公开(公告)号：US20070173071A1

公开(公告)日：2007-07-26

申请号：US11336726

申请日：2006-01-20

申请人： Ali Afzali-Ardakani ,  Stephen Gates ,  Alfred Grill ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel

发明人： Ali Afzali-Ardakani ,  Stephen Gates ,  Alfred Grill ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel

IPC分类号： H01L21/469 ,  H01L23/58

CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided. The porous composite material is fabricating utilizing at least one bifunctional organic porogen as a precursor compound

摘要翻译： 可用于半导体器件制造的多孔复合材料，其中孔的直径（或特征尺寸）和孔径分布（PSD）以纳米级方式进行控制，并且其表现出改进的内聚强度（或等效地提高的断裂韧性或 降低脆性），并且提供了诸如应力腐蚀开裂，Cu进入和其它关键性能等性能的降低的耐水分性。 多孔复合材料是利用至少一种双功能有机致孔剂作为前体化合物制造的

公开(公告)号：US20050245096A1

公开(公告)日：2005-11-03

申请号：US10838849

申请日：2004-05-03

申请人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

发明人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

IPC分类号： C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

摘要翻译： 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：US20070196639A1

公开(公告)日：2007-08-23

申请号：US11190360

申请日：2005-07-27

申请人： Stephen Gates ,  Alfred Grill ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel

发明人： Stephen Gates ,  Alfred Grill ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel

IPC分类号： B32B3/00

CPC分类号： H01B19/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/249967 ,  Y10T428/24997 ,  Y10T428/249978 ,  Y10T428/249979 ,  H01L2924/00

摘要： The present invention provides a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD. The inventive composite material is also characterized by the substantial absence of the broad distribution of larger sized pores which is prevalent in prior art porous composite materials. The porous composite material includes a first solid phase having a first characteristic dimension and a second solid phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less.

摘要翻译： 本发明提供一种多孔复合材料，其中复合材料中的基本上所有的孔都具有小直径约5nm或更小并具有窄PSD的孔。 本发明的复合材料的特征还在于现有技术的多孔复合材料中普遍存在的较大尺寸的孔的基本上不存在。 多孔复合材料包括具有第一特征尺寸的第一固相和由具有第二特征尺寸的孔组成的第二固相，其中至少一个所述相的特征尺寸被控制为约5nm或更小的值 。

公开(公告)号：US20060165891A1

公开(公告)日：2006-07-27

申请号：US11132108

申请日：2005-05-18

申请人： Daniel Edelstein ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

发明人： Daniel Edelstein ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

IPC分类号： C23C16/00 ,  B05D3/00

CPC分类号： H01L31/103 ,  Y10T428/31663

摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C≡CH2, C≡C or a [S]n linkage, where n is a defined above.

摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k介电材料，其包括Si，C，O和H的原子，其中C原子的一部分键合为Si-CH _{3个官能团，另外一部分C原子键合为Si-R-Si，其中R是苯基， - [CH 2 N] - 其中n大于或等于1，HC-CH，C≡CH2，C≡C或[S] n N连接，其中n是定义的 以上。}

公开(公告)号：US20080044668A1

公开(公告)日：2008-02-21

申请号：US11034479

申请日：2005-01-13

申请人： Christos Dimitrakopoulos ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Eric Liniger ,  Xiao Liu ,  Son Nguyen ,  Deborah Neumayer ,  Thomas Shaw

发明人： Christos Dimitrakopoulos ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Eric Liniger ,  Xiao Liu ,  Son Nguyen ,  Deborah Neumayer ,  Thomas Shaw

IPC分类号： B32B9/04 ,  B32B13/04

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/249953 ,  Y10T428/249969 ,  Y10T428/249979

摘要： A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

摘要翻译： 描述了形成具有受控双轴应力的超低介电常数层的方法，其包括以下步骤：通过PECVD和旋涂方法之一形成包含Si，C，O和H的层，并在含有非常低的浓度的环境中固化该膜 的氧和水各自小于10ppm。 还通过使用介电常数不大于2.8的方法描述材料。 本发明克服了低双轴应力低于46MPa的薄膜形成问题。

公开(公告)号：US20070161256A1

公开(公告)日：2007-07-12

申请号：US11329560

申请日：2006-01-11

申请人： Stephen Gates ,  Alfred Grill ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

发明人： Stephen Gates ,  Alfred Grill ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

