公开(公告)号：US20080044960A1

公开(公告)日：2008-02-21

申请号：US11901969

申请日：2007-09-18

申请人： Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01L21/84

CPC分类号： H01J37/321 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/78618

摘要： A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.

摘要翻译： 通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积 然后可以加热以将掺杂剂驱动到晶体管中。 一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

公开(公告)号：US20070032082A1

公开(公告)日：2007-02-08

申请号：US11199592

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/302

CPC分类号： H01L21/0332 ,  G03F1/54 ,  G03F1/68 ,  G03F7/202 ,  H01L21/3081 ,  H01L21/3086

摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.

摘要翻译： 一种使用光学可写掩模在半导体衬底上处理薄膜结构的方法，所述方法包括将衬底放置在反应室中，所述衬底在其表面上具有根据预定的暴露于光源的靶层 （a）将含碳工艺气体引入所述室中，（b）在可折入路径中产生可重入环形的RF等离子体电流，所述折返路径包括位于所述腔内的过程区域 通过将等离子体RF源功率耦合到可折入路径的外部部分，（c）将RF等离子体偏置功率或偏置电压耦合到工件。 该方法还包括根据预定图案，用适合于转换光学可写掩膜层的透明度或不透明度的特性的光进行光学写入，并通过掩模层曝光目标层与读取光 具有与书写光不同的特征。

公开(公告)号：US20050230047A1

公开(公告)日：2005-10-20

申请号：US11046659

申请日：2005-01-28

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC分类号： H01J37/32 ,  C23F1/00 ,  H01L21/302

CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma reactor for performing plasma immersion ion implantation, dopant deposition or surface material enhancement, includes a vacuum chamber, a wafer support pedestal or electrostatic chuck having an insulated electrode underlying a wafer support surface within said chamber, a chucking voltage source coupled to the insulated electrode, a thermal sink coupled to the electrostatic chuck, an RF bias power generator coupled to said electrostatic chuck, and a process gas supply and gas inlet ports coupled to the chamber and coupled to the gas supply. The process gas supply contains either (a) a gas containing a dopant species to be ion implanted in a semiconductive material of workpiece, (b) a gas containing a dopant species to be deposited on a surface of a semiconductive material of a workpiece, or (c) a gas containing a material enhancement species to be ion implanted into a workpiece.

摘要翻译： 用于执行等离子体浸没离子注入，掺杂剂沉积或表面材料增强的等离子体反应器包括真空室，晶片支撑基座或静电卡盘，其具有位于所述腔室内的晶片支撑表面下方的绝缘电极，耦合到绝缘体的夹持电压源 电极，耦合到静电卡盘的散热器，耦合到所述静电卡盘的RF偏置功率发生器，以及耦合到所述腔室并耦合到气体供应的工艺气体供应和气体入口端口。 工艺气体供应包含（a）含有要离子注入工件半导体材料中的掺杂剂物质的气体，（b）含有待沉积在工件的半导体材料表面上的掺杂物质的气体，或 （c）含有将离子注入到工件中的材料增强物质的气体。

公开(公告)号：US20050191830A1

公开(公告)日：2005-09-01

申请号：US11046661

申请日：2005-01-28

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC分类号： H01J37/32 ,  H01L21/425

CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

摘要： A method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber, includes placing the workpiece on a workpiece support in the chamber, controlling a temperature of the wafer support near a constant level; performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma while minimizing deposition and minimizing etching by holding the temperature of the workpiece within a temperature range that is above a workpiece deposition threshold temperature and below a workpiece etch threshold temperature.

摘要翻译： 在等离子体反应器室中对工件进行等离子体浸没离子注入的方法包括将工件放置在腔室中的工件支撑件上，将晶片支架的温度控制在恒定水平附近; 通过将注入种类前体气体引入到腔室中并产生等离子体并且通过将工件的温度保持在高于工件沉积阈值温度并低于工件沉积阈值温度的温度范围内来最小化沉积和最小化蚀刻来对工件进行等离子体浸没离子注入 工件蚀刻阈值温度。

公开(公告)号：US20050191827A1

公开(公告)日：2005-09-01

申请号：US11046562

申请日：2005-01-28

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC分类号： H01J37/32 ,  H01L21/461 ,  H01L21/302

CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01L21/67109 ,  H01L21/6831

摘要： One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma, and then removing the workpiece from the chamber and removing the seasoning film from the chamber interior surfaces.

