利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

32 条记录 (耗时 0.017 秒)

    Mask and exposure apparatus using the same
    1.
    发明授权
    Mask and exposure apparatus using the same 失效
    掩模和曝光装置使用它

    公开(公告)号：US5770335A

    公开(公告)日：1998-06-23

    申请号：US687782

    申请日：1996-07-31

    申请人： Akira Miyake ,  Keiko Chiba

    发明人： Akira Miyake ,  Keiko Chiba

    IPC分类号： G03F1/22 ,  G03F1/68 ,  G21K1/10 ,  H01L21/027 ,  G03F9/00 ,  G21K5/00

    CPC分类号： G21K1/10 ,  G03F1/22 ,  G03F1/29

    摘要： A mask for use with radiation including one of X-rays and vacuum ultraviolet rays. The mask includes a transmissive member for supporting a pattern of a radiation absorptive material, and a phase shifter material provided on the transmissive member. The phase shifter material has a radiation absorptivity less than that of the radiation absorptive material. The thickness of the transmissive member at a portion where the phase shifter material is provided is less than that of another portion thereof.

    摘要翻译： 用于辐射的掩模，包括X射线和真空紫外线之一。 掩模包括用于支撑辐射吸收材料的图案的透射构件和设置在透射构件上的移相器材料。 移相器材料的辐射吸收率小于辐射吸收材料的辐射吸收率。 在设置移相器材料的部分处的透射构件的厚度小于其另一部分的厚度。

    Three-dimensional structure forming method
    2.
    发明授权
    Three-dimensional structure forming method 失效
    三维结构成型方法

    公开(公告)号：US07027227B2

    公开(公告)日：2006-04-11

    申请号：US10761293

    申请日：2004-01-22

    申请人： Keiko Chiba ,  Kenichiro Mori

    发明人： Keiko Chiba ,  Kenichiro Mori

    IPC分类号： G02B27/10

    CPC分类号： G03F7/168 ,  B29C64/129 ,  G02B3/0031 ,  G02B3/005 ,  G02B3/0056 ,  G03F7/0005 ,  G03F7/0017 ,  G03F7/0037

    摘要： A method for forming a three-dimensional structure made of a photosensitive material on a substrate includes the steps of determining a film thickness of the photosensitive material necessary to form the desired three-dimensional structure, comparing a predetermined maximum film thickness with the film thickness determined by the determining step, and applying, when the film thickness determined by the determining step is greater than the predetermined maximum film thickness, the photosensitive material within the maximum film thickness plural times until the photosensitive material has the film thickness on the substrate.

    摘要翻译： 用于在基板上形成由感光材料制成的三维结构的方法包括以下步骤：确定形成所需三维结构所需的感光材料的膜厚度，将预定最大膜厚与确定的膜厚进行比较 通过确定步骤，并且当由确定步骤确定的膜厚度大于预定最大膜厚度时，将最大膜厚度内的感光材料多次施加，直到感光材料在基板上具有膜厚度为止。

    X-ray mask and fabrication process using it
    3.
    发明授权
    X-ray mask and fabrication process using it 失效
    X射线掩模和使用它的制作工艺

    公开(公告)号：US5870448A

    公开(公告)日：1999-02-09

    申请号：US855473

    申请日：1997-05-13

    申请人： Hiroshi Maehara ,  Keiko Chiba

    发明人： Hiroshi Maehara ,  Keiko Chiba

    IPC分类号： G03F1/22 ,  G21K1/10 ,  H01L21/027 ,  G21K5/00

    CPC分类号： G03F1/22 ,  G21K1/10

    摘要： The present X-ray mask comprises an X-ray transmitting film, and a mask pattern formed on the X-ray transmitting film, wherein the mask pattern includes a mixture of a high-contrast pattern and a low-contrast pattern against X-rays and wherein the high-contrast pattern is comprised of stacked films the number of which is larger than that of the low-contrast pattern and which are made of different kinds of materials. A fabrication process of this X-ray mask comprises a step of forming a first metal film; a step of forming a second metal film of a different kind of material from the first metal film, thereon; and a step of successively performing a resist application process and an etching process to form a portion where the both first and second metal films are removed, a portion where only the first metal layer is left, and a portion where the both first and second metal layers are left, thereby forming a mask pattern.

    摘要翻译： 本X射线掩模包括X射线透射膜和形成在X射线透射膜上的掩模图案，其中掩模图案包括针对X射线的高对比度图案和低对比度图案的混合物 并且其中所述高对比度图案包括数量大于所述低对比度图案并且由不同种类的材料制成的堆叠薄膜。 该X射线掩模的制造工艺包括形成第一金属膜的步骤; 在其上形成与第一金属膜不同种类的材料的第二金属膜的步骤; 以及连续进行抗蚀剂涂布处理和蚀刻工序以形成去除了第一和第二金属膜两者的部分，仅剩下第一金属层的部分，以及第一和第二金属 留下层，从而形成掩模图案。

    Lithographic mask structure and method of producing the same comprising W and molybdenum alloy absorber
    4.
    发明授权
    Lithographic mask structure and method of producing the same comprising W and molybdenum alloy absorber 失效
    平版印刷掩模结构及其制造方法，包括W和钼合金吸收体

    公开(公告)号：US5733688A

    公开(公告)日：1998-03-31

    申请号：US570686

    申请日：1995-12-11

    申请人： Hideo Kato ,  Masao Sugata ,  Keiko Chiba ,  Hiroshi Maehara

    发明人： Hideo Kato ,  Masao Sugata ,  Keiko Chiba ,  Hiroshi Maehara

    IPC分类号： G03F1/22 ,  G03F9/00

    CPC分类号： G03F1/22

    摘要： A mask suitably usable in X-ray lithography has a membrane and a radiation absorbing material pattern formed on the membrane, wherein the radiation absorbing material pattern contains an alloy including tungsten (W) and molybdenum (Mo), the proportion of the molybdenum content to the alloy being in a range of 0.1-50 wt %, the alloy having crystal precedence orientation of {110}. In one preferred form, the absorbing material pattern is provided on an amolphous metal layer formed on the mask membrane.

