公开(公告)号：US5334250A

公开(公告)日：1994-08-02

申请号：US22742

申请日：1993-02-17

申请人： Akiyoshi Mikami ,  Takashi Ogura ,  Kousuke Terada ,  Masaru Yoshida ,  Takuo Yamashita ,  Koichi Tanaka ,  Katsushi Okibayashi ,  Shigeo Nakajima ,  Hiroaki Nakaya ,  Kouji Taniguchi

发明人： Akiyoshi Mikami ,  Takashi Ogura ,  Kousuke Terada ,  Masaru Yoshida ,  Takuo Yamashita ,  Koichi Tanaka ,  Katsushi Okibayashi ,  Shigeo Nakajima ,  Hiroaki Nakaya ,  Kouji Taniguchi

IPC分类号： H05B33/10 ,  C23C16/44 ,  C23C16/455 ,  C30B25/08 ,  H01L21/205

CPC分类号： C23C16/455 ,  C23C16/45591

摘要： A vapor deposition apparatus for depositing thin film on substrates in which solid starting materials are used. In this apparatus, a carrier gas flows up and down in the same direction as gas convection, such that the effect of gas convection is minimized and film thickness and impurity concentration are uniform over the substrate surface. This uniformity is achieved by orienting a main reaction tube in a vertical direction, attaching two branch reaction tubes at the top of the main reaction tube, and venting carrier gas out the bottom of the main reaction tube. Alternately, the main reaction tube can be oriented horizontally, with the substrates being carried on a holder within a container having pores on its top and bottom.

摘要翻译： 一种用于在其中使用固体起始材料的基底上沉积薄膜的气相沉积设备。 在该装置中，载流气体沿与气体对流相同的方向上下流动，使得气体对流的作用最小化，并且膜厚度和杂质浓度在基板表面上是均匀的。 通过使主反应管在垂直方向取向，在主反应管的顶部安装两个分支反应管，并将载气从主反应管的底部排出，实现均匀性。 或者，主反应管可以水平取向，衬底被承载在具有其顶部和底部上的孔的容器内的保持器上。

公开(公告)号：US5223305A

公开(公告)日：1993-06-29

申请号：US698797

申请日：1991-05-13

申请人： Koichi Tanaka ,  Kousuke Terada ,  Katsushi Okibayashi ,  Akiyoshi Mikami ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Koichi Tanaka ,  Kousuke Terada ,  Katsushi Okibayashi ,  Akiyoshi Mikami ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： H05B33/10 ,  C23C16/18 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/46 ,  H01L21/205

CPC分类号： C23C16/46 ,  C23C16/455

摘要： An apparatus for vapor deposition including a vapor deposition section to which at least one semiconductor material supply passage and at least one alkoxide material supply passage are connected, first heating means provided for the vapor deposition section and capable of maintaining the temperature thereof higher than that of the alkoxide supply passage, second heating means provided for the semiconductor material supply passage and capable of maintaining the temperature thereof higher than that of the vapor deposition section, and third heating means provided for the alkoxide material supply passage and capable of maintaining the temperature thereof constant, and a process for continuously forming a multilayered film on a substrate.

摘要翻译： 一种用于气相沉积的装置，包括连接至少一个半导体材料供应通道和至少一个醇盐材料供应通道的气相沉积部分，为蒸镀部设置的第一加热装置，并且能够将其温度保持在高于 所述醇盐供给路径，为半导体材料供给路设置的第二加热单元，其温度保持为高于蒸镀部的温度;以及第三加热单元，设置在所述醇盐材料供给路径上，能够保持其温度恒定 ，以及在基板上连续形成多层膜的工序。

公开(公告)号：US5185181A

公开(公告)日：1993-02-09

申请号：US721711

申请日：1991-06-26

申请人： Akiyoshi Mikami ,  Kousuke Terada ,  Katsushi Okibayashi ,  Koichi Tanaka ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Akiyoshi Mikami ,  Kousuke Terada ,  Katsushi Okibayashi ,  Koichi Tanaka ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： H05B33/10 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  H05B33/12 ,  H05B33/14

CPC分类号： C23C16/45591 ,  C23C16/306 ,  C23C16/455

摘要： A process is provided for preparing uniform and homogeneous thin films such as ZnS:M film on the substrates having a large area by CVD under a reduced pressure, wherein as many plural substrates as possible can be subjected to the CVD treatment in the same apparatus without decreasing a growth rate of the film. Accordingly, EL displays having a large area which possess a high quality and can be manufactured efficiently.

