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    Method of manufacturing a semiconductor and a semiconductor light-emitting device
    1.
    发明授权
    Method of manufacturing a semiconductor and a semiconductor light-emitting device 失效
    制造半导体和半导体发光器件的方法

    公开(公告)号：US06281522B1

    公开(公告)日：2001-08-28

    申请号：US09243462

    申请日：1999-02-03

    申请人： Akihiko Ishibashi ,  Yuzaburo Ban ,  Yoshihiro Hara ,  Nobuyuki Uemura ,  Masahiro Kume

    发明人： Akihiko Ishibashi ,  Yuzaburo Ban ,  Yoshihiro Hara ,  Nobuyuki Uemura ,  Masahiro Kume

    IPC分类号： H01L310312

    CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  Y10S438/931

    摘要： First of all, a semiconductor substrate which consists of SiC is soaked for ten minutes in a buffered hydrofluoric acid, thereby the oxidized film formed on the surface of the semiconductor substrate being etched. Then, TMA, NH3, TMG, and hydrogen for carrier are supplied at the rates of 10 &mgr;mol/min., 2.5 L/min., and 2 L/min., respectively to the semiconductor substrate at a temperature of 1090° C. by using MOVPE, thereby a buffer layer which consists of single crystal AlN and has a thickness of 15 nm being grown on the main surface of the semiconductor substrate. After lowering the temperature to 800° C., TMA, TMG, TMI, and NH3are supplied at the rates of 0.2 &mgr;mol/min., 2 &mgr;mol/min., 20 &mgr;mol/min., and 5 L/min., respectively, thereby a single crystal layer which consists of AlGaInN being grown on the buffer layer.

    摘要翻译： 首先，将由SiC构成的半导体基板在缓冲氢氟酸中浸渍10分钟，由此在半导体基板的表面上形成的氧化膜被蚀刻。 然后，在1090℃的温度下，将10Mol / min，2.5L / min和2L / min的速率分别供给到半导体衬底上，作为载体的TMA，NH 3，TMG和氢。 通过使用MOVPE，由此在半导体衬底的主表面上生长由单晶AlN构成的厚度为15nm的缓冲层。 在将温度降至800℃后，分别以0.2mumol / min，2mumol / min，20mumol / min和5L / min的速率提供TMA，TMG，TMI和NH 3， 从而在缓冲层上生长由AlGaInN组成的单晶层。

    Method of manufacturing a semiconductor light-emitting device
    3.
    发明授权
    Method of manufacturing a semiconductor light-emitting device 失效
    制造半导体发光装置的方法

    公开(公告)号：US5923950A

    公开(公告)日：1999-07-13

    申请号：US872154

    申请日：1997-06-10

    申请人： Akihiko Ishibashi ,  Yuzaburo Ban ,  Yoshihiro Hara ,  Nobuyuki Uemura ,  Masahiro Kume

    发明人： Akihiko Ishibashi ,  Yuzaburo Ban ,  Yoshihiro Hara ,  Nobuyuki Uemura ,  Masahiro Kume

    IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L33/00

    CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  Y10S438/931

    摘要： A method for manufacturing a semiconductor is disclosed. The method involves soaking a semiconductor substrate that consists of SiC for ten minutes in a buffered hydrofluoric acid, thereby etching the oxidized film formed on the surface of the semiconductor substrate. Then, TMA, NH.sub.3, TMG, and hydrogen for carrier are supplied at the rates of 10 .mu.mol/min., 2.5 L/min., and 2 L/min., respectively, to the semiconductor substrate at a temperature of 1090.degree. C. by using MOVPE. A buffer layer that consists of a single crystal AlN and has a thickness of about 15 nm is grown on the main surface of the semiconductor substrate. After lowering the temperature to 800.degree. C., TMA, TMG, TMI, and NH.sub.3 are supplied at the rates of 0.2 .mu.mol/min., 2 .mu.mol/min., 20 .mu.mol/min., and 5 L/min., respectively. A single crystal layer which consists of AlGaInN is thus grown on the buffer layer.

