公开(公告)号：US20130146928A1

公开(公告)日：2013-06-13

申请号：US13818167

申请日：2012-03-05

申请人： Akira Inoue ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Masaki Fujikane

发明人： Akira Inoue ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Masaki Fujikane

IPC分类号： H01L33/20

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32 ,  H01L33/54 ,  H01L2224/14 ,  H01L2224/16225

摘要： A nitride semiconductor light-emitting element 300 is a nitride semiconductor light-emitting element which has a multilayer structure 310, the multilayer structure 310 including an active layer which is made of an m-plane nitride semiconductor. The multilayer structure 310 has a light extraction surface 311a which is parallel to an m-plane in the nitride semiconductor active layer 306 and light extraction surfaces 311b which are parallel to a c-plane in the nitride semiconductor active layer 306. The ratio of an area of the light extraction surfaces 311b to an area of the light extraction surface 311a is not more than 46%.

公开(公告)号：US08791473B2

公开(公告)日：2014-07-29

申请号：US13256529

申请日：2009-07-09

申请人： Toshiya Yokogawa ,  Akira Inoue ,  Masaki Fujikane ,  Mitsuaki Oya ,  Atsushi Yamada ,  Tadashi Yano

发明人： Toshiya Yokogawa ,  Akira Inoue ,  Masaki Fujikane ,  Mitsuaki Oya ,  Atsushi Yamada ,  Tadashi Yano

IPC分类号： H01L33/32

CPC分类号： H01L25/0753 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure 45 formed from an AlxInyGazN (x+y+z=1, x≧0, y≧0, z≧0) semiconductor, and the nitride-based semiconductor multilayer structure 20 includes an active layer region 24 having an m-plane as an interface; the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each emit polarized light from the active layer region 24; and, when the polarized light emitted from the first nitride-based semiconductor light-emitting element and the polarized light emitted from the second nitride-based semiconductor light-emitting element have wavelengths λ1 and λ2, respectively, and thicknesses of the semiconductor chips 45 of the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element are given as d1 and d2, respectively, the following relations are satisfied: λ1

摘要翻译： 根据本发明的照明装置至少包括第一氮化物基半导体发光元件和第二氮化物基半导体发光元件，其中：第一氮化物基半导体发光元件和第二氮化物半导体发光元件 半导体发光元件各自包括半导体芯片; 半导体芯片包括由Al x In y Ga z N（x + y + z = 1，x≥0，y≥0，z≥0）形成的氮化物基半导体多层结构45，氮化物类半导体多层结构20包括 具有m面作为界面的有源层区域24; 第一氮化物系半导体发光元件和第二氮化物系半导体发光元件均从有源层区域24发射偏振光; 并且当从第一氮化物基半导体发光元件发射的偏振光和从第二氮化物基半导体发光元件发出的偏振光分别具有波长λ1和λ2时，半导体芯片45的厚度 第一氮化物系半导体发光元件和第二氮化物系半导体发光元件分别赋予d1和d2，满足以下关系：λ1<λ2和d1

公开(公告)号：US08729579B2

公开(公告)日：2014-05-20

申请号：US13432022

申请日：2012-03-28

申请人： Toshiya Yokogawa ,  Akira Inoue ,  Masaki Fujikane ,  Mitsuaki Oya ,  Atsushi Yamada ,  Tadashi Yano

发明人： Toshiya Yokogawa ,  Akira Inoue ,  Masaki Fujikane ,  Mitsuaki Oya ,  Atsushi Yamada ,  Tadashi Yano

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  G02F1/133603 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/007 ,  H01L33/18 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicknesses of d1 and d2, respectively, and emit the polarized light having wavelengths λ1 and λ2, respectively, where the inequalities of λ1

摘要翻译： 照明装置至少包括第一和第二氮化物基半导体发光元件，每个半导体发光元件具有带有活性层区域的半导体芯片。 有源层区域与m面成1°以上的角度，由有源层区域的主面的法线和m面的法线形成的角度为1°以上5 或更少。 第一和第二氮化物基半导体发光元件分别具有d1和d2的厚度，并且分别发射波长λ1和λ2的偏振光，其中满足λ1<λ2和d1

公开(公告)号：US08268706B2

公开(公告)日：2012-09-18

申请号：US13061544

申请日：2009-07-29

申请人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

发明人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

IPC分类号： H01L21/203

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/32

摘要： A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S13); and cooling the p-type gallium nitride-based compound semiconductor layer (Step S14) after the step of growing has been carried out. The step of growing includes supplying hydrogen gas to a reaction chamber in which the p-type gallium nitride-based compound semiconductor layer is grown. The step of cooling includes cooling the p-type gallium nitride-based compound semiconductor layer with the supply of the hydrogen gas to the reaction chamber cut off.

