公开(公告)号：US20060028100A1

公开(公告)日：2006-02-09

申请号：US11240524

申请日：2005-10-03

申请人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

发明人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

IPC分类号： H01L41/187

CPC分类号： B41J2/1628 ,  B41J2/161 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1646 ,  H01L41/0815 ,  H01L41/0973 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49401

摘要： A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.

公开(公告)号：US07053526B2

公开(公告)日：2006-05-30

申请号：US10071095

申请日：2002-02-11

申请人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

发明人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

IPC分类号： H01L41/08

CPC分类号： B41J2/1628 ,  B41J2/161 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1646 ,  H01L41/0815 ,  H01L41/0973 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49401

摘要： A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.

公开(公告)号：US06841490B2

公开(公告)日：2005-01-11

申请号：US10694053

申请日：2003-10-28

申请人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

发明人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

IPC分类号： B81C1/00 ,  C23C14/08 ,  H01L21/20 ,  H01L21/203 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/12 ,  H01L29/788 ,  H01L29/792 ,  H01L21/283 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/7624 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  Y10S438/90

摘要： A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

摘要翻译： 用于半导体器件的衬底包括晶体硅衬底; 其上的绝缘硅化合物层和绝缘硅化合物层上的结晶绝缘层，其中所述绝缘硅化合物层含有不超过构成所述结晶绝缘层的材料的组分元素的10at％，所述组分元素设置在 绝缘硅化合物层通过扩散。

公开(公告)号：US06653211B2

公开(公告)日：2003-11-25

申请号：US10068988

申请日：2002-02-11

申请人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

发明人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

IPC分类号： H01L2120

CPC分类号： H01L21/7624 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  Y10S438/90

摘要： A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

摘要翻译： 用于半导体器件的衬底包括晶体硅衬底; 其上的绝缘硅化合物层和绝缘硅化合物层上的结晶绝缘层，其中所述绝缘硅化合物层含有不超过构成所述结晶绝缘层的材料的组分元素的10at％，所述组分元素设置在 绝缘硅化合物层通过扩散。

公开(公告)号：US07069631B2

公开(公告)日：2006-07-04

申请号：US11240524

申请日：2005-10-03

申请人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

发明人： Akira Unno ,  Takao Yonehara ,  Tetsuro Fukui ,  Takanori Matsuda ,  Kiyotaka Wasa

IPC分类号： H01L17/00 ,  H01L21/00

CPC分类号： B41J2/1628 ,  B41J2/161 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1646 ,  H01L41/0815 ,  H01L41/0973 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49401

摘要： A piezoelectric structure includes a vibrational plate and a piezoelectric film. The vibrational plate includes a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials. Oxide layers sandwich the aforementioned layer. The piezoelectric film has a single orientation crystal or monocrystal structure.

摘要翻译： 压电结构包括振动板和压电膜。 振动板包括单晶材料层，多晶体材料，掺杂有与构成单晶材料的元素不同的元素的单晶材料，或掺杂有与构成多晶体的元素不同的元素的多晶材料 材料 氧化层夹着上述层。 压电薄膜具有单取向晶体或单晶结构。

公开(公告)号：US07618131B2

公开(公告)日：2009-11-17

申请号：US11515816

申请日：2006-09-06

申请人： Kiyotaka Wasa ,  Akira Unno ,  Tetsuro Fukui ,  Takanori Matsuda

发明人： Kiyotaka Wasa ,  Akira Unno ,  Tetsuro Fukui ,  Takanori Matsuda

IPC分类号： B41J2/045

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14258 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/316 ,  Y10T29/42 ,  Y10T29/49155

摘要： A piezoelectric element structure comprises a supporting substrate, and a piezoelectric film supported on the supporting substrate, in which the piezoelectric film contains a first layer, and a second layer having zirconium, each provided with perovskite structure, and formed to be in contact with each other or laminated through an intermediate layer, and the temperature is set at 500° C. or more at the time of thin film formation so as to provide the piezoelectric film, and a quick cooling is given from the thin film formation temperature at least to 450° C. with a cooling speed of 30° C./min or more for the formation thereof. The piezoelectric film thus formed is in a small thickness as compared with the conventional piezoelectric film, but presents a large piezoelectric constant, hence making it possible to perform efficient microprocessing thereof reliably.

公开(公告)号：US07120978B2

公开(公告)日：2006-10-17

申请号：US09880757

申请日：2001-06-15

申请人： Kiyotaka Wasa ,  Akira Unno ,  Tetsuro Fukui ,  Takanori Matsuda

发明人： Kiyotaka Wasa ,  Akira Unno ,  Tetsuro Fukui ,  Takanori Matsuda

IPC分类号： H04R17/00 ,  B05D5/12

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14258 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/316 ,  Y10T29/42 ,  Y10T29/49155

摘要： A method of manufacturing a piezoelectric element structure having a supporting substrate and a piezoelectric film supported on the supporting substrate. A first layer, and a second layer having zirconium, each provided with a perovskite structure, are formed in that order on the supporting substrate. The two layers are formed to be in contact with each other or laminated through an intermediate layer. The temperature is set to 500° C. or more at the time of formation of the layers, and cooling is subsequently provided from the formation temperature at least to 450° C. with a cooling speed of 30° C./min or more.

