公开(公告)号：US20120220195A1

公开(公告)日：2012-08-30

申请号：US13233960

申请日：2011-09-15

申请人： Akifumi GAWASE ,  Yukiteru Matsui

发明人： Akifumi GAWASE ,  Yukiteru Matsui

IPC分类号： B24B51/00

CPC分类号： B24B37/24 ,  B24B37/015

摘要： According to one embodiment, a CMP apparatus includes a supplying portion supplying a slurry to a surface portion of a polishing pad including water-soluble particles, a holding portion contacting an object to be polished with the surface portion of the polishing pad in a condition of holding the object, a temperature setting portion on the surface portion of the polishing pad, the temperature setting portion setting a temperature of the surface of the polishing pad. A control portion executes a first polishing step and a second polishing step after the first polishing step, the object is polished in a condition of setting the temperature of the surface of the polishing pad within a first temperature range in the first polishing step, and the object is polished in a condition of setting the temperature of the surface of the polishing pad within a second temperature range in the second polishing step.

摘要翻译： 根据一个实施例，CMP装置包括供给部分，该供给部分将抛光垫的表面部分提供到包括水溶性颗粒的抛光垫，保持部分与抛光对象物接触抛光垫的表面部分， 保持物体，在抛光垫的表面部分上设置温度设定部分，温度设定部分设定抛光垫表面的温度。 控制部分执行第一抛光步骤之后的第一抛光步骤和第二抛光步骤，在将抛光垫的表面的温度设定在第一抛光步骤中的第一温度范围内的条件下进行抛光，并且 在第二研磨工序中，在将抛光垫的表面的温度设定在第二温度范围内的条件下进行抛光。

公开(公告)号：US08703004B2

公开(公告)日：2014-04-22

申请号：US13423018

申请日：2012-03-16

申请人： Yukiteru Matsui ,  Masako Kodera ,  Hiroshi Tomita ,  Gaku Minamihaba ,  Akifumi Gawase

发明人： Yukiteru Matsui ,  Masako Kodera ,  Hiroshi Tomita ,  Gaku Minamihaba ,  Akifumi Gawase

IPC分类号： C03C15/00

CPC分类号： H01L21/30625 ,  B24B37/044 ,  B24B37/24 ,  H01L21/67075 ,  H01L21/67219

摘要： According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

摘要翻译： 根据一个实施例，公开了用于化学平面化的方法。 该方法可以包括在具有不规则性的待处理膜上形成表面层。 表面层沿着不规则结合或吸附到待处理的膜上以抑制被处理膜的溶解。 该方法可以包括在待处理膜的处理溶液中平面化待处理膜，通过旋转待处理膜和加工体，同时待处理膜与处理体接触 通过表面层除去凹凸部的凸部的表面层，同时将表面层留在凹凸部的凹部上，使凸部的溶解度大于凹部的溶解度。

公开(公告)号：US20130157464A1

公开(公告)日：2013-06-20

申请号：US13603924

申请日：2012-09-05

申请人： Akifumi GAWASE ,  Yukiteru Matsui

发明人： Akifumi GAWASE ,  Yukiteru Matsui

IPC分类号： H01L21/306 ,  B44C1/22

CPC分类号： H01L21/31055 ,  H01L21/28273 ,  H01L21/76275 ,  H01L21/76283

摘要： According to one embodiment, a planarizing method is proposed. In the planarizing method, a surface to be processed of an object to be processed including a silicon oxide film is planarized in a processing solution by bringing the surface to be processed into contact with or close proximity with the surface of a solid-state plate on which fluorine is adsorbed. The bonding energy between fluorine and the solid-state plate is lower than that between fluorine and silicon.

摘要翻译： 根据一个实施例，提出了一种平面化方法。 在平面化方法中，通过使待处理的表面与固态板的表面接触或接近固化板的表面，在处理溶液中对包含氧化硅膜的被处理物进行处理的表面被平坦化 哪些氟被吸附。 氟和固态板之间的结合能低于氟和硅之间的键合能。

公开(公告)号：US08936729B2

公开(公告)日：2015-01-20

申请号：US13603924

申请日：2012-09-05

申请人： Akifumi Gawase ,  Yukiteru Matsui

发明人： Akifumi Gawase ,  Yukiteru Matsui

IPC分类号： H01L21/306 ,  B44C1/22

CPC分类号： H01L21/31055 ,  H01L21/28273 ,  H01L21/76275 ,  H01L21/76283

摘要： According to one embodiment, a planarizing method is proposed. In the planarizing method, a surface to be processed of an object to be processed including a silicon oxide film is planarized in a processing solution by bringing the surface to be processed into contact with or close proximity with the surface of a solid-state plate on which fluorine is adsorbed. The bonding energy between fluorine and the solid-state plate is lower than that between fluorine and silicon.

摘要翻译： 根据一个实施例，提出了一种平面化方法。 在平面化方法中，通过使待处理的表面与固态板的表面接触或接近固化板的表面，在处理溶液中对包含氧化硅膜的被处理物进行处理的表面被平坦化 哪些氟被吸附。 氟和固态板之间的结合能低于氟和硅之间的键合能。

公开(公告)号：US20130095661A1

公开(公告)日：2013-04-18

申请号：US13428163

申请日：2012-03-23

申请人： Akifumi GAWASE ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda

发明人： Akifumi GAWASE ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda

IPC分类号： H01L21/302 ,  B24B53/017 ,  B24B37/015 ,  B24B37/013 ,  B24B37/07

CPC分类号： H01L21/76224 ,  C09G1/02 ,  H01L21/31053

摘要： According to one embodiment, a CMP method includes starting a polishing of a silicon oxide film by using a slurry including a silicon oxide abrasive and a polishing stopper film including a silicon nitride film, and stopping the polishing when the polishing stopper is exposed. The slurry includes a first water-soluble polymer with a weight-average molecular weight of 50000 or more and 5000000 or less, and a second water-soluble polymer with a weight-average molecular weight of 1000 or more and 10000 or less.

