. The method involves obtaining (i) a first data set associated with one or more prior layers and/or current layer of the current substrate, (ii) a second data set including overlay metrology data associated with one or more prior substrates, and (iii) de-corrected measured overlay data associated with the current layer of the current substrate; and determining, based on (i) the first data set, (ii) the second data set, and (iii) the de-corrected measured overlay data, values of a set of model parameters associated with the model such that the model predicts overlay data for the current substrate, wherein the values are determined such that a cost function is minimized, the cost function comprising a difference between the predicted data and the de-corrected measured overlay data.
-
公开(公告)号：US20220026809A1
公开(公告)日：2022-01-27
申请号：US17291513
申请日：2019-10-15
摘要： A method of determining a parameter of a lithographic apparatus, wherein the method includes providing first height variation data of a first substrate, providing first performance data of a first substrate, and determining a model based on the first height variation data and the first performance data. The method further includes obtaining second height variation data of a second substrate, inputting the second height variation data to the model, and determining second performance data of the second substrate by running the model. Based on the second performance data, the method determines a parameter of the apparatus.
-
公开(公告)号：US20200218170A1
公开(公告)日：2020-07-09
申请号：US16822870
申请日：2020-03-18
摘要： A first substrate 2002 has a calibration pattern applied to a first plurality of fields 2004 by a lithographic apparatus. Further substrates 2006, 2010 have calibration patterns applied to further pluralities of fields 2008, 2012. The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates 2002, 2006, 2010 and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (fields 2004, 2008, 2012 in this example) is gathered together in a database 2013 and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.
-
公开(公告)号：US20220260925A1
公开(公告)日：2022-08-18
申请号：US17738093
申请日：2022-05-06
发明人： Wim Tjibbo TEL , Bart Peter Bert SEGERS , Everhardus Cornelis MOS , Emil Peter SCHMITT-WEAVER , Yichen ZHANG , Petrus Gerardus VAN RHEE , Xing Lan LIU , Maria KILITZIRAKI , Reiner Maria JUNGBLUT , Hyunwoo YU
摘要： A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
-
10.发明申请公开(公告)号：US20220035259A1
公开(公告)日：2022-02-03
申请号：US17501911
申请日：2021-10-14
发明人： Hakki Ergün CEKLI , Masashi ISHIBASHI , Wendy Johanna Martina VAN DE VEN , Willem Seine Christian ROELOFS , Elliott Gerard MC NAMARA , Rizvi RAHMAN , Michiel KUPERS , Emil Peter SCHMITT-WEAVER , Erik Henri Adriaan DELVIGNE
IPC分类号： G03F7/20 , G01N21/956 , G03F9/00 , H01L21/66
摘要： Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.
-
-
-
-
-
-
-
-
-
搜索结果
15 条记录 (耗时 0.013 秒)