IPC分类号： H01L21/31

CPC分类号： H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

摘要： A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

摘要翻译： 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。

公开(公告)号：US20060110937A1

公开(公告)日：2006-05-25

申请号：US11324479

申请日：2006-01-03

申请人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Newmayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

发明人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Newmayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

IPC分类号： H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

公开(公告)号：US20060079099A1

公开(公告)日：2006-04-13

申请号：US10964254

申请日：2004-10-13

申请人： Son Nguyen ,  Stephen Gates ,  Deborah Neumayer ,  Alfred Grill

发明人： Son Nguyen ,  Stephen Gates ,  Deborah Neumayer ,  Alfred Grill

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/31695 ,  Y10T428/249921

摘要： A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.

摘要翻译： 提供了由具有内置有机致孔剂的单一有机硅前体制备包含Si，C，O和H原子的SiCOH电介质材料的方法。 具有内置有机致孔剂的单一有机硅前体选自具有分子式SiRR 1 R 2 R 2的硅烷（SiH 4 S 4）衍生物 3，具有分子式R 4的二硅氧烷衍生物R 5 S 6 -Si-O-Si-R 具有分子式R 10 R 11的三硅氧烷衍生物，其中R 1，R 2，R 3，R 3，R 4， SUP> R 12 -Si-O-Si-R 13 R 14 -O-Si-R 15 其中R和R 1-17可以相同也可以不相同，并且选自H，烷基，烷氧基，环氧基， 苯基，乙烯基，烯丙基，烯基或炔基，其可以是直链，支链，环状，多环并且可以被含氧，含氮或含氟的取代基官能化。 除了该方法之外，本申请还提供了由本发明方法制备的SiCOH电介质以及含有该SiCOH的电子结构。

公开(公告)号：US20050194619A1

公开(公告)日：2005-09-08

申请号：US11040778

申请日：2005-01-21

申请人： Daniel Edelstein ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

发明人： Daniel Edelstein ,  Stephen Gates ,  Alfred Grill ,  Michael Lane ,  Robert Miller ,  Deborah Neumayer ,  Son Nguyen

IPC分类号： H01L27/148 ,  H01L31/103

CPC分类号： H01L31/103 ,  Y10T428/31663

摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C═C or a [S]n linkage, where n is a defined above.

摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k介电材料，其包括Si，C，O和H的原子，其中C原子的一部分键合为Si-CH _{3个官能团，另外一部分C原子键合为Si-R-Si，其中R是苯基， - [CH 2 N] - 其中n大于或等于1，HC-CH，C-CH 2，CC或[S] N n连接，其中n定义如上。}

公开(公告)号：US20070237970A1

公开(公告)日：2007-10-11

申请号：US11763829

申请日：2007-06-15

申请人： Stephan Cohen ,  Stephen Gates ,  Alfred Grill ,  Vishnubhai Patel

发明人： Stephan Cohen ,  Stephen Gates ,  Alfred Grill ,  Vishnubhai Patel

IPC分类号： C23C16/00 ,  B32B9/04

CPC分类号： H01L21/02167 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/12535 ,  Y10T428/24917 ,  Y10T428/249953 ,  H01L2924/00

摘要： A diffusion barrier useful in semiconductor electronic devices, such as multi-level interconnect wiring structures, is provided. The diffusion barrier is characterized as having a low-dielectric constant of less than 3.5, preferably less than 3.0, as well as being capable of substantially preventing Cu and/or oxygen from diffusing into the active device areas of the electronic device. Since the diffusion barrier has a low-dielectric constant, the diffusion barrier has only a minor effect on the effective dielectric constant of the interconnect structure. The low-k diffusion battier includes atoms of Si, C, H and N. The N atoms are non-uniformly distributed within the low-k diffusion barrier. Optionally, the low-k diffusion barrier may include atoms of Ge, O, halogens such as F or any combination thereof.

摘要翻译： 提供了可用于诸如多层互连布线结构的半导体电子器件中的扩散屏障。 扩散阻挡层的特征在于具有小于3.5，优选小于3.0的低介电常数，并且能够基本上防止Cu和/或氧扩散到电子器件的有源器件区域。 由于扩散阻挡层具有低介电常数，所以扩散阻挡层对互连结构的有效介电常数只有较小的影响。 低k扩散阻挡层包括Si，C，H和N的原子.N原子在低k扩散势垒内不均匀分布。 任选地，低k扩散阻挡层可以包括Ge，O的原子，诸如F的卤素或其任何组合。