摘要翻译： 提供了一种通过CVD在减压下在具有大面积的基板上制备均匀且均匀的薄膜如ZnS：M膜的方法，其中尽可能多的多个基板可以在相同的装置中进行CVD处理而没有 降低电影的增长率。 因此，EL显示器具有高质量的大面积并且可以有效地制造。

公开(公告)号：US5147683A

公开(公告)日：1992-09-15

申请号：US638841

申请日：1991-01-08

申请人： Koichi Tanaka ,  Akiyoshi Mikami ,  Kouji Taniguchi ,  Katsushi Okibayashi ,  Kousuke Terada ,  Takuo Yamashita ,  Takashi Ogura ,  Hiroaki Nakaya ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Koichi Tanaka ,  Akiyoshi Mikami ,  Kouji Taniguchi ,  Katsushi Okibayashi ,  Kousuke Terada ,  Takuo Yamashita ,  Takashi Ogura ,  Hiroaki Nakaya ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： H05B33/10 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/365 ,  H05B33/12 ,  H05B33/14

CPC分类号： C23C16/45502 ,  C23C16/306 ,  C23C16/45512 ,  C23C16/45559 ,  C23C16/45582 ,  C23C16/458

摘要： Disclosed is an improvement of the chemical vapor deposition (CVD) process for preparing an electroluminescent device having a large area and a large size. The process includes forming a luminescent layer on a substrate by a reduced-pressure chemical vapor deposition method wherein a source material gas is introduced into a reaction chamber. The reaction chamber includes a screening means which screens the source material gas flow in the chamber to form a first area in which the gas is flowing and a second area in which the gas substantially does not flow. The screening means has apertures for connecting the first area and second area. the substrate is placed in the second area, to which the source material is supplied by means of gas diffusion.

公开(公告)号：US5116640A

公开(公告)日：1992-05-26

申请号：US594139

申请日：1990-10-10

申请人： Akiyoshi Mikami ,  Takashi Ogura ,  Kousuke Terada ,  Masaru Yoshida ,  Takuo Yamashita ,  Koichi Tanaka ,  Katsushi Okibayashi ,  Shigeo Nakajima ,  Hiroaki Nakaya ,  Kouji Taniguchi

发明人： Akiyoshi Mikami ,  Takashi Ogura ,  Kousuke Terada ,  Masaru Yoshida ,  Takuo Yamashita ,  Koichi Tanaka ,  Katsushi Okibayashi ,  Shigeo Nakajima ,  Hiroaki Nakaya ,  Kouji Taniguchi

IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/54 ,  H01L21/205 ,  H05B33/10

CPC分类号： H05B33/10 ,  C23C16/306 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54

摘要： A process for preparing an electroluminescent device includes the steps of forming an insulating layer and a luminescent layer on a substrate, wherein the insulating and luminescent layers are respectively formed at different forming areas in the same deposition chamber.

摘要翻译： 制备电致发光器件的方法包括在衬底上形成绝缘层和发光层的步骤，其中绝缘层和发光层分别形成在同一淀积室中的不同形成区域。

公开(公告)号：US5087531A

公开(公告)日：1992-02-11

申请号：US442634

申请日：1989-11-29

申请人： Kousuke Terada ,  Akiyoshi Mikami ,  Kouji Taniguchi ,  Koichi Tanaka ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Kousuke Terada ,  Akiyoshi Mikami ,  Kouji Taniguchi ,  Koichi Tanaka ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： C09K11/57 ,  C09K11/88 ,  H05B33/10 ,  H05B33/14

CPC分类号： H05B33/14 ,  C09K11/574 ,  C09K11/883 ,  H05B33/10 ,  Y10S428/917

摘要： Disclosed is an electroluminescent device including a substrate and an electroluminescent film on the substrate wherein the electroluminescent film is composed of a II-VI group compound semiconductor matrix and an electroluminescent center element; the improvement being present in that the electroluminescent film has a crystal structure of a hexagonal system, and contains the electroluminescent center element in a concentration (Ci) of 0.5 to 4 at. % within a thickness of 0.2 micrometer from the side of the substrate and in a concentration (Cr) of 0.15 to 0.7 at. % at the residual portion, and Ci is larger than Cr, and the process for preparing the same.

摘要翻译： 公开了一种电致发光器件，其在衬底上包括衬底和电致发光膜，其中电致发光膜由II-VI族化合物半导体衬底和电致发光中心元件构成; 存在的改进在于电致发光膜具有六方晶系的晶体结构，并且含有浓度（Ci）为0.5-4atm的电致发光中心元件。 的厚度为0.2微米，并且浓度（Cr）为0.15〜0.7at。 ％，并且C 1大于Cr，以及其制备方法。

公开(公告)号：US5356657A

公开(公告)日：1994-10-18

申请号：US779235

申请日：1991-10-18

申请人： Kousuke Terada ,  Akiyoshi Mikami ,  Kouji Taniguchi ,  Koichi Tanaka ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Kousuke Terada ,  Akiyoshi Mikami ,  Kouji Taniguchi ,  Koichi Tanaka ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： C09K11/57 ,  C09K11/88 ,  H05B33/10 ,  H05B33/14 ,  H01J9/12