摘要翻译： 根据本发明的制造半导体器件的方法包括以下步骤：通过在加热的气氛中进行金属有机化学气相沉积工艺来生长p型氮化镓基化合物半导体层，使得晶体生长面 半导体层为m面（步骤S13）。 并且在生长步骤之后冷却p型氮化镓基化合物半导体层（步骤S14）。 生长步骤包括向生长p型氮化镓系化合物半导体层的反应室供给氢气。 冷却步骤包括：将氢气供给到反应室切断时，冷却p型氮化镓系化合物半导体层。

公开(公告)号：US20120002134A1

公开(公告)日：2012-01-05

申请号：US13256529

申请日：2009-07-09

申请人： Toshiya Yokogawa ,  Akira Inoue ,  Masaki Fujikane ,  Mitsuaki Oya ,  Atsushi Yamada ,  Tadashi Yano

发明人： Toshiya Yokogawa ,  Akira Inoue ,  Masaki Fujikane ,  Mitsuaki Oya ,  Atsushi Yamada ,  Tadashi Yano

IPC分类号： G02F1/1335 ,  H01L33/02

CPC分类号： H01L25/0753 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure 45 formed from an AlxInyGazN (x+y+z=1, x≧0, y≧0, z≧0) semiconductor, and the nitride-based semiconductor multilayer structure 20 includes an active layer region 24 having an m-plane as an interface; the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each emit polarized light from the active layer region 24; and, when the polarized light emitted from the first nitride-based semiconductor light-emitting element and the polarized light emitted from the second nitride-based semiconductor light-emitting element have wavelengths λ1 and λ2, respectively, and thicknesses of the semiconductor chips 45 of the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element are given as d1 and d2, respectively, the following relations are satisfied: λ1

摘要翻译： 根据本发明的照明装置至少包括第一氮化物基半导体发光元件和第二氮化物基半导体发光元件，其中：第一氮化物基半导体发光元件和第二氮化物半导体发光元件 半导体发光元件各自包括半导体芯片; 半导体芯片包括由Al x In y Ga z N（x + y + z = 1，x≥0，y≥0，z≥0）形成的氮化物基半导体多层结构45，氮化物类半导体多层结构20包括 具有m面作为界面的有源层区域24; 第一氮化物系半导体发光元件和第二氮化物系半导体发光元件均从有源层区域24发射偏振光; 并且当从第一氮化物基半导体发光元件发射的偏振光和从第二氮化物基半导体发光元件发出的偏振光分别具有波长λ1和λ2时，半导体芯片45的厚度 第一氮化物系半导体发光元件和第二氮化物系半导体发光元件分别赋予d1和d2，满足以下关系：λ1<λ2和d1

公开(公告)号：US20110159667A1

公开(公告)日：2011-06-30

申请号：US13061544

申请日：2009-07-29

申请人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

发明人： Ryou Kato ,  Masaki Fujikane ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

IPC分类号： H01L21/203

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/32

摘要： A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S13); and cooling the p-type gallium nitride-based compound semiconductor layer (Step S14) after the step of growing has been carried out. The step of growing includes supplying hydrogen gas to a reaction chamber in which the p-type gallium nitride-based compound semiconductor layer is grown. The step of cooling includes cooling the p-type gallium nitride-based compound semiconductor layer with the supply of the hydrogen gas to the reaction chamber cut off.

摘要翻译： 根据本发明的制造半导体器件的方法包括以下步骤：通过在加热的气氛中进行金属有机化学气相沉积工艺来生长p型氮化镓基化合物半导体层，使得晶体生长面 半导体层为m面（步骤S13）。 并且在生长步骤之后冷却p型氮化镓基化合物半导体层（步骤S14）。 生长步骤包括向生长p型氮化镓系化合物半导体层的反应室供给氢气。 冷却步骤包括：将氢气供给到反应室切断时，冷却p型氮化镓系化合物半导体层。

公开(公告)号：US20130126900A1

公开(公告)日：2013-05-23

申请号：US13813693

申请日：2011-08-04

申请人： Akira Inoue ,  Masaki Fujikane ,  Toshiya Yokogawa

发明人： Akira Inoue ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L25/0753 ,  H01L33/16 ,  H01L33/54 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： Around a nitride-based semiconductor light-emitting element which has a polarization characteristic, a transparent encapsulating member which has a cylindrical shape is provided such that the symmetry plane of the cylindrical shape forms an angle of 25° to 65° with respect to the polarization direction of the nitride-based semiconductor light-emitting element.