    摘要翻译： 适用于X射线光刻的掩模具有在膜上形成的膜和辐射吸收材料图案，其中辐射吸收材料图案包含包含钨（W）和钼（Mo）的合金，钼含量与 该合金的范围为0.1-50wt％，晶体优先取向为{110}的合金。 在一个优选形式中，吸收材料图案设置在形成在掩模膜上的淀粉金属层上。

    Lithographic mask structure and lithographic process
    5.
    发明授权
    Lithographic mask structure and lithographic process 失效
    平版印刷掩模结构和光刻工艺

    公开(公告)号：US4735877A

    公开(公告)日：1988-04-05

    申请号：US915376

    申请日：1986-10-06

    申请人： Hideo Kato ,  Yoshie Izawa ,  Keiko Chiba

    发明人： Hideo Kato ,  Yoshie Izawa ,  Keiko Chiba

    IPC分类号： G03F1/22 ,  G03F7/20 ,  G03F7/10

    CPC分类号： G03F1/22 ,  G03F7/7035 ,  G03F7/70375

    摘要： There is disclosed a lithographic mask structure which comprises a masking material support film and an annular support substrate for supporting the masking material support film at the periphery, the masking material support film containing a fluorescent substance. Also disclosed is a lithographic process for exposing a photosensitive material to irradiation with a radiation beam through a masking material support film provided with a masking material pattern-wise.

    摘要翻译： 公开了一种光刻掩模结构，其包括掩模材料支撑膜和用于在外围支撑掩模材料支撑膜的环形支撑基板，所述掩模材料支撑膜含有荧光物质。 还公开了一种光刻工艺，用于将感光材料暴露于通过图案化地设置有掩模材料的掩模材料支撑膜的辐射束照射。

    EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD
    6.
    发明申请
    EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD 有权
    曝光装置和装置制造方法

    公开(公告)号：US20070109514A1

    公开(公告)日：2007-05-17

    申请号：US11559084

    申请日：2006-11-13

    申请人： Masaru Nyui ,  Keiko Chiba ,  Keiji Yamashita

    发明人： Masaru Nyui ,  Keiko Chiba ,  Keiji Yamashita

    IPC分类号： G03B27/42

    CPC分类号： G03F7/70916 ,  G03F7/70341

    摘要： An exposure apparatus includes an illumination optical system for illuminating a reticle using a light from a light source, and a projection optical system for projecting a pattern of the reticle onto a substrate, the exposure apparatus exposing the substrate through a liquid that is supplied to a space between the substrate and a lens of the projection optical system closest to the substrate, a surface of the lens on which the light does not pass having a polished surface.

    摘要翻译： 曝光装置包括：照明光学系统，用于使用来自光源的光照射光罩;以及投影光学系统，用于将掩模版的图案投射到基板上，所述曝光装置通过供给到 基板和最靠近基板的投影光学系统的透镜之间的空间，光线不通过的透镜的表面具有抛光表面。

    Exposure method and X-ray mask structure for use with the same
    7.
    发明授权
    Exposure method and X-ray mask structure for use with the same 有权
    曝光方法和X射线掩模结构使用相同

    公开(公告)号：US06272202B1

    公开(公告)日：2001-08-07

    申请号：US09426945

    申请日：1999-10-26

    申请人： Keiko Chiba ,  Shunichi Uzawa ,  Mitsuaki Amemiya ,  Yutaka Watanabe

    发明人： Keiko Chiba ,  Shunichi Uzawa ,  Mitsuaki Amemiya ,  Yutaka Watanabe

    IPC分类号： G21K500

    CPC分类号： G03F7/70325 ,  G03F1/22 ,  G03F1/50 ,  G03F7/001 ,  G03F7/2022 ,  G03F7/7035 ,  G03F7/70466

    摘要： An exposure method for printing a pattern onto a workpiece to be exposed, includes a first exposure step for forming, on the workpiece and by exposure, a transferred image of a first absorbing material pattern formed on a mask and having no periodic structure, and a second exposure step for printing, on the workpiece and by exposure, a diffraction pattern to be produced through Fresnel diffraction due to a second absorbing material pattern formed on the mask and having a periodic structure, the diffraction pattern having a period corresponding to 1/n of a period of the transferred image of the periodic structure pattern, where n is an integer not less than 2, and wherein the first and second exposure steps are performed simultaneously.

    摘要翻译： 一种用于将图案印刷到要曝光的工件上的曝光方法包括：第一曝光步骤，用于在工件上形成并且通​​过曝光形成在掩模上形成并且不具有周期性结构的第一吸收材料图案的转印图像，以及 第二曝光步骤，用于在工件上和通过曝光印刷由于在掩模上形成的具有周期性结构的第二吸收材料图案而通过菲涅耳衍射产生的衍射图案，衍射图案具有对应于1 / n的周期 其中n是不小于2的整数，并且其中同时执行第一和第二曝光步骤。