CPC分类号： H05B33/14 ,  C09K11/574 ,  C09K11/883 ,  H05B33/10 ,  Y10S428/917

摘要： Disclosed is an electroluminescent device including a substrate and an electroluminescent film on the substrate wherein the electroluminescent film is composed of a II-VI group compound semiconductor matrix and an electroluminescent center element; the improvement being present in that the electroluminescent film has a crystal structure of a hexagonal system, and contains the electroluminescent center element in a concentration (Ci) of 0.5 to 4 at. % within a thickness of 0.2 micrometer from the side of the substrate and in a concentration (Cr) of 0.15 to 0.7 at. % at the residual portion, and Ci is larger than Cr, and the process for preparing the same.

摘要翻译： 公开了一种电致发光器件，其在衬底上包括衬底和电致发光膜，其中电致发光膜由II-VI族化合物半导体衬底和电致发光中心元件构成; 存在的改进在于电致发光膜具有六方晶系的晶体结构，并且含有浓度（Ci）为0.5-4atm的电致发光中心元件。 的厚度为0.2微米，并且浓度（Cr）为0.15〜0.7at。 ％，并且C 1大于Cr，以及其制备方法。

公开(公告)号：US5096735A

公开(公告)日：1992-03-17

申请号：US656427

申请日：1991-02-05

申请人： Hiroaki Nakaya ,  Takuo Yamashita ,  Takashi Ogura ,  Kouji Tanaguchi ,  Koichi Tanaka ,  Akiyoshi Mikami ,  Katsushi Okibayashi ,  Kousuke Terada

发明人： Hiroaki Nakaya ,  Takuo Yamashita ,  Takashi Ogura ,  Kouji Tanaguchi ,  Koichi Tanaka ,  Akiyoshi Mikami ,  Katsushi Okibayashi ,  Kousuke Terada

IPC分类号： H01L33/00 ,  H05B33/10

CPC分类号： H01L33/0087 ,  H05B33/10

摘要： Disclosed is an improvement of a process for producing a thin film electroluminescent device wherein the luminescent film is formed by a CVD method. The improvement residues in that an unnecessary portion of the luminescent layer, which is inherently formed if the CVD method is employed, is removed by etching.

摘要翻译： 披露了通过CVD法形成发光膜的薄膜电致发光器件的制造方法的改进。 如果使用CVD法固有地形成的发光层的不需要部分的改进残留物通过蚀刻被去除。

公开(公告)号：US5156924A

公开(公告)日：1992-10-20

申请号：US759205

申请日：1991-09-11

申请人： Kouji Taniguchi ,  Koichi Tanaka ,  Kousuke Terada ,  Akiyoshi Mikami ,  Masaru Yoshida

发明人： Kouji Taniguchi ,  Koichi Tanaka ,  Kousuke Terada ,  Akiyoshi Mikami ,  Masaru Yoshida

IPC分类号： H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22

CPC分类号： H05B33/22 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  Y10S428/917

摘要： A multi-color electroluminescent panel comprising common electrodes and a plurality of transparent electrodes, an EL light emitting layer disposed between the common and transparent electrodes and capable of exhibiting a hysteresis in light emission luminance versus applied voltage characteristic, and band-pass color filters provided on the EL light emitting layer for passing therethrough light of a particular color emitted from the EL light emitting layer.

摘要翻译： 一种包括公共电极和多个透明电极的多色电致发光面板，设置在公共电极和透明电极之间并且能够在发光亮度与施加电压特性方面呈现滞后性的EL发光层和提供的带通滤色器 在EL发光层上通过从EL发光层发射的特定颜色的光。

公开(公告)号：US5346776A

公开(公告)日：1994-09-13

申请号：US853938

申请日：1992-03-19

申请人： Kouji Taniguchi ,  Koichi Tanaka ,  Kousuke Terada ,  Akiyoshi Mikami ,  Masaru Yoshida

发明人： Kouji Taniguchi ,  Koichi Tanaka ,  Kousuke Terada ,  Akiyoshi Mikami ,  Masaru Yoshida

IPC分类号： H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22

CPC分类号： H05B33/22 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  Y10S428/917

摘要： A multi-color electroluminescent panel comprising common electrodes and a plurality of transparent electrodes, an EL light emitting layer disposed between the common and transparent electrodes and capable of exhibiting a hysteresis in light emission luminance versus applied voltage characteristic, and band-pass color filters provided on the EL light emitting layer for passing therethrough light of a particular color emitted from the EL light emitting layer.

摘要翻译： 一种包括公共电极和多个透明电极的多色电致发光面板，设置在公共电极和透明电极之间并且能够在发光亮度与施加电压特性方面呈现滞后性的EL发光层和提供的带通滤色器 在EL发光层上通过从EL发光层发射的特定颜色的光。