公开(公告)号：US06858877B2

公开(公告)日：2005-02-22

申请号：US10352256

申请日：2003-01-28

申请人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura ,  Nobuyuki Otsuka

发明人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura ,  Nobuyuki Otsuka

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/34333

摘要： A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.

摘要翻译： 在由氮化镓（GaN）制成的基板上形成由至少含有铝的氮化物半导体构成的面形成层。 在小面形成层的表面上形成有相对于C面倾斜的面面，并且从倾斜面面侧向生长选择性生长层。 结果，选择生长层可以使由n型AlGaN制成的n型包覆层基本上晶格匹配并在选择性生长层上生长。 例如，可以通过晶体生长获得没有产生裂纹的激光结构。

公开(公告)号：US06764871B2

公开(公告)日：2004-07-20

申请号：US10465647

申请日：2003-06-20

申请人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura

发明人： Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Ayumu Tsujimura

IPC分类号： H01L2100

CPC分类号： H01L31/0304 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/2003 ,  H01L33/007 ,  Y02E10/544 ,  Y02P70/521

摘要： A method for fabricating a nitride semiconductor device comprising steps of forming a low-temperature deposited layer composed of a Group III-Group V nitride semiconductor containing at least Al onto a surface of substrate (101) at a first temperature; subjecting the low-temperature deposited layer to heat treatment at a second temperature, which is higher than the first temperature, and converting the low-temperature deposited layer into a faceted layer (102); initially growing a GaN based semiconductor layer (103) onto a surface of the faceted layer at a third temperature; and fully growing the GaN based semiconductor layer at a fourth temperature that is lower than the third temperature. By employing the method for fabricating a nitride semiconductor device according to the present invention, it is possible to provide a nitride semiconductor device with high quality and high reliability.

摘要翻译： 一种用于制造氮化物半导体器件的方法，包括以下步骤：在第一温度下将至少包含至少Al的III-V族氮化物半导体组成的低温沉积层形成在衬底（101）的表面上; 使所述低温沉积层在比所述第一温度高的第二温度下进行热处理，并将所述低温沉积层转化为刻面层（102）; 最初在第三温度下将GaN基半导体层（103）生长到所述刻面层的表面上; 以及在低于第三温度的第四温度下完全生长GaN基半导体层。 通过采用本发明的氮化物半导体器件的制造方法，可以提供高品质，高可靠性的氮化物半导体器件。

公开(公告)号：US20100259184A1

公开(公告)日：2010-10-14

申请号：US12279573

申请日：2007-02-15

申请人： Ryou Kato ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Ryou Kato ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01L33/44 ,  H01L27/15 ,  H01L33/02 ,  H05B37/02

CPC分类号： H01L33/20 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/08 ,  H01L33/18 ,  H01L33/22

摘要： A light-emitting device according to the present invention includes a plurality of columnar semiconductors 30 arranged on a GaN substrate 7, and a plurality of protrusions 13 formed on a side face of each columnar semiconductor 30. Each columnar semiconductor 30 has a light-emitting portion composed of a nitride compound semiconductor, and is supported by the GaN substrate 7 at a lower end. The columnar semiconductor 30 has a multilayer structure including an n-cladding layer 9, an active layer 10, and a p-cladding layer 11, the active layer 10 having a multi-quantum well structure in which InWGa1-WN (0

摘要翻译： 根据本发明的发光器件包括布置在GaN衬底7上的多个柱状半导体30和形成在每个柱状半导体30的侧面上的多个突起13.每个柱状半导体30具有发光 部分由氮化物化合物半导体构成，并在下端被GaN衬底7支撑。 柱状半导体30具有包括n包层9，有源层10和p包层11的多层结构，有源层10具有多量子阱结构，其中InWGa1-WN（0

公开(公告)号：US20100118905A1

公开(公告)日：2010-05-13

申请号：US12547906

申请日：2009-08-26

申请人： Tomohito YABUSHITA ,  Yasutoshi Kawaguchi ,  Akio Ueta ,  Akihiko Ishibashi

发明人： Tomohito YABUSHITA ,  Yasutoshi Kawaguchi ,  Akio Ueta ,  Akihiko Ishibashi

IPC分类号： H01S5/00 ,  H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2201 ,  H01S5/3213 ,  H01S2301/18 ,  H01S2304/04

