公开(公告)号：US09287434B2

公开(公告)日：2016-03-15

申请号：US14129684

申请日：2012-06-18

申请人： Akio Yamamoto ,  Seiji Oguri ,  Hiromitsu Ogawa ,  Aki Kitabayashi ,  Shinichi Abe ,  Kazumasa Umesato ,  Norihiko Matsushima ,  Keizo Takeda ,  Manabu Kyuzo ,  Ken Nishiura ,  Atsuo Hatate

发明人： Akio Yamamoto ,  Seiji Oguri ,  Hiromitsu Ogawa ,  Aki Kitabayashi ,  Shinichi Abe ,  Kazumasa Umesato ,  Norihiko Matsushima ,  Keizo Takeda ,  Manabu Kyuzo ,  Ken Nishiura ,  Atsuo Hatate

IPC分类号： H01L31/18 ,  H01L21/02 ,  H01L31/032

CPC分类号： H01L31/18 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02469 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0324 ,  Y02E10/541 ,  Y02P70/521

摘要： Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

摘要翻译： 公开了半导体层的制造方法和光电转换装置的制造方法。 制造半导体层的方法的一个实施例包括：形成含有金属元素和氧元素的膜; 通过加热膜产生氧气; 以及通过使所述金属元素与硫属元素反应从所述膜形成含有金属硫族化物的半导体层。 该方法的另一实施例包括形成含有金属元素的下膜; 在下膜上形成含有金属元素和含有氧的物质的上膜; 通过加热物质产生氧气; 以及通过使硫属元素与下膜和上膜中的金属元素反应，从下膜和上膜形成含有金属硫族化物的半导体层。

公开(公告)号：US20140127851A1

公开(公告)日：2014-05-08

申请号：US14129684

申请日：2012-06-18

申请人： Akio Yamamoto ,  Seiji Oguri ,  Hiromitsu Ogawa ,  Aki Kitabayashi ,  Shinichi Abe ,  Kazumasa Umesato ,  Norihiko Matsushima ,  Keizo Takeda ,  Manabu Kyuzo ,  Ken Nishiura ,  Atsuo Hatate

发明人： Akio Yamamoto ,  Seiji Oguri ,  Hiromitsu Ogawa ,  Aki Kitabayashi ,  Shinichi Abe ,  Kazumasa Umesato ,  Norihiko Matsushima ,  Keizo Takeda ,  Manabu Kyuzo ,  Ken Nishiura ,  Atsuo Hatate

IPC分类号： H01L31/18 ,  H01L31/032 ,  H01L21/02

CPC分类号： H01L31/18 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02469 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0324 ,  Y02E10/541 ,  Y02P70/521

摘要： Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

摘要翻译： 公开了半导体层的制造方法和光电转换装置的制造方法。 制造半导体层的方法的一个实施例包括：形成含有金属元素和氧元素的膜; 通过加热膜产生氧气; 以及通过使所述金属元素与硫属元素反应从所述膜形成含有金属硫族化物的半导体层。 该方法的另一实施例包括形成含有金属元素的下膜; 在下膜上形成含有金属元素和含有氧的物质的上膜; 通过加热物质产生氧气; 以及通过使硫属元素与下膜和上膜中的金属元素反应，从下膜和上膜形成含有金属硫族化物的半导体层。

公开(公告)号：US20120006389A1

公开(公告)日：2012-01-12

申请号：US13256902

申请日：2010-06-29

申请人： Norihiko Matsushima ,  Daisuke Nishimura ,  Atsuo Hatate ,  Takeshi Ohkuma ,  Hisao Arimune ,  Yukari Hashimoto

发明人： Norihiko Matsushima ,  Daisuke Nishimura ,  Atsuo Hatate ,  Takeshi Ohkuma ,  Hisao Arimune ,  Yukari Hashimoto

IPC分类号： H01L31/02 ,  H01L31/18

CPC分类号： H01L31/1868 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/5313

摘要： An embodiment of a method of manufacturing a photoelectric conversion device according to the present invention includes specifying a spot having an abnormal physical property in a structure comprising a photoelectric conversion member, including a semiconductor layer, between a pair of first and second electrodes, and isolating the spot having an abnormal physical property through mechanical scribing.

摘要翻译： 根据本发明的制造光电转换装置的方法的实施例包括在包括半导体层的光电转换构件的结构中指定在一对第一和第二电极之间具有异常物理特性的点，并且隔离 通过机械划线具有异常物理特性的现场。

公开(公告)号：US07402747B2

公开(公告)日：2008-07-22

申请号：US10781355

申请日：2004-02-18

申请人： Shin Sugawara ,  Atsuo Hatate ,  Akiko Komoda ,  Hisao Arimune

发明人： Shin Sugawara ,  Atsuo Hatate ,  Akiko Komoda ,  Hisao Arimune

IPC分类号： H01L31/00 ,  H02N6/00 ,  E04B5/48

CPC分类号： H01L31/1804 ,  H01L31/035281 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/072 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： There is disclosed a photoelectric conversion device comprising a substrate 1 serving as a lower electrode; first conductivity-type crystalline semiconductor particles 3 deposited on the substrate; second conductivity-type semiconductor layers 4 formed on the crystalline semiconductor particles 3; an insulator layer 2 formed among the crystalline semiconductor particles; and an upper electrode layer 5 formed on the second conductivity-type semiconductor layers 4, wherein the second conductivity-type semiconductor layers 4 each have a smaller thickness at or below an equator of each of the crystalline semiconductor particles than at a zenith region thereof, and the second conductivity-type semiconductor layers 4 include an impurity element with a concentration gradient decreasing with proximity to the crystalline semiconductor particles.

