公开(公告)号：US07658800B2

公开(公告)日：2010-02-09

申请号：US11602568

申请日：2006-11-20

申请人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

发明人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

摘要翻译： 描述了半导体工件处理反应器，其包括限定沉积区域的处理室; 基座，其在所述处理室的所述沉积区域内支撑并移动待处理的半导体工件; 以及气体分配组件，其安装在所述处理室内并且限定彼此分离的第一和第二反应气体通道，并且将两个反应气体输送到位于所述气体分配组件附近的半导体工件。

公开(公告)号：US20080092815A1

公开(公告)日：2008-04-24

申请号：US11602568

申请日：2006-11-20

申请人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

发明人： AiHua Chen ,  Shulin Wang ,  Henry Ho ,  Gerald Yin ,  Qing Lv ,  Li Fu

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

摘要翻译： 描述了半导体工件处理反应器，其包括限定沉积区域的处理室; 基座，其在所述处理室的所述沉积区域内支撑并移动待处理的半导体工件; 以及气体分配组件，其安装在处理室内并且限定彼此分离的第一和第二反应气体通道，并将两个反应气体输送到位于气体分配组件附近的半导体工件。

公开(公告)号：US20070166459A1

公开(公告)日：2007-07-19

申请号：US11361950

申请日：2006-02-23

申请人： Frank Chang ,  Henry Ho ,  Shulin Wang ,  Li Fu ,  Qing Lv

发明人： Frank Chang ,  Henry Ho ,  Shulin Wang ,  Li Fu ,  Qing Lv

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An assembly and method for delivering a reactant material onto a substrate is described and which includes a delivery member which has a first surface, and an opposite second surface, and wherein the second surface is positioned adjacent to a substrate, and wherein an elongated substantially continuous channel is formed in the second surface of the delivery member, and which is coupled in fluid flowing relation relative to a source of reactant material, and wherein the elongated substantially continuous channel delivers the reactant material onto the substrate.

摘要翻译： 描述了用于将反应物材料递送到基底上的组件和方法，其包括具有第一表面和相对的第二表面的递送构件，并且其中第二表面邻近基底定位，并且其中细长的基本上连续的 通道形成在输送构件的第二表面中，并且相对于反应物材料源以流体流动的关系联接，并且其中细长的基本上连续的通道将反应物材料输送到基底上。

公开(公告)号：US20060024926A1

公开(公告)日：2006-02-02

申请号：US11229224

申请日：2005-09-16

申请人： Li Fu ,  Sheeba Panayil ,  Shulin Wang ,  Christopher Quentin ,  Lee Luo ,  Aihua Chen ,  Zianzhi Tao

发明人： Li Fu ,  Sheeba Panayil ,  Shulin Wang ,  Christopher Quentin ,  Lee Luo ,  Aihua Chen ,  Zianzhi Tao

IPC分类号： H01L21/20

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.

摘要翻译： 形成轻掺磷硅膜的方法。 提供基板。 使用包含磷源气体和乙硅烷气体的工艺气体在衬底上形成轻掺磷硅膜。 稀释的磷源气体的磷浓度为1％。 磷源气体和乙硅烷气体的流量比小于1:100。 轻掺磷硅膜的磷掺杂浓度小于1×10 20原子/ cm 3。

公开(公告)号：US06982214B2

公开(公告)日：2006-01-03

申请号：US10263105

申请日：2002-10-01

申请人： Li Fu ,  Sheeba J. Panayil ,  Shulin Wang ,  Christopher G. Quentin ,  Lee Luo ,  Aihua Chen ,  Xianzhi Tao

发明人： Li Fu ,  Sheeba J. Panayil ,  Shulin Wang ,  Christopher G. Quentin ,  Lee Luo ,  Aihua Chen ,  Xianzhi Tao

IPC分类号： H01L21/20

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.

