摘要:
A gas discharge panel capable of high-speed driving at a low drive voltage, while suppressing the occurrence of write errors in a write period, and a manufacturing method for the same. To achieve this, in the gas discharge panel of the present invention, a secondary gas formed from at least one of carbon dioxide, water vapor, oxygen and nitrogen is induced into discharge spaces 30 evacuated until the residual gas pressure is 0.02 mPa or less, and an He—Xe or Ne—Xe rare gas (discharge gas) is induced into discharge spaces 30. The amount of the secondary gas included within discharge spaces 30 when, for example, carbon dioxide is included therein, is suitably set in terms of both a discharge starting voltage and an electron emission ability, so that the partial pressure of the carbon dioxide is in a range of 0.05 mPa to 0.5 mPa inclusive.
摘要:
A plasma display panel having excellent electron emission properties and a method of making the same. A plasma display panel is provided with a protective layer having a dense growth of columnar crystals formed on a dielectric layer. A middle layer can be provided for improving orientation of the columnar crystals. A heating step creates seed crystals to increase the width and growth of columnar crystals with a selective orientation and greater diameter. The area of any exposed surfaces on the protective layer becomes smaller and absorption of impurities decreases. A layer of grain crystals or an amorphic crystal layer is initially deposited on the dielectric layer to establish wider area seed crystals of a desired orientation. A vacuum evaporated complimentary protective layer can then be grown with the improved configuration.
摘要:
A PDP does not suffer from dielectric breakdown even though a dielectric layer is thin, with the problems of conventional PDPs, such as cracks appearing in the glass substrates during the production of the PDP being avoided. To do so, the surface of silver electrodes of the PDP is coated with a 0.1-10 &mgr;m layer of a metallic oxide, on whose surface OH groups exist, such as ZnO, ZrO2, MgO, TiO2, Al2O3, and Cr2O3. The metallic oxide layer is then coated with the dielectric layer. It is preferable to form the metallic oxide layer with the CVD method. The surface of a metallic electrode can be coated with a metallic oxide, which is then coated with a dielectric layer. The dielectric layer can be made of a metallic oxide with a vacuum process method or the plasma thermal spraying method. The dielectric layer formed on electrodes with the CVD method is remarkably thin and flawless. When the dielectric layer is formed with the vacuum process method or the plasma spraying method, warping and cracks conventionally caused by baking the dielectric layer are prevented. Here, borosilicate glass including 6.5% or less by weight of alkali can be used as the glass substrate.
摘要翻译:即使电介质层较薄,PDP也不会受到电介质击穿,同时避免了在制造PDP期间在玻璃基板中出现的常规PDP的问题。 为了这样做,PDP的银电极的表面涂覆有0.1-10μm的金属氧化物层,其表面上存在OH基团,例如ZnO,ZrO 2,MgO,TiO 2,Al 2 O 3和Cr 2 O 3。 然后用电介质层涂覆金属氧化物层。 优选用CVD法形成金属氧化物层。 金属电极的表面可以涂覆有金属氧化物,然后涂覆有介电层。 电介质层可以用真空处理方法或等离子体热喷涂方法由金属氧化物制成。 用CVD法形成在电极上的电介质层非常薄且无瑕疵。 当使用真空处理方法或等离子喷涂方法形成电介质层时,防止了通常由电介质层烘烤引起的翘曲和裂纹。 这里可以使用包含6.5重量%以下的碱的硼硅酸盐玻璃作为玻璃基板。
摘要:
A PDP does not suffer from dielectric breakdown though a dielectric layer is thin, with the problems of conventional PDPs, such as cracks appearing in the glass substrates during the production of the PDP being avoided. To do so, the surface of silver electrodes of the PDP is coated with a 0.1-10 &mgr;m layer of a metallic oxide, on whose surface OH groups exist, such as ZnO, ZrO2, MgO, TiO2, Al2O3, and Cr2O3. The metallic oxide layer is then coated with the dielectric layer. It is preferable to form the metallic oxide layer with the CVD method. The surface of a metallic electrode can be coated with a metallic oxide, which is then coated with a dielectric layer. The dielectric layer can be made of a metallic oxide with a vacuum process method or the plasma thermal spraying method. The dielectric layer formed on electrodes with the CVD method is remarkably thin and flawless. When the dielectric layer is formed with the vacuum process method or the plasma spraying method, warping and cracks conventionally caused by baking the dielectric layer are prevented. Here, borosilicate glass including 6.5% or less by weight of alkali can be used as the glass substrate.
