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1.发明授权Semiconductor device with integrated trench lateral power MOSFETs and planar devices 失效具有集成沟槽横向功率MOSFET和平面器件的半导体器件公开(公告)号：US07365392B2
公开(公告)日：2008-04-29
申请号：US11010508
申请日：2004-12-14
IPC分类号： H01L27/00
CPC分类号： H01L29/7825 , H01L21/8234 , H01L21/8249 , H01L27/0623 , H01L27/088 , H01L29/0878 , H01L29/1083 , H01L29/41766 , H01L29/4236 , H01L29/456 , H01L29/66621 , H01L29/66659 , H01L29/7801 , H01L29/7827 , H01L29/7834 , H01L29/7835
摘要： Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.
摘要翻译： 通过图案化同一多晶硅层形成TLPM的栅电极和平面器件的栅电极。 通过对相同的金属层进行构图，形成TLPM的漏极和源极，并且平面器件的漏电极和源电极形成。 因此，TLPM和平面器件可以通过所得的金属布线层和多晶硅层彼此电连接，而不需要在印刷电路板上进行引线接合。
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公开(公告)号：US20080303087A1
公开(公告)日：2008-12-11
申请号：US12149016
申请日：2008-04-24
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L29/7825 , H01L21/8234 , H01L21/8249 , H01L27/0623 , H01L27/088 , H01L29/0878 , H01L29/1083 , H01L29/41766 , H01L29/4236 , H01L29/456 , H01L29/66621 , H01L29/66659 , H01L29/7801 , H01L29/7827 , H01L29/7834 , H01L29/7835
摘要： Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.
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公开(公告)号：US20050087800A1
公开(公告)日：2005-04-28
申请号：US11010508
申请日：2004-12-14
IPC分类号： H01L21/8234 , H01L21/8249 , H01L27/06 , H01L27/088 , H01L29/417 , H01L29/45 , H01L29/78 , H01L29/76
CPC分类号： H01L29/7825 , H01L21/8234 , H01L21/8249 , H01L27/0623 , H01L27/088 , H01L29/0878 , H01L29/1083 , H01L29/41766 , H01L29/4236 , H01L29/456 , H01L29/66621 , H01L29/66659 , H01L29/7801 , H01L29/7827 , H01L29/7834 , H01L29/7835
摘要： Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.
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公开(公告)号：US06858500B2
公开(公告)日：2005-02-22
申请号：US10334127
申请日：2002-12-31
IPC分类号： H01L21/8234 , H01L21/8249 , H01L27/06 , H01L27/088 , H01L29/417 , H01L29/45 , H01L29/78 , H01L21/336
CPC分类号： H01L29/7825 , H01L21/8234 , H01L21/8249 , H01L27/0623 , H01L27/088 , H01L29/0878 , H01L29/1083 , H01L29/41766 , H01L29/4236 , H01L29/456 , H01L29/66621 , H01L29/66659 , H01L29/7801 , H01L29/7827 , H01L29/7834 , H01L29/7835
摘要： Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.
摘要翻译： 通过图案化同一多晶硅层形成TLPM的栅电极和平面器件的栅电极。 通过对相同的金属层进行构图，形成TLPM的漏极和源极，并且平面器件的漏电极和源电极形成。 因此，TLPM和平面器件可以通过所得的金属布线层和多晶硅层彼此电连接，而不需要在印刷电路板上进行引线接合。
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公开(公告)号：US07256086B2
公开(公告)日：2007-08-14
申请号：US11329012
申请日：2006-01-10
申请人： Katsuya Tabuchi , Naoto Fujishima , Mutsumi Kitamura , Akio Sugi
发明人： Katsuya Tabuchi , Naoto Fujishima , Mutsumi Kitamura , Akio Sugi
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/7825 , H01L21/823885 , H01L27/0922 , H01L29/41766 , H01L29/4232 , H01L29/42368 , H01L29/4238 , H01L29/66674 , H01L29/7801 , H01L29/7809
摘要： A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional lateral power MOSFET for use with a lower breakdown voltage than 80V. A gate oxide film is formed thinly along the lateral surfaces of a trench at a uniform thickness. Then, a gate oxide film is formed along the bottom surface of the trench by selective oxidation so as to be thicker than the gate oxide film on the lateral surfaces of the trench and so as to become progressively thicker from the edge of the bottom surface of the trench toward drain polysilicon.
摘要翻译： 提供了一种半导体器件，其可以通过比用于80V击穿电压的常规横向沟槽功率MOSFET更简单的工艺制造，并且其具有比常规侧向功率MOSFET更小的器件间距和每单位面积的较低导通电阻 用于低于80V的击穿电压。 沿着沟槽的侧表面以均匀的厚度薄化地形成栅氧化膜。 然后，通过选择性氧化沿着沟槽的底表面形成栅极氧化膜，以便比沟槽的侧表面上的栅极氧化膜更厚，并且从底表面的边缘逐渐变厚 沟渠朝向多晶硅排水。
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公开(公告)号：US07034377B2
公开(公告)日：2006-04-25
申请号：US10720738
申请日：2003-11-24
申请人： Akio Sugi , Naoto Fujishima , Mutsumi Kitamura , Katsuya Tabuchi
发明人： Akio Sugi , Naoto Fujishima , Mutsumi Kitamura , Katsuya Tabuchi
IPC分类号： H01L29/00 , H01L29/76 , H01L31/119
CPC分类号： H01L29/7825 , H01L29/41766 , H01L29/4232 , H01L29/4238 , H01L29/66674 , H01L29/7801
摘要： To reduce the on-resistance in a semiconductor device, such as a trench lateral power MOSFET, a trench etching region forms a mesh pattern in which a first trench section, formed in an active region, and a second trench section, formed in a gate region for leading out gate polysilicon to a substrate surface, intersect each other. An island-like non-trench region, which is left without being subjected to etching, is divided into a plurality of smaller regions by one or more third trench section that connect with the first and second trench sections that form the mesh pattern. In each non-trench region, a contact section for connecting a drain region (or a source region) and an electrode is formed so as to be spread over all of the smaller regions in the non-trench region.