摘要： A nitride semiconductor laser diode includes a substrate of n-type GaN, and a multilayer structure including an n-type cladding layer of AlxGa1-x N (where 0

摘要翻译： 氮化物半导体激光二极管包括n型GaN的衬底和包括形成在衬底的主表面上并与衬底的主表面接触的Al x Ga 1-x N（其中0

公开(公告)号：US07704860B2

公开(公告)日：2010-04-27

申请号：US10597575

申请日：2005-11-15

申请人： Toshitaka Shimamoto ,  Yasutoshi Kawaguchi ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

发明人： Toshitaka Shimamoto ,  Yasutoshi Kawaguchi ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

IPC分类号： H01L21/20

CPC分类号： H01S5/22 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01S5/32341 ,  H01S2304/12

摘要： A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ΣX of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ΣY of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ΣX/ΣY>1.0.

摘要翻译： 根据本发明的氮化物基半导体器件包括支撑在具有导电性的衬底结构101上的半导体多层结构。 衬底结构101的主表面具有至少一个垂直生长区，其起垂直生长氮化物基半导体的晶种的作用，以及用于允许在其上生长的氮化物基半导体的多个横向生长区 垂直生长区域横向生长。 在箭头A所示的方向上测量的垂直生长区域的各自尺寸的总和＆Sgr X以及在相同方向上测量的横向生长区域的各自尺寸的总和＆Sgr; Y满足不等式＆lt; Sgr; X /＆S; Y> 1.0。

公开(公告)号：US20080272462A1

公开(公告)日：2008-11-06

申请号：US10597575

申请日：2005-11-15

申请人： Toshitaka Shimamoto ,  Yasutoshi Kawaguchi ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

发明人： Toshitaka Shimamoto ,  Yasutoshi Kawaguchi ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

IPC分类号： H01L21/20 ,  H01L29/201

CPC分类号： H01S5/22 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01S5/32341 ,  H01S2304/12

摘要： A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ΣX of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ΣY of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ΣX/ΣY>1.0.

摘要翻译： 根据本发明的氮化物基半导体器件包括支撑在具有导电性的衬底结构101上的半导体多层结构。 衬底结构101的主表面具有至少一个垂直生长区，其起垂直生长氮化物基半导体的晶种的作用，以及用于允许在其上生长的氮化物基半导体的多个横向生长区 垂直生长区域横向生长。 在箭头A所指的方向上测量的垂直生长区域的各自尺寸的大小和在相同方向上测量的横向生长区域的各自尺寸的总和SigmaY的和ΣX满足SigmaX / SigmaY> 1.0的不等式。

公开(公告)号：US07338827B2

公开(公告)日：2008-03-04

申请号：US10547968

申请日：2004-03-09

申请人： Gaku Sugahara ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

发明人： Gaku Sugahara ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

IPC分类号： H01L21/00

CPC分类号： H01S5/227 ,  H01S5/0202 ,  H01S5/0421 ,  H01S5/2205 ,  H01S5/32341

摘要： A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively split chip substrates.

摘要翻译： 根据本发明的制造氮化物半导体器件的方法包括以下步骤：（A）提供将被分成芯片衬底的氮化物半导体衬底，其包括当衬底为基底时用作各个芯片衬底的器件部分 将装置部分连接在一起的分割和互连部分，并且其中，所述装置间部分的平均厚度小于所述装置部分的厚度; （B）在氮化物半导体衬底的上表面上限定在器件部分上具有条纹开口的掩模层; （C）在氮化物半导体衬底的上表面的通过掩模层的开口露出的部分上选择性地生长氮化物半导体层; 以及（D）沿着氮化物半导体衬底的间隙部分切割氮化物半导体衬底，从而在分别的芯片衬底上形成氮化物半导体器件。

公开(公告)号：US20070217460A1

公开(公告)日：2007-09-20

申请号：US11568336

申请日：2005-04-20

申请人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Toshitaka Shimamoto ,  Yoshiaki Hasegawa ,  Yasutoshi Kawaguchi ,  Isao Kidoguchi

发明人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Toshitaka Shimamoto ,  Yoshiaki Hasegawa ,  Yasutoshi Kawaguchi ,  Isao Kidoguchi

