Semiconductor light emitting device
    1.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号:US08614455B2

    公开(公告)日:2013-12-24

    申请号:US13424687

    申请日:2012-03-20

    IPC分类号: H01L33/00

    摘要: According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

    摘要翻译: 根据实施例,半导体发光器件包括层叠体,第一和第二电极,第一和第二互连,第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

    METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE
    2.
    发明申请
    METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE 审中-公开
    制造发光装置的方法

    公开(公告)号:US20110300651A1

    公开(公告)日:2011-12-08

    申请号:US12888558

    申请日:2010-09-23

    IPC分类号: H01L33/44

    摘要: According to one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include forming a first electrode and a second electrode on a semiconductor layer which is included in a first structure body, the semiconductor layer including a light-emitting layer on a substrate. The method can include forming a first metal pillar in conduction with the first electrode, and a second metal pillar in conduction with the second electrode. The method can include filling a region between the first metal pillar and the second metal pillar with an insulating layer. In addition, the method can include separating the substrate from the semiconductor layer, and forming a second structure body in which the semiconductor layer is supported by the insulating layer and which is convex toward an opposite side of the insulating layer to the semiconductor layer.

    摘要翻译: 根据一个实施例,公开了一种用于制造发光器件的方法。 该方法可以包括在包括在第一结构体中的半导体层上形成第一电极和第二电极,该半导体层包括在基板上的发光层。 该方法可以包括形成与第一电极导通的第一金属柱和与第二电极导通的第二金属柱。 该方法可以包括用绝缘层填充第一金属柱和第二金属柱之间的区域。 此外,该方法可以包括从半导体层分离衬底,以及形成第二结构体,其中半导体层被绝缘层支撑并且朝向绝缘层的与半导体层相反的一侧凸出。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
    半导体发光器件及其制造方法

    公开(公告)号:US20120241792A1

    公开(公告)日:2012-09-27

    申请号:US13424687

    申请日:2012-03-20

    IPC分类号: H01L33/60 H01L33/00

    摘要: According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

    摘要翻译: 根据实施例,半导体发光器件包括层叠体,第一和第二电极,第一和第二互连,第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

    Light source apparatus using semiconductor light emitting device
    10.
    发明授权
    Light source apparatus using semiconductor light emitting device 失效
    使用半导体发光元件的光源装置

    公开(公告)号:US08569787B2

    公开(公告)日:2013-10-29

    申请号:US13154916

    申请日:2011-06-07

    IPC分类号: H01L33/00

    摘要: According to one embodiment, a light source apparatus includes a semiconductor light emitting device, a mounting substrate, first and second connection members. The semiconductor light emitting device includes a light emitting unit, first and second conductive members, a sealing member, and an optical layer. The mounting substrate includes a base body, first and second substrate electrodes. The connection member electrically connects the conductive member to the substrate electrode. The conductive member is electrically connected to the light emitting unit electrode and includes first and second columnar portions provided on the second major surface. The sealing member covers side surfaces of the first and the second conductive members. The optical layer is provided on the first major surface of the semiconductor stacked body and includes a wavelength conversion unit. A surface area of the second substrate electrode is not less than 100 times a cross-sectional area of the second columnar portion.

    摘要翻译: 根据一个实施例,光源装置包括半导体发光器件,安装衬底,第一和第二连接构件。 半导体发光器件包括发光单元,第一和第二导电构件,密封构件和光学层。 安装基板包括基体,第一和第二基板电极。 连接构件将导电构件电连接到基板电极。 导电构件电连接到发光单元电极,并且包括设置在第二主表面上的第一和第二柱状部分。 密封构件覆盖第一导电构件和第二导电构件的侧表面。 光学层设置在半导体层叠体的第一主表面上并且包括波长转换单元。 第二基板电极的表面积不小于第二柱状部分的横截面面积的100倍。