摘要:
A method of integrating benzocyclobutene (BCB) layers with a substrate is provided along with a corresponding device. A method includes forming a first BCB layer on the substrate and depositing a first metal layer on the first BCB layer and within vias defined by the first metal layer. The method also forms a second BCB layer on the first metal layer and deposits a second metal layer on the second BCB layer and within vias defined by the second metal layer. The second metal layer extends through the vias defined by the second metal layer to establish an operable connection with the first metal layer. The first and second metal layers are independent of an electrical connection to any circuit element carried by the substrate, but the first and second metal layers secure the second BCB layer to the underlying structure and reduce the likelihood of delamination.
摘要:
A method and apparatus for mounting microelectronic chips to a thermal heat sink. The chips are arranged in a desired configuration with their active faces all facing a common direction and with their active faces defining a common planar surface for all of said chips. A metallic material is applied to the chip, preferably by electroplating to backsides of the chips, the metallic material being electro-formed thereon and making void-free contact with the backsides of the chips.
摘要:
A method of integrating benzocyclobutene (BCB) layers with a substrate is provided along with a corresponding device. A method includes forming a first BCB layer on the substrate and depositing a first metal layer on the first BCB layer and within vias defined by the first metal layer. The method also forms a second BCB layer on the first metal layer and deposits a second metal layer on the second BCB layer and within vias defined by the second metal layer. The second metal layer extends through the vias defined by the second metal layer to establish an operable connection with the first metal layer. The first and second metal layers are independent of an electrical connection to any circuit element carried by the substrate, but the first and second metal layers secure the second BCB layer to the underlying structure and reduce the likelihood of delamination.
摘要:
Apparatus and methods are provided for heat removal and spreading from a field effect transistor (FET) including a substrate, a first source, a first gate, and a drain on the substrate, and a poly-diamond dielectric thermally coupled to the first gate wherein the poly-diamond dielectric facilitates heat removal from a top of the FET.