公开(公告)号：US08587124B2

公开(公告)日：2013-11-19

申请号：US12156822

申请日：2008-06-04

申请人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L23/48

CPC分类号： H01L23/5226 ,  H01L21/78 ,  H01L23/296 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/525 ,  H01L23/528 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L24/14 ,  H01L24/94 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/12105 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/274 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/03

摘要： A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films and wiring lines, the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the structure portion. A connection pad portion is arranged on the insulating film and connected to an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film made of an organic resin is provided on a part of the insulating film which surrounds the pump electrode. Side surfaces of the laminated structure portion are covered with the insulating film and/or the sealing film.

公开(公告)号：US20090079073A1

公开(公告)日：2009-03-26

申请号：US12156822

申请日：2008-06-04

申请人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L21/58 ,  H01L23/488

CPC分类号： H01L23/5226 ,  H01L21/78 ,  H01L23/296 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/525 ,  H01L23/528 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L24/14 ,  H01L24/94 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/12105 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/274 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/03

摘要： A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films and wiring lines, the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the structure portion. A connection pad portion is arranged on the insulating film and connected to an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film made of an organic resin is provided on a part of the insulating film which surrounds the pump electrode. Side surfaces of the laminated structure portion are covered with the insulating film and/or the sealing film.

摘要翻译： 半导体器件包括除了其外围部分之外设置有结构部分的半导体衬底，并且具有包括低电介质膜和布线的层压结构，所述低介电膜的相对介电常数为3.0以下，玻璃化转变 温度在400℃以上。 在结构部分上形成绝缘膜。 连接焊盘部分布置在绝缘膜上并连接到层压结构部分的最上面的布线。 凸起电极设置在连接焊盘部分上。 在围绕泵电极的绝缘膜的一部分上设置由有机树脂制成的密封膜。 层叠结构部分的侧表面被绝缘膜和/或密封膜覆盖。

公开(公告)号：US20090079072A1

公开(公告)日：2009-03-26

申请号：US12001878

申请日：2007-12-13

申请人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L23/488 ,  H01L21/58

CPC分类号： H01L24/12 ,  H01L23/3114 ,  H01L23/525 ,  H01L24/11 ,  H01L24/94 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05569 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/274 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00014

摘要： A semiconductor device includes a semiconductor substrate having an integrated circuit. A low dielectric film wiring line laminated structure portion is provided on the semiconductor substrate except a peripheral portion thereof, and is constituted by low dielectric films and wiring lines. The low dielectric film has a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the laminated structure portion. A connection pad portion is arranged on the insulating film and connected to a connection pad portion of an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film is provided on the insulating film which surrounds the pump electrode and on the peripheral portion of the semiconductor substrate. The side surfaces of the laminated structure portion are covered with the insulating film or the sealing film.

摘要翻译： 半导体器件包括具有集成电路的半导体衬底。 低电介质膜布线层叠结构部分设置在半导体衬底的周边部分以外，由低电介质膜和布线构成。 低电介质膜的相对介电常数为3.0以下，玻璃化转变温度为400℃以上。 绝缘膜形成在层叠结构部分上。 连接焊盘部分布置在绝缘膜上并且连接到层压结构部分的最上面布线的连接焊盘部分。 凸起电极设置在连接焊盘部分上。 在绝缘膜上设置密封膜，该绝缘膜围绕泵电极和半导体衬底的周边部分。 层叠结构部分的侧表面被绝缘膜或密封膜覆盖。

公开(公告)号：US20070267743A1

公开(公告)日：2007-11-22

申请号：US11638717

申请日：2006-12-14

申请人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi

发明人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi

IPC分类号： H01L23/48

CPC分类号： H01L23/525 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/5329 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L24/94 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/18301 ,  H01L2924/30105

摘要： A semiconductor device includes a semiconductor substrate and low dielectric film wiring line laminated structure portions which are provided in regions on the semiconductor substrate except a peripheral portion thereof. Each of the laminated structure portions has a laminated structure of low dielectric films and a plurality of wiring lines. An insulating film is provided on an upper side of the laminated structure portion. Connection pad portions for electrodes are arranged on the insulating film to be electrically connected to the connection pad portions of uppermost wiring lines of the laminated structure portion. Bump electrodes for external connection are provided on the connection pad portions for the electrodes. A sealing film is provided on the insulating film and on the peripheral portion of the semiconductor substrate. Side surfaces of the laminated structure portions are covered with the insulating film or the sealing film.