摘要翻译： 在等离子体反应器室中的工件上进行等离子体浸没离子注入的一种方法包括：在工件被引入之前，首先在等离子体反应器室的内表面上沉积调味膜，通过将调味膜前体气体引入室中， 在室内的等离子体，通过将注入种类前体气体引入到腔室中并产生等离子体，然后从腔室中移出工件并从室内表面除去调味膜，从而在工件上进行等离子体浸没离子注入。

公开(公告)号：US20070212811A1

公开(公告)日：2007-09-13

申请号：US11788523

申请日：2007-04-19

申请人： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth Collins ,  Amir Al-Bayati ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01L21/16

CPC分类号： H01L21/02274 ,  C23C14/48 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32357 ,  H01J37/32412 ,  H01J2237/2001 ,  H01L21/02126 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/6659 ,  Y10T29/5313

摘要： Device-enhancing coatings are deposited on CMOS devices by successively masking with photoresist each one of the sets of N-channel and P-channel devices while unmasking or leaving unmasked the other set, and after each step of successively masking one of the sets of devices, carrying out low temperature CVD steps with a toroidal RF plasma current while applying an RF plasma bias voltage. The temperature of the workpiece is held below a threshold photoresist removal temperature. The RF bias voltage is held at a level at which the coating is deposited with a first stress when the unmasked set consists of the P-channel devices and with a second stress when the unmasked set consists of N-channel devices.

摘要翻译： 通过在每个N沟道和P沟道器件组中的每一个上对光阻单元进行连续掩蔽，同时在CMOS器件上沉积器件增强涂层，同时对另一个器件进行掩蔽或者脱离另一个器件，并且在每个步骤连续地掩蔽器件组中的一个器件 在施加RF等离子体偏压的同时，用环形RF等离子体电流进行低温CVD步骤。 工件的温度保持在阈值光刻胶去除温度以下。 当未屏蔽组由P沟道器件组成并且当未屏蔽组由N沟道器件组成时，RF偏置电压保持在第一应力下沉积涂层的水平。

公开(公告)号：US20070032095A1

公开(公告)日：2007-02-08

申请号：US11199572

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/00

CPC分类号： B23K26/0738 ,  B23K26/0608 ,  B23K26/0876 ,  B23K26/361 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76886

摘要： A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.

摘要翻译： 在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层 比例开口，包括垂直侧壁，在第一阻挡层上沉积包括阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。 该方法还包括通过以下步骤来退火主导体层：（a）将来自连续波激光器阵列的光引导到至少部分穿过薄膜结构的光线，以及（b）相对于薄的平面 薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。 沉积无定形碳光吸收层的步骤包括将含碳工艺气体引入反应器的反应器室中，该反应器室在反应器的工艺区域中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过工艺区域并向衬底施加偏置电压。

公开(公告)号：US20070032054A1

公开(公告)日：2007-02-08

申请号：US11199593

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/26

CPC分类号： H01L21/0276 ,  C23C16/26 ,  C23C16/507 ,  H01J37/321 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/268 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S430/151

摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

摘要翻译： 使用光学可写掩模在半导体衬底上处理薄膜结构的方法包括将衬底放置在反应室中，所述衬底在其表面上根据预定图案在其表面上具有待蚀刻的靶层，并且沉积碳 - （a）将含碳工艺气体引入所述腔室中，（b）在折入路径中产生可重入环形的RF等离子体电流，所述凹入的RF等离子体电流包括通过耦合等离子体RF源功率的工件区域 到（c）将RF等离子体偏置功率或偏置电压耦合到工件的外部部分。 该方法还包括光刻地限定含碳硬掩模层中的预定图案，并且在存在硬掩模层的情况下蚀刻目标层。

公开(公告)号：US20060088655A1

公开(公告)日：2006-04-27

申请号：US10971772

申请日：2004-10-23

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Amir Al-Bayati ,  Andrew Nguyen ,  Biagio Gallo

IPC分类号： C23C14/00 ,  C23C16/52

CPC分类号： H01J37/321 ,  C23C14/48 ,  C23C14/54 ,  H01J37/32412 ,  H01J37/32935

摘要： A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.

摘要翻译： 在将所选择的物质离子注入工件期间测量等离子体浸入式离子注入反应器中的离子剂量的方法包括将工件放置在反应器中的基座上，并将反应器中的工件气体进料到反应器中， 然后将RF等离子体源功率耦合到反应器中的等离子体。 它还包括通过RF偏置功率发生器将RF偏置功率耦合到工件，该RF偏置功率发生器通过电抗器的偏置馈电点耦合到工件，并且在馈电点处测量RF电流以产生电流相关值， 随着时间的推移产生离子注入剂量相关值。

公开(公告)号：US20060073683A1

公开(公告)日：2006-04-06

申请号：US11284975

申请日：2005-11-21

申请人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

发明人： Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Monroy

IPC分类号： H01L21/04

CPC分类号： H01J37/32357 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32412 ,  H01L21/2236

摘要： A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.

摘要翻译： 将工件中的物质离子注入到选定的离子注入轮廓深度的方法包括将具有半导体材料的工件放置在等离子体反应器室的处理区域中或其附近的静电卡盘上，并向静电卡盘施加夹持电压。 所述方法还包括将包括要离子植入的物质的前体气体引入所述室中并将RF偏压施加到所述静电卡盘，所述RF偏压具有对应于所述离子注入轮廓深度的偏置电平。