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11 条记录 (耗时 0.031 秒)

    Feedback control of dimensions in nanopore and nanofluidic devices
    7.
    发明授权
    Feedback control of dimensions in nanopore and nanofluidic devices 有权
    纳米孔和纳米流体装置尺寸反馈控制

    公开(公告)号：US09422154B2

    公开(公告)日：2016-08-23

    申请号：US13021544

    申请日：2011-02-04

    申请人： Stefan Harrer ,  Stephen M. Rossnagel ,  Philip S. Waggoner

    发明人： Stefan Harrer ,  Stephen M. Rossnagel ,  Philip S. Waggoner

    IPC分类号： B81C1/00

    CPC分类号： C25D11/022 ,  B81C1/00071 ,  B81C2201/0114 ,  C25D7/04 ,  C25D11/26 ,  C25D11/34

    摘要： Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements.

    摘要翻译： 纳米流体通道如纳米通道和纳米孔通过使用反馈系统以受控的方式封闭或打开。 在存在电解液的情况下，在通道内生长或除去氧化物层，直到通道达到所选尺寸或闭合。 在制造过程中测量纳米流体通道的尺寸变化。 通过通道的离子电流水平可用于确定通道尺寸。 通过流体元件阵列的流体流动可以通过元件之间的流体通道的选择性氧化来控制。

    FEEDBACK CONTROL OF DIMENSIONS IN NANOPORE AND NANOFLUIDIC DEVICES
    8.
    发明申请
    FEEDBACK CONTROL OF DIMENSIONS IN NANOPORE AND NANOFLUIDIC DEVICES 有权
    纳米和纳米级器件尺寸反馈控制

    公开(公告)号：US20120103821A1

    公开(公告)日：2012-05-03

    申请号：US13021544

    申请日：2011-02-04

    申请人： Stefan Harrer ,  Stephen M. Rossnagel ,  Philip S. Waggoner

    发明人： Stefan Harrer ,  Stephen M. Rossnagel ,  Philip S. Waggoner

    IPC分类号： C25D21/12 ,  C25F3/02 ,  C25D5/00

    CPC分类号： C25D11/022 ,  B81C1/00071 ,  B81C2201/0114 ,  C25D7/04 ,  C25D11/26 ,  C25D11/34

    摘要： Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements.

    摘要翻译： 纳米流体通道如纳米通道和纳米孔通过使用反馈系统以受控的方式封闭或打开。 在存在电解液的情况下，在通道内生长或除去氧化物层，直到通道达到所选尺寸或闭合。 在制造过程中测量纳米流体通道的尺寸变化。 通过通道的离子电流水平可用于确定通道尺寸。 通过流体元件阵列的流体流动可以通过元件之间的流体通道的选择性氧化来控制。

    Nanofluidic biochemical sensors based on surface charge modulated ion current
    9.
    发明申请
    Nanofluidic biochemical sensors based on surface charge modulated ion current 审中-公开
    基于表面电荷调制离子电流的纳米流体生化传感器

    公开(公告)号：US20130040313A1

    公开(公告)日：2013-02-14

    申请号：US13206588

    申请日：2011-08-10

    申请人： Ali Afzali-Ardakani ,  Philip S. Waggoner

    发明人： Ali Afzali-Ardakani ,  Philip S. Waggoner

    IPC分类号： G01N33/543 ,  G01N30/96 ,  C12M1/34

    CPC分类号： G01N33/48721 ,  B01L3/502746 ,  B01L3/502761 ,  B01L2300/0867

    摘要： Biological and chemical sensors based on surface charge changes in a pore or channel, such as a nanopore or nanochannel, are employed to detect targeted analytes in an electrolyte solution having a low ion concentration. Receptors within the pore or channel capture a targeted analyte, causing a change in surface charge that affects ionic conductance. The change in ionic conductance is detected, evidencing the presence of the targeted analyte. A secondary tag may be introduced to the pore or channel for binding with a captured analyte in certain circumstances for causing a change in the surface charge.

    摘要翻译： 使用基于孔或通道（如纳米孔或纳米通道）中的表面电荷变化的生物和化学传感器来检测具有低离子浓度的电解质溶液中的目标分析物。 孔或通道内的受体捕获目标分析物，导致影响离​​子电导的表面电荷的变化。 检测离子电导的变化，证明目标分析物的存在。 在某些情况下，可以将二级标签引入孔或通道中与捕获的分析物结合以引起表面电荷的改变。

    Collapsable gate for deposited nanostructures
    10.
    发明授权
    Collapsable gate for deposited nanostructures 失效
    用于沉积的纳米结构的可折叠门

    公开(公告)号：US08492748B2

    公开(公告)日：2013-07-23

    申请号：US13169542

    申请日：2011-06-27

    申请人： Josephine B. Chang ,  Paul Chang ,  Michael A. Guillorn ,  Philip S. Waggoner

    发明人： Josephine B. Chang ,  Paul Chang ,  Michael A. Guillorn ,  Philip S. Waggoner

    IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L29/15 ,  H01L51/40

    CPC分类号： H01L29/66045 ,  H01L51/055

    摘要： A disposable material layer is first deposited on a graphene layer or a carbon nanotube (CNT). The disposable material layer includes a material that is less inert than graphene or CNT so that a contiguous dielectric material layer can be deposited at a target dielectric thickness without pinholes therein. A gate stack is formed by patterning the contiguous dielectric material layer and a gate conductor layer deposited thereupon. The disposable material layer shields and protects the graphene layer or the CNT during formation of the gate stack. The disposable material layer is then removed by a selective etch, releasing a free-standing gate structure. The free-standing gate structure is collapsed onto the graphene layer or the CNT below at the end of the selective etch so that the bottom surface of the contiguous dielectric material layer contacts an upper surface of the graphene layer or the CNT.

    摘要翻译： 一次性材料层首先沉积在石墨烯层或碳纳米管（CNT）上。 一次性材料层包括比石墨烯或CNT更不惰性的材料，使得可以以目标电介质厚度沉积连续的电介质材料层而没有针孔。 通过图案化连续的介电材料层和沉积在其上的栅极导体层来形成栅极叠层。 一次性材料层在形成栅极叠层期间屏蔽并保护石墨烯层或CNT。 然后通过选择性蚀刻去除一次性材料层，释放独立的栅极结构。 独立栅极结构在选择性蚀刻结束时在石墨烯层或CNT上折叠，使得连续介电材料层的底表面接触石墨烯层或CNT的上表面。