摘要翻译:尽管电介质层较薄,PDP不会遭受电介质击穿,而在PDP的制造过程中出现玻璃基板中的裂纹等常规PDP的问题。 为了这样做,PDP的银电极的表面涂覆有0.1-10μm的金属氧化物层,其表面上存在OH基团,例如ZnO,ZrO 2,MgO,TiO 2,Al 2 O 3和Cr 2 O 3。 然后用电介质层涂覆金属氧化物层。 优选用CVD法形成金属氧化物层。 金属电极的表面可以涂覆有金属氧化物,然后涂覆有介电层。 电介质层可以用真空处理方法或等离子体热喷涂方法由金属氧化物制成。 用CVD法形成在电极上的电介质层非常薄且无瑕疵。 当使用真空处理方法或等离子喷涂方法形成电介质层时,防止了通常由电介质层烘烤引起的翘曲和裂纹。 这里可以使用包含6.5重量%以下的碱的硼硅酸盐玻璃作为玻璃基板。
摘要:
A PDP does not suffer from dielectric breakdown even though a dielectric layer is thin, with the problems of conventional PDPs, such as cracks appearing in the glass substrates during the production of the PDP being avoided. To do so, the surface of silver electrodes of the PDP is coated with a 0.1-10 .mu.m layer of a metallic oxide on whose surface OH groups exist, such as ZnO, ZrO.sub.2, MgO, TiO.sub.2, Al.sub.2 O.sub.3, and Cr.sub.2 O.sub.3. The metallic oxide layer is then coated with the dielectric layer. It is preferable to form the metallic oxide layer with the CVD method. The surface of a metallic electrode can be coated with a metallic oxide, which is than coated with a dielectric layer. The dielectric layer can be made of a metallic oxide with a vacuum process method or the plasma thermal spraying method. The dielectric layer formed on electrodes with the CVD method is remarkably thin and flawless. When the dielectric layer is formed with the vacuum process method or the plasma spraying method, warping and cracks conventionally caused by baking the dielectric layer are prevented. Here, borosilicate glass including 6.5% or less by weight of alkali can be used as the glass substrate.
摘要翻译:即使电介质层较薄,PDP也不会受到电介质击穿,同时避免了在制造PDP期间在玻璃基板中出现的常规PDP的问题。 为此,PDP的银电极的表面涂覆有其表面存在OH基的金属氧化物如ZnO,ZrO 2,MgO,TiO 2,Al 2 O 3和Cr 2 O 3的0.1-10μm层。 然后用电介质层涂覆金属氧化物层。 优选用CVD法形成金属氧化物层。 金属电极的表面可以涂覆有被涂覆有介电层的金属氧化物。 电介质层可以用真空处理方法或等离子体热喷涂方法由金属氧化物制成。 用CVD法形成在电极上的电介质层非常薄且无瑕疵。 当使用真空处理方法或等离子喷涂方法形成电介质层时,防止了通常由电介质层烘烤引起的翘曲和裂纹。 这里可以使用包含6.5重量%以下的碱的硼硅酸盐玻璃作为玻璃基板。
摘要:
A beam emitted from a light source including the characteristic wavelength of flown particles in a film forming system is interrupted by a beam chopper in a predetermined cycle, and is then divided into a probing beam and a reference beam by a beam divider. The probing beam passes through a particle flight area and is then injected into a photo detector through an optical filter, and a probing signal is outputted. A reference signal is obtained from the reference beam in the same manner. A data processor detects the phase and level of both signals, so that an absorbance, i.e., a film forming rate for the flown particles is estimated. The film forming rate is integrated with time so that a film thickness is estimated. Thus, the range of the applicable film forming rate is wide. In addition, it is possible to perform continuous monitoring with high precision also in an atmosphere where a large amount of light having the same wavelength as the characteristic wavelength of the flown particles is generated, as in sputtering systems.
摘要:
An electron emission thin-film with improved secondary electron emission characteristics compared with conventional ones, a plasma display panel including the electron emission thin-film, and their manufacturing methods. Using a vacuum deposition system, a protective layer that is an MgO thin-film is formed on a dielectric layer formed on a front glass substrate. At the time of deposition, angles that lines linking the central point of a target material for the protective layer respectively with the central point and both ends points of the front glass substrate form with the front glass substrate are exclusively in a range of 30 to 80 °. This enables at least some of MgO columnar crystals constituting the protective layer to have flat planes that are inclined with respect to the surface of the thinfilm.
摘要:
Each video signal driver circuit in a liquid crystal display device includes a first amplifier circuit with a first output terminal and first and second input terminals; a second amplifier circuit with a second output terminal and third and fourth input terminals; a first connecting circuit switchable between a first connection wherein an output voltage from the first output terminal is input to the first input terminal as a reference voltage, and a second connection wherein the output voltage from the first output terminal is input to the second input terminal as a reference voltage; and a second connecting circuit switchable between a third connection wherein an output voltage from the second output terminal is input to the third input terminal as a reference voltage, and a fourth connection wherein the output voltage from the second output terminal is input to the fourth input terminal as a reference voltage.
摘要:
A liquid crystal display device includes a liquid crystal panel having plural pixels and a video signal line driver circuit for supplying a video signal voltage to each of the pixels via a corresponding one of plural video lines in accordance with a P-bit display data. The video signal line driver circuit includes a power supply circuit for supplying Q different gray-scale voltages, plural selector circuits corresponding to the video lines, each of the selector circuits for outputting one of first and second pairs of voltages in accordance with the display data, the first pair being two voltages equal to a same one selected from among the Q different gray-scale voltages, the second pair being two different voltages selected from among the Q different gray-scale voltages, and plural amplifiers corresponding to the video lines, each of the amplifiers for outputting the video signal voltage to a corresponding one of the video lines based upon one of the first and second pairs of voltages or a voltage intermediate between the second pair of voltages and produced from the second pair of voltages in the amplifiers.
摘要:
A semiconductor integrated circuit includes a first register, a second register, a gray scale voltage generator which outputs a plurality of gray scale voltages, a decoder which selects a gray scale voltage, and an amplifier including a first transistor, a second transistor, a third transistor, and a fourth transistor. A first terminal of the first transistor and a first terminal of the second transistors are connected to a first voltage line, a first terminal of the third transistor and a first terminal of the fourth transistor are connected to a second voltage line, a second terminal of the first transistor is connected to a second terminal of the third transistor, and a second terminal of the second transistor is connected to a second terminal of the fourth transistor.