摘要翻译： 在具有极化特性的氮化物系半导体发光元件周围，设置有圆筒状的透明封装构件，使得圆筒形状的对称面相对于极化形成25°〜65°的角度 氮化物系半导体发光元件的方向。

公开(公告)号：US08058639B2

公开(公告)日：2011-11-15

申请号：US13125367

申请日：2010-04-05

申请人： Akira Inoue ,  Masaki Fujikane ,  Toshiya Yokogawa

发明人： Akira Inoue ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/22 ,  H01L29/24 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/00

CPC分类号： H01L29/045 ,  H01L24/14 ,  H01L24/17 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05184 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01088 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2924/00014

摘要： A light-emitting apparatus of the present invention includes: a mounting base 260 which has a wire 265; and a nitride-based semiconductor light-emitting device flip-chip mounted on the mounting base 260. The nitride-based semiconductor light-emitting device 100 includes a GaN-based substrate 10 which has an m-plane surface 12, a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN-based substrate 10, and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32. The Mg layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20. The electrode 30 is coupled to the wire 265.

摘要翻译： 本发明的发光装置包括：安装基座260，其具有线265; 以及安装在安装基座260上的氮化物系半导体发光装置倒装芯片。氮化物系半导体发光装置100具备：具有m面面12的GaN基基板10，半导体层叠结构体 设置在GaN基基板10的m面表面12上，以及设置在半导体多层结构20上的电极30.电极30包括Mg层32.Mg层32与 p型半导体区域。电极30与线265耦合。

公开(公告)号：US20120021549A1

公开(公告)日：2012-01-26

申请号：US13260434

申请日：2010-03-24

申请人： Masaki Fujikane ,  Akira Inoue ,  Ryou Kato ,  Toshiya Yokogawa

发明人： Masaki Fujikane ,  Akira Inoue ,  Ryou Kato ,  Toshiya Yokogawa

IPC分类号： H01L33/32 ,  H01L21/20

CPC分类号： H01L33/0075 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16

摘要： A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including a −r-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber.

摘要翻译： 氮化物半导体层形成方法包括以下步骤：（S1）将基板放置在反应室中，所述基板至少在上表面包括-r面氮化物半导体晶体; （S2）通过加热放置在反应室中的基板来增加基板的温度; 和（S3）在衬底上生长氮化物半导体层。 在升温工序（S2）中，将氮源气体和III族元素源气体供给到反应室内。

公开(公告)号：US20120001223A1

公开(公告)日：2012-01-05

申请号：US13256061

申请日：2010-12-27

申请人： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

发明人： Akira Inoue ,  Junko Iwanaga ,  Ryou Kato ,  Masaki Fujikane ,  Toshiya Yokogawa

IPC分类号： H01L33/32

CPC分类号： H01L33/14 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/13 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride-based semiconductor light-emitting device 31 includes: an n-type GaN substrate 1 which has an m-plane principal surface; a current diffusing layer 7 provided on the n-type GaN substrate 1; an n-type nitride semiconductor layer 2 provided on the current diffusing layer 7; an active layer 3 provided on the n-type nitride semiconductor layer 2; a p-type nitride semiconductor layer 4 provided on the active layer 3; a p-electrode 5 which is in contact with the p-type nitride semiconductor layer 4; and an n-electrode 6 which is in contact with the n-type GaN substrate 1 or the n-type nitride semiconductor layer 2. The donor impurity concentration of the n-type nitride semiconductor layer 2 is not more than 5×1018 cm−3, and the donor impurity concentration of the current diffusing layer 7 is ten or more times the donor impurity concentration of the n-type nitride semiconductor layer 2.

摘要翻译： 氮化物系半导体发光元件31具备：具有m面主面的n型GaN衬底1， 设置在n型GaN衬底1上的电流扩散层7; 设置在电流扩散层7上的n型氮化物半导体层2; 设置在n型氮化物半导体层2上的有源层3; 设置在有源层3上的p型氮化物半导体层4; 与p型氮化物半导体层4接触的p电极5; 以及与n型GaN衬底1或n型氮化物半导体层2接触的n电极6.n型氮化物半导体层2的施主杂质浓度不大于5×1018cm- 3，电流扩散层7的施主杂质浓度为n型氮化物半导体层2的施主杂质浓度的十倍以上。