IPC分类号： H01S5/30 ,  H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3216 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate 101; step (C) of selectively growing AlxGayInzN crystals (0≦x, y, z≦1: x+y+z=1) 104 on the upper faces of the plurality of stripe ridges, the AlxGayInzN crystals containing an n-type impurity at a first concentration; and step (D) of growing an Alx′Gay′Inz′N crystal (0≦x′, y′, z′≦1: x′+y′+z′=1) 106 on the AlxGayInzN crystals 104, the Alx′Gay′Inz′N crystal 106 containing an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlxGayInzN crystals 104 with the Alx′Gay′Inz′N crystal 106 to form one nitride semiconductor layer 120.

摘要翻译： 根据本发明的制造氮化物半导体的方法包括：提供n-GaN衬底101的步骤（A）; 在基板101上形成具有平行于基板101的主面的上表面的多个条纹脊的步骤（B）; 选择性地生长Al x N晶体的步骤（C）（0≤x，y，z <= 1：x + y + z = 1）104，在多个条纹脊的上表面上，含有N，N，N， 第一浓度的n型杂质; 和步骤（D），生长Al 2 O 3 / （0 <= x'，y'，z'<= 1：x'）。 + y'+ z'= 1）106在Al x N y晶体104中，Al x x < 包含低于第一浓度的第二浓度的n型杂质，并且连接每两个相邻的Al x x的子晶体106 在具有Al x Si 2 O 3的N z晶体104中，Ga 3+ 在＆lt; SUB＆gt;＆lt; SUB＆gt;＆lt; / SUB＆gt;＆lt;＆lt;＆lt; 形成一个氮化物半导体层120。

公开(公告)号：US06927149B2

公开(公告)日：2005-08-09

申请号：US10890263

申请日：2004-07-14

申请人： Gaku Sugahara ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Toshiya Yokogawa ,  Atsushi Matsubara

发明人： Gaku Sugahara ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Toshiya Yokogawa ,  Atsushi Matsubara

IPC分类号： H01L21/20 ,  H01S5/02 ,  H01S5/323 ,  H01L21/18 ,  C30B29/38 ,  C30B29/40 ,  H01L29/20 ,  H01L31/0304

CPC分类号： H01S5/32341 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/0265 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/1017 ,  H01S5/22 ,  H01S2304/00 ,  H01S2304/12

摘要： A nitride semiconductor device comprising a substrate (101) having trenches (102b) each formed of a cavity and peaks (102a) formed from a group III nitride on the surface thereof; a nitride semiconductor layer (106) formed on the substrate (101); and a nitride semiconductor multilayered structure that is formed on the nitride semiconductor layer (106) and has an active layer, wherein the lattice constant of the substrate (101) is different from that of the group III nitride substance (102a), the substrate (101) has a mask (104a) formed from a dielectric (104), the mask (104a) is formed only on the side surfaces of the peaks (102a), the upper surfaces of the peaks (102a) are exposed and the substrate (101) is exposed in the trenches (102b), a height L1 of the mask (104a) is not less than 50 nm and not more than 5000 nm, a width L2 of the trench (102b) is not less than 5000 nm and not more than 50000 nm, and an aspect ratio L1/L2 of the trenches (102b) is not less than 0.001 and not more than 1.0. This structure enhances the reliability of the nitride semiconductor devices.

摘要翻译： 一种氮化物半导体器件，包括具有由空腔形成的沟槽（102b）的衬底（101）和在其表面上由III族氮化物形成的峰（102a）; 形成在所述基板（101）上的氮化物半导体层（106） 以及氮化物半导体多层结构，其形成在所述氮化物半导体层上并具有活性层，其中所述衬底（101）的晶格常数与所述III族氮化物物质（102a）的晶格常数不同，所述衬底 （101）具有由电介质（104）形成的掩模（104a），所述掩模（104a）仅形成在所述峰（102a）的侧表面上，所述峰（102a）的上表面 露出并且衬底（101）暴露在沟槽（102b）中，掩模（104a）的高度L 1不小于50nm且不大于5000nm，沟槽（102）的宽度L 2 b）不小于5000nm且不大于50000nm，并且沟槽（102b）的纵横比L 1 / L 2不小于0.001且不大于1.0。 这种结构提高了氮化物半导体器件的可靠性。