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    Method of working nitride semiconductor crystal
    3.
    发明申请
    Method of working nitride semiconductor crystal 审中-公开
    氮化物半导体晶体的制作方法

    公开(公告)号：US20060292832A1

    公开(公告)日：2006-12-28

    申请号：US11472417

    申请日：2006-06-22

    申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Takayuki Nishiura

    发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Takayuki Nishiura

    IPC分类号： H01L21/00

    CPC分类号： H01L21/3043 ,  B23H7/02 ,  B23H9/00

    摘要： In a method of working a crystal, when a nitride semiconductor crystal is worked, voltage is applied between the nitride semiconductor crystal and a tool electrode to cause electrical discharge, so that the crystal is partially removed and worked by local heat generated by the electrical discharge.

    摘要翻译： 在加工晶体的方法中，当氮化物半导体晶体被加工时，在氮化物半导体晶体和工具电极之间施加电压以进行放电，从而通过放电产生的局部热来部分去除和加工晶体 。

    Production method of compound semiconductor member
    4.
    发明授权
    Production method of compound semiconductor member 失效
    化合物半导体部件的制造方法

    公开(公告)号：US08115927B2

    公开(公告)日：2012-02-14

    申请号：US12622971

    申请日：2009-11-20

    申请人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

    发明人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

    IPC分类号： G01J4/00

    CPC分类号： G01N21/211

    摘要： A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.

    摘要翻译： 1.一种评价化合物半导体部件的损伤的方法，包括：在所述化合物半导体部件的表面上进行光谱椭圆偏光测定的工序; 以及通过使用通过光谱椭圆偏振测量获得的光学常数的光谱，使用包含对应于化合物半导体部件的带隙的波长的波长带中的光谱来评估化合物半导体部件的表面的损伤的步骤。

    NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR DEVICE, AND METHOD OF PRODUCING THE DEVICES
    7.
    发明申请
    NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR DEVICE, AND METHOD OF PRODUCING THE DEVICES 审中-公开
    基于氮化物的化合物半导体器件，化合物半导体器件及其制造方法

    公开(公告)号：US20110018105A1

    公开(公告)日：2011-01-27

    申请号：US12890129

    申请日：2010-09-24

    申请人： Akihiro Hachigo ,  Takayuki Nishiura

    发明人： Akihiro Hachigo ,  Takayuki Nishiura

    IPC分类号： H01L21/30 ,  H01L29/34 ,  H01L21/306

    CPC分类号： H01L21/02052 ,  H01L33/007

    摘要： There is provided a method of producing a nitride-based compound semiconductor device that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. The method of producing a nitride-based compound semiconductor device in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, the nitride-based compound semiconductor is cleaned with a cleaning liquid having a pH of 7.1 or higher ultrasonically.

    摘要翻译： 提供一种制造氮化物系化合物半导体装置的方法，其抑制在化合物半导体的表面上包含杂质，微粒等的杂质的附着。 本发明的氮化物类化合物半导体装置的制造方法具有以下步骤：制备氮化物类化合物半导体（或基板制备工序）; 和清洁。 在清洁步骤中，用超声波pH为7.1或更高的清洗液清洗氮化物类化合物半导体。

    Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate
    9.
    发明授权
    Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate 有权
    氮化物系化合物半导体，化合物半导体的清洗方法及其制造方法以及基板

    公开(公告)号：US07569493B2

    公开(公告)日：2009-08-04

    申请号：US11435129

    申请日：2006-05-17

    申请人： Akihiro Hachigo ,  Takayuki Nishiura

    发明人： Akihiro Hachigo ,  Takayuki Nishiura

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02052

    摘要： There is provided a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. A method of cleaning a nitride-based compound semiconductor in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, a cleaning liquid having a pH of 7.1 or higher is used to clean the nitride-based compound semiconductor.

    摘要翻译： 提供一种清除方法和制造方法，其抑制在化合物半导体的表面上的杂质，微粒等杂质的附着。 根据本发明的清洗氮化物基化合物半导体的方法包括以下步骤：制备氮化物基化合物半导体（或基板制备步骤）; 和清洁。 在清洗步骤中，使用pH为7.1以上的清洗液清洗氮化物系化合物半导体。