摘要翻译： 为了减小诸如沟槽横向功率MOSFET的半导体器件中的导通电阻，沟槽蚀刻区域形成网格图案，其中形成在有源区域中的第一沟槽部分和形成在栅极中的第二沟槽部分 用于将栅极多晶硅引出到衬底表面的区域彼此相交。 留下不经过蚀刻的岛状非沟槽区域通过与构成网状图案的第一和第二沟槽部分连接的一个或多个第三沟槽部分分成多个较小区域。 在每个非沟槽区域中，形成用于连接漏极区域（或源极区域）和电极的接触部分，以便扩展到非沟槽区域中的所有较小区域。
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公开(公告)号：US20060110875A1
公开(公告)日：2006-05-25
申请号：US11329012
申请日：2006-01-10
申请人： Katsuya Tabuchi , Naoto Fujishima , Mutsumi Kitamura , Akio Sugi
发明人： Katsuya Tabuchi , Naoto Fujishima , Mutsumi Kitamura , Akio Sugi
IPC分类号： H01L21/8238
CPC分类号： H01L29/7825 , H01L21/823885 , H01L27/0922 , H01L29/41766 , H01L29/4232 , H01L29/42368 , H01L29/4238 , H01L29/66674 , H01L29/7801 , H01L29/7809
摘要： A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional lateral power MOSFET for use with a lower breakdown voltage than 80V. A gate oxide film is formed thinly along the lateral surfaces of a trench at a uniform thickness. Then, a gate oxide film is formed along the bottom surface of the trench by selective oxidation so as to be thicker than the gate oxide film on the lateral surfaces of the trench and so as to become progressively thicker from the edge of the bottom surface of the trench toward drain polysilicon.
摘要翻译： 提供了一种半导体器件，其可以通过比用于80V击穿电压的常规横向沟槽功率MOSFET更简单的工艺制造，并且其具有比常规侧向功率MOSFET更小的器件间距和每单位面积的较低导通电阻 用于低于80V的击穿电压。 沿着沟槽的侧表面以均匀的厚度薄化地形成栅氧化膜。 然后，通过选择性氧化沿着沟槽的底表面形成栅极氧化膜，以便比沟槽的侧表面上的栅极氧化膜更厚，并且从底表面的边缘逐渐变厚 沟渠朝向多晶硅排水。
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公开(公告)号：US07012301B2
公开(公告)日：2006-03-14
申请号：US10322367
申请日：2002-12-18
申请人： Katsuya Tabuchi , Naoto Fujishima , Mutsumi Kitamura , Akio Sugi
发明人： Katsuya Tabuchi , Naoto Fujishima , Mutsumi Kitamura , Akio Sugi
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7825 , H01L21/823885 , H01L27/0922 , H01L29/41766 , H01L29/4232 , H01L29/42368 , H01L29/4238 , H01L29/66674 , H01L29/7801 , H01L29/7809
摘要： A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional lateral power MOSFET for use with a lower breakdown voltage than 80V. A gate oxide film is formed thinly along the lateral surfaces of a trench at a uniform thickness. Then, a gate oxide film is formed along the bottom surface of the trench by selective oxidation so as to be thicker than the gate oxide film on the lateral surfaces of the trench and so as to become progressively thicker from the edge of the bottom surface of the trench toward drain polysilicon.
摘要翻译： 提供了一种半导体器件，其可以通过比用于80V击穿电压的常规横向沟槽功率MOSFET更简单的工艺制造，并且其具有比常规侧向功率MOSFET更小的器件间距和每单位面积的较低导通电阻 用于低于80V的击穿电压。 沿着沟槽的侧表面以均匀的厚度薄化地形成栅氧化膜。 然后，通过选择性氧化沿着沟槽的底表面形成栅极氧化膜，以便比沟槽的侧表面上的栅极氧化膜更厚，并且从底表面的边缘逐渐变厚 沟渠朝向多晶硅排水。
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公开(公告)号：US08378418B2
公开(公告)日：2013-02-19
申请号：US12805965
申请日：2010-08-26
IPC分类号： H01L29/66
CPC分类号： H01M10/4207 , H01L27/0629 , H01L29/0696 , H01L29/4238 , H01L29/781 , H01L29/7827 , H01M10/48
摘要： A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced.
摘要翻译： 双向沟槽横向功率MOSFET（TLPM）可实现高击穿电压和低导通电阻。 在两端具有圆形部分的多个直形岛被沟槽布置包围。 这些岛提供第一n个源区，并且在岛的外部形成第二n源区。 利用这种图案，在第二n个源极区域处于高电位的情况下，在第一n个源极区域处于高电位的情况下的击穿电压可以高于击穿电压。 或者，在不改变击穿电压的情况下，可以降低导通电阻。
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公开(公告)号：US20100330398A1
公开(公告)日：2010-12-30
申请号：US12805965
申请日：2010-08-26
CPC分类号： H01M10/4207 , H01L27/0629 , H01L29/0696 , H01L29/4238 , H01L29/781 , H01L29/7827 , H01M10/48
摘要： A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced.
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