摘要翻译： 半导体器件包括半导体衬底和低电介质膜布线层叠结构部分，它们设置在除了其周边部分之外的半导体衬底上的区域中。 各层叠结构部分具有低电介质膜和多条布线的叠层结构。 绝缘膜设置在层叠结构部的上侧。 用于电极的连接焊盘部分布置在绝缘膜上以电连接到层叠结构部分的最上布线的连接焊盘部分。 用于外部连接的凸起电极设置在用于电极的连接焊盘部分上。 在绝缘膜上和半导体衬底的周边部分上设置密封膜。 层叠结构部分的侧表面被绝缘膜或密封膜覆盖。

公开(公告)号：US07816790B2

公开(公告)日：2010-10-19

申请号：US11638717

申请日：2006-12-14

申请人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi

发明人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi

IPC分类号： H01L23/48

CPC分类号： H01L23/525 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/5329 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L24/94 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/18301 ,  H01L2924/30105

摘要： A semiconductor device includes a semiconductor substrate and low dielectric film wiring line laminated structure portions which are provided in regions on the semiconductor substrate except a peripheral portion thereof. Each of the laminated structure portions has a laminated structure of low dielectric films and a plurality of wiring lines. An insulating film is provided on an upper side of the laminated structure portion. Connection pad portions for electrodes are arranged on the insulating film to be electrically connected to the connection pad portions of uppermost wiring lines of the laminated structure portion. Bump electrodes for external connection are provided on the connection pad portions for the electrodes. A sealing film is provided on the insulating film and on the peripheral portion of the semiconductor substrate. Side surfaces of the laminated structure portions are covered with the insulating film or the sealing film.

摘要翻译： 半导体器件包括半导体衬底和低电介质膜布线层叠结构部分，它们设置在除了其周边部分之外的半导体衬底上的区域中。 各层叠结构部分具有低电介质膜和多条布线的叠层结构。 绝缘膜设置在层叠结构部的上侧。 用于电极的连接焊盘部分布置在绝缘膜上以电连接到层叠结构部分的最上布线的连接焊盘部分。 用于外部连接的凸起电极设置在用于电极的连接焊盘部分上。 在绝缘膜上和半导体衬底的周边部分上设置密封膜。 层叠结构部分的侧表面被绝缘膜或密封膜覆盖。

公开(公告)号：US07592672B2

公开(公告)日：2009-09-22

申请号：US11729650

申请日：2007-03-29

申请人： Takeshi Wakabayashi ,  Ichiro Mihara ,  Osamu Okada

发明人： Takeshi Wakabayashi ,  Ichiro Mihara ,  Osamu Okada

IPC分类号： H01L29/04

CPC分类号： H01L29/78639 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/492 ,  H01L23/50 ,  H01L24/16 ,  H01L24/24 ,  H01L24/73 ,  H01L24/82 ,  H01L24/91 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/16225 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/24998 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/82007 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/07811 ,  H01L2924/10156 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05599

摘要： A circuit substrate of a grounding structure of a semiconductor device according to the invention has a plurality of connection pads and a grounding wiring. The semiconductor device has a semiconductor substrate having one side face and the other side face opposite thereto, an insulating film formed thereon, an SOI integrated circuit provided thereon and including a plurality of connection pads, and electrodes for external connection each of which is connected to the corresponding connection pad. The semiconductor device has the external connection electrodes connected to the respective connection pads of the circuit substrate by a face-down bonding scheme. An under-filling material is provided between the semiconductor device and the circuit substrate, and there is provided a connection member which connects the other side face of the semiconductor device with the grounding wiring of the circuit substrate, and is made of a conductive material.

摘要翻译： 根据本发明的半导体器件的接地结构的电路基板具有多个连接焊盘和接地布线。 半导体器件具有一个半导体衬底，其具有一个侧面，另一个侧面与其相对，形成在其上的绝缘膜，设置在其上的SOI集成电路，并且包括多个连接焊盘，以及用于外部连接的电极， 相应的连接板。 半导体器件具有通过面向下接合方案连接到电路衬底的各个连接焊盘的外部连接电极。 在半导体器件和电路基板之间设置有填充不足的材料，并且设置有将半导体器件的另一个侧面与电路基板的接地布线连接的连接部件，并且由导电材料制成。

公开(公告)号：US20070228468A1

公开(公告)日：2007-10-04

申请号：US11729650

申请日：2007-03-29

申请人： Takeshi Wakabayashi ,  Ichiro Mihara ,  Osamu Okada

发明人： Takeshi Wakabayashi ,  Ichiro Mihara ,  Osamu Okada

IPC分类号： H01L27/12

CPC分类号： H01L29/78639 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/492 ,  H01L23/50 ,  H01L24/16 ,  H01L24/24 ,  H01L24/73 ,  H01L24/82 ,  H01L24/91 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/16225 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/24998 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/82007 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/07811 ,  H01L2924/10156 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05599

摘要： A circuit substrate of a grounding structure of a semiconductor device according to the invention has a plurality of connection pads and a grounding wiring. The semiconductor device has a semiconductor substrate having one side face and the other side face opposite thereto, an insulating film formed thereon, an SOI integrated circuit provided thereon and including a plurality of connection pads, and electrodes for external connection each of which is connected to the corresponding connection pad. The semiconductor device has the external connection electrodes connected to the respective connection pads of the circuit substrate by a face-down bonding scheme. An under-filling material is provided between the semiconductor device and the circuit substrate, and there is provided a connection member which connects the other side face of the semiconductor device with the grounding wiring of the circuit substrate, and is made of a conductive material.

