摘要:
A novel disinfectant is disclosed. Said disinfectant is a compound 1,n-bis(N.sup.5 -m-, or p-trifluoromethyl-phenyl-N.sup.1 -biguanido)-C.sub.3 -C.sub.10 -alkane. The m-trifluoro-C.sub.6 derivative is a known compound. The compounds of the present invention exhibit germicidal effect against Pseudomonas aeruginosa, Proteus vulgaris and Alcaligenes faecalis at concentrations of 1/4-1/8 of the effective concentration for chlorhexidine. Against other microorganisms, the compounds are effective at the same level as chlorhexidine.
摘要:
A novel bis-biguanide compound suitable for use as a disinfectant has the following formula: ##STR1## where n is an integer from 2 to 10 inclusive. A pharmaceutically acceptable salt, particularly gluconate salt of the compound is also useful as a disinfectant. The bis-biguanide compound has germicidal activities comparable to those of widely used chlorhexidine with respect to width of antibacterial spectrum and is superior to chlorhexidine in immediate effectiveness. It exhibits excellent germicidal activities against Pyocyaneus bacilli, on which chlorhexidine has poor effect.
摘要:
A hydrophobic silica powder, treated with an amino-substituted silane compound represented by the formula (1) and an organopolysiloxane, having an amount of triboelectrification relative to iron of from over +100 .mu.C/g to up to +700 .mu.C/g, and a hydrophobing ratio of at least 60% as measured by the transmittance method:R.sup.1 SiR.sup.2.sub.3-n R.sup.3.sub.n (1)where R.sup.1 is an amino-substituted alkyl group having from 1 to 10 carbon atoms; R.sup.2 is an alkyl group having from 1 to 5 carbon atoms; R.sup.3 is Cl, Br or an alkoxy group having from 1 to 5 carbon atoms; and n is an integer of from 1 to 3. The treatment is preferably carried out with the silica powder in a suspended state. When the hydrophobic silica powder is used as an agent for improving fluidity of a toner, a developer for electrophotography having a stable electrification and which has excellent fluidity can be obtained, and it is possible to clearly develop an electrostatic image free from fog and to obtain stable developing properties with a long service life.
摘要:
A ceramic electronic component includes a ferrite material magnetic body part and a Cu conductive part, the ferrite containing 20 to 48% trivalent Fe in terms of Fe2O3 and divalent Ni. The ferrite can contain Mn so that it is less than 50% of the total of Fe and Mn in terms of Mn2O3 and Fe2O3. The magnetic and conductive parts are co-fired at a pressure not exceeding the equilibrium oxygen partial pressure of Cu—Cu2O thereby ensuring insulating performance and favorable electrical characteristics.
摘要翻译:陶瓷电子部件包括铁氧体材料磁性体部分和Cu导电部分,铁素体以Fe 2 O 3和二价Ni计为20〜48%的三价Fe。 铁素体可以含有Mn,以Mn2O3和Fe2O3计少于Fe和Mn的总和的50%。 在不超过Cu-Cu 2 O的平衡氧分压的压力下共同烧制磁性和导电部件,从而确保绝缘性能和良好的电特性。
摘要:
Provided is a liquid medication dispensing machine that can remove a liquid medication from one end of a supply pipe with higher reliability. The liquid medication dispensing machine includes a plurality of supply nozzles located at equal intervals through which liquid medications flow from a plurality of liquid medication bottles containing the liquid medications, respectively, to a prescription bottle. The plurality of supply nozzles are moved sequentially to a supply position where a supply nozzle faces an upper opening of the prescription bottle. The liquid medication dispensing machine further includes a cleaning unit that removes the liquid medication adhering to the supply nozzle. The supply nozzles are moved sequentially to a cleaning position where the cleaning unit removes the liquid medication from the supply nozzle. The cleaning position is provided at a position away from the supply position by a distance smaller than a spacing between the supply nozzles.
摘要:
The present invention provides a pectic polysaccharide, wherein a degree of methyl esterification of constituent galacturonic acid is 45% or less, a structure of a single molecule observed with an atomic force microscope comprises a star structure, and a diameter of the molecule is more than 100 nm and equal to or less than 200 nm.
摘要:
Disclosed herein is a solid-state imaging element including: (A) a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers stacked one on top of the other, where M≧2; (B) a charge output region formed in the semiconductor layer; (C) a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and (D) a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes are provided between the mth and (m+1)th light reception/charge storage layers, where 1≦m≦(M−1), to control the potentials of the light reception/charge storage layers.
摘要:
An imaging apparatus includes: an imaging unit configured to image an image using an imaging device; an image obtaining unit configured to obtain a plurality of images equivalent to the time of dark, imaged by the imaging unit; a registering unit configured to register, with an image obtained by the image obtaining unit, the address and change amount of a pixel where the output value of the pixel changes so as to exceed a predetermined threshold; and a correcting unit configured to correct, when taking a pixel corresponding to an address registered by the registering unit as a processing object pixel, the pixel value of the processing object pixel based on comparison between difference of the output values of the processing object pixel and a peripheral pixel of the processing object pixel, and the change amount of the processing object pixel.
摘要:
A solid-state image pickup element includes: (A) a light receiving/charge accumulating region formed in a semiconductor layer and formed by laminating M (where M≧2) light receiving/charge accumulating layers; (B) a charge outputting region formed in the semiconductor layer; (C) a depletion layer forming region formed of a part of the semiconductor layer, the part of the semiconductor layer being situated between the light receiving/charge accumulating region and the charge outputting region; and (D) a control electrode region for controlling a state of formation of a depletion layer in the depletion layer forming region, wherein the solid-state image pickup element further includes a light receiving/charge accumulating layer extending section extending from each light receiving/charge accumulating layer to the depletion layer forming region.
摘要:
Disclosed is a method of manufacturing a semiconductor device including forming a transistor on a first surface of a device substrate, forming a hole in a second surface opposite to the first surface of the device substrate, and supplying hydrogen to a gate insulating film of the transistor from the second surface of the device substrate through the hole.