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    Semiconductor light emitting device
    3.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08368089B2

    公开(公告)日：2013-02-05

    申请号：US12885777

    申请日：2010-09-20

    申请人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

    发明人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

    IPC分类号： H01L29/18 ,  H01L33/00

    CPC分类号： H01L33/50 ,  H01L33/46 ,  H01L33/486 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，透明层和荧光材料层。 透明层设置在半导体层的第一主表面上。 透明层相对于由发光层发射的光是透明的，并且具有设置在发光层的外周外的沟槽。 荧光材料层设置在沟槽和透明层上。 荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。 第一荧光体粒子的粒径小于沟槽的宽度。 第二荧光体粒子的粒径大于沟槽的宽度，大于第一荧光体粒子的粒径。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
    半导体发光器件

    公开(公告)号：US20110297969A1

    公开(公告)日：2011-12-08

    申请号：US12885777

    申请日：2010-09-20

    申请人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

    发明人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

    IPC分类号： H01L33/08 ,  H01L33/26

    CPC分类号： H01L33/50 ,  H01L33/46 ,  H01L33/486 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，透明层和荧光材料层。 透明层设置在半导体层的第一主表面上。 透明层相对于由发光层发射的光是透明的，并且具有设置在发光层的外周外的沟槽。 荧光材料层设置在沟槽和透明层上。 荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。 第一荧光体粒子的粒径小于沟槽的宽度。 第二荧光体粒子的粒径大于沟槽的宽度，大于第一荧光体粒子的粒径。

    Semiconductor light emitting device and method for manufacturing same
    9.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US09153746B2

    公开(公告)日：2015-10-06

    申请号：US13601568

    申请日：2012-08-31

    申请人： Akihiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideko Mukaida ,  Miyoko Shimada ,  Yoshiaki Sugizaki ,  Hideto Furuyama

    发明人： Akihiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideko Mukaida ,  Miyoko Shimada ,  Yoshiaki Sugizaki ,  Hideto Furuyama

    IPC分类号： H01L33/52 ,  H01L33/00 ,  H01L33/38 ,  H01L21/50

    CPC分类号： H01L33/486 ,  H01L33/387 ,  H01L33/62

    摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.

    摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。

    Semiconductor light emitting device
    10.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08614455B2

    公开(公告)日：2013-12-24

    申请号：US13424687

    申请日：2012-03-20

    申请人： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

    发明人： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

    IPC分类号： H01L33/00

    CPC分类号： H01L33/62 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

    摘要翻译： 根据实施例，半导体发光器件包括层叠体，第一和第二电极，第一和第二互连，第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。