摘要翻译： 根据本发明的半导体器件的接地结构的电路基板具有多个连接焊盘和接地布线。 半导体器件具有一个半导体衬底，其具有一个侧面，另一个侧面与其相对，形成在其上的绝缘膜，设置在其上的SOI集成电路，并且包括多个连接焊盘，以及用于外部连接的电极， 相应的连接板。 半导体器件具有通过面向下接合方案连接到电路衬底的各个连接焊盘的外部连接电极。 在半导体器件和电路基板之间设置有填充不足的材料，并且设置有将半导体器件的另一个侧面与电路基板的接地布线连接的连接部件，并且由导电材料制成。

公开(公告)号：USRE41511E1

公开(公告)日：2010-08-17

申请号：US11726763

申请日：2007-03-22

申请人： Yutaka Aoki ,  Ichiro Mihara ,  Takeshi Wakabayashi ,  Katsumi Watanabe

发明人： Yutaka Aoki ,  Ichiro Mihara ,  Takeshi Wakabayashi ,  Katsumi Watanabe

IPC分类号： H01L23/522 ,  H01L23/50

CPC分类号： H01L23/3114 ,  H01L23/5223 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/525 ,  H01L2924/0002 ,  H01L2924/1423 ,  H01L2924/19041 ,  H01L2924/00

摘要： In a semiconductor device, re-wiring is provided on a circuit element formation region of a semiconductor substrate. A columnar electrode for connection with a circuit board is provided on the rewiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film. A re-wiring is provided over the ground potential layer with a second insulating film interposed. The ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region. A thin-film circuit element is provided on the second insulating film, and a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed. Re-wiring is provided over the second ground potential layer.

摘要翻译： 在半导体器件中，在半导体衬底的电路元件形成区域上设置再布线。 在重新布线时提供用于与电路板连接的柱状电极。 第一绝缘膜设置在除了连接焊盘之外的半导体衬底上，并且在第一绝缘膜的上表面上设置连接到接地电位的接地电位层。 在地电位层上提供再布线，其中插入有第二绝缘膜。 地电位层用作防止重新布线和电路元件形成区域之间的串扰的阻挡层。 薄膜电路元件设置在第二绝缘膜上，第二接地电位层设置在薄膜电路元件上，作为第二阻挡层，绝缘膜被插入。 在第二接地电位层上提供重新布线。

公开(公告)号：US07368813B2

公开(公告)日：2008-05-06

申请号：US10986532

申请日：2004-11-10

申请人： Shinji Wakisaka ,  Hiroyasu Jobetto ,  Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Shinji Wakisaka ,  Hiroyasu Jobetto ,  Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L23/52

CPC分类号： H01L24/27 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4943 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/07025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A first semiconductor element is mounted on a base plate, and is in a sealed state by the periphery thereof being covered by an insulation member, and the upper surface thereof being covered by an upper insulation film. An upper wiring layer formed on the upper insulation film, and the lower wiring layer formed below the base plate via lower insulation films are connected by conductors. A second semiconductor element is mounted exposed, being connected to the lower wiring layer.

摘要翻译： 第一半导体元件安装在基板上，其周边处于密封状态，被绝缘构件覆盖，其上表面被上绝缘膜覆盖。 通过导体将形成在上绝缘膜上的上布线层和通过下绝缘膜形成在基板下方的下布线层连接。 第二半导体元件被暴露安装，连接到下布线层。

公开(公告)号：US20070123022A1

公开(公告)日：2007-05-31

申请号：US11604028

申请日：2006-11-22

申请人： Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L21/44

CPC分类号： H05K3/3478 ,  H01L24/11 ,  H01L24/94 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/274 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14 ,  H05K2203/041 ,  H05K2203/124 ,  H01L2224/13099 ,  H01L2924/00014

摘要： There is prepared a semiconductor construction in which a plurality of columnar electrodes are provided on an upper side of a semiconductor substrate and in which a sealing film is provided on the semiconductor substrate to cover outer peripheral surfaces of the columnar electrodes. Upper sides of the columnar electrodes are removed to form openings in the sealing film on the supper sides of the columnar electrodes. Adhesive coatings are formed on upper surfaces of the columnar electrodes in the openings of the sealing film, Solder balls are provided on upper surfaces of the adhesive coatings. Finally, the solder balls are deformed by a heat treatment to form solder bumps in and above the openings of the sealing film so that the solder bumps are connected to the upper surfaces of the columnar electrodes. Thus, a semiconductor device is manufactured.

摘要翻译： 制备半导体结构，其中多个柱状电极设置在半导体衬底的上侧，并且其中密封膜设置在半导体衬底上以覆盖柱状电极的外周表面。 柱状电极的上侧被去除，以在柱状电极的旁边的密封膜中形成开口。 粘合剂涂层形成在密封膜的开口中的柱状电极的上表面上，焊球设置在粘合剂涂层的上表面上。 最后，通过热处理使焊球变形，以在密封膜的开口内和上方形成焊料凸块，使得焊料凸块连接到柱状电极的上表面。 因此，制造半导体器件。