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公开(公告)号：US20170141536A1
公开(公告)日：2017-05-18
申请号：US15416434
申请日：2017-01-26
CPC分类号： H01S5/068 , H01S3/0014 , H01S3/0637 , H01S3/0675 , H01S3/10015 , H01S3/10023 , H01S3/1003 , H01S3/1055 , H01S3/1305 , H01S5/021 , H01S5/02453 , H01S5/026 , H01S5/0265 , H01S5/0612 , H01S5/1028 , H01S5/1209 , H01S5/142
摘要： In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions and silicon optical components, such as silicon wavelength filters and stabilized wavelength references, thereby reducing the size and manufacturing complexity of tunable lasing devices.
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公开(公告)号：US09692207B2
公开(公告)日：2017-06-27
申请号：US13249753
申请日：2011-09-30
IPC分类号： H01S3/10 , H01S5/00 , H01S3/083 , H01S5/14 , H01S5/02 , H01S5/10 , H01S3/13 , H01S5/024 , H01S5/026
CPC分类号： H01S5/068 , H01S3/0014 , H01S3/0637 , H01S3/0675 , H01S3/10015 , H01S3/10023 , H01S3/1003 , H01S3/1055 , H01S3/1305 , H01S5/021 , H01S5/02453 , H01S5/026 , H01S5/0265 , H01S5/0612 , H01S5/1028 , H01S5/1209 , H01S5/142
摘要： In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions and silicon optical components, such as silicon wavelength filters and silicon wavelength references, thereby reducing the size and manufacturing complexity of tunable lasing devices. For example, embodiments of the invention may utilize hybridized III-V/silicon gain regions with ring filters on silicon form a tunable laser with efficient gain from the III-V region, while providing wide tunability, efficient tunability, and narrow linewidth due to the nature of the silicon rings.
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公开(公告)号：US20140254978A1
公开(公告)日：2014-09-11
申请号：US13789440
申请日：2013-03-07
申请人： Brian Koch , Erik Norberg , Alexander W. Fang , Jae Shin , Gregory Alan Fish
发明人： Brian Koch , Erik Norberg , Alexander W. Fang , Jae Shin , Gregory Alan Fish
IPC分类号： H01L21/822 , G02B6/13
CPC分类号： G02B6/13 , G02B6/12 , G02B6/12004 , G02F1/0018 , G02F2001/212 , H01L21/822
摘要： Embodiments of the invention describe photonic integrated circuits (PICs) formed using simultaneous fabrication operations performed on photonic device layers. Each device of a PIC may be made from different optimized materials by growing the materials separately, cutting pieces of the different materials and bonding these pieces to a shared wafer. Embodiments of the invention bond photonic device layers so that shared (i.e., common) processing operations may be utilized to make more than one device simultaneously. Embodiments of the invention allow for simpler, more cost effective fabrication of PICs and improve photonic device performance and reliability.
摘要翻译： 本发明的实施例描述了使用在光子器件层上执行的同时制造操作形成的光子集成电路（PIC）。 PIC的每个装置可以通过分别生长材料而不同的优化材料制成，切割不同材料的片并将这些片粘合到共享的晶片上。 本发明的实施例将光子器件层结合起来，使得可以利用共享的（即共同的）处理操作来同时制造多个器件。 本发明的实施例允许PIC的更简单，更经济有效的制造并且提高光子器件的性能和可靠性。
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公开(公告)号：US08774582B1
公开(公告)日：2014-07-08
申请号：US13461634
申请日：2012-05-01
CPC分类号： H01S5/22 , G02F1/025 , G02F2201/07 , G02F2202/102 , G02F2202/105 , H01L21/187 , H01S5/3213 , H01S5/3214
摘要： “Hybrid photonic devices” describe devices wherein the optical portion—i.e., the optical mode, comprises both the silicon and III-V semiconductor regions, and thus the refractive index of the semiconductor materials and the refractive index of the bonding layer region directly effects the optical function of the device. Prior art devices utilize an optically compliant layer that is the same material as the III-V substrate; however, during the final sub-process of the bonding process, the substrates must be removed by acids. These acids can etch into the bonding layer, causing imperfections to propagate at the interface of the bonded material, adversely affecting the optical mode shape and propagation loss of the device.Embodiments of the invention utilize a semiconductor etch-selective bonding layer that is not affected by the final stages of the bonding process (e.g., substrate removal), and thus protects the bonding interface layer from being affected.
摘要翻译： “混合光子器件”描述了其中光学部分即光学模式包括硅和III-V半导体区域的器件，因此半导体材料的折射率和结合层区域的折射率直接影响 光学功能的设备。 现有技术的装置利用与III-V衬底相同材料的光学柔顺层; 然而，在接合过程的最后一个子过程中，基底必须被酸去除。 这些酸可以蚀刻到结合层中，导致缺陷在接合材料的界面处传播，不利地影响器件的光学模式形状和传播损耗。 本发明的实施例利用不受接合工艺的最后阶段（例如，衬底移除）的影响的半导体蚀刻选择性接合层，并且因此保护接合界面层免受影响。
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公开(公告)号：US08559478B2
公开(公告)日：2013-10-15
申请号：US12355628
申请日：2009-01-16
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/026 , H01S5/06256 , H01S5/1014 , H01S5/1032 , H01S5/1209 , H01S5/3414
摘要： Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.
