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公开(公告)号：US20210191278A1
公开(公告)日：2021-06-24
申请号：US17197167
申请日：2021-03-10
发明人： Wim Tjibbo TEL , Bart Peter Bert SEGERS , Everhardus Cornelis MOS , Emil Peter SCHMITT-WEAVER , Yichen ZHANG , Petrus Gerardus VAN RHEE , Xing Lan LIU , Maria KILITZIRAKI , Reiner Maria JUNGBLUT , Hyunwoo YU
摘要： A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号：US20200081353A1
公开(公告)日：2020-03-12
申请号：US16493835
申请日：2018-03-28
发明人： Hubertus Johannes Gertrudus SIMONS , Everhardus Cornelis MOS , Xiuhong WEI , Reza MAHMOODI BARAM , Hadi YAGUBIZADE , Yichen ZHANG
IPC分类号： G03F7/20
摘要： A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.
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公开(公告)号：US20220260925A1
公开(公告)日：2022-08-18
申请号：US17738093
申请日：2022-05-06
发明人： Wim Tjibbo TEL , Bart Peter Bert SEGERS , Everhardus Cornelis MOS , Emil Peter SCHMITT-WEAVER , Yichen ZHANG , Petrus Gerardus VAN RHEE , Xing Lan LIU , Maria KILITZIRAKI , Reiner Maria JUNGBLUT , Hyunwoo YU
摘要： A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号：US20210255547A1
公开(公告)日：2021-08-19
申请号：US16973395
申请日：2019-05-20
发明人： Jeroen Van Dongen , Wim Tjibbo TEL , Sarathi ROY , Yichen ZHANG , Andrea CAVALLI , Bart Laurens SJENITZER , Simon Philip Spencer HASTINGS
IPC分类号： G03F7/20
摘要： A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.
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公开(公告)号：US20220334503A1
公开(公告)日：2022-10-20
申请号：US17640880
申请日：2020-08-11
发明人： Yingchao CUI , Hadi YAGUBIZADE , Xiuhong WEI , Daan Maurits SLOTBOOM , Jeonghyun PARK , Sarathi ROY , Yichen ZHANG , Mohammad Reza KAMALI , Sang Uk KIM
IPC分类号： G03F7/20
摘要： A method for determining lithographic matching performance includes obtaining first monitoring data from recurrent monitoring for stability control for an available EUV scanner. For a DUV scanner, second monitoring data is similarly obtained from recurrent monitoring for stability control. The EUV first monitoring data are in a first layout. The DUV second monitoring data are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing the first and/or second monitoring data into a common layout to allow comparison of the first and second monitoring data.
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公开(公告)号：US20210407112A1
公开(公告)日：2021-12-30
申请号：US17289874
申请日：2019-09-23
发明人： Wim Tjibbo TEL , Antoine Gaston Marie KIERS , Vadim Yourievich TIMOSHKOV , Hermanus Adrianus DILLEN , Yichen ZHANG , Te-Sheng WANG , Tzu-Chao CHEN
摘要： A method for determining an image-metric of features on a substrate, the method including: obtaining a first image of a plurality of features on a substrate; obtaining one or more further images of a corresponding plurality of features on the substrate, wherein at least one of the one or more further images is of a different layer of the substrate than the first image; generating aligned versions of the first and one or more further images by performing an alignment process on the first and one or more further images; and calculating an image-metric in dependence on a comparison of the features in the aligned version of the first image and the corresponding features in the one or more aligned versions of the one or more further images.
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公开(公告)号：US20200371441A1
公开(公告)日：2020-11-26
申请号：US16959736
申请日：2018-12-17
发明人： Wim Tjibbo TEL , Yichen ZHANG , Sarathi ROY
摘要： A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.
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