Ion sources
    4.
    发明申请
    Ion sources 有权
    离子源

    公开(公告)号:US20050211923A1

    公开(公告)日:2005-09-29

    申请号:US10857449

    申请日:2004-06-01

    申请人: Peter Banks

    发明人: Peter Banks

    IPC分类号: H01J27/08 H01J37/08 H01J37/32

    摘要: The invention relates to methods of controlling the effect of ions of an ionisable source gas that can react with interior surfaces of an arc chamber, by introducing ions of a displacement gas into the arc chamber, where the displacement gas ions are more chemically reactive with the material of the interior surfaces than the ions of the source gas. The source gas ions may typically be oxygen ions and the displacement gas ions are then typically fluorine ions where the interior surfaces comprise tungsten. The fluorine ions may, by way of example, be sourced from fluorine, silicon tetrafluoride or nitrogen trifluoride.

    摘要翻译: 本发明涉及通过将置换气体的离子引入电弧室来控制可与电弧室的内表面反应的可离子化源气体的离子的影响的方法,其中置换气体离子与 内表面的材料比源气体的离子。 源气体离子通常可以是氧离子,而置换气体离子通常是氟离子,其中内表面包括钨。 例如,氟离子可以来自氟,四氟化硅或三氟化氮。