公开(公告)号：US20100252417A1

公开(公告)日：2010-10-07

申请号：US12754473

申请日：2010-04-05

申请人： Adolph Miller Allen ,  Lara Hawrylchak ,  Zhigang Xie ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Srinivas Gandikota ,  Mei Chang ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Zhenbin Ge

发明人： Adolph Miller Allen ,  Lara Hawrylchak ,  Zhigang Xie ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Srinivas Gandikota ,  Mei Chang ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Zhenbin Ge

IPC分类号： C23C14/34

CPC分类号： C23C14/564 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/548 ,  H01J37/32642 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3455

摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

摘要翻译： 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：US20110036709A1

公开(公告)日：2011-02-17

申请号：US12850312

申请日：2010-08-04

申请人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

发明人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

IPC分类号： C23C14/34

CPC分类号： H01L21/67017 ,  C23C14/34 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3447

摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。 过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。 与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

公开(公告)号：US20130087452A1

公开(公告)日：2013-04-11

申请号：US13662391

申请日：2012-10-26

申请人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammed M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

发明人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammed M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

IPC分类号： H01L21/67

CPC分类号： H01L21/67017 ,  C23C14/34 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3447

摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

公开(公告)号：US20090239378A1

公开(公告)日：2009-09-24

申请号：US12050419

申请日：2008-03-18

申请人： KEYVAN KASHEFIZADEH ,  Zhigang Xie ,  Ashish S. Bodke ,  Mei Chang

发明人： KEYVAN KASHEFIZADEH ,  Zhigang Xie ,  Ashish S. Bodke ,  Mei Chang

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C14/0036 ,  C23C14/0641 ,  C23C14/351 ,  H01L21/2855 ,  H01L21/7685

摘要： Methods for forming titanium nitride layers are provided herein. In some embodiments, a method of forming a titanium nitride layer on a substrate may include providing a substrate into a processing chamber having a target comprising titanium disposed therein; supplying a nitrogen-containing gas into the processing chamber; sputtering a titanium source material from the target in the presence of a plasma formed from the nitrogen-containing gas to deposit a titanium nitride layer on the substrate; and upon depositing the titanium nitride layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate.

摘要翻译： 本文提供了形成氮化钛层的方法。 在一些实施例中，在衬底上形成氮化钛层的方法可以包括将衬底提供到具有设置在其中的钛的靶的处理室中; 向处理室供应含氮气体; 在由含氮气体形成的等离子体存在下溅射钛源材料，以在衬底上沉积氮化钛层; 并且在将氮化钛层沉积到所需厚度之后，形成使处理室中的离子偏离衬底的磁场。

公开(公告)号：US09399812B2

公开(公告)日：2016-07-26

申请号：US13270276

申请日：2011-10-11

申请人： Zhigang Xie ,  Mei Chang

发明人： Ashish Subhash Bodke ,  Zhigang Xie ,  Mei Chang

IPC分类号： C23C14/00 ,  C23C14/32 ,  C23C14/04 ,  C23C14/06 ,  C23C14/16 ,  C23C14/34 ,  H01L21/683

CPC分类号： C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/3492 ,  H01L21/6831

摘要： Methods for processing substrates are provided herein. In some embodiments, a method of processing a substrate within a process chamber having an electrostatic chuck to support a substrate in a processing region of the process chamber and a target disposed opposite the electrostatic chuck, wherein the target comprises a target material to be deposited on the substrate, may include disposing a substrate on the electrostatic chuck; providing a process gas to the processing region; igniting a plasma in the processing region from the process gas while the substrate is disposed on the electrostatic chuck with no chucking voltage provided to clamp the substrate to the electrostatic chuck; and depositing target material on the substrate to form a first barrier layer while no chucking voltage is provided, wherein the target material is sputtered from the target via the plasma.

