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    Semiconductor memory and method of setting type
    2.
    发明授权
    Semiconductor memory and method of setting type 失效
    半导体存储器和设置方法

    公开(公告)号：US5539692A

    公开(公告)日：1996-07-23

    申请号：US191411

    申请日：1994-02-03

    申请人： Kazuhiko Kajigaya ,  Masashi Horiguchi ,  Yoshinobu Nakagome ,  Ryoichi Hori ,  Tetsuro Matsumoto ,  Masaharu Kubo

    发明人： Kazuhiko Kajigaya ,  Masashi Horiguchi ,  Yoshinobu Nakagome ,  Ryoichi Hori ,  Tetsuro Matsumoto ,  Masaharu Kubo

    IPC分类号： G11C11/401 ,  G06F11/00 ,  G11C5/00 ,  G11C7/10 ,  G11C29/44 ,  H01L27/10 ,  G11C7/00

    CPC分类号： G11C29/44 ,  G06F11/006 ,  G11C7/1045

    摘要： A semiconductor chip is provided with a function selection circuit for selecting memory functions according to the information stored in nonvolatile memory elements is sealed in a package, and the memory functions are set finally by writing the nonvolatile memory element in that state or in a state in which the semiconductor chip is mounted on a board. By setting the type of a semiconductor memory according to the above procedure, the process from the wafer process up to the assembling step can be made common, and hence the mass-productibity and the production control can be facilitated. Semiconductor memories having memory functions conforming to user specifications can be provided in a short time.

    摘要翻译： 半导体芯片设置有用于根据存储在非易失性存储器元件中的信息来选择存储器功能的功能选择电路，该存储器功能被封装在封装中，并且最终通过将该非易失性存储元件写入该状态或以该状态 半导体芯片安装在板上。 通过根据上述步骤设置半导体存储器的类型，可以使从晶片处理到组装步骤的过程是共同的，因此可以促进大规模生产和生产控制。 可以在短时间内提供具有符合用户规格的记忆功能的半导体存储器。

    Solid-state imaging device
    3.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4360821A

    公开(公告)日：1982-11-23

    申请号：US66230

    申请日：1979-08-13

    申请人： Toshihisa Tsukada ,  Eiichi Maruyama ,  Toru Baji ,  Saburo Ataka ,  Yoshinori Imamura ,  Akira Sasano ,  Masaharu Kubo ,  Norio Koike ,  Shusaku Nagahara

    发明人： Toshihisa Tsukada ,  Eiichi Maruyama ,  Toru Baji ,  Saburo Ataka ,  Yoshinori Imamura ,  Akira Sasano ,  Masaharu Kubo ,  Norio Koike ,  Shusaku Nagahara

    IPC分类号： H01L27/146 ,  H01L27/14

    CPC分类号： H01L27/14665

    摘要： In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.

    摘要翻译： 在具有多个感光部分的固态成像装置和至少包括用于扫描感光部分的扫描装置的半导体衬底上，感光部分包括覆盖在半导体衬底上的感光材料层和覆盖着透明导电膜的透明导电膜 感光材料层; 一种固态成像装置，其特征在于感光材料是不可缺少的成分是硅并且含有氢的无定形材料。 感光材料的氢含量优选为5原子％至30原子％，特别是10原子％至25原子％。

    Solid-state imaging device
    4.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4335406A

    公开(公告)日：1982-06-15

    申请号：US163298

    申请日：1980-06-26

    申请人： Shinya Ohba ,  Masaharu Kubo ,  Iwao Takemoto ,  Shoji Hanamura ,  Masakazu Aoki

    发明人： Shinya Ohba ,  Masaharu Kubo ,  Iwao Takemoto ,  Shoji Hanamura ,  Masakazu Aoki

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/365 ,  H04N5/374 ,  H04N3/15

    CPC分类号： H04N5/2173

    摘要： This invention provides a signal processing circuit of a solid-state imaging device utilizing discontinuous scanning pulses having fixed interval times, and with a fixed pattern noise-eliminating circuit of high performance. In the signal processing circuit of this invention, switching elements are disposed in a feedback circuit of a signal amplifier (for example, pre-amplifier) and at an output of the signal amplifier, whereby the fixed pattern noise is suppressed so as to attain a high signal-to-noise ratio.