摘要翻译： 形成轻掺磷硅膜的方法。 提供基板。 使用包含磷源气体和乙硅烷气体的工艺气体在衬底上形成轻掺磷硅膜。 稀释的磷源气体的磷浓度为1％。 磷源气体和乙硅烷气体的流量比小于1:100。 轻掺磷硅膜的磷掺杂浓度小于1×10 20原子/ cm 3。

公开(公告)号：US07335266B2

公开(公告)日：2008-02-26

申请号：US11229224

申请日：2005-09-16

申请人： Li Fu ,  Sheeba J. Panayil ,  Shulin Wang ,  Christopher G. Quentin ,  Lee Luo ,  Aihua Chen ,  Xianzhi Tao

发明人： Li Fu ,  Sheeba J. Panayil ,  Shulin Wang ,  Christopher G. Quentin ,  Lee Luo ,  Aihua Chen ,  Xianzhi Tao

IPC分类号： C23C16/52 ,  C23C16/00 ,  G06F19/00 ,  C23C16/22 ,  C23C16/24

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.

摘要翻译： 形成轻掺磷硅膜的方法。 提供基板。 使用包含磷源气体和乙硅烷气体的工艺气体在衬底上形成轻掺磷硅膜。 稀释的磷源气体的磷浓度为1％。 磷源气体和乙硅烷气体的流量比小于1:100。 轻掺磷硅膜的磷掺杂浓度小于1×10 20原子/ cm 3。

公开(公告)号：US20070020924A1

公开(公告)日：2007-01-25

申请号：US11532114

申请日：2006-09-15

申请人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

发明人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

IPC分类号： H01L21/4763

CPC分类号： C23C16/45527 ,  C23C16/02 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28061 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76841 ,  H01L27/10861 ,  H01L28/60 ,  H01L29/4941 ,  H01L29/66181

摘要： In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

摘要翻译： 在一个实施例中，提供了一种在衬底上形成钨阻挡材料的方法，其包括在气相沉积工艺期间在衬底上沉积钨层并将衬底依次暴露于钨前体和氮前体以形成氮化钨层 在钨层上。 一些实施例提供可以在原子层沉积工艺期间通过依次将基底暴露于钨前体和还原气体（例如乙硼烷或硅烷）来沉积钨层。 钨层的厚度可以为约或者更小，并且氮化钨层的电阻率可以为约380μΩ·cm以下。 其它实例提供了通过化学气相沉积工艺在钨氮化物层上沉积钨体层。

公开(公告)号：US07115499B2

公开(公告)日：2006-10-03

申请号：US11003020

申请日：2004-12-01

申请人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

发明人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

IPC分类号： H01L21/4763

CPC分类号： C23C16/45527 ,  C23C16/02 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28061 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76841 ,  H01L27/10861 ,  H01L28/60 ,  H01L29/4941 ,  H01L29/66181

摘要： A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.

公开(公告)号：US20050176240A1

公开(公告)日：2005-08-11

申请号：US11003020

申请日：2004-12-01

申请人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

发明人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/4763

CPC分类号： C23C16/45527 ,  C23C16/02 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28061 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76841 ,  H01L27/10861 ,  H01L28/60 ,  H01L29/4941 ,  H01L29/66181

摘要： A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.

摘要翻译： 提供了一种用于沉积氮化钨层的方法。 该方法包括在基材上交替吸附含钨化合物和含氮化合物的循环过程。 阻挡层具有降低的电阻率，较低的氟浓度，并且可以以任何期望的厚度（例如小于100埃）沉积以使阻挡层材料的量最小化。

公开(公告)号：US20080305629A1

公开(公告)日：2008-12-11

申请号：US12195263

申请日：2008-08-20

申请人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

发明人： Shulin Wang ,  Ulrich Kroemer ,  Lee Luo ,  Aihua Chen ,  Ming Li

IPC分类号： H01L21/4763

CPC分类号： C23C16/45527 ,  C23C16/02 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28061 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76841 ,  H01L27/10861 ,  H01L28/60 ,  H01L29/4941 ,  H01L29/66181

摘要： In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

摘要翻译： 在一个实施例中，提供了一种在衬底上形成钨阻挡材料的方法，其包括在气相沉积工艺期间在衬底上沉积钨层并将衬底依次暴露于钨前体和氮前体以形成氮化钨层 在钨层上。 一些实施例提供可以在原子层沉积工艺期间通过依次将基底暴露于钨前体和还原气体（例如乙硼烷或硅烷）来沉积钨层。 钨层的厚度可以为约或者更小，并且氮化钨层的电阻率可以为约380μΩ·cm以下。 其它实例提供了通过化学气相沉积工艺在钨氮化物层上沉积钨体层。