摘要翻译： 一种制造具有支撑基板和支撑在支撑基板上的压电膜的压电元件结构的方法。 在支撑基板上依次形成具有各自具有钙钛矿结构的第一层和具有锆的第二层。 两层形成为彼此接触或通过中间层层叠。 在层的形成时将温度设定为500℃以上，随后以30℃/分钟以上的冷却速度从形成温度至少450℃进行冷却。

公开(公告)号：US20070002103A1

公开(公告)日：2007-01-04

申请号：US11515816

申请日：2006-09-06

申请人： Kiyotaka Wasa ,  Akira Unno ,  Tetsuro Fukui ,  Takanori Matsuda

发明人： Kiyotaka Wasa ,  Akira Unno ,  Tetsuro Fukui ,  Takanori Matsuda

IPC分类号： B41J2/045

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14258 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/316 ,  Y10T29/42 ,  Y10T29/49155

摘要： A piezoelectric element structure comprises a supporting substrate, and a piezoelectric film supported on the supporting substrate, in which the piezoelectric film contains a first layer, and a second layer having zirconium, each provided with perovskite structure, and formed to be in contact with each other or laminated through an intermediate layer, and the temperature is set at 500° C. or more at the time of thin film formation so as to provide the piezoelectric film, and a quick cooling is given from the thin film formation temperature at least to 450° C. with a cooling speed of 30° C./min or more for the formation thereof. The piezoelectric film thus formed is in a small thickness as compared with the conventional piezo-electric film, but presents a large piezoelectric constant, hence making it possible to perform efficient microprocessing thereof reliably.

摘要翻译： 压电元件结构包括支撑基板和支撑在支撑基板上的压电膜，其中压电膜包含第一层，和具有锆的第二层，每个都具有钙钛矿结构，并形成为与每个 通过中间层进行其他层压，并且在薄膜形成时将温度设定为500℃以上，以提供压电膜，并且从薄膜形成温度至少至 450℃，冷却速度为30℃/分钟以上，形成。 与现有的压电薄膜相比，这样形成的压电薄膜的厚度小，但压电常数大，能够可靠地进行有效的微加工。

公开(公告)号：US20050219793A1

公开(公告)日：2005-10-06

申请号：US11062586

申请日：2005-02-23

申请人： Takanori Matsuda ,  Toshihiro Ifuku ,  Tetsuro Fukui ,  Kiyotaka Wasa

发明人： Takanori Matsuda ,  Toshihiro Ifuku ,  Tetsuro Fukui ,  Kiyotaka Wasa

IPC分类号： B41J2/045 ,  B41J2/01 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/145 ,  B41J2/16 ,  H01G4/06 ,  H01G4/10 ,  H01G4/12 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/316 ,  H01L41/39 ,  H02N2/00

CPC分类号： H01G4/1227 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14258 ,  H01G4/10 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319

摘要： A dielectric element in which a substrate, a lower electrode layer, a dielectric layer and an upper electrode layer are provided in this order, wherein the dielectric layer has a first dielectric layer of which major component is an oxide and provided on a side of said lower electrode layer, and a second dielectric layer of which major component is an oxide and provided on a side of said upper electrode layer, and the second dielectric layer is thicker than the first dielectric layer, and a formula (1) described below is satisfied when a dielectric constant of the first dielectric layer at 25° C. is ε1 and a dielectric constant of the second dielectric layer at 25° C. is ε2. ε1/ε2≧0.9  (1)

摘要翻译： 依次提供基板，下电极层，电介质层和上电极层的电介质元件，其中介电层具有主要成分为氧化物的第一电介质层，并设置在所述电介质层的一侧 下电极层和第二电介质层，其主要成分是氧化物，并且设置在所述上​​电极层的一侧，并且第二电介质层比第一电介质层厚，并且满足下述公式（1） 当第二电介质层在25℃下的介电常数为ε1，第二电介质层的介电常数在25℃时为ε2。 <？in-line-formula description =“In-line Formulas”end =“lead”？> epsilon1 / epsilon2 = 0.9（1）<？in-line-formula description =“In-line Formulas”end =“tail “？>

公开(公告)号：US07453188B2

公开(公告)日：2008-11-18

申请号：US11062586

申请日：2005-02-23

申请人： Takanori Matsuda ,  Toshihiro Ifuku ,  Tetsuro Fukui ,  Kiyotaka Wasa

发明人： Takanori Matsuda ,  Toshihiro Ifuku ,  Tetsuro Fukui ,  Kiyotaka Wasa

IPC分类号： H01L41/08

CPC分类号： H01G4/1227 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14258 ,  H01G4/10 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319

摘要： A dielectric element includes a lower electrode layer provided on a substrate, a dielectric layer provided on the lower electrode layer and an upper electrode layer provided on the dielectric layer. The dielectric layer has a first dielectric layer provided on a side of the lower electrode layer, and a second dielectric layer provided on a side of the upper electrode layer. The second dielectric layer is a layer comprised mainly of an oxide including four or more kinds of metal element components, and the first dielectric layer does not substantially include at least one component selected from metal elements included in the oxide layer of the second dielectric layer and is comprised mainly of an oxide including at least three components selected from the remaining metal elements without substantially including Ti and Zr elements.

摘要翻译： 电介质元件包括设置在基板上的下电极层，设置在下电极层上的电介质层和设置在电介质层上的上电极层。 电介质层具有设置在下电极层一侧的第一电介质层和设置在上电极层一侧的第二电介质层。 第二电介质层是主要由包括四种或更多种金属元素组分的氧化物组成的层，并且第一介电层基本上不包括选自包含在第二介电层的氧化物层中的金属元素中的至少一种成分， 主要由包括至少三种选自剩余金属元素的组分的氧化物组成，而基本不包括Ti和Zr元素。