摘要翻译： 公开了一种光电转换装置，其包括用作下电极的基板1; 沉积在基板上的第一导电型晶体半导体颗粒3; 形成在结晶半导体粒子3上的第二导电型半导体层4; 形成在所述结晶半导体颗粒之间的绝缘体层2; 以及形成在第二导电型半导体层4上的上电极层5，其中第二导电型半导体层4在每个晶体半导体颗粒的赤道处或下方的厚度比在其顶点区域具有更小的厚度， 并且第二导电型半导体层4包括具有随着接近结晶半导体颗粒而减小的浓度梯度的杂质元素。

公开(公告)号：US20110174373A1

公开(公告)日：2011-07-21

申请号：US13120145

申请日：2010-01-28

申请人： Atsuo Hatate ,  Hisao Arimune

发明人： Atsuo Hatate ,  Hisao Arimune

IPC分类号： H01L31/0224

CPC分类号： H01L31/022433 ,  H01L31/046 ,  H01L31/0475 ,  H01L31/0749 ,  Y02E10/541

摘要： A photoelectric conversion cell includes: first and second electrode layers spaced apart from each other; a first semiconductor layer of a first conductivity type provided on the first electrode layer; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer, the second semiconductor layer forming a pn junction with the first semiconductor layer; a connecting portion for electrically connecting the second semiconductor layer and the second electrode layer; and a plurality of collector electrodes each with a linear portion and a projecting portion, the linear portion extending on the second semiconductor layer from a position above the connecting portion toward an end of the second semiconductor layer, the projecting portion overlapping at least partially the connecting portion in top perspective view, while projecting from at least one of opposite ends of the linear portion in its shorter side direction. In two adjacent ones of the plurality of collector electrodes, the projecting portions of the adjacent collector electrodes are spaced apart from each other.

摘要翻译： 光电转换单元包括：彼此间隔开的第一和第二电极层; 设置在第一电极层上的第一导电类型的第一半导体层; 设置在所述第一半导体层上的第二导电类型的第二半导体层，所述第二半导体层与所述第一半导体层形成pn结; 用于电连接第二半导体层和第二电极层的连接部分; 以及多个集电极，每个具有直线部分和突出部分，所述线性部分从所述连接部分上方的位置朝向所述第二半导体层的端部延伸到所述第二半导体层上，所述突出部分至少部分地重叠连接 同时从直线部分的相对端部中的至少一个沿其较短的侧向突出。 在多个集电极中的两个相邻的集电极中，相邻集电极的突出部彼此间隔开。

公开(公告)号：US20050236030A1

公开(公告)日：2005-10-27

申请号：US10998190

申请日：2004-11-24

申请人： Shin Sugawara ,  Hideki Hakuma ,  Atsuo Hatate ,  Akiko Komoda ,  Hisao Arimune

发明人： Shin Sugawara ,  Hideki Hakuma ,  Atsuo Hatate ,  Akiko Komoda ,  Hisao Arimune

IPC分类号： H01L31/00 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035281 ,  H01L31/03529 ,  H01L31/18 ,  Y02E10/50

摘要： A photoelectric conversion device has a structure in which a plurality of crystalline semiconductor particles (3) of one conductivity type each of which has a semiconductor portion (4) of the opposite conductivity type on its surface are joined to a substrate 1 serving as a lower electrode. The substrate (1) and the semiconductor portion (4) are disposed in a state of being separated by a separation portion (6). An insulator (2) is formed between the adjoining crystalline semiconductor particles (3) so as to cover the surface of the substrate (1) and the lower part of the semiconductor portion (4) and so as to expose the upper part of the semiconductor portion (4). An upper electrode (5) is formed so as to cover the insulator (2) and the upper part of the semiconductor portion (4). A short circuit between the upper electrode (5) and the substrate (1) serving as a lower electrode which is caused by the semiconductor portion (4) can be prevented by providing the separation portion (6). Therefore, the photoelectric conversion device can have high conversion efficiency and high productivity.

摘要翻译： 光电转换装置具有如下结构：其中一个导电类型的多个结晶半导体颗粒（3）在其表面上具有相反导电类型的半导体部分（4）被接合到用作下部的基板1 电极。 基板（1）和半导体部分（4）以分离部分（6）分开的状态设置。 在邻接的结晶半导体颗粒（3）之间形成绝缘体（2），以覆盖基板（1）的表面和半导体部分（4）的下部，以便露出半导体的上部 部分（4）。 上电极（5）形成为覆盖绝缘体（2）和半导体部分（4）的上部。 通过设置分离部（6），能够防止由上述半导体部（4）引起的上部电极（5）与作为下部电极的基板（1）之间的短路。 因此，光电转换装置可以具有高转换效率和高生产率。