    摘要翻译： 公开了半导体制造方法。 该方法包括将由SiC组成的半导体衬底浸入缓冲的氢氟酸中10分钟，从而蚀刻形成在半导体衬底的表面上的氧化膜。 然后，在1090℃的温度下分别以10微摩尔/分钟，2.5L /分和2L /分钟的速度向载体提供TMA，NH 3，TMG和氢气。 C.使用MOVPE。 在半导体衬底的主表面上生长由单晶AlN构成并具有约15nm的厚度的缓冲层。 将温度降至800℃后，以0.2微摩尔/分钟，2微摩尔/分钟，20微摩尔/分钟和5升/分钟的速率供给TMA，TMG，TMI和NH 3 。， 分别。 因此，由AlGaInN构成的单晶层在缓冲层上生长。

    Drive unit, movable module, and autofocus control method
    4.
    发明授权
    Drive unit, movable module, and autofocus control method 失效
    驱动单元，可动模块和自动对焦控制方式

    公开(公告)号：US08576291B2

    公开(公告)日：2013-11-05

    申请号：US13454655

    申请日：2012-04-24

    申请人： Yasutaka Tanimura ,  Takeshi Aoi ,  Yoshihiro Hara ,  Natsuko Shiota

    发明人： Yasutaka Tanimura ,  Takeshi Aoi ,  Yoshihiro Hara ,  Natsuko Shiota

    IPC分类号： H04N5/228 ,  H04N5/232

    CPC分类号： G03B3/10 ,  F03G7/065

    摘要： To provide a drive unit and a drive module which include a shape memory alloy as a drive source to move a driven member and are capable of the high-precision movement of the driven member to a reference position. A drive unit and a drive module can be provided by controlling, in the drive unit and the drive module which include the shape memory alloy as the drive source to move the driven member, the shape memory alloy so that the resistance of the shape memory alloy is equal to the resistance when the driven member is located at the reference position.

    摘要翻译： 提供一种驱动单元和驱动模块，其包括形状记忆合金作为驱动源以移动从动构件并且能够将从动构件的高精度移动到参考位置。 可以通过在包括形状记忆合金作为驱动源的驱动单元和驱动模块中控制驱动单元和驱动模块来移动被动构件，形状记忆合金，使得形状记忆合金的电阻 等于从动构件位于参考位置时的阻力。

    Polar modulation apparatus and communication device
    5.
    发明授权
    Polar modulation apparatus and communication device 有权
    极性调制装置和通信装置

    公开(公告)号：US08466755B2

    公开(公告)日：2013-06-18

    申请号：US13142489

    申请日：2009-11-20

    申请人： Yoshihiro Hara

    发明人： Yoshihiro Hara

    IPC分类号： H03C3/38

    CPC分类号： H03F1/0222 ,  H03F3/24

    摘要： Provided is a Polar modulation apparatus which compensates for output characteristics of a power amplifier. A data generator generates an amplitude component signal and a phase component signal. A phase modulator generates a phase modulated signal obtained by phase modulating the phase component signal. An adder adds an amplitude offset voltage to the amplitude component signal. A power amplifier which includes a first hetero-junction bipolar transistor, amplifies the phase modulated signal by using the amplitude component signal. A monitor unit monitors the power amplifier and outputs a monitor voltage. The control unit calculates the amplitude offset voltage according to the monitor voltage and outputs the calculated amplitude offset voltage to the adder. The monitor unit includes a second hetero-junction bipolar transistor and outputs a collector emitter voltage of the second hetero-junction bipolar transistor as the monitor voltage.

    摘要翻译： 提供了一种用于补偿功率放大器的输出特性的极性调制装置。 数据发生器产生幅度分量信号和相位分量信号。 相位调制器产生通过相位调制相位分量信号获得的相位调制信号。 加法器将振幅偏移电压加到幅度分量信号上。 包括第一异质结双极晶体管的功率放大器通过使用振幅分量信号来放大相位调制信号。 监视器单元监视功率放大器并输出监视器电压。 控制单元根据监视电压来计算幅度偏移电压，并将计算的振幅偏移电压输出到加法器。 监视器单元包括第二异质结双极晶体管，并输出第二异质结双极晶体管的集电极发射极电压作为监视电压。

    Drive device
    6.
    发明授权
    Drive device 失效
    驱动装置

    公开(公告)号：US08351141B2

    公开(公告)日：2013-01-08

    申请号：US12863928

    申请日：2009-01-22

    申请人： Yasutaka Tanimura ,  Yasuhiro Honda ,  Natsuko Shiota ,  Yoshihiro Hara

    发明人： Yasutaka Tanimura ,  Yasuhiro Honda ,  Natsuko Shiota ,  Yoshihiro Hara

    IPC分类号： G02B7/02 ,  G02B15/14

    CPC分类号： F03G7/065 ,  G02B7/028 ,  G02B7/08

    摘要： A drive device includes a setting unit 12 for setting a control value using a control value-displacement characteristic at a predetermined reference temperature showing a relationship between a control value used to position a movable unit 5 and a displacement of the movable unit 5; a drive unit 20 for supplying drive power corresponding to the control value set by the setting unit 12 to a shape-memory alloy 1 and causing the shape-memory alloy 1 to expand or contract, thereby positioning the movable unit 5; and a correction unit 13 for correcting the control value so as to correct a position shift of the movable unit 5 from a target position resulting from a difference between a control value-displacement characteristic at an ambient temperature and a control value-displacement characteristic at the reference temperature based on the ambient temperature detected by a temperature detection unit 11.