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6.发明申请公开(公告)号：US20090245298A1
公开(公告)日：2009-10-01
申请号：US12355628
申请日：2009-01-16
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/026 , H01S5/06256 , H01S5/1014 , H01S5/1032 , H01S5/1209 , H01S5/3414
摘要： Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.
摘要翻译： 公开了硅上的光子集成电路。 通过将作为有源区的化合物半导体材料的晶片结合到硅并去除衬底，可以使用硅衬底上的标准光刻技术来处理激光器，放大器，调制器和其它器件。 根据本发明的一个或多个实施例的硅激光器混合集成器件包括绝缘体上硅衬底，其包括顶表面中的至少一个波导，以及包括增益层的化合物半导体衬底，化合物半导体衬底 进行量子阱混合处理，其中化合物半导体衬底的上表面结合到绝缘体上硅衬底的顶表面上。
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公开(公告)号：US20130195137A1
公开(公告)日：2013-08-01
申请号：US13838932
申请日：2013-03-15
申请人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
发明人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
CPC分类号： H01S5/30 , G02B2006/12121 , H01S5/021 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/1032 , H01S5/125 , H01S5/141 , H01S5/2214 , H01S5/223 , H01S5/34
摘要： Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.
摘要翻译： 一种方法的实施方案包括用设置在硅中的光波导引导光学模式，与光波导和有源半导体材料重叠，该有源半导体材料通过光波导引导而光学耦合到光波导，将活性半导体材料电泵送到 注入引导通过有源半导体材料并通过光学模式的电流，并响应于注入的电流产生有源半导体材料中的光。 公开和要求保护其他实施例。
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8.发明申请ACID BLOCK FOR HYBRID SILICON DEVICE PROCESSING COMPATIBLE WITH LOW-LOSS WAVEGUIDES 有权混合硅装置处理与低损耗波形相容的块公开(公告)号：US20100166360A1
公开(公告)日：2010-07-01
申请号：US12346779
申请日：2008-12-30
申请人： Richard Jones , Alexander W. Fang
发明人： Richard Jones , Alexander W. Fang
摘要： An acid-stop structure for a rib waveguide comprises a fin structure formed between the sidewalls in each rib channel of the rib waveguide, thereby preventing acids and other etchants from flowing down the rib channel and under a die that has been bonded to a wafer.
摘要翻译： 用于肋波导的止酸结构包括形成在肋波导管的每个肋通道中的侧壁之间的翅片结构，从而防止酸和其它蚀刻剂沿着肋通道向下流动并且已经结合到晶片的模具下方。
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公开(公告)号：US08380033B1
公开(公告)日：2013-02-19
申请号：US13450328
申请日：2012-04-18
IPC分类号： G02B6/10
CPC分类号： H01S5/021 , H01S5/0218 , H01S5/22 , H01S5/3095 , H01S5/3211 , H01S2301/176
摘要： Embodiments of the invention relate to an electro-optic device comprising a first region of silicon semiconductor material and a second region of III-V semiconductor material. A waveguide of the optical device is formed in part by a ridge in the second region. An optical mode of the waveguide is laterally confined by the ridge of the second region and vertically confined by a vertical boundary included in the first region. The ridge structure further serves as a current confinement structure over the active region of the electro-optic device, eliminating the need for implantation or other structures that are known to present reliability problems during manufacturing. The lack of “voids” and implants in electro-optic devices according to embodiments of the invention leads to better device reliability, process repeatability and improved mechanical strength.
摘要翻译： 本发明的实施例涉及包括硅半导体材料的第一区域和III-V半导体材料的第二区域的电光器件。 光学器件的波导部分地由第二区域中的脊形成。 波导的光学模式由第二区域的脊横向限制，并且由包括在第一区域中的垂直边界垂直限制。 脊结构还用作电光器件的有源区域上的电流限制结构，消除了在制造期间已知可能出现可靠性问题的植入或其他结构的需要。 在根据本发明的实施例的电光装置中缺少空隙和植入物导致更好的装置可靠性，工艺重复性和改进的机械强度。
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10.发明授权Acid block for hybrid silicon device processing compatible with low-loss waveguides 有权用于与低损耗波导兼容的混合硅器件处理的酸性块公开(公告)号：US08150228B2
公开(公告)日：2012-04-03
申请号：US12346779
申请日：2008-12-30
申请人： Richard Jones , Alexander W. Fang
发明人： Richard Jones , Alexander W. Fang
摘要： An acid-stop structure for a rib waveguide comprises a fin structure formed between the sidewalls in each rib channel of the rib waveguide, thereby preventing acids and other etchants from flowing down the rib channel and under a die that has been bonded to a wafer.
摘要翻译： 用于肋波导的止酸结构包括形成在肋波导管的每个肋通道中的侧壁之间的翅片结构，从而防止酸和其它蚀刻剂沿着肋通道向下流动并且已经结合到晶片的模具下方。
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