公开(公告)号：US20220291590A1

公开(公告)日：2022-09-15

申请号：US17634309

申请日：2020-07-09

申请人： ASML NETHERLANDS B.V.

发明人： Jing SU ,  Yana CHENG ,  Zchenxi LIN ,  Yi ZOU ,  Ddavit HARUTYUNYAN ,  Emil Peter SCHMITT-WEAVER ,  Kaustuve BHATTACHARYYA ,  Cornelis Johannes Henricus LAMBREGTS ,  Hadi YAGUBIZADE

IPC分类号： G03F7/20

摘要： A method for determining a model to predict overlay data associated with a current substrate being patterned. The method involves obtaining (i) a first data set associated with one or more prior layers and/or current layer of the current substrate, (ii) a second data set including overlay metrology data associated with one or more prior substrates, and (iii) de-corrected measured overlay data associated with the current layer of the current substrate; and determining, based on (i) the first data set, (ii) the second data set, and (iii) the de-corrected measured overlay data, values of a set of model parameters associated with the model such that the model predicts overlay data for the current substrate, wherein the values are determined such that a cost function is minimized, the cost function comprising a difference between the predicted data and the de-corrected measured overlay data.

公开(公告)号：US20200380362A1

公开(公告)日：2020-12-03

申请号：US16970648

申请日：2019-02-20

申请人： ASML NETHERLANDS B.V.

发明人： Yu CAO ,  Ya LUO ,  Yen-Wen LU ,  Been-Der CHEN ,  Rafael C. HOWELL ,  Yi ZOU ,  Jing SU ,  Dezheng SUN

IPC分类号： G06N3/08 ,  G06N3/04

摘要： Methods of training machine learning models related to a patterning process, including a method for training a machine learning model configured to predict a mask pattern. The method including obtaining (i) a process model of a patterning process configured to predict a pattern on a substrate, wherein the process model comprises one or more trained machine learning models, and (ii) a target pattern, and training the machine learning model configured to predict a mask pattern based on the process model and a cost function that determines a difference between the predicted pattern and the target pattern.

公开(公告)号：US20220026810A1

公开(公告)日：2022-01-27

申请号：US17297171

申请日：2019-11-14

申请人： ASML NETHERLANDS B.V.

发明人： Nicolaas Petrus Marcus BRANTJES ,  Matthijs COX ,  Boris MENCHTCHIKOV ,  Cyrus Emil TABERY ,  Youping ZHANG ,  Yi ZOU ,  Chenxi LIN ,  Yana CHENG ,  Simon Philip Spencer HASTINGS ,  Maxim Philippe Frederic GENIN

IPC分类号： G03F7/20 ,  G03F9/00 ,  G05B13/02

摘要： A method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method including: obtaining a set of pre-process metrology data; processing the set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed set of pre-process metrology data to determine the correction for the semiconductor manufacturing process.

公开(公告)号：US20210389677A1

公开(公告)日：2021-12-16

申请号：US17295193

申请日：2019-11-04

申请人： ASML NETHERLANDS B.V.

发明人： Chenxi LIN ,  Cyrus Emil TABERY ,  Hakki Ergün CEKLI ,  Simon Philip Spencer HASTINGS ,  Boris MENCHTCHIKOV ,  Yi ZOU ,  Yana CHENG ,  Maxime Philippe Frederic GENIN ,  Tzu-Chao CHEN ,  Davit HARUTYUNYAN ,  Youping ZHANG

IPC分类号： G03F7/20 ,  G05B13/02 ,  G05B19/418 ,  H01L21/66

摘要： A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：US20210216697A1

公开(公告)日：2021-07-15

申请号：US15734141

申请日：2019-05-23

申请人： ASML NETHERLANDS B.V.

发明人： Marinus Aart VAN DEN BRINK ,  Yu CAO ,  Yi ZOU

IPC分类号： G06F30/398 ,  G06F30/392

摘要： A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.

公开(公告)号：US20220335333A1

公开(公告)日：2022-10-20

申请号：US17641159

申请日：2020-08-21

申请人： ASML NETHERLANDS B.V.

发明人： Yu CAO ,  Greggory SCRANTON ,  Jing SU ,  Yi ZOU

IPC分类号： G06N20/00 ,  G03F1/36 ,  G03F7/20 ,  G06N3/04

摘要： Methods of generating a characteristic pattern for a patterning process and training a machine learning model. A method of training a machine learning model configured to generate a characteristic pattern for a mask pattern includes obtaining (i) a reference characteristic pattern that meets a satisfactory threshold related to manufacturing of the mask pattern, and (ii) a continuous transmission mask (CTM) for use in generating the mask pattern; and training, based on the reference characteristic pattern and the CTM, the machine learning model such that a first metric between the characteristic pattern and the CTM, and a second metric between the characteristic pattern and the reference characteristic pattern is reduced.

公开(公告)号：US20220011728A1

公开(公告)日：2022-01-13

申请号：US17293373

申请日：2019-10-30

申请人： ASML NETHERLANDS B.V.

发明人： Youping ZHANG ,  Boris MENCHTCHIKOV ,  Cyrus Emil TABERY ,  Yi ZOU ,  Chenxi LIN ,  Yana CHENG ,  Simon Philip Spencer HASTINGS ,  Maxime Philippe Frederic GENIN

IPC分类号： G05B13/04 ,  G05B13/02 ,  G06F30/27 ,  G06F30/10 ,  G06N3/08 ,  G06N3/04

摘要： A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.

公开(公告)号：US20180259857A1

公开(公告)日：2018-09-13

申请号：US15573832

申请日：2016-04-29

申请人： ASML Netherlands B.V.

发明人： Yi ZOU

IPC分类号： G03F7/20 ,  G06T7/90 ,  G06T11/00

摘要： A method includes obtaining a sub-layout having an area that is a performance limiting spot, adjusting colors of patterns in the area, and determining whether the area is still a performance limiting spot. Another method includes decomposing patterns in a design layout into multiple sub-layouts; determining for at least one area in one of the sub-layouts, the likelihood of that a figure of merit is beyond its allowed range; and if the likelihood is above a threshold, that one sub-layout has a performance limiting spot. Another method includes: obtaining a design layout having a first group of patterns and a second group of patterns, wherein colors of the first group of patterns are not allowed to change and colors of the second group of patterns are allowed to change; and co-optimizing at least the first group of patterns, the second group of patterns and an illumination of a lithographic apparatus.

公开(公告)号：US20210397172A1

公开(公告)日：2021-12-23

申请号：US17296316

申请日：2019-10-30

申请人： ASML NETHERLANDS B.V.

发明人： Abraham SLACHTER ,  Wim Tjibbo TEL ,  Daan Maurits SLOTBOOM ,  Vadim Yourievich TIMOSHKOV ,  Koen Wilhelmus Cornelis Adrianus VAN DER STRATEN ,  Boris MENCHTCHIKOV ,  Simon Philip Spencer HASTINGS ,  Cyrus Emil TABERY ,  Maxime Philippe Frederic GENIN ,  Youping ZHANG ,  Yi ZOU ,  Chenxi LIN ,  Yana CHENG

IPC分类号： G05B19/418

摘要： A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.

公开(公告)号：US20210048753A1

公开(公告)日：2021-02-18

申请号：US16976492

申请日：2019-02-28

申请人： ASML NETHERLANDS B.V.

发明人： Quan ZHANG ,  Been-Der CHENG ,  Rafael C. HOWELL ,  Jing SU ,  Yi ZOU ,  Yen-Wen LU

IPC分类号： G03F7/20 ,  G03F1/36 ,  G03F1/70

摘要： A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.