    摘要翻译： 驱动装置包括设置单元12，用于使用表示用于定位可移动单元5的控制值与可移动单元5的位移之间的关系的预定参考温度下的控制值 - 位移特性来设定控制值; 驱动单元20，用于将对应于由设置单元12设置的控制值的驱动力提供给形状记忆合金1，并使形状记忆合金1膨胀或收缩，从而定位可移动单元5; 以及校正单元13，用于校正控制值，以便根据环境温度下的控制值 - 位移特性与控制值 - 位移特性之间的差异来校正可移动单元5从目标位置的位置偏移 基于由温度检测单元11检测到的环境温度的基准温度。

    Transmission device and wireless communication apparatus
    7.
    发明授权
    Transmission device and wireless communication apparatus 有权
    传输设备和无线通信设备

    公开(公告)号：US07664202B2

    公开(公告)日：2010-02-16

    申请号：US11547354

    申请日：2006-02-02

    申请人： Yoshihiro Hara ,  Toru Matsuura

    发明人： Yoshihiro Hara ,  Toru Matsuura

    IPC分类号： H04L25/49

    CPC分类号： H03F3/24 ,  H03F1/02 ,  H03F1/0205 ,  H03F1/0227 ,  H03F3/72 ,  H03F2200/324 ,  H03F2200/451

    摘要： In a first mode in which the power level of a transmission output signal (S6) is to be high, an output from the multiplier (2) is input to an amplitude modulation signal amplifier (4), and a radio frequency power amplifier (5) performs amplitude modulation on a radio frequency phase modulated signal (S4) using a nonlinear area with a supply voltage from the amplitude modulation signal amplifier (4). In a second mode in which the power level of a transmission output signal (S6) is to be low, the output from the multiplier (2) is input to a variable gain amplifier (7), and the variable gain amplifier (7) performs amplitude modulation on the radio frequency phase modulated signal (S4). The amplitude modulated signal is output without passing through the radio frequency power amplifier (5).

    摘要翻译： 在发送输出信号（S6）的功率电平为高的第一模式中，来自乘法器（2）的输出被输入到幅度调制信号放大器（4），射频功率放大器（5） ）使用具有来自幅度调制信号放大器（4）的电源电压的非线性区域对射频相位调制信号（S4）进行幅度调制。 在发送输出信号（S6）的功率电平为低的第二模式中，来自乘法器（2）的输出被输入到可变增益放大器（7），并且可变增益放大器（7）执行 对射频相位调制信号进行幅度调制（S4）。 输出幅度调制信号而不通过射频功率放大器（5）。

    IMAGE SENSOR DEVICE
    9.
    发明申请
    IMAGE SENSOR DEVICE 失效
    图像传感器设备

    公开(公告)号：US20080198249A1

    公开(公告)日：2008-08-21

    申请号：US12031981

    申请日：2008-02-15

    申请人： Yasutaka Tanimura ,  Akira Kosaka ,  Natsuki Yamamoto ,  Masataka Hamada ,  Yoshihiro Hara

    发明人： Yasutaka Tanimura ,  Akira Kosaka ,  Natsuki Yamamoto ,  Masataka Hamada ,  Yoshihiro Hara

    IPC分类号： H04N5/335

    CPC分类号： H04N5/2253 ,  G03B5/00 ,  G03B17/17 ,  G03B2205/0038 ,  G03B2205/0053 ,  H04N5/23248

    摘要： An object of the present invention is to provide a small-sized image sensor device having high precision of moving an object to be moved. The image sensor device includes: a fixed unit; a movable unit including an image sensor; a beam unit fixed to the fixed unit and movably supporting the movable unit; a driving unit for applying a driving force for moving the movable unit; and a wire unit provided for the beam unit and electrically connecting the image sensor and an external circuit.

    摘要翻译： 本发明的目的是提供一种移动待移动物体的高精度的小尺寸图像传感器装置。 图像传感器装置包括：固定单元; 包括图像传感器的可移动单元; 固定在固定单元上并可移动地支撑可动单元的梁单元; 用于施加用于移动可移动单元的驱动力的驱动单元; 以及为光束单元设置的电线单元并且电连接图像传感器和外部电路。