WIRING STRUCTURE
    1.
    发明申请

    公开(公告)号:US20210327796A1

    公开(公告)日:2021-10-21

    申请号:US16853396

    申请日:2020-04-20

    摘要: A wiring structure is provided. The wiring structure includes an upper redistribution structure, a lower redistribution structure, a conductive structure, an upper bonding layer and a lower bonding layer. The conductive structure is disposed between and electrically connected to the upper redistribution structure and the lower redistribution structure. The upper bonding layer is disposed between the upper redistribution structure and the conductive structure to bond the upper redistribution structure and the conductive structure together. The lower bonding layer is disposed between the lower redistribution structure and the conductive structure to bond the lower redistribution structure and the conductive structure together.

    SEMICONDUCTOR DEVICE PACKAGE
    2.
    发明申请

    公开(公告)号:US20200211863A1

    公开(公告)日:2020-07-02

    申请号:US16813364

    申请日:2020-03-09

    摘要: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate. A distance between the second surface of the substrate and an extension of the second surface of the semiconductor device on the first surface of the substrate is less than or equal to twice a distance between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate extends along at least three sides of the semiconductor device.