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    Disturbance-Free, Recipe-Controlled Plasma Processing System And Method
    3.
    发明申请
    Disturbance-Free, Recipe-Controlled Plasma Processing System And Method 审中-公开
    无干扰，配方控制的等离子体处理系统和方法

    公开(公告)号：US20090120580A1

    公开(公告)日：2009-05-14

    申请号：US12351159

    申请日：2009-01-09

    申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

    发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

    IPC分类号： C23F1/08

    CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

    摘要： A plasma processing apparatus includes a vacuum processing apparatus for performing a multi-step processing operation for a sample, a sensor for monitoring process parameters during at least a first step of the processing operation, a signal compression unit for compressing a signal from the sensor to generate an apparatus state signal, a worked result estimate model unit which estimates a processed result on the basis of the apparatus state signal and a set processed-result estimation equation, an optimum recipe calculation model unit which calculates corrections to processing conditions so that the processed result becomes a target value, a usable recipe selecting unit which judges validity of an optimum recipe. At a next step of the processing operation, sample processing is performed under optimum conditions on the basis of the usable recipe selected by the selected usable recipe.

    摘要翻译： 等离子体处理装置包括用于对样品进行多步骤处理操作的真空处理装置，用于在处理操作的至少第一步骤中监视处理参数的传感器，用于将来自传感器的信号压缩到 生成装置状态信号，工作结果估计模型单元，其基于装置状态信号和设定的处理结果估计方程估计处理结果;最佳配方计算模型单元，其计算对处理条件的校正，使得处理 结果成为目标值，判定最佳配方的有效性的可用配方选择单元。 在处理操作的下一步骤中，基于由所选择的可用食谱选择的可用食谱，在最佳条件下进行样品处理。

    Disturbance-free, recipe-controlled plasma processing system and method
    6.
    发明申请
    Disturbance-free, recipe-controlled plasma processing system and method 审中-公开
    无干扰，配方控制等离子体处理系统和方法

    公开(公告)号：US20050022932A1

    公开(公告)日：2005-02-03

    申请号：US10933413

    申请日：2004-09-03

    申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

    发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

    IPC分类号： H05H1/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66 ,  C23F1/00

    CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

    摘要： A plasma processing control system for a plasma processing apparatus having a plasma processor for performing a plasma processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during the processing operation, a unit for providing a processed-result estimation model which estimates a processed result on the basis of a monitored output from the sensor and a preset processed-result estimation equation, a unit for providing an optimum recipe calculation model which calculates corrections to the processing conditions so that the processed result becomes a target value on the basis of the estimated result of the processed-result estimation model, and a unit for causing the processing apparatus to process the sample under the optimum processing conditions in the next processing step on the basis of a recipe generated from the optimum recipe calculation model.

    摘要翻译： 一种用于等离子体处理装置的等离子体处理控制系统，其具有用于对容纳在真空处理室内的样品进行等离子体处理操作的等离子体处理装置，用于在处理操作期间监视处理参数的传感器，用于提供处理结果估计的单元 模型，其基于来自传感器的监视输出和预设处理结果估计方程来估计处理结果;单元，用于提供最佳配方计算模型，其计算对处理条件的校正，使得处理结果变为目标值 基于处理结果估计模型的估计结果，以及用于使处理装置根据从最佳配方计算模型生成的配方在下一个处理步骤中的最佳处理条件下处理样本的单元 。

    Disturbance-free, recipe-controlled plasma processing system and method
    7.
    发明授权
    Disturbance-free, recipe-controlled plasma processing system and method 有权
    无干扰，配方控制等离子体处理系统和方法

    公开(公告)号：US06733618B2

    公开(公告)日：2004-05-11

    申请号：US09946503

    申请日：2001-09-06

    申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

    发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

    IPC分类号： C23F100

    CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

    摘要： A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

    摘要翻译： 一种可以抑制由干扰引起的影响的等离子体处理控制系统和方法。 控制系统包括：等离子体处理器，用于对容纳在真空处理室内的样品执行处理操作，用于在等离子体处理器的处理操作期间监视处理参数的传感器，用于基于等离子体处理器估计处理结果的处理结果估计模型 传感器的监视输出和预设处理结果预测方程，以及用于基于处理结果估计模型的估计结果计算处理条件的校正值的最佳配方计算模型，使得处理结果 成为目标值。 基于由最佳配方计算模型生成的配方来控制等离子体处理器。

    Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor
    9.
    发明授权
    Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor 有权
    监控和/或控制半导体制造装置的方法及其系统

    公开(公告)号：US07058470B2

    公开(公告)日：2006-06-06

    申请号：US10999006

    申请日：2004-11-30

    申请人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

    发明人： Junichi Tanaka ,  Hiroyuki Kitsunai ,  Akira Kagoshima ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda

    IPC分类号： G06F19/00

    CPC分类号： H01L22/20 ,  G05B13/048 ,  G05B19/41865 ,  G05B23/024 ,  G05B2219/31357 ,  G05B2219/32058 ,  H01L21/67276 ,  H01L2924/0002 ,  Y02P90/12 ,  Y02P90/14 ,  Y02P90/18 ,  Y02P90/20 ,  H01L2924/00

    摘要： A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition or input parameter. The process recipe control unit includes a controller which controls at least one of a plurality of different processing performances for processing of the semiconductor wafer.

    摘要翻译： 用于处理半导体晶片的半导体处理装置包括：用于监视半导体处理装置的处理状态的传感器;输入由半导体处理装置处理的半导体晶片的处理结果的测量值的处理结果输入单元;以及模型方程 依赖于由传感器获取的感测数据和测量值，以产生用于使用感测数据作为解释变量来预测处理结果的模型方程。 该装置包括：处理结果预测单元，其基于模型方程和感测数据预测处理结果;以及处理配方控制单元，其将预测的处理结果与预先设定的值进行比较，以控制处理条件或输入参数。 处理配方控制单元包括控制器，用于控制用于处理半导体晶片的多个不同处理性能中的至少一个。