摘要翻译： 根据一个实施例，CMP方法包括通过使用包括氧化硅研磨剂的浆料和包括氮化硅膜的抛光阻挡膜来开始研磨氧化硅膜，并且在抛光停止剂暴露时停止抛光。 浆料包括重均分子量为50000以上且5000000以下的第一水溶性聚合物和重均分子量为1000以上且10000以下的第二水溶性聚合物。

公开(公告)号：US20130078784A1

公开(公告)日：2013-03-28

申请号：US13425979

申请日：2012-03-21

申请人： Gaku MINAMIHABA ,  Akifumi Gawase ,  Yukiteru Matsui ,  Hajime Eda

发明人： Gaku MINAMIHABA ,  Akifumi Gawase ,  Yukiteru Matsui ,  Hajime Eda

IPC分类号： H01L21/762 ,  C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76224

摘要： According to one embodiment, the CMP slurry includes abrasive particles made of colloidal silica in an amount of 0.5 to 3% by mass of a total mass of the CMP slurry, and a polycarboxylic acid having a weight average molecular weight of from 500 to 10,000, in an amount of 0.1 to 1% by mass of the total mass of the CMP slurry. 50 to 90% by mass of the abrasive particles each has a primary particle diameter of 3 to 10 nm. The CMP slurry has a pH within a range of 2.5 to 4.5.

摘要翻译： 根据一个实施方案，CMP浆料包括由胶浆二氧化硅制成的磨料颗粒，其量为CMP浆料的总质量的0.5至3质量％，以及重均分子量为500至10,000的多元羧酸， 其量为CMP浆料总质量的0.1〜1质量％。 50〜90质量％的研磨粒子的一次粒径为3〜10nm。 CMP浆料的pH在2.5至4.5的范围内。

公开(公告)号：US20130040456A1

公开(公告)日：2013-02-14

申请号：US13427950

申请日：2012-03-23

申请人： Hajime EDA ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Akifumi Gawase

发明人： Hajime EDA ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Akifumi Gawase

IPC分类号： H01L21/768

CPC分类号： H01L21/7684 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67219

摘要： According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a groove is formed in a insulating film on a semiconductor substrate. An underlayer film is formed on the insulating film. A metal film is formed on the underlayer film. First polishing, in which the metal film is removed, is performed by supplying a first CMP slurry containing metal ions. The surfaces of the polishing pad and the semiconductor substrate are cleaned by supplying organic acid and pure water. Second polishing, in which the underlayer film is removed from the portion other than the groove, is performed by supplying a second CMP slurry different from the first CMP slurry.

摘要翻译： 根据一个实施例，提供一种制造半导体器件的方法。 在该方法中，在半导体衬底上的绝缘膜中形成沟槽。 在绝缘膜上形成下层膜。 在下层膜上形成金属膜。 通过提供含有金属离子的第一CMP浆料来进行其中去除金属膜的第一次抛光。 通过供给有机酸和纯水来清洗抛光垫和半导体基板的表面。 通过供给不同于第一CMP浆料的第二CMP浆料，进行从凹槽以外的部分除去下层膜的第二研磨。

公开(公告)号：US09196501B2

公开(公告)日：2015-11-24

申请号：US13422969

申请日：2012-03-16

申请人： Masako Kodera ,  Yukiteru Matsui

发明人： Masako Kodera ,  Yukiteru Matsui

IPC分类号： B44C1/22 ,  H01L21/302 ,  H01L21/461 ,  H01L21/3105

CPC分类号： H01L21/67086 ,  H01L21/31055 ,  H01L21/67011

摘要： According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.

摘要翻译： 根据一个实施方案，化学平面化方法包括：以饱和浓度制备含有溶解有二氧化硅的氢硅氟酸水溶液的处理液; 并降低二氧化硅膜的不规则高度。 在使二氧化硅的状态下，使凹凸部的溶解率降低，使其处于与凹凸的凸部接触的区域的处理液的平衡状态，同时使凸部的溶解率大于凹凸部的凹部的溶解率 使具有不规则性的膜与处理液接触。

公开(公告)号：US08685857B2

公开(公告)日：2014-04-01

申请号：US12289326

申请日：2008-10-24

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/304 ,  B44C1/22

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm，具有亲水性部分的表面活性剂。

公开(公告)号：US20110294291A1

公开(公告)日：2011-12-01

申请号：US13035546

申请日：2011-02-25

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

IPC分类号： H01L21/768

CPC分类号： H01L21/02697 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76883 ,  H01L27/228

摘要： According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.

摘要翻译： 根据一个实施例，半导体器件包括设置在半导体衬底的表面区域中的开关元件，具有上表面和下表面的接触插塞以及设置在接触插塞的上表面上的功能元件。 接触插头的下表面连接到开关元件。 接触塞的上表面的最大粗糙度为0.2nm以下。