    摘要翻译： 本发明提供一种使用具有固定间隔时间的不连续扫描脉冲的固态成像装置的信号处理电路，以及具有高性能的固定图案噪声消除电路。 在本发明的信号处理电路中，开关元件设置在信号放大器（例如前置放大器）的反馈电路中，并在信号放大器的输出端设置，从而抑制固定图案噪声，从而达到 高信噪比。

    Solid-state imaging device
    5.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4323912A

    公开(公告)日：1982-04-06

    申请号：US152690

    申请日：1980-05-23

    申请人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

    发明人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H01L27/14

    CPC分类号： H01L27/14665

    摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.

    摘要翻译： 在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上， 设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域 相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

    Solid-state color imaging device
    7.
    发明授权
    Solid-state color imaging device 失效
    固态彩色成像装置

    公开(公告)号：US4242694A

    公开(公告)日：1980-12-30

    申请号：US832676

    申请日：1977-09-12

    申请人： Norio Koike ,  Masaharu Kubo

    发明人： Norio Koike ,  Masaharu Kubo

    IPC分类号： H04N9/07 ,  H01L27/108 ,  H01L27/148 ,  H04N1/04 ,  H01L27/14 ,  H01L29/78 ,  H01L31/00

    CPC分类号： H01L27/14843 ,  H01L27/108 ,  H01L27/14812

    摘要： A solid-state color imaging device contains semiconductive photoelectric elements for light of the respective primary colors, and means for sequentially transmitting charges as electric signals, the charges having been generated and stored according to the quantities of the corresponding primary color light beams received by the photoelectric elements. Transparent conductive films are provided through transparent insulating films on the light receiving sides of the photoelectric elements for at least two primary color light beams, and the charge storage capacitances of the respective photoelectric elements or the ratios of the quantities of light actually reaching photoelectric transduction portions to the entering quantities of the corresponding primary color light beam in the respective photoelectric elements are set at predetermined values.

    摘要翻译： 固体彩色成像装置包含用于各种原色光的半导体光电元件，以及用于依次将电荷作为电信号传输的装置，电荷根据由所述原色接收的相应原色光束的量而被生成和存储 光电元件。 透明导电膜通过用于至少两个原色光束的光电元件的光接收侧上的透明绝缘膜提供，并且各个光电元件的电荷存储电容或实际到达光电转换部分的光量比 将相应的光电元件中的相应原色光束的输入量设定为预定值。

    Charge transfer semiconductor device
    8.
    发明授权
    Charge transfer semiconductor device 失效
    电荷转移半导体器件

    公开(公告)号：US4177391A

    公开(公告)日：1979-12-04

    申请号：US649746

    申请日：1976-01-16

    申请人： Hideo Sunami ,  Masaharu Kubo ,  Iwao Takemoto

    发明人： Hideo Sunami ,  Masaharu Kubo ,  Iwao Takemoto

    IPC分类号： G11C19/28 ,  H01L27/105 ,  H01L29/78

    CPC分类号： H01L27/1057 ,  G11C19/287

    摘要： A charge transfer semiconductor device has the input signals of charge carriers divided successively; the successively divided input signals are transferred by more than two charge transfer semiconductor elements successively, and transferred input signals are successively combined and detected, whereby a high speed transferring operation of the input signals is accomplished.

    摘要翻译： 电荷转移半导体器件依次分配电荷载流子的输入信号; 连续分割的输入信号依次由两个以上的电荷转移半导体元件传送，并且传送的输入信号被连续地组合和检测，从而实现输入信号的高速传输操作。

    Photoelectric element in a solid-state image pick-up device
    9.
    发明授权
    Photoelectric element in a solid-state image pick-up device 失效
    光电元件在固态图像拾取器件中

    公开(公告)号：US4143389A

    公开(公告)日：1979-03-06

    申请号：US823646

    申请日：1977-08-11

    申请人： Norio Koike ,  Masaharu Kubo

    发明人： Norio Koike ,  Masaharu Kubo

    IPC分类号： H01L27/146 ,  H01L31/113 ,  H04N5/335 ,  H04N5/374 ,  H01L27/14

    CPC分类号： H01L31/1136 ,  H01L27/14643

    摘要： In a solid-state image pickup device having photoelectric elements each of which includes one or more switching MOS field-effect transistors and which are arrayed in one dimension or two dimensions on one semiconductor substrate, and scanning circuits which address the photoelectric devices time-sequentially, a transparent or semitransparent electrode is disposed over a light detecting region provided for the switching field-effect transistor, with an insulating oxide film intervening therebetween, whereby a capacitance is formed between the electrode and the substrate, charges generated under the electrode by photoexcitation are stored in a charge-storage region including the capacitance for a certain time, and the stored charges are taken out by the scanning circuits to a signal output line connecting the drains of the transistors in common.