摘要翻译： 本文提供了处理基板的方法。 在一些实施例中，一种在具有静电卡盘的处理室内处理衬底以在处理室的处理区域中支撑衬底和与静电卡盘相对设置的靶的处理衬底的方法，其中所述靶包括待沉积在靶材料上的靶材料 基板可以包括将基板设置在静电卡盘上; 向处理区域提供处理气体; 在将基板设置在静电卡盘上而没有提供夹持电压以将基板夹持到静电卡盘的同时，将来自处理气体的处理区域中的等离子体点燃; 以及在基板上沉积目标材料以形成第一阻挡层，同时不提供夹持电压，其中目标材料经由等离子体从靶溅射。

公开(公告)号：US07846824B2

公开(公告)日：2010-12-07

申请号：US12050419

申请日：2008-03-18

申请人： Keyvan Kashefizadeh ,  Zhigang Xie ,  Ashish S. Bodke ,  Mei Chang

发明人： Keyvan Kashefizadeh ,  Zhigang Xie ,  Ashish S. Bodke ,  Mei Chang

IPC分类号： H01L21/22

CPC分类号： H01L21/76843 ,  C23C14/0036 ,  C23C14/0641 ,  C23C14/351 ,  H01L21/2855 ,  H01L21/7685

摘要： Methods for forming titanium nitride layers are provided herein. In some embodiments, a method of forming a titanium nitride layer on a substrate may include providing a substrate into a processing chamber having a target comprising titanium disposed therein; supplying a nitrogen-containing gas into the processing chamber; sputtering a titanium source material from the target in the presence of a plasma formed from the nitrogen-containing gas to deposit a titanium nitride layer on the substrate; and upon depositing the titanium nitride layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate.

摘要翻译： 本文提供了形成氮化钛层的方法。 在一些实施例中，在衬底上形成氮化钛层的方法可以包括将衬底提供到具有设置在其中的钛的靶的处理室中; 向处理室供应含氮气体; 在由含氮气体形成的等离子体存在下溅射钛源材料，以在衬底上沉积氮化钛层; 并且在将氮化钛层沉积到所需厚度之后，形成使处理室中的离子偏离衬底的磁场。

公开(公告)号：US20130298973A1

公开(公告)日：2013-11-14

申请号：US13601521

申请日：2012-08-31

申请人： Zhigang Xie ,  Jiunn Benjamin Heng ,  Jianming Fu ,  Zheng Xu

发明人： Zhigang Xie ,  Jiunn Benjamin Heng ,  Jianming Fu ,  Zheng Xu

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035272 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： One embodiment of the present invention provides a tunneling junction solar cell. The solar cell includes a base layer, an emitter layer situated adjacent to the shallow counter doping layer, a surface field layer situated adjacent to a side of the base layer opposite to the shallow counter doping layer, a front-side electrode, and a back-side electrode. The base layer includes a shallow counter doping layer having a conduction doping type that is opposite to a remainder of the base layer. The emitter layer has a bandgap that is wider than that of the base layer.

摘要翻译： 本发明的一个实施例提供一种隧道结太阳能电池。 太阳能电池包括基底层，位于浅反相掺杂层附近的发射极层，位于与浅反相掺杂层相对的基底层侧面附近的表面场层，前侧电极和背面 侧电极。 基层包括具有与基层的其余部分相反的导电掺杂类型的浅反掺杂层。 发射极层具有比基底层宽的带隙。

公开(公告)号：US20120318340A1

公开(公告)日：2012-12-20

申请号：US13601441

申请日：2012-08-31

申请人： Jiunn Benjamin Heng ,  Jianming Fu ,  Zheng Xu ,  Zhigang Xie

发明人： Jiunn Benjamin Heng ,  Jianming Fu ,  Zheng Xu ,  Zhigang Xie

IPC分类号： H01L31/0264 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/20 ,  H01L31/0248 ,  H01L31/0376

CPC分类号： H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： One embodiment of the present invention provides a back junction solar cell. The solar cell includes a base layer, a quantum-tunneling-barrier (QTB) layer situated below the base layer facing away from incident light, an emitter layer situated below the QTB layer, a front surface field (FSF) layer situated above the base layer, a front-side electrode situated above the FSF layer, and a back-side electrode situated below the emitter layer.

摘要翻译： 本发明的一个实施例提供一种背结太阳能电池。 太阳能电池包括基底层，位于基底层的背离入射光的量子隧道势垒（QTB）层，位于QTB层下面的发射极层，位于基底之上的前表面场（FSF）层 层，位于FSF层上方的前侧电极和位于发射极层下方的背面电极。