公开(公告)号：US20170046473A1

公开(公告)日：2017-02-16

申请号：US15339669

申请日：2016-10-31

申请人： ASML NETHERLANDS B.V.

发明人： Christophe David FOUQUET ,  Bernardo KASTRUP ,  Arie Jeffrey DEN BOEF ,  Johannes Catharinus Hubertus MULKENS ,  James Benedict KAVANAGH ,  James Patrick KOONMEN ,  Neal Patrick CALLAN

IPC分类号： G06F17/50 ,  G03F7/20 ,  G06N7/00

CPC分类号： G06F17/5081 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F17/5009 ,  G06N7/005 ,  H01L22/20

摘要： Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

摘要翻译： 这里公开了一种用于设备制造过程的计算机实现的缺陷预测方法，该方法涉及将设计布局的一部分处理到衬底上，所述方法包括：从所述设计布局的所述部分中识别热点; 确定所述热点的装置制造过程的处理参数的值的范围，其中当所述处理参数具有超出所述范围的值时，通过所述装置制造过程从所述热点产生缺陷; 确定处理参数的实际值; 使用设备制造过程从热点产生的缺陷确定或预测使用实际值存在，存在概率，特性或其组合。

公开(公告)号：US20150045935A1

公开(公告)日：2015-02-12

申请号：US14525704

申请日：2014-10-28

申请人： ASML NETHERLANDS B.V.

发明人： Yu CAO ,  Wenjin SHAO ,  Ronaldus Johannes Gijsbertus GOOSSENS ,  Jun YE ,  James Patrick KOONMEN

IPC分类号： B29C67/00

CPC分类号： B29C64/386 ,  G03F7/70091 ,  G03F7/70458 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G06F17/50 ,  G06F17/5009 ,  G06F17/5081

摘要： Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.

摘要翻译： 描述用于调整光刻工艺的系统和方法。 保持目标扫描仪的型号，参考一组可调谐参数来定义目标扫描仪的灵敏度。 差分模型表示目标扫描器与参考值的偏差。 可以基于参考扫描仪和差分模型的设置来调整目标扫描仪。 可以相对于参考扫描仪的性能来表征相关扫描仪系列的性能。 差分模型可能包括诸如参数偏移和可能用于模拟成像行为差异的其他差异的信息。

公开(公告)号：US20210357570A1

公开(公告)日：2021-11-18

申请号：US17389682

申请日：2021-07-30

申请人： ASML NETHERLANDS B.V.

发明人： Christophe David FOUQUET ,  Bernardo KASTRUP ,  Arie Jeffrey DEN BOEF ,  Johannes Catharinus Hubertus MULKENS ,  James Benedict KAVANAGH ,  James Patrick KOONMEN ,  Neal Patrick CALLAN

IPC分类号： G06F30/398 ,  H01L21/66 ,  G03F7/20 ,  G06F30/20 ,  G06N7/00

摘要： A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

公开(公告)号：US20150356233A1

公开(公告)日：2015-12-10

申请号：US14730993

申请日：2015-06-04

申请人： ASML NETHERLANDS B.V.

发明人： Christophe David FOUQUET ,  Bernardo KASTRUP ,  Arie Jeffrey DEN BOEF ,  Johannes Catharinus Hubertus MULKENS ,  James Benedict KAVANAGH ,  James Patrick KOONMEN ,  Neal Patrick CALLAN

IPC分类号： G06F17/50 ,  H01L21/66

CPC分类号： G06F17/5081 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F17/5009 ,  G06N7/005 ,  H01L22/20

摘要： Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

摘要翻译： 这里公开了一种用于设备制造过程的计算机实现的缺陷预测方法，该方法涉及将设计布局的一部分处理到衬底上，所述方法包括：从所述设计布局的所述部分中识别热点; 确定所述热点的装置制造过程的处理参数的值的范围，其中当所述处理参数具有超出所述范围的值时，通过所述装置制造过程从所述热点产生缺陷; 确定处理参数的实际值; 使用设备制造过程从热点产生的缺陷确定或预测使用实际值存在，存在概率，特性或其组合。

公开(公告)号：US20150025668A1

公开(公告)日：2015-01-22

申请号：US14507553

申请日：2014-10-06

申请人： ASML NETHERLANDS B.V.

发明人： Jun YE ,  Yu CAO ,  James Patrick KOONMEN

IPC分类号： G03F9/00 ,  B29C67/00

CPC分类号： G03F7/70525 ,  B29C64/386 ,  G03F9/7096 ,  G05B13/04

摘要： The present invention provides a number of innovations in the area of computational process control (CPC). CPC offers unique diagnostic capability during chip manufacturing cycle by analyzing temporal drift of a lithography apparatus/ process, and provides a solution towards achieving performance stability of the lithography apparatus/process. Embodiments of the present invention enable optimized process windows and higher yields by keeping performance of a lithography apparatus and/or parameters of a lithography process substantially close to a pre-defined baseline condition. This is done by comparing the measured temporal drift to a baseline performance using a lithography process simulation model. Once in manufacturing, CPC optimizes a scanner for specific patterns or reticles by leveraging wafer metrology techniques and feedback loop, and monitors and controls, among other things, overlay and/or CD uniformity (CDU) performance over time to continuously maintain the system close to the baseline condition.

摘要翻译： 本发明提供了计算过程控制（CPC）领域的许多创新。 CPC通过分析光刻设备/工艺的时间漂移​​，在芯片制造周期中提供独特的诊断功能，并为实现光刻设备/工艺的性能稳定性提供了解决方案。 本发明的实施例通过保持光刻设备的性能和/或基本上接近预定义基线条件的光刻工艺的参数来实现优化的工艺窗口和更高的产量。 这通过使用光刻过程模拟模型将测量的时间漂移​​与基线性能进行比较来完成。 一旦制造，CPC通过利用晶片计量技术和反馈回路来优化扫描仪的特定图案或掩模版，并监控和控制其他方面的重叠和/或CD均匀性（CDU）性能，以持续保持系统接近 基线条件。

公开(公告)号：US20140351773A1

公开(公告)日：2014-11-27

申请号：US14456586

申请日：2014-08-11

申请人： ASML NETHERLANDS B.V.

发明人： Yu CAO ,  Wenjin SHAO ,  Ronaldus Johannes Gijsbertus GOOSSENS ,  Jun YE ,  James Patrick KOONMEN

IPC分类号： G06F17/50

CPC分类号： B29C67/0088 ,  B29C64/386 ,  G03F7/70091 ,  G03F7/70458 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G06F17/50 ,  G06F17/5009 ,  G06F17/5081

摘要： Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.

摘要翻译： 描述了过程仿真的系统和方法。 这些方法可以使用标识参考扫描仪对一组可调谐参数的灵敏度的参考模型。 可以使用参考模型来模拟来自芯片设计的芯片制造，其中芯片设计被表示为一个或多个掩模。 可以使用迭代重调和仿真过程来优化模拟芯片中的关键尺寸，并获得模拟芯片与预期芯片的收敛。 此外，可以向设计者提供一组